Claims
- 1. A substrate for manufacturing single crystal thin films, characterized in that said substrate is a replica pattern of a single crystal cleavage plane, said replica pattern comprising a plurality of recesses in said substrate, said recesses having four faces which form an inverted quadrangular pyrmidal surface having a sharp apex and a height of about 1 .mu.m, each of said faces having (111) plane symmetry of a cubic lattice, said replica pattern being prepared by pressing a first thermosetting resin in a softened state against the single crystal cleavage plane to form a first substrate of said first resin having, as a replica pattern of said single crystal cleavage plane, a first surface of (111) plane symmetry of a cubic lattice, hardening said first substrate, pressing a second thermosetting resin in a softened state against said first surface of said hardened first substrate to form a second substrate of said second resin having a second surface of the same configuration as said single crystal cleavage plane, hardening said second substrate, attaching a third material selected from the group consisting of ceramic, graphite and glass in a softened state against said second surface of said hardened second substrate to form a third substrate of said third material having, as a replica pattern of said second surface, a third surface of (111) plane symmetry of a cubic lattice, and hardening said third substrate.
- 2. A substrate as claimed in claim 1, which is fixed to the outside surface of a cylindrical drum.
Priority Claims (1)
Number |
Date |
Country |
Kind |
57-202298 |
Nov 1982 |
JPX |
|
Parent Case Info
This application is a division of Ser. No. 543,452 filed Oct. 18, 1983, now abandoned.
US Referenced Citations (9)
Foreign Referenced Citations (1)
Number |
Date |
Country |
48-34069 |
Oct 1973 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Distler et al, "Growth of Single Crystals Through Interfacial Layers", Journal of Crystal Growth, vol. 26, 1974, No. 1, pp. 21-26. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
543452 |
Oct 1983 |
|