BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a (111) pole diagram of an epitaxial aluminum layer deposited on 36°-rotation Y-X propagation LiTaO3 single crystal piezo-electric substrate;
FIG. 2 is a (111) pole diagram of an epitaxial aluminum layer deposited on 39°-rotation Y-X propagation LiTaO3 single crystal piezo-electric substrate;
FIG. 3 is a (111) pole diagram of an epitaxial aluminum layer deposited on 46°-rotation Y-X propagation LiTaO3 single crystal piezo-electric substrate;
FIG. 4 is a (111) pole diagram of an epitaxial aluminum layer deposited on 48°-rotation Y-X propagation LiTaO3 single crystal piezo-electric substrate;
FIG. 5 is a (111) pole diagram of an epitaxial aluminum layer deposited on 52°-rotation Y-X propagation LiTaO3 single crystal piezo-electric substrate;
FIG. 6 is a (111) pole diagram of an epitaxial aluminum layer deposited on 64°-rotation Y-X propagation LiNbO3 single crystal piezo-electric substrate; and
FIG. 7 is a conceptual diagram illustrating a SAW device according to one embodiment of the present invention.