The exemplary embodiments generally relate to automated processing systems, and more particularly, to automated processing system diagnostics.
Automated processing systems such as semiconductor processing systems include multiple components that support the implementation of processes that effect predetermined levels of quality and reproducibility in semiconductor chip manufacturing. Examples of the multiple components include wafer handlers (e.g., robotic manipulators), wafer handler motion controllers, wafer presence sensors, slot valves, load locks, process modules, transfer modules, tool safety controllers, and tool host controllers. Typically these multiple components are employed in an automated processing system as separate modules and operate in a respective domain, where the tool host controller (and sometimes the wafer handler controller) is in communication with one or more other components of the multiple components for sending commands for wafer transport and/or processing.
The foregoing aspects and other features of the disclosed embodiment are explained in the following description, taken in connection with the accompanying drawings, wherein:
Each of the substrate processing systems 410, 11090, 2099, 3000, 3000A, 3000B, 3000C has a frame 410F, 1190F, 2099F, 3000F, 3000AF, 3000BF, 3000CF that forms a substrate transport space within the respective substrate processing system 410, 11090, 2099, 3000, 3000A, 3000B, 3000C. A substrate transport apparatus or wafer or substrate handler 11013, 11014, 2080, 26B, 26i, 3023, 3033, 550 is operably coupled to the frame 410F, 1190F, 2099F, 3000F, 3000AF, 3000BF, 3000CF. The substrate transport apparatus 11013, 11014, 2080, 26B, 26i, 3023, 3033, 550 has a movable articulated arm 214-218 (referred to herein as an arm) and drive section 299 configured to move the arm 214-218 and transport a wafer or substrate S (the terms wafer and substrate are used interchangeably herein but it is noted that the substrate may be any suitable workpiece), held on an end effector EE of the arm 214-218, through the transport space from a first position (e.g., any of the substrate holding locations described herein) of the substrate processing system 410, 11090, 2099, 3000, 3000A, 3000B, 3000C to a second position (e.g., any of the substrate holding locations described herein) of the substrate processing system 410, 11090, 2099, 3000, 3000A, 3000B, 3000C different than the first position. The arm drive section may be a rotary drive section having one or more drive shafts driven by a suitable motor (see
The substrate processing systems 410, 11090, 2099, 3000, 3000A, 3000B, 3000C are configured with a respective sensing system that effects an intelligent symbiotic and adaptive relationship between at least wafer handler controls and various other components of the substrate processing systems 410, 11090, 2099, 3000, 3000A, 3000B, 3000C. Unlike with the conventional automated processing systems described above, the aspects of the disclosed embodiment provide for the sharing of information between respective domains of the various components 800 (as described herein, see
As will be described herein, the aspects of the disclosed embodiment define substrate processing tool variables and associated performance indices that are employed in support of an adaptive controls and diagnostics framework that modify system level performance attributes to maximize the productivity metrics, such as wafers processed per hour (WPH), increased tool uptime (e.g., time the processing system is operational), reduced service times, reduced preventative maintenance occurrences, and reduced setup times.
Referring to
The controller 11091 may be a closed loop controller having a master controller, cluster controllers and autonomous remote controllers such as those disclosed in U.S. Pat. No. 7,904,182 entitled “Scalable Motion Control System” issued on Mar. 8, 2011 the disclosure of which is incorporated herein by reference in its entirety. In other aspects, any suitable controller and/or control system may be utilized. As will be described herein, the controller 11091 is communicably connected to a drive section (e.g., such as drive section 299—see
In one aspect, the front end 11000 generally includes load port modules (also referred to herein as a workpiece load station) 11005 and a mini-environment 11060 such as for example an equipment front end module (EFEM) (which in some aspects includes a wafer sorting function). In other aspects the processing stations include wafer buffers, wafer inverters and wafer shuffle stations (which may be located in the vacuum back end 11020, in the front end 11000 and/or connecting the front end 11000 with vacuum the vacuum back end 11020 (e.g. such as in a load lock). The front end 11000 and vacuum back end 11020 each include a frame which when coupled to each other form a frame 11090F of the semiconductor processing system 11090. The load port modules 11005 may be box opener/loader to tool standard (BOLTS) interfaces that conform to SEMI standards E15.1, E47.1, E62, E19.5 or E1.9 for 300 mm load ports, front opening or bottom opening boxes/pods and cassettes. In other aspects, the load port modules may be configured as 200 mm wafer or 450 mm wafer interfaces or any other suitable wafer interfaces such as for example larger or smaller wafers or flat panels for flat panel displays. Although two load port modules 11005 are shown in
In one aspect, the mini-environment 11060 generally includes any suitable transport robot 11013. In one aspect the transport robot 11013 may be a track mounted robot such as that described in, for example, U.S. Pat. Nos. 6,002,840 and 7,066,707, the disclosures of which are incorporated by reference herein in their entireties or in other aspects, any other suitable transport robot having any suitable configuration. The mini-environment 11060 may provide a controlled, clean zone for wafer transfer between multiple load port modules.
The vacuum load lock 11010 may be located between and connected to the mini-environment 11060 and the vacuum back end 11020. It is noted that the term vacuum as used herein denotes a high vacuum such as 10−5 Torr or below in which the wafers are processed. The vacuum load lock 11010 generally includes atmospheric and vacuum slot valves. The slot valves may provide the environmental isolation employed to evacuate the load lock after loading a wafer from the atmospheric front end and to maintain the vacuum in the transport chamber when venting the lock with an inert gas such as nitrogen. In one aspect, the vacuum load lock 11010 includes an aligner 11011 for aligning a fiducial of the wafer to a desired position for processing, while in other aspects alignment of the wafer is effected with the transport robot as described herein. In other aspects, the vacuum load lock may be located in any suitable location of the processing apparatus and have any suitable configuration and/or metrology equipment.
The vacuum back end 11020 generally includes a transport chamber 11025, one or more processing station(s) or module(s) 11030 and any suitable transport robot 11014. The transport robot 11014 will be described below and may be located within the transport chamber 11025 to transport wafers between the vacuum load lock 11010 and the various processing modules 11030. The processing modules 11030 may operate on the wafers through various deposition, etching, or other types of processes to form electrical circuitry or other desired structure on the wafers. Typical processes include but are not limited to thin film processes that use a vacuum such as plasma etch or other etching processes, chemical vapor deposition (CVD), plasma vapor deposition (PVD), implantation such as ion implantation, metrology, rapid thermal processing (RTP), dry strip atomic layer deposition (ALD), oxidation/diffusion, forming of nitrides, vacuum lithography, epitaxy (EPI), wire bonder and evaporation or other thin film processes that use vacuum pressures. The processing modules 11030 are connected to the transport chamber 11025 to allow wafers to be passed from the transport chamber 11025 to the processing modules 11030 and vice versa. In one aspect the load port modules 11005 and load ports 11040 are substantially directly coupled to the vacuum back end 11020 so that a substrate cassette 11050 mounted on the load port interfaces substantially directly (e.g. in one aspect at least the mini-environment 11060 is omitted while in other aspects the vacuum load lock 11010 is also omitted such that the substrate cassette 11050 is pumped down to vacuum in a manner similar to that of the vacuum load lock 11010) with a vacuum environment of the transport chamber 11025 and/or a processing vacuum of a process module 11030 (e.g. the processing vacuum and/or vacuum environment extends between and is common between the process module 11030 and the substrate cassette 11050).
Referring now to
Referring to
As also noted before, transport chamber modules 18B, 18i have one or more corresponding transport apparatus 26B, 26i, which may include one or more aspects of the disclosed embodiment described herein, located therein. The transport apparatus 26B, 26i of the respective transport chamber modules 18B, 18i may cooperate to provide the linearly distributed workpiece transport system in the transport chamber. In this aspect, the transport apparatus 26B may have a general SCARA arm configuration (see also
In the aspect of the disclosed embodiment shown in
Referring now to
Referring to
Movement of the substrate transport apparatus is effected by the controller 11091 so as to move the arm 550A (which is similar to those described herein) to the different substrate holding positions of the substrate processing system 555 (which is similar to those described herein). The controller 11091 is communicably coupled to at least one arm motion sensor 566 and to at least one system metrology sensor 500A-500z (where “z” is an integer and denotes an upper limit on the number of system metrology sensors—see
The controller 11091 is configured to effect movement of the arm 550A (via commands to the drive section 299) based on feedback from the at least one system metrology sensor 500A-500z. The feedback embodies the system metrology predetermined characteristics of one or more system components 800 (e.g., wafer handlers (e.g., robotic manipulators), slot valves, load locks, aligners, process modules, transfer modules, front end units, load ports, substrate elevators, etc.—as described herein) of the substrate processing system 555 that may affect operation of the substrate transport apparatus 550. The controller 11091 may adapt the operation of the substrate transport apparatus 550 depending on the system metrology predetermined characteristics of the system components 800. This sensor feedback is obtained from the at least one system metrology sensor 500A-500z, as raw sensing variables that are employed (as described herein) to adaptively operate the substrate transport apparatus 550 (which is similar to those substrate transport apparatus described herein). In some aspects, system metrology predetermined characteristics of the substrate transport apparatus 550 are employed by the controller along with system metrology predetermined characteristics of other different system components 800 to effect the adaptive operation of the substrate transport apparatus 550. Further, while the aspects of the disclosed embodiment are described herein as adaptively operating the substrate transport apparatus 550, the operation of other components 800 (e.g., slot valves, aligners, elevators, etc.) may be adapted based on system metrology predetermined characteristics of the substrate transport apparatus 550 as other different components 800 of the substrate processing apparatus 555.
The at least one system metrology sensor 500A-500z may be one or more of a camera(s) (line-scan, two and/or three dimensional), charge-coupled device (CCD) array(s), vibration/seismic sensor(s) (e.g., accelerometer(s)), temperature sensor(s) (e.g., infrared or otherwise), ranging sensor(s) (e.g., distance sensor such as sonar, LIDAR, time-of-flight cameras, etc.), proximity sensor(s), electrical current sensor(s), fluid flow sensor(s), magnetic sensors (e.g., Hall effect, giant magneto resistive, etc.) and any other suitable sensor(s) for measuring operating characteristics of one or more components 800 of the substrate processing system 555 (which may be substantially similar to those substrate processing systems 410, 11090, 2099, 3000, 3000A, 3000B, 3000C described herein). The at least one system metrology sensor 500A-500z is integral to or coupled with a respective component of the substrate processing system 555 in any suitable manner. It is noted that while a valve 551 (such as a slot valve) and process chamber lid 552 are illustrated in
The substrate processing system 555 includes at least one modular metrology station 400, 400A-400D. Each modular metrology station 400, 400A-400D includes respective one(s) of the at least one system metrology sensor 500A-500z and/or respective ones of the at least one arm motion sensor 566. Each modular metrology station 400 (noting that modular metrology stations 400A-400D are substantially similar) also includes a sensor processing unit 300 that is communicably coupled (wired or wirelessly) to respective ones of the at least one system metrology sensor 500A-500z. The sensor processing unit 300 can be added or removed from the substrate processing system 555 as a modular unit. For example, in one aspect the sensor processing unit 300 is mounted with one or more of the respective system metrology sensor 500A-500z on a common base 496 (
The sensor processing unit 300 includes one or more central processing units CPU1-CPUn (where n is an integer that denotes an upper limit on the number of central processing units), one or more graphics processing units GPU1-GPUm (where m is an integer that denotes an upper limit on the number of graphics processing units), field programmable gate arrays FPGA1-FPGAk (where k is an integer that denotes an upper limit on the number of field programmable gate arrays), sensor interfaces SINT1-SINTr (where r is an integer that denotes an upper limit on the number of sensor interfaces), network interfaces NINT1-NINTs (where s is an integer that denotes an upper limit on the number of network interfaces), and a memory (including one or more of non-volatile memory NVM and volatile memory VM).
The sensor processing unit is configured (e.g., with suitable non-transitory computer program code executed by one or more of the central processing units CPU1-CPUn graphics processing units GPU1-GPUm, and field programmable gate arrays) to establish hardware interfaces that are compatible with respective ones of the system metrology sensors 500A-500z (e.g., in some aspects a plug-and-play sensor interface), extract raw data from the respective system metrology sensors 500A-500z, time stamp the extracted raw data, process the raw data from each system metrology sensor so as to transform the raw data into variables of interest (e.g., for controls and diagnostic purposes), and broadcast the processed data over a network. For example, the sensor processing unit 300 includes its own operating system and communicates (using associated network protocols) with any suitable controllers (e.g., such as a robot controller, processing system master controller 570 (which may be part of or integrated with controller 11091—see
In accordance with the disclosed embodiment, there may be different modular metrology stations 400, 400A-400D each having a different operating characteristic than another modular metrology station 400, 400A-400D so that a configuration of the different modular metrology stations 400, 400A-400D is based on the type and configuration of the component 800 to be monitored and the sensors employed to monitor the component 800. As a non-limiting example, the different operating characteristics may be a type of network the modular metrology stations 400, 400A-400D operate on. While in some aspects, the modular metrology stations 400, 400A-400D are configured to operate on a common network; in other aspects some of the modular metrology stations 400, 400A-400D are configured to operate on one network (e.g., EtherCat®, EtherNet®, and Firewire®, etc.) and others of the modular metrology stations 400, 400A-400D are configured to operate on another different network (e.g., a different one of EtherCat®, EtherNet®, and Firewire®, etc.) to effect, for example, supporting different types of hardware interfaces and different network protocols.
The modular metrology stations 400, 400A-400D are in communication with the controller 11091 to provide the data DAT2 from the at least one system metrology sensor 500A-500z in a deterministic and real-time manner while in other aspects the data DAT2 is provided asynchronously (or on demand). Here, the modular metrology stations 400, 400A-400D are configured to take data measurements (e.g., obtain the data DAT2) in association with substrate transport apparatus 550 motion, where sensor processing unit 300 of the modular metrology station 400, 400A-400D is configured to capture data from the at least one system metrology sensor 500A-500z at predetermined times. For example, the modular metrology station 400, 400A-400D data capture is triggered by or synchronized with arm 550A motion by the controller 11091 in any suitable manner. For example, controller 11091 is configured to effect broadcast of substrate transport apparatus 550 position data to the modular metrology station 400, 400A-400D, where data is captured at predetermined positions of the substrate transport apparatus 550 within the substrate transport space of the substrate processing system 555.
As an example, where the modular metrology station 400, 400A-400D includes a vision sensor (e.g., camera) positioned to capture data pertaining to an edge of the substrate S carried by the end effector EE of the substrate processing apparatus 550, the broadcast position of the substrate transport apparatus 550 informs, the modular metrology station 400, 400A-400D, of the time to capture data from the camera so that the edge of the substrate S is within a field of view of the camera coupled to the modular metrology station 400, 400A-400D. Another example is where the modular metrology station 400, 400A-400D includes a temperature sensor positioned to measure substrate S temperature(s) before and/or after substrate processing within a process module, where data is collected from the temperature sensor based on a broadcast position of the substrate transport apparatus 550 so that the substrate S is in a predetermined positioned relative to the temperature sensor to effect temperature measurement(s) of the substrate S. As a further example, the modular metrology station 400, 400A-400D is configured to capture data, based on a broadcast position of the substrate transport apparatus 550, pertaining to a time interval of vertical acceleration of the substrate S while the substrate transport apparatus is extended at a process module to pick/place the substrate S. In other aspects, the data capture of the modular metrology station 400, 400A-400D may be effected based on buffering and/or time stamped position data of the substrate transport apparatus 550 that is communicated to the modular metrology station 400, 400A-400D by the controller 11091 so that the data captured by the modular metrology station 400, 400A-400D is within predetermined ranges of interest of the substrate transport apparatus 550 position.
As described above, the modular metrology station(s) 400, 400-400D includes one or more processing units (e.g., central processing units CPU1-CPUn, graphics processing units GPU1-GPUm, and/or field programmable gate arrays FPGA1-FPGAk) and memory (e.g., non-volatile memory NVM and/or volatile memory VM). As also described herein, the modular metrology station(s) 400, 400A-400D are coupled to the controller 11091 where the one or more processing units and memory of the modular metrology station(s) 400, 400A-400D may off-load or transfer memory and computational loads from the controller 11091 to the modular metrology station(s) 400, 400A-400D. Here, the modular metrology stations 400, 400A-400D may effect simplification of the controller 11091 (software and/or hardware) configuration/architecture (e.g., via the off-loading of memory and computation loads) and effect additional sensing/feedback near, for example a process module or other component 800 (such as substantially direct position feedback of the substrate within the substrate processing system 555), so as to provide an increased system data gathering capacity for system diagnosis and machine learning. In accordance with the disclosed embodiment, employment of the modular metrology stations 400, 400A-400D may provide a framework to generate encapsulated objects or defined classes (as in object oriented programming) where each modular metrology station 400, 400A-400D is represented within the controller 11091 software as an object. In some aspects, the modular metrology station 400, 400A-400D can be defined within an EtherCat® protocol context as part of a semiconductor device profile.
Still referring to
The controller 11091 is configured to register data DAT, DAT2, from at least one of the at least one arm motion sensor 566 and the at least one system metrology sensor 500A-500z. The controller 11091 is configured to determine from the registered data an operative value for each different respective predetermined functional characteristic and factor the operative value with respect to a corresponding reference value for each different predetermined functional characteristic. For example, the controller 11091 determines from the registered data DAT, DAT2 a set of predetermined functional characteristic indices or values (as described herein), where each index corresponds to a different respective predetermined functional characteristic, of arm motion transporting the substrate or of the system, and informs a relationship between the respective predetermined functional characteristic and a motion quality of the substrate S transported by the movable arm 550A. Each of the different predetermined functional characteristics is dependent on at least one unique control parameter of the arm 550A, or the system 555, controlled by controller 11091 commands.
As described herein, the controller 11091 is configured to determine from the set of predetermined functional characteristic indices an integral or combined holistic measure index or value (e.g., wafer motion quality index WMQIdx) of holistic motion quality of the substrate S transported by the movable arm 550A. Here, the aspects of the disclosed embodiment provide metrics or characteristics for the wafer motion quality and the employment of such metrics to adapt the substrate transport apparatus 550 motion controls, based on the metrics, to maximize tool throughput and tool uptime (e.g., operation of the tool).
As described herein, the respective predetermined functional characteristic includes at least one of a substrates processed per hour (WPH), position loop servos Gain Margin (GM), position loop servos Phase Margin (PM), Wafer Handling Error (WHE), Wafer Slippage (WS), Settling Time (ST), Wafer Handoff Vibration (WHV), Wafer Motion Wobble (WWE), and Wafer Motion Vibration (WMV). As also described herein, the set of predetermined functional characteristic indices includes an index for at least one of the respective predetermined functional characteristic that includes at least one of substrates processed per hour (WPH), position loop servos Gain Margin (GM), position loop servos Phase Margin (PM), Wafer Handling Error (WHE), Wafer Slippage (WS), Settling Time (ST), Wafer Handoff Vibration (WHV), Wafer Motion Wobble (WWE), and Wafer Motion Vibration (WMV). At least one of the system metrology predetermined characteristics is derivative of (e.g., dependent on) arm motion (or arm motion predetermined characteristics).
The wafer motion quality index WMQIdx represents a performance index or cost function of the substrate processing system 555 operation in terms of substrate handling performance variables such that a value of the wafer motion quality index WMQIdx is indicative of a substrate health (or a substrate health index) of the substrate processing system 555. A maximization of the wafer motion quality index WMQIdx maximizes the operating efficiency/performance of the substrate processing system 555. The wafer motion quality index WMQIdx is defined by motion automation variables that can be dynamically altered or adapted, such as through an adaptation component or control law (and associated parameters/gains) effected by the controller 11091, to maximize the wafer motion quality index WMQIdx. The wafer quality index WMQIdx is defined, as in equation [1], by substrate processing tool 555 performance variables that substantially directly impact the quality of the substrate S handling operation within the substrate processing tool 555.
where, WPHIdx is a wafers processed per hour index, GMIdx is a position loop servos gain margin index, PMIdx is a position loop servos phase margin index, WHEIdx is a wafer handling error index, WSIdx is a wafer slippage index, STIdx is a settling time index, WHVIdx is a wafer handoff vibration index, WWEIdx is a wafer motion wobble index, and WMVIdx is a wafer motion vibration index. The aforementioned indices are normalizations of the associated metrics/characteristics such that indices above 1 indicate the associated variable is performing above its nominal (e.g., reference) value. The aforementioned indices are defined as follows:
where, WPH is the current number of processed wafers per hour, WPHref is the nominal (reference) number of processed wafers per hour, GM is the motion servo stability gain margin, GMmin is the minimum acceptable motion servo stability gain margin, PM is the motion servo phase margin, PMmin is the minimum acceptable motion servo stability phase margin, WHE is the wafer handoff error, WHEmax is the maximum acceptable wafer handoff error, WS is the wafer slippage at the substrate transport apparatus 550 end effector EE (see, e.g.,
The wafers per hour WPH is determined in any suitable manner, such as by the average period between two processed wafers exiting the substrate processing apparatus 555. The wafers per hour WPH represents a flow of wafers or substrates S from/to the substrate processing apparatus 555 to/from the load locks (see, e.g.,
The wafer handoff error WHE is defined by a difference in reported wafer offsets (such as from any suitable position feedback system of the substrate processing apparatus, including but not limited to a modular metrology station 400B including an on-the-fly substrate centering sensor—see
The wafer slippage WS at the end effector EE (see, e.g.,
Motion settling time ST of the substrate transport apparatus 550 (such as of the arm 550A) is defined as the time between the end of a commanded arm motion and the time it takes for motion servo loop errors to settle within a predetermined tolerance. It is noted that the motion settling time ST would be zero if the motion servo loop errors were within their respective tolerances by the time the commanded motion ends; however, generally the predetermined tolerances are defined as the allowable settling error limits for position and velocity errors of each of the motion axes. The motion of the arm 550A is complete (e.g., settled) where the position and velocity errors for each of the motion axes are substantially simultaneously within the predetermined tolerances. An increasing trend in the motion settling time ST may indicate changes to the mechanical behavior of the substrate transport apparatus 550 such as increased friction or vibration.
The motion servo stability gain margin GM and the motion servo stability phase margin PM are and may be determined in any suitable manner such as with Bode plots. In accordance with the aspects of the disclosed embodiment the servo loops of each axis of motion of the substrate transport apparatus 550 are tuned so that the gain and phase stability margins are maximized and to account for variations of the substrate transport apparatus 550 operation effected by mechanical and/or environment operating conditions including, but not limited to, temperature gradients, thermal stress, bearing wear, and changes in transmission band tension. A decrease in the motion servo stability gain margin GM and the motion servo stability phase margin PM below minimum predetermined thresholds may present, in substrate transport apparatus 550 operation, motion quality symptoms (e.g., such as motion vibration and wafer slippage) and/or maintenance alerts being presented to an operator.
Wafer or substrate handoff vibration WHV is defined as a peak to peak tracking error of end effector EE motion during a wafer handoff operation (e.g., the vertical lift or lower motion of the wafer relative to a substrate holding station along a vertical Z axis of travel—see
The wafer motion vibration WMV is a measurement of the vibration of the wafer S during motion of the wafer S between substrate holding stations (e.g., between one or more of load ports, process modules, load locks, aligners, etc.). The wafer motion vibration WMV may be measured in any suitable manner where, for example, the wafer motion vibration WMV is defined as a peak value of the compound acceleration error among wafer transfers that effect processing one wafer cycle. In other aspects, the wafer motion vibration WMV may be determined by a root-mean-square of the compound acceleration error among the wafer transfers that effect processing of one wafer cycle. In still other aspects, the wafer motion vibration WMV is defined as a summation of power spectral density magnitudes of a motion acceleration or torque values across a prescribed range of frequencies for the wafer transfers that effect processing one wafer cycle.
Table 1 below indicates the correlation between the above-noted predetermined arm motion characteristics/metrics (motion automation variables) and a respective control parameter that may be employed in association with a given predetermined arm motion characteristic/metric.
As described above, the wafer motion quality index WMQIdx is defined by motion automation variables that can be dynamically altered or adapted, such as through an adaptive component or control law (and associated parameters/gains) effected by the controller 11091, to maximize the wafer quality index WMQIdx. Here, the controller 11091 is programmed with the adaptive control and/or machine learning-based law that commands changes in control parameters so as to generate the maximum wafer quality index WMQIdx (e.g., maximum holistic measure index), or minimize progression of adverse changes (as described herein) of the wafer quality index WMQIdx. The adaptive control and/or machine learning-based law adjusts the, e.g., the above-noted control parameters shown in Table 1 to effect maximization of the substrate processing apparatus 550 wafer motion quality index WMQIdx. It is noted that the adaptive control and/or machine learning-based law (described herein and in the examples provided below) may be effected at least in part by the controller 11091; however, as noted above, computations and/or memory may be offloaded from the controller 11091 to the modular metrology stations 400, 400A-400D described herein so that the modular metrology stations 400, 400A-400D may effect some of the computations and/or provide memory to effect the adaptive control and/or machine learning-based law.
For exemplary non-limiting purposes only, the wafer per hour WPH can be adjusted by the controller 11091 by modifying motion trajectory constraints as indicated (for exemplary purposes) in Table 1. The type of constraint (or limit) to be changed depends on a type of trajectory shape selected to perform motion of the arm 550A, such as described in U.S. Pat. No. 6,216,058 issued on Apr. 10, 2001, the disclosure of which is incorporated herein by reference in its entirety. The adaptive control and/or machine learning-based law is configured to determine which motion, of different types of motions the arm 550A may perform to transfer a wafer S, has the highest impact on the wafers per hour WPH metric.
Referring also to
Referring to
In the graph illustrated in
As described above and still referring to
Each of the system level variables listed in Table 2 may have an associated performance index in a manner similar to that described above equations [2] to [10]. As a result, a System Component Performance Index SCPIdx can also be incorporated into the definition of equation [1], such as added to the numerator of the fraction. In accordance with the aspects of the disclosed embodiment, the controller 11091 monitors the holistic measure index (e.g., the wafer motion quality index WMQIdx), identifies trends therein, and adaptively generates commands that effect changes to the control parameter varying the dependent predetermined functional characteristic and its corresponding index in response to the identified trends. For example, load locks (such as load locks 11010-
As another example, of adaptive control and/or machine learning-based law, the controller 11091 monitors changes in the holistic measure index (e.g., the wafer motion quality index WMQIdx) from transients in at least one index of a respective predetermined functional characteristic responsive to controller commands changing a control parameter determinative of the respective predetermined functional characteristic. For example, the opening and closing time intervals of the slot valves 551 may be employed as performance metrics for wafer process times of the substrate processing apparatus 555. As may be realized, the opening and closing time intervals of the slot valves 551 may also be indicative of slot valve seal wear. For example, changes in the slot valve 551 opening and closing time intervals can be an indication of required maintenance of the O-ring (or other suitable) seal that is part of the isolation apparatus. The slot valve 551 opening and closing time intervals may decrease the tool performance if a positive trend is observed in the time period it takes to open and close the slot valves 551. Here, this slot valve opening and closing time intervals and trends thereof (e.g., as obtained by the modular metrology stations 400A and suitable sensors 500A-500C thereof) may be employed by the controller 11091 to dynamically change a trajectory profile of a door 551D of the slot valve 551 to compensate for changes in the slot valve opening and closing time intervals to offset any adverse change to the wafer motion quality index WMQIdx.
The controller 11091 monitors changes in the wafer motion quality index WMQIdx from transients in at least one index of a respective predetermined functional characteristic and in response to a predetermined adverse change of the wafer motion quality index WMQIdx commands a change in a control parameter determinative of another respective predetermined functional characteristic that offsets, at least in part, the predetermined adverse change of the wafer motion quality index WMQIdx. For example, in the slot valve example described above, the controller 11091 may also (or in lieu of changing a trajectory profile of a door 551D of the slot valve 551 to compensate for changes in the slot valve opening and closing time intervals) modify (e.g., accelerate) the motion of the substrate transport apparatus 550 in a way to compensate for delays induced by the reduced slot valve 551 performance and offset any adverse change to the wafer motion quality index WMQIdx.
The controller 11091 is configured to compare a change in the wafer motion quality index WMQIdx from the transients in the at least one predetermined functional characteristic index (e.g., such as from one of wafers processed per hour index WPHIdx, position loop servos gain margin index GMIdx, position loop servos phase margin index PMIdx, wafer handling error index WHEIdx, wafer slippage index WSIdx, settling time index STIdx, wafer handoff vibration index WHVIdx, wafer motion wobble index WWEIdx, and wafer motion vibration index WMVIdx) relative to another change in the wafer motion quality index WMQIdx from other different transients in at least another different predetermined functional characteristic index (e.g., such as from a different one of wafers processed per hour index WPHIdx, position loop servos gain margin index GMIdx, position loop servos phase margin index PMIdx, wafer handling error index WHEIdx, wafer slippage index WSIdx, settling time index STIdx, wafer handoff vibration index WHVIdx, wafer motion wobble index WWEIdx, and wafer motion vibration index WMVIdx), and from the comparison of relative changes in the wafer motion quality index WMQIdx by the transients and by the other different transients, scale the at least one predetermined functional characteristic index and the at least another different predetermined functional characteristic index relative to each other. For example, referring to equations [2]—the controller 11091 may adjust the weight kvar of the at least one predetermined functional characteristic index and the at least another different predetermined functional characteristic index relative to each other so that each of the at least one predetermined functional characteristic index and the at least another different predetermined functional characteristic index relative to each other and the wafer motion quality index WMQIdx are optimized.
In accordance with the aspects of the disclosed embodiment, the modular metrology stations 400, 400A-400D and the adaptive control and/or machine learning-based law described herein provide the substrate processing apparatus 555 (and the components thereof) with monitoring of an occurrence of vibration and timing of vibration sources that are either self-induced or external. For example, with respect to effects of vibration on the substrate transport apparatus 550, it is noted that slot valve opening and closing may generate a vibration impulse that may impact the quality of the wafer motion in the substrate processing apparatus 555. The modular metrology stations, such as modular metrology station 400A, may capture the vibration information (e.g., with suitable sensors 500A-500C) in conjunction with slot valve 551 actuation timing and/or time stamp the capture of the vibration information. The robot controller, such as controller 11091 may control the substrate transport apparatus 550 so that high accuracy wafer placement by the substrate transport apparatus does not occur during actuation of the slot valve 551, where the slot valve 551 is part of a substrate processing station that is not associated with the high accuracy wafer placement. Here, the high accuracy wafer placements may be effected during “quiet” times, i.e. performed at times that are not subjected to the vibration of slot valve 551 actuation from anywhere within the substrate processing apparatus 555. In other aspects, other vibrations from sources external to the substrate transport apparatus 550, such as from vacuum pumps VP (such as from load lock 11010 and/or a process module 11030), may be detected by position sensors (such as drive section 299 encoders 299E—see
In accordance with the aspects of the disclosed embodiment, the modular metrology stations 400, 400A-400D and the adaptive control and/or machine learning-based law described herein provide the substrate processing apparatus 555 with monitoring of aligner 553 wafer align time performance. In a manner similar to that noted above, with respect to the slot valves 551, wafer align times may be affected by degradation of aligner 553 components such as wafer support (backside or edge contact) pads. Here, the wafer align times may decrease productivity of the substrate process apparatus 555 where an upward trending is observed in the wafer align times. The wafer align times, as measured by suitable sensors 500J of modular metrology station 400D are employed by the controller 11091 to dynamically adapt/alter motion performance (e.g., increase acceleration and/or velocity) of the substrate transport apparatus 550 to substantially avoid or otherwise mitigate a decrease in wafer productivity.
In some aspects, the modular metrology station 400D provides for the recordation and establishment of trends with respect to wafer aligner 553 wafer offsets and wafer fiducial locations. For example, as may be realized, given the repetitiveness of operations in the substrate processing apparatus 555, the aligner 553 may determine typical offsets and fiducial locations of the wafers S aligned thereby and convey that information to the controller 11091 and/or modular metrology station 400D. The typical offset and fiducial location information may be employed by the controller 11091 and/or the modular metrology station 400D (such as where computational ability is offloaded from the controller 11091 to the modular metrology station 400D) to predict wafer offsets before placing a wafer on the aligner 553. Here, the aligner 553 may be employed to scan wafer offsets within tighter ranges (smaller magnitudes) to improve the accuracy of the aligner 553.
As described herein, the modular metrology station 400C includes sensors 500G-500I disposed on a process chamber lid 552. The sensors 500G-500I may include temperature sensors disposed to monitor the wafer S temperature (and/or arm link temperatures as described herein) before and after the wafer S is processed within the respective substrate processing module 11030. As may be realized, the wafer S temperature may impact the acceleration limit of the substrate transport apparatus 550 end effector EE before wafer slippage occurs. Here, the motion of the substrate transport apparatus 550 may be optimized by the controller 11091 (or by the modular metrology station 400B where such optimization is conveyed to the controller 11091) so that wafer S transfer is effected at a maximum acceleration based on the wafer S temperature reported at a start of the wafer S transfer motion.
The modular metrology station 400C and the monitoring of the wafer S temperatures may effect an adaptive substrate transport apparatus 550 operation to increase a life of the substrate transport apparatus. For example, where data obtained by the modular metrology station 400C indicates an upward trend in a wafer S temperature from a substrate processing module 11030 pick operation, such wafer S temperature information may be conveyed from the modular metrology station 400C to the controller 11091 so that the controller 11091 may adaptively change the motion of the substrate transport apparatus 550 so that the motion (e.g., acceleration and/or velocity) is reduced and/or a robot idle time is increased to allow for bearings (and other components of the substrate transport apparatus 550) affected by the increased wafer/process module temperatures to cool down.
Still referring to
Referring to
Referring to table 3 below, additional substrate transport apparatus variables or predetermined functional characteristics may be employed as predetermined characteristics or metrics of the wafer motion quality index WMQIdx. The additional variables described in Table 3 are described in association with substrate transport apparatus performance within, for example, a template move. Suitable examples of template moves can be found in, for example, U.S. patent application Ser. No. 15/971,827 filed on May 4, 2018 and titled “Method and Apparatus for Health Assessment of Transport Apparatus”, the disclosure of which is incorporated herein by reference in its entirety.
A transport apparatus performance index RPIdx may be defined in terms of the variables described in Table 3 where the transport apparatus performance index RPIdx is defined as:
where, PMTIdx is a peak motor temperature index, PMCIdx is a peak motor current index, PMVIdx is a peak motor voltage index, MMWIdx is a peak motor mechanical work index, PTEIdx is a peak tracking error index, PAOIdx is a peak acceleration overshoot index, RMSIdx is a root-mean-square acceleration index, and PDMEIdx is a peak dynamic model error index. In a manner similar to that described above with respect to the definitions presented in equations [2] to [10], each index of equation may be defined as the ratio of the most recent value of the respective variable in Table 3 over its allowable threshold. The system substrate transport apparatus performance index RPIdx may be added to the numerator of equation [1] so that the wafer motion quality index WMQIdx is further defined as:
Referring again to
Referring to
Referring to
In accordance with one or more aspects of the disclosed embodiment a substrate processing system comprises:
In accordance with one or more aspects of the disclosed embodiment the respective predetermined functional characteristic includes at least one of a substrates processed per hour, position loop servos Gain Margin, position loop servos Phase Margin, Wafer Handling Error, Wafer Slippage, Settling Time, Wafer Handoff Vibration, Wafer Motion Wobble, and Wafer Motion Vibration.
In accordance with one or more aspects of the disclosed embodiment the respective predetermined functional characteristic includes at least one of substrates processed per hour and Wafer Slippage.
In accordance with one or more aspects of the disclosed embodiment the set of predetermined functional characteristic indices includes an index for at least one of the respective predetermined functional characteristic that includes at least one of substrates processed per hour, position loop servos Gain Margin, position loop servos Phase Margin, Wafer Handling Error, Wafer Slippage, Settling Time, Wafer Handoff Vibration, Wafer Motion Wobble, and Wafer Motion Vibration.
In accordance with one or more aspects of the disclosed embodiment the set of predetermined functional characteristic indices includes an index for at least one of the respective predetermined functional characteristic that includes at least one of substrates processed per hour and Wafer Slippage.
In accordance with one or more aspects of the disclosed embodiment at least one of the system metrology predetermined characteristics is derivative of arm motion.
In accordance with one or more aspects of the disclosed embodiment the controller is configured to determine from the registered data an operative value for each different respective predetermined functional characteristic and factor the operative value with respect to a corresponding reference value for each different predetermined functional characteristic.
In accordance with one or more aspects of the disclosed embodiment each different predetermined functional characteristic is dependent on at least one unique control parameter of the arm, or the system, controlled by controller commands.
In accordance with one or more aspects of the disclosed embodiment the controller monitors the holistic measure index, identifies trends therein, and adaptively generates commands that effect changes to the control parameter varying the dependent predetermined functional characteristic and its corresponding index in response to the identified trends.
In accordance with one or more aspects of the disclosed embodiment the controller monitors changes in the holistic measure index from transients in at least one index of a respective predetermined functional characteristic responsive to controller commands changing a control parameter determinative of the respective predetermined functional characteristic.
In accordance with one or more aspects of the disclosed embodiment the controller monitors changes in the holistic measure index from transients in at least one index of a respective predetermined functional characteristic and in response to a predetermined adverse change of the holistic measure index commands a change in a control parameter determinative of another respective predetermined functional characteristic that offsets, at least in part, the predetermined adverse change of the holistic measure index.
In accordance with one or more aspects of the disclosed embodiment the controller is configured to compare the change in the holistic measure index from the transients in the at least one predetermined functional characteristic index relative to another change in the holistic measure index from other different transients in at least another different predetermined functional characteristic index, and from the comparison of relative changes in holistic measure index by the transients and by the other different transients, scale the at least one predetermined functional characteristic index and the at least another different predetermined functional characteristic index relative to each other.
In accordance with one or more aspects of the disclosed embodiment the controller is programmed with an adaptive control and/or machine learning-based law that commands changes in control parameters so as to generate a maximum holistic measure index, or minimize progression of adverse changes of the holistic measure index.
In accordance with one or more aspects of the disclosed embodiment at least one of the predetermined functional characteristics is a system functional characteristic including at least one of a load lock pump and vent time, load lock vertical lift motion time, load lock vibration signature, slot valve time interval between opening and closing, slot valve time interval between subsequent openings, time slot valve opening and closing time stamp, slot valve vibration signature, substrate aligner align time, historical substrate offsets and fiducial locations, substrate temperature, movable arm temperatures, substrate transport apparatus flange temperature, vacuum level, and air flow.
In accordance with one or more aspects of the disclosed embodiment at least one of the predetermined functional characteristics is an arm mechanism functional characteristic including at least one of a motor temperature, motor current, motor voltage, motor mechanical work, end effector tracking error, end effector acceleration overshoot, end effector root-mean-square acceleration, and dynamic model error.
In accordance with one or more aspects of the disclosed embodiment the at least one arm motion sensor, and the at least one system metrology sensor is a modular metrology sensor having a common modular platform that is selectably configurable.
In accordance with one or more aspects of the disclosed embodiment a substrate processing system comprises:
In accordance with one or more aspects of the disclosed embodiment the substrate transport includes a transport arm and a drive section configured to move the transport arm and transport the substrate held on an end effector of the transport arm.
In accordance with one or more aspects of the disclosed embodiment the respective predetermined functional characteristic includes at least one of a substrates processed per hour, position loop servos Gain Margin, position loop servos Phase Margin, Wafer Handling Error, Wafer Slippage, Settling Time, Wafer Handoff Vibration, Wafer Motion Wobble, and Wafer Motion Vibration.
In accordance with one or more aspects of the disclosed embodiment the respective predetermined functional characteristic includes at least one of substrates processed per hour and Wafer Slippage.
In accordance with one or more aspects of the disclosed embodiment the set of predetermined functional characteristic indices includes an index for at least one of the respective predetermined functional characteristic that includes at least one of substrates processed per hour, position loop servos Gain Margin, position loop servos Phase Margin, Wafer Handling Error, Wafer Slippage, Settling Time, Wafer Handoff Vibration, Wafer Motion Wobble, and Wafer Motion Vibration.
In accordance with one or more aspects of the disclosed embodiment the set of predetermined functional characteristic indices includes an index for at least one of the respective predetermined functional characteristic that includes at least one of substrates processed per hour and Wafer Slippage.
In accordance with one or more aspects of the disclosed embodiment at least one of the process echelon metrology predetermined characteristics is derivative of substrate transport arm motion.
In accordance with one or more aspects of the disclosed embodiment the controller is configured to:
In accordance with one or more aspects of the disclosed embodiment each different predetermined functional characteristic is dependent on at least one unique control parameter of the substrate transport, or the substrate processing system, controlled by controller commands.
In accordance with one or more aspects of the disclosed embodiment the controller monitors the holistic measure index, identifies trends therein, and adaptively generates commands that effect changes to the control parameter varying the dependent predetermined functional characteristic and its corresponding index in response to the identified trends.
In accordance with one or more aspects of the disclosed embodiment the controller monitors changes in the holistic measure index from transients in at least one index of a respective predetermined functional characteristic responsive to controller commands changing a control parameter determinative of the respective predetermined functional characteristic.
In accordance with one or more aspects of the disclosed embodiment the controller monitors changes in the holistic measure index from transients in at least one index of a respective predetermined functional characteristic and in response to a predetermined adverse change of the holistic measure index commands a change in a control parameter determinative of another respective predetermined functional characteristic that offsets, at least in part, the predetermined adverse change of the holistic measure index.
In accordance with one or more aspects of the disclosed embodiment the controller is configured to compare the change in the holistic measure index from the transients in the at least one predetermined functional characteristic index relative to another change in the holistic measure index from other different transients in at least another different predetermined functional characteristic index, and from the comparison of relative changes in holistic measure index by the transients and by the other different transients, scale the at least one predetermined functional characteristic index and the at least another different predetermined functional characteristic index relative to each other.
In accordance with one or more aspects of the disclosed embodiment the controller is programmed with an adaptive control and/or machine learning-based law that commands changes in control parameters so as to generate a maximum holistic measure index, or minimize progression of adverse changes of the holistic measure index.
In accordance with one or more aspects of the disclosed embodiment at least one of the predetermined functional characteristics is a system functional characteristic including at least one of a load lock pump and vent time, load lock vertical lift motion time, load lock vibration signature, slot valve time interval between opening and closing, slot valve time interval between subsequent openings, time slot valve opening and closing time stamp, slot valve vibration signature, substrate aligner align time, historical substrate offsets and fiducial locations, substrate temperature, movable arm temperatures, substrate transport apparatus flange temperature, vacuum level, and air flow.
In accordance with one or more aspects of the disclosed embodiment at least one of the predetermined functional characteristics is an arm mechanism functional characteristic including at least one of a motor temperature, motor current, motor voltage, motor mechanical work, end effector tracking error, end effector acceleration overshoot, end effector root-mean-square acceleration, and dynamic model error.
In accordance with one or more aspects of the disclosed embodiment the transport echelon sensors, and the metrology echelon sensors are modular metrology sensors having respective common modular platforms that are selectably configurable.
In accordance with one or more aspects of the disclosed embodiment a method comprises:
In accordance with one or more aspects of the disclosed embodiment the respective predetermined functional characteristic includes at least one of a substrates processed per hour, position loop servos Gain Margin, position loop servos Phase Margin, Wafer Handling Error, Wafer Slippage, Settling Time, Wafer Handoff Vibration, Wafer Motion Wobble, and Wafer Motion Vibration.
In accordance with one or more aspects of the disclosed embodiment the respective predetermined functional characteristic includes at least one of substrates processed per hour and Wafer Slippage.
In accordance with one or more aspects of the disclosed embodiment the set of predetermined functional characteristic indices includes an index for at least one of the respective predetermined functional characteristic that includes at least one of substrates processed per hour, position loop servos Gain Margin, position loop servos Phase Margin, Wafer Handling Error, Wafer Slippage, Settling Time, Wafer Handoff Vibration, Wafer Motion Wobble, and Wafer Motion Vibration.
In accordance with one or more aspects of the disclosed embodiment the set of predetermined functional characteristic indices includes an index for at least one of the respective predetermined functional characteristic that includes at least one of substrates processed per hour and Wafer Slippage.
In accordance with one or more aspects of the disclosed embodiment at least one of the system metrology predetermined characteristics is derivative of arm motion.
In accordance with one or more aspects of the disclosed embodiment the method further comprises, with the controller, determining from the registered data an operative value for each different respective predetermined functional characteristic and factor the operative value with respect to a corresponding reference value for each different predetermined functional characteristic.
In accordance with one or more aspects of the disclosed embodiment each different predetermined functional characteristic is dependent on at least one unique control parameter of the arm, or the system, controlled by controller commands.
In accordance with one or more aspects of the disclosed embodiment the method further comprises, with the controller, monitoring the holistic measure index, identifying trends therein, and adaptively generating commands that effect changes to the control parameter varying the dependent predetermined functional characteristic and its corresponding index in response to the identified trends.
In accordance with one or more aspects of the disclosed embodiment the method further comprises, with the controller, monitoring changes in the holistic measure index from transients in at least one index of a respective predetermined functional characteristic responsive to controller commands changing a control parameter determinative of the respective predetermined functional characteristic.
In accordance with one or more aspects of the disclosed embodiment the method further comprises, with the controller, monitoring changes in the holistic measure index from transients in at least one index of a respective predetermined functional characteristic and in response to a predetermined adverse change of the holistic measure index commanding a change in a control parameter determinative of another respective predetermined functional characteristic that offsets, at least in part, the predetermined adverse change of the holistic measure index.
In accordance with one or more aspects of the disclosed embodiment the method further comprises, with the controller, comparing the change in the holistic measure index from the transients in the at least one predetermined functional characteristic index relative to another change in the holistic measure index from other different transients in at least another different predetermined functional characteristic index, and from the comparison of relative changes in holistic measure index by the transients and by the other different transients, scaling the at least one predetermined functional characteristic index and the at least another different predetermined functional characteristic index relative to each other.
In accordance with one or more aspects of the disclosed embodiment the controller is programmed with an adaptive control and/or machine learning-based law that commands changes in control parameters so as to generate a maximum holistic measure index, or minimize progression of adverse changes of the holistic measure index.
In accordance with one or more aspects of the disclosed embodiment at least one of the predetermined functional characteristics is a system functional characteristic including at least one of a load lock pump and vent time, load lock vertical lift motion time, load lock vibration signature, slot valve time interval between opening and closing, slot valve time interval between subsequent openings, time slot valve opening and closing time stamp, slot valve vibration signature, substrate aligner align time, historical substrate offsets and fiducial locations, substrate temperature, movable arm temperatures, substrate transport apparatus flange temperature, vacuum level, and air flow.
In accordance with one or more aspects of the disclosed embodiment at least one of the predetermined functional characteristics is an arm mechanism functional characteristic including at least one of a motor temperature, motor current, motor voltage, motor mechanical work, end effector tracking error, end effector acceleration overshoot, end effector root-mean-square acceleration, and dynamic model error.
In accordance with one or more aspects of the disclosed embodiment the at least one arm motion sensor, and the at least one system metrology sensor is a modular metrology sensor having a common modular platform that is selectably configurable.
In accordance with one or more aspects of the disclosed embodiment a method comprises:
In accordance with one or more aspects of the disclosed embodiment the substrate transport includes a transport arm and a drive section configured to move the transport arm and transport the substrate held on an end effector of the transport arm.
In accordance with one or more aspects of the disclosed embodiment the respective predetermined functional characteristic includes at least one of a substrates processed per hour, position loop servos Gain Margin, position loop servos Phase Margin, Wafer Handling Error, Wafer Slippage, Settling Time, Wafer Handoff Vibration, Wafer Motion Wobble, and Wafer Motion Vibration.
In accordance with one or more aspects of the disclosed embodiment the respective predetermined functional characteristic includes at least one of substrates processed per hour and Wafer Slippage.
In accordance with one or more aspects of the disclosed embodiment the set of predetermined functional characteristic indices includes an index for at least one of the respective predetermined functional characteristic that includes at least one of substrates processed per hour, position loop servos Gain Margin, position loop servos Phase Margin, Wafer Handling Error, Wafer Slippage, Settling Time, Wafer Handoff Vibration, Wafer Motion Wobble, and Wafer Motion Vibration.
In accordance with one or more aspects of the disclosed embodiment the set of predetermined functional characteristic indices includes an index for at least one of the respective predetermined functional characteristic that includes at least one of substrates processed per hour and Wafer Slippage.
In accordance with one or more aspects of the disclosed embodiment at least one of the process echelon metrology predetermined characteristics is derivative of substrate transport arm motion.
In accordance with one or more aspects of the disclosed embodiment method further comprises, with the controller:
In accordance with one or more aspects of the disclosed embodiment each different predetermined functional characteristic is dependent on at least one unique control parameter of the substrate transport, or the substrate processing system, controlled by controller commands.
In accordance with one or more aspects of the disclosed embodiment method further comprises, with the controller, monitoring the holistic measure index, identifying trends therein, and adaptively generating commands that effect changes to the control parameter varying the dependent predetermined functional characteristic and its corresponding index in response to the identified trends.
In accordance with one or more aspects of the disclosed embodiment method further comprises, with the controller, monitoring changes in the holistic measure index from transients in at least one index of a respective predetermined functional characteristic responsive to controller commands changing a control parameter determinative of the respective predetermined functional characteristic.
In accordance with one or more aspects of the disclosed embodiment method further comprises, with the controller, monitoring changes in the holistic measure index from transients in at least one index of a respective predetermined functional characteristic and in response to a predetermined adverse change of the holistic measure index commanding a change in a control parameter determinative of another respective predetermined functional characteristic that offsets, at least in part, the predetermined adverse change of the holistic measure index.
In accordance with one or more aspects of the disclosed embodiment method further comprises, with the controller, comparing the change in the holistic measure index from the transients in the at least one predetermined functional characteristic index relative to another change in the holistic measure index from other different transients in at least another different predetermined functional characteristic index, and from the comparison of relative changes in holistic measure index by the transients and by the other different transients, scaling the at least one predetermined functional characteristic index and the at least another different predetermined functional characteristic index relative to each other.
In accordance with one or more aspects of the disclosed embodiment the controller is programmed with an adaptive control law that commands changes in control parameters so as to generate a maximum holistic measure index, or minimize progression of adverse changes of the holistic measure index.
In accordance with one or more aspects of the disclosed embodiment at least one of the predetermined functional characteristics is a system functional characteristic including at least one of a load lock pump and vent time, load lock vertical lift motion time, load lock vibration signature, slot valve time interval between opening and closing, slot valve time interval between subsequent openings, time slot valve opening and closing time stamp, slot valve vibration signature, substrate aligner align time, historical substrate offsets and fiducial locations, substrate temperature, movable arm temperatures, substrate transport apparatus flange temperature, vacuum level, and air flow.
In accordance with one or more aspects of the disclosed embodiment at least one of the predetermined functional characteristics is an arm mechanism functional characteristic including at least one of a motor temperature, motor current, motor voltage, motor mechanical work, end effector tracking error, end effector acceleration overshoot, end effector root-mean-square acceleration, and dynamic model error.
In accordance with one or more aspects of the disclosed embodiment the transport echelon sensors, and the metrology echelon sensors are modular metrology sensors having respective common modular platforms that are selectably configurable.
It should be understood that the foregoing description is only illustrative of the aspects of the disclosed embodiment. Various alternatives and modifications can be devised by those skilled in the art without departing from the aspects of the disclosed embodiment. Accordingly, the aspects of the disclosed embodiment are intended to embrace all such alternatives, modifications and variances that fall within the scope of any claims appended hereto. Further, the mere fact that different features are recited in mutually different dependent or independent claims does not indicate that a combination of these features cannot be advantageously used, such a combination remaining within the scope of the aspects of the disclosed embodiment.
Number | Date | Country | Kind |
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PCT/US2024/010885 | Jan 2024 | WO | international |
This application is the National Stage of International Application Number PCT/US2024/010885 having an International Filing Date of 9 Jan. 2024, which designated the United States of America, which claims priority from, and the benefit of U.S. provisional patent application No. 63/479,431 filed Jan. 11, 2023, the disclosure of which is incorporated herein by reference it its entirety.
Number | Date | Country | |
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63479431 | Jan 2023 | US |