Claims
- 1. A substrate-cleaning solution used for cleaning of a substrate which has a metal material and a semiconductor material both exposed on the surface, which cleaning solution contains (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material and (b) an anionic or cationic surfactant.
- 2. A substrate-cleaning solution used for cleaning of a substrate which has a metal material and a semiconductor material exposed on the surface and which has been subjected to a chemical mechanical polishing treatment with a polishing solution, which cleaning solution contains (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material, (b) an anionic or cationic surfactant, and (c) a second complexing agent capable of easily forming a complex with the metal impurities remaining on the surface of the substrate subjected to the chemical mechanical polishing treatment.
- 3. A substrate-cleaning solution according to claim 2, wherein the second complexing agent is a polyaminocarboxylic acid or an ammonium salt thereof.
- 4. A substrate-cleaning solution according to claim 3, wherein the polyaminocarboxylic acid is ethylenediaminetetraacetic acid (EDTA), trans-1,2-cyclohexanediaminetetraacetic acid (CyDTA), nitrilotriacetic acid (NTA), diethylenetriaminepentaacetic acid (DTPA), N-(2-hydroxyethyl)ethylenediamine-N,N′,N′-triacetic acid (EDTA-OH), or a salt thereof.
- 5. A substrate-cleaning solution according to claim 2, wherein the content of the second completing agent is 1 to 10000 ppm relative to the substrate-cleaning solution.
- 6. A substrate-cleaning solution according to claim 1, wherein the first complexing agent is a carboxylic acid or a salt thereof.
- 7. A substrate-cleaning solution according to claim 2, wherein the first completing agent is a carboxylic acid or a salt thereof.
- 8. A substrate-cleaning solution according to claim 1, wherein the first complexing agent is oxalic acid, citric acid, malic acid, maleic acid, succinic acid, tartaric acid, malonic acid, or a salt thereof.
- 9. A substrate-cleaning solution according to claim 2, wherein the first complexing agent is oxalic acid, citric acid, malic acid, maleic acid, succinic acid, tartaric acid, malonic acid, or a salt thereof.
- 10. A substrate-cleaning solution according to claim 1, wherein the surfactant is an ammonium salt of sulfuric ester or a primary, secondary or tertiary amine salt of sulfuric ester.
- 11. A substrate-cleaning solution according to claim 2, wherein the surfactant is an ammonium salt of sulfuric ester or a primary, secondary or tertiary amine salt of sulfuric ester.
- 12. A substrate-cleaning solution according to claim 1, wherein the surfactant is C12H25O(CH2CH2O)2SO3H, C9H19PhO(CH2CH2O)4SO3H, C12H25O(CH2CH2O)4SO3H, or an ammonium salt or primary, secondary or tertiary amine salt thereof.
- 13. A substrate-cleaning solution according to claim 2, wherein the surfactant is C12H25O(CH2CH2O)2SO3H, C9H19PhO(CH2CH2O)4SO3H, C12H25O(CH2CH2O)4SO3H, or an ammonium salt or primary, secondary or tertiary amine salt thereof.
- 14. A substrate-cleaning solution according to claim 1, wherein the surfactant is C8H17N(CH3)3Br or C12H25N(C2H5)(CH3)2Br.
- 15. A substrate-cleaning solution according to claim 2, wherein the surfactant is C8H17N(CH3)3Br or C12H25N(C2H5)(CH3)2Br.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-252661 |
Sep 1998 |
JP |
|
Parent Case Info
This application is a division of copending application Ser. No. 09/388,485, filed Sep. 2, 1999.
US Referenced Citations (11)
Foreign Referenced Citations (10)
Number |
Date |
Country |
1168194 |
Dec 1997 |
CN |
0 665 582 |
Aug 1995 |
EP |
0 690 483 |
Jan 1996 |
EP |
0 718 873 |
Jun 1996 |
EP |
0 742 282 |
Nov 1996 |
EP |
0 789 071 |
Aug 1997 |
EP |
0 805 484 |
Nov 1997 |
EP |
0 812 011 |
Dec 1997 |
EP |
5-259140 |
Oct 1993 |
JP |
85 104724 |
Apr 1996 |
TW |