Sulfur hexafluoride recycling system and method for recycling sulfur hexafluoride

Abstract

The present invention relates to a system and method for the recycling of sulfur hexafluoride (SF6), from a waste gas of a manufacturing process, such as a semiconductor processing method. In particular, the present invention provides a simplified system and method that utilizes additional SF6 as a purge gas for the system pump and allows relatively easy separation of the SF6 from the other waste gas components.

Description

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic drawing of a prior art semiconductor processing system

FIG. 2 is a schematic drawing of a system according to one embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention provides a simplified method and system for the recycle of SF₆, particularly from a semiconductor processing method. In particular, FIG. 2 is a schematic drawing showing a system according to the present invention, wherein a source of recycled SF₆ 110, and a source of O₂ 120, provide a mixture of gas to a plasma chamber 130. A source of fresh SF₆ 150, is provided to introduce SF₆ at the purge inlet of the process pump 140, and therefore eliminate the need for a separate purge gas, such as N₂. The amount of SF₆ from SF₆ source 150, is up to 100% of the amount of recycled SF₆ provided from recycled SF₆ source 110, used during the process. Preferable, the amount of fresh SF₆ is from 3 standard liters per minute (slm) to 50 slm. Most commercial pumps can easily handle the added flow rate that may be more than 50 slm through the purge. However, the pump 140, should be chosen to meet this criteria. Preferably the pump 140, is a dry pump, but other types, such as oil pumps can be used.

As noted above, up to 25% of the recycled SF₆ 110 will typically react with materials such as silicon or silicon-based insulators deposited in chamber 130. In a process where cleaning gases are recycled, the gas that does react needs to be replenished. In particular, the total flow rate of SF₆ gas into the plasma chamber 130 must be regulated to be relatively constant. In the present invention, this is accomplished by the regulation of the SF₆ gas flow rate from the fresh SF₆ source 150 into the purge inlet of the pump 140. For example, a mass flow controller can measure the flow rate of the fresh SF₆ and provide a representative signal to an electronic control system.

In order to provide a purified stream of SF₆, as shown in FIG. 2, the gas exiting the pump 140, is sent through a caustic wet scrubber 160, and is scrubbed to remove SiF₄, HF, sulfur oxides and other gaseous compounds resulting from the plasma reaction between SF₆ and the chamber deposits. The remaining gas is then demisted in a demister 170, and dried in a dryer 180, to produce an SF₆ stream that can be recycled. The method and system of the present invention produces an SF₆ recycle stream having a purity greater than 99.9% that is sufficient for reuse as a semiconductor processing gas.

Optionally, a gas accumulator 190, may be included in the recycle line to serve as a gas buffer. Such an accumulator may be necessary to form a buffer between the instantaneous demand and the instantaneous supply of the SF₆ gas. For example, one simple form of an accumulator is a tank that may be pressurized by the vacuum pump or an auxiliary compressor.

The present invention is particularly useful for etching processes, such as chamber cleaning, FPD etch, MEMS etching processes and Si wafer thinning, among others. The present invention provides several advantages over systems and methods known in the prior art. In particular, by providing a system and method that allows for simplified recycle of SF₆, a significant amount of waste can be eliminated. As noted above, this is beneficial from both an environmental and an economic perspective.

It is anticipated that other embodiments and variations of the present invention will become readily apparent to the skilled artisan in the light of the foregoing description and it is intended that such embodiments and variations likewise be included within the scope of the invention as set out in the appended claims.

Claims

1. A method for the recovering SF6 from a waste gas stream of a manufacturing system, comprising: drawing the waste gas stream from a process chamber of the manufacturing system;wet scrubbing the waste gas stream to remove non SF6 gas components and to produce a scrubbed gas stream;removing water vapor from the scrubbed gas stream to produce a dry gas stream of SF6.

2. A method according to claim 1, wherein drawing the waste gas stream comprises drawing with a pump.

3. A method according to claim 2, wherein the pump is a vacuum pump.

4. A method according to claim 2, wherein the pump is a dry vacuum pump.

5. A method according to claim 2, wherein the dry gas stream is recycled to the process chamber of the manufacturing system.

6. A method according to claim 5, wherein make up SF6 is added to the dry gas stream prior to recycling to the process chamber.

7. A method according to claim 6, wherein the make up SF6 is added to a recycle loop for the dry gas steam.

8. A method according to claim 6, wherein the make up SF6 is added as the purge gas to the pump.

9. A method according to claim 6, further comprising controlling the flow rate of SF6 to the process chamber to maintain a constant flow rate.

10. A method according to claim 1, wherein the manufacturing system is a semiconductor manufacturing system.

11. A method according to claim 10, wherein the process chamber is a plasma chamber.

12. A method for the recovering SF6 from a waste gas stream of a manufacturing system, comprising: drawing the waste gas stream from a process chamber of the manufacturing system using a pump;providing SF6 gas to the purge side of the pump to produce of mixture of SF6 gas and waste gas;wet scrubbing the mixture to remove non SF6 gas components and to produce a scrubbed mixture;removing water vapor from the scrubbed mixture to produce a dry gas stream of SF6.

13. A method according to claim 12, wherein the non SF6 gas components include SF4, HF and sulfur oxides.

14. A method according to claim 12, wherein removing water vapor comprises demisting the mixture and drying the mixture.

15. A method according to claim 12, wherein the dry gas stream is recycled to the process chamber of the manufacturing system.

16. A method according to claim 12, wherein providing SF6 gas comprises providing an amount of SF6 equal to the amount of SF6 expended in the process chamber.

17. A method according to claim 1, further comprising accumulating the dry gas stream.

18. A manufacturing system comprising: a process chamber having at least one inlet and at least one outlet;a source of recycled SF6 gas communicating with the at least one inlet of the process chamber;a pump having an inlet communicating with the at least one outlet of the process chamber, a purge gas inlet and an outlet;a source of fresh SF6 gas communicating with the purge gas inlet of the pump;a scrubber communicating with the outlet the pump;drying means communicating with the scrubber and with the source of recycled SF6 gas.

19. A system according to claim 18, wherein the scrubber is a caustic wet scrubber.

20. A system according to claim 18, wherein the manufacturing system is a semiconductor processing system.

21. A system according to claim 18, wherein the process chamber is a plasma chamber.

22. A system according to claim 18, wherein the pump is a vacuum pump.

23. A system according to claim 18, wherein the pump is a dry vacuum pump.

24. A system according to claim 18, wherein the source of recycled SF6 gas comprises an accumulator.

25. A system according to claim 24, wherein the accumulator is a buffer tank.

26. A system according to claim 18, wherein the drying means comprises a demister and a dryer.

27. A system according to claim 18, further comprising control means to maintain a constant flow rate of SF6 gas to the process chamber.