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C30B25/04

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

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C30B25/04Pattern deposit

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Patents Grantslast 30 patents

Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterned diamond and method of making same
- Patent number 12,167,781
- Issue date Dec 17, 2024
- CAPSOUL DIAMOND LTD.
- Nirit Damri
- A44 - HABERDASHERY JEWELLERY
Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming large area single crystal diamond substrates wi...
- Patent number 12,098,475
- Issue date Sep 24, 2024
- Board of Trustees of Michigan State University
- Timothy A. Grotjohn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III-nitride structures and manufacturing methods thereof
- Patent number 12,095,002
- Issue date Sep 17, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large area group III nitride crystals and substrates, methods of ma...
- Patent number 12,091,771
- Issue date Sep 17, 2024
- SLT TECHNOLOGIES, INC.
- Drew W. Cardwell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing semiconductor element, semiconductor elemen...
- Patent number 12,065,760
- Issue date Aug 20, 2024
- Kyocera Corporation
- Masahiro Araki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large area group III nitride crystals and substrates, methods of ma...
- Patent number 12,000,063
- Issue date Jun 4, 2024
- SLT TECHNOLOGIES, INC.
- Drew W. Cardwell
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Forming optical components using selective area epitaxy
- Patent number 11,988,868
- Issue date May 21, 2024
- Xerox Corporation
- Thomas Wunderer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate, method for manufacturing nitride s...
- Patent number 11,970,784
- Issue date Apr 30, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-grain near-field transducer and process for forming same
- Patent number 11,935,567
- Issue date Mar 19, 2024
- Seagate Technology LLC
- Michael Christopher Kautzky
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermophotovoltaic cells with integrated air-bridge for improved ef...
- Patent number 11,901,473
- Issue date Feb 13, 2024
- The Regents of the University of Michigan
- Tobias Burger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device having a planar III-N semiconductor layer and...
- Patent number 11,862,459
- Issue date Jan 2, 2024
- HEXAGEM AB
- Jonas Ohlsson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing deposition mask, intermediate product to wh...
- Patent number 11,814,719
- Issue date Nov 14, 2023
- Dai Nippon Printing Co., Ltd.
- Chikao Ikenaga
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Synthetic diamond material
- Patent number 11,807,955
- Issue date Nov 7, 2023
- Element Six Technologies Limited
- Matthew Lee Markham
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a metastable crystalline structure which is a 2-...
- Patent number 11,756,788
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Philipp Staudinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline film containing a crystalline metal oxide and method fo...
- Patent number 11,694,894
- Issue date Jul 4, 2023
- FLOSFIA INC.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for improved III/V nano-ridge fabrication on silicon
- Patent number 11,655,558
- Issue date May 23, 2023
- Imec VZW
- Bernardette Kunert
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,603,603
- Issue date Mar 14, 2023
- United States of Americas as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,535,951
- Issue date Dec 27, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized Heteropitaxial growth of semiconductors
- Patent number 11,434,583
- Issue date Sep 6, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Processing for forming single-grain near-field transducer
- Patent number 11,423,928
- Issue date Aug 23, 2022
- Seagate Technology LLC
- Michael Christopher Kautzky
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20250046656
- Publication date Feb 6, 2025
- Socpra Sciences et Genie s.e.c.
- Thierno Mamoudou DIALLO
- C30 - CRYSTAL GROWTH
Information Patent Application
SELECTIVE DEPOSITION OF DIAMOND
- Publication number 20240318349
- Publication date Sep 26, 2024
- M7D Corporation
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
DEFECT REDUCTION IN DIAMOND
- Publication number 20240318350
- Publication date Sep 26, 2024
- M7D Corporation
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY
- Publication number 20240255698
- Publication date Aug 1, 2024
- Xerox Corporation
- Thomas Wunderer
- C30 - CRYSTAL GROWTH
Information Patent Application
INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE
- Publication number 20240234544
- Publication date Jul 11, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
- Publication number 20240234141
- Publication date Jul 11, 2024
- KYOCERA CORPORATION
- Katsuaki MASAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APP...
- Publication number 20240191391
- Publication date Jun 13, 2024
- KYOCERA CORPORATION
- Toshihiro KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-GRAIN NEAR-FIELD TRANSDUCER AND PROCESS FOR FORMING SAME
- Publication number 20240185882
- Publication date Jun 6, 2024
- SEAGATE TECHNOLOGY LLC
- Michael Christopher Kautzky
- C30 - CRYSTAL GROWTH
Information Patent Application
ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OB...
- Publication number 20240158953
- Publication date May 16, 2024
- KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY
- Dae-Woo JEON
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON...
- Publication number 20240141549
- Publication date May 2, 2024
- Peking University
- Xinqiang WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
TEMPLATE SUBSTRATE, METHOD AND APPARATUS FOR MANUFACTURING TEMPLATE...
- Publication number 20240145622
- Publication date May 2, 2024
- KYOCERA CORPORATION
- Takeshi KAMIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
- Publication number 20240136181
- Publication date Apr 25, 2024
- KYOCERA CORPORATION
- Katsuaki MASAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PREPARATION METHOD FOR GROWING GERMANIUM SULFIDE (GeS2) SINGLE-CRYS...
- Publication number 20240120431
- Publication date Apr 11, 2024
- SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Guoqiang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FARBRICATION METHOD
- Publication number 20240107897
- Publication date Mar 28, 2024
- Microsoft Technology Licensing, LLC
- Pavel ASEEV
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
- Publication number 20240072198
- Publication date Feb 29, 2024
- KYOCERA CORPORATION
- Takeshi KAMIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240071761
- Publication date Feb 29, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- C30 - CRYSTAL GROWTH
Information Patent Application
WAVELENGTH DIVISION MULTIPLEXING RECEIVER
- Publication number 20240019722
- Publication date Jan 18, 2024
- Nokia Solutions and Networks Oy
- Joan Manel RAMIREZ
- C30 - CRYSTAL GROWTH
Information Patent Application
TEMPLATE FOR GROWING A CRYSTAL OF A TWO-DIMENSIONAL MATERIAL
- Publication number 20240018686
- Publication date Jan 18, 2024
- IMEC vzw
- Yuanyuan Shi
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Exfoliation Method
- Publication number 20240006243
- Publication date Jan 4, 2024
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20230420251
- Publication date Dec 28, 2023
- Samsung Electronics Co., Ltd.
- Kyungwook HWANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT E...
- Publication number 20230402564
- Publication date Dec 14, 2023
- The Regents of the University of California
- Srinivas Grandrothula
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DEPOSITING A SILICON GERMANIUM LAYER ON A SUBSTRATE
- Publication number 20230326750
- Publication date Oct 12, 2023
- Siltronic AG
- Lucas Becker
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUSPENSION PLASMA SPRAY COLUMNAR GROWTH CONTROL METHODS AND ARTICLE...
- Publication number 20230313409
- Publication date Oct 5, 2023
- Raytheon Technologies Corporation
- Sergei F. Burlatsky
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LAMINATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFA...
- Publication number 20230245883
- Publication date Aug 3, 2023
- Shin-Etsu Chemical Co., Ltd.
- Hiroshi HASHIGAMI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING SHADOW WALLS FOR FABRICATING PATTERNED STRUCTURES
- Publication number 20230227996
- Publication date Jul 20, 2023
- Microsoft Technology Licensing, LLC
- Jason Petros Heinrich JUNG
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20230089919
- Publication date Mar 23, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III-NITRIDE STRUCTURES AND MANUFACTURING METHODS THEREOF
- Publication number 20230073455
- Publication date Mar 9, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- C30 - CRYSTAL GROWTH
Information Patent Application
Laser Activated Luminescence System
- Publication number 20230062860
- Publication date Mar 2, 2023
- Board of Trustees of Michigan State University
- Marcos DANTUS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230045019
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042736
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH

Pattern deposit

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Preparation method for semiconductor structure

Patterned diamond and method of making same

Crystal growth method and a substrate for a semiconductor device

Optimized heteroepitaxial growth of semiconductors

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Optimized heteroepitaxial growth of semiconductors

Methods for forming large area single crystal diamond substrates wi...

Group-III-nitride structures and manufacturing methods thereof

Large area group III nitride crystals and substrates, methods of ma...

Method of manufacturing semiconductor element, semiconductor elemen...

Large area group III nitride crystals and substrates, methods of ma...

Forming optical components using selective area epitaxy

Nitride semiconductor substrate, method for manufacturing nitride s...

Single-grain near-field transducer and process for forming same

Thermophotovoltaic cells with integrated air-bridge for improved ef...

Semiconductor device having a planar III-N semiconductor layer and...

Method of manufacturing deposition mask, intermediate product to wh...

Synthetic diamond material

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Method for growing a metastable crystalline structure which is a 2-...

Crystalline film containing a crystalline metal oxide and method fo...

Methods for improved III/V nano-ridge fabrication on silicon

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized Heteropitaxial growth of semiconductors

Processing for forming single-grain near-field transducer

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

SELECTIVE DEPOSITION OF DIAMOND

DEFECT REDUCTION IN DIAMOND

FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY

INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE

SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APP...

SINGLE-GRAIN NEAR-FIELD TRANSDUCER AND PROCESS FOR FORMING SAME

ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OB...

PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON...

TEMPLATE SUBSTRATE, METHOD AND APPARATUS FOR MANUFACTURING TEMPLATE...

SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...

PREPARATION METHOD FOR GROWING GERMANIUM SULFIDE (GeS2) SINGLE-CRYS...

FARBRICATION METHOD

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE

SEMICONDUTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

WAVELENGTH DIVISION MULTIPLEXING RECEIVER

TEMPLATE FOR GROWING A CRYSTAL OF A TWO-DIMENSIONAL MATERIAL

Semiconductor Exfoliation Method

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT E...

METHOD FOR DEPOSITING A SILICON GERMANIUM LAYER ON A SUBSTRATE

SUSPENSION PLASMA SPRAY COLUMNAR GROWTH CONTROL METHODS AND ARTICLE...

SEMICONDUCTOR LAMINATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFA...

METHOD OF FORMING SHADOW WALLS FOR FABRICATING PATTERNED STRUCTURES

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

GROUP-III-NITRIDE STRUCTURES AND MANUFACTURING METHODS THEREOF

Laser Activated Luminescence System

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors