SYSTEM AND A METHOD FOR IMPROVED CROSSHATCH NANOMACHINING OF SMALL HIGH ASPECT THREE DIMENSIONAL STRUCTURES BY CREATING ALTERNATING SUPERFICIAL SURFACE CHANNELS

Abstract

This invention provides the user the ability to accurately nanomachine surfaces with reduced tip induced errors. Nanomaching has two types of errors, a first type of error is brought about by the tip's shape and its aspect ratio. A second type of error due to the tip's deflection as it works the material. Therefore, embodiments of the present invention minimizes tip deflection errors allowing allow high aspect Nano-bits to reliably and accurately nanomachine small high aspect three dimensional structures to repair and rejuvenate photomasks

Description

FIELD OF THE INVENTION

This invention provides a user the ability to accurately nanomachine the surface of a photomask with reduction of tip induced errors. For example, tip deflection errors are minimized allowing high aspect nano-bits to reliably and accurately nanomachine small high aspect three dimensional structures to repair and rejuvenate photomasks. The lifetime of the nano-bits are also extended because the will be less strain placed upon them in operation,

BACKGROUND OF THE INVENTION

The ability to machine structures of ever-decreasing dimensions is governed by many factors. One such factor is the material's atomic properties with regard to its reduced dimensions. For example, working at the nanometre scale, devices derive their properties from the wave nature of electrons and must be taken into account when machining. An atomic force microscope (AFM) or scanning force microscope (SFM) is a very high-resolution type of scanning probe microscope commonly used to investigate nano-structures. It has a demonstrated resolution of fractions of a nanometre, which is more than 1000 times better than the optical diffraction limit. Information is gathered by “feeling” the surface's atomic forces with a mechanical probe. Piezoelectric elements facilitate tiny, but extremely accurate and precise movements by electronic or computer control.

The ability to repair photomasks and substrates at a nanometer scale is particularly desirous and has been facilitated by the advent of the AFM. A photomask is an opaque plate with holes or transparencies that allow electronic radiation energy, usually light to pass through in a defined pattern. They are commonly used in photolithography, which is a process used in micro fabrication of microprocessors to selectively remove parts of a thin film or the bulk of a substrate. It uses the electronic radiation energy to transfer a geometric pattern from a photomask to a electromagnetic radiation sensitive chemical photo resist on the substrate. A series of chemical treatments then engraves the exposure pattern into the material underneath the photo resist. In a complex integrated circuit, for example, a Complementary Metal-Oxide-Semiconductor (CMOS) wafer will go through the photolithographic cycle up to 100 times and involve up to 100 photomask (one for each layer).

Moore's law describes a long-term trend in the history of computing hardware. Since the invention of the integrated circuit in 1958, the number of transistors that can be placed inexpensively on an integrated circuit has increased exponentially, doubling approximately every two years The doubling was achieved mostly through the use of enhanced photolithography techniques employing photomasks. Over the past five decades the wavelength of the light source has been reduced to permit smaller feature size with photolithography, but the photomask complexity has also increased. As a result, photomask designers need ways to ensure repeatable and faithful reproduction of photomask's pattern onto the substrate. Therefore, the most critical issue for the production of photomasks is controlling and eliminating pattern defects in the photomasks.

Integrated circuit designers are using methods called Reticle-enhancement techniques (RETs) to improve reproduction reliability and have been used along with various exposure approaches, such as double-patterning and extreme-ultraviolet (EUV) technologies. One RET is optical proximity correction (OPC), in which subresolution changes to the shape of a feature greatly improve its printability. Smaller, more subtle, and increasingly unavoidable defects in the photomask's features can render expensive photomasks, or even an entire mask set worthless.

The types of defects on the photomask in need of removal include trimming of unwanted carbon patches, the sequential defect removal of growth particles and correcting irregularly shaped quartz bump defects. Currently, there are two options for photomask repair, Focused Ion Beam (FIB) or laser. While each technique has its advantages and unique capabilities, each has its particular limitations. Photomask repair technology has lagged well behind the capability requirements listed in the International Technology Roadmap for Semiconductors (ITRS). The ITRS is a set of documents produced by a group of semiconductor industry experts. These experts are representative of the sponsoring organizations which include the Semiconductor Industry Associations of the US, Europe, Japan, Korea and Taiwan.

Additionally, the need for sub-wavelength resolution has driven the implementation of phase-shifting photomasks for hyper-critical layer processing. The increased complexity of this layering technique has, in turn, dramatically increased photomask costs and cycle time. Advanced alternating phase shift photomasks may cost in excess of $10,000 per layer and take five or six times as long to produce as a standard photomask.

The production of even a single layer photomask for today's multicore microprocessors is a significantly difficult operation and the results are not always optimal. Additionally, the time to produce and quality check a single layer photomask is long. If a layer of a photomask has to be “reshot”, the time and cost both go up exponentially. The machines that produce the photomask are expensive, so a fabricator usually schedules their machine for continuous fabrication of many photomask jobs to recover their costs. If a rewrite of a photomask must be done, it will have an adverse effects to the production schedule of the fabrication plant, which may miss deadlines and lose contracts. Therefore, it is extremely desirable to be able to repair any existing defects on the photomask post production.

Repair of photomask defects is quickly becoming an in-line mask-production and maintenance necessity. This means the user of the photomask does not have the time luxury to have a new set of photomask created to replace a defective one. Even a miniscule defect on a photomask will render a microprocessor produced with the defective photomask inoperable.

Material-subtractive repair technology nanomachining employs an application of atomic force microscopy (AFM). Nanomachining removes mask material, such as opaque defects, with no chemical residuals and unsurpassed depth control. Past technical challenges included poor repair-sidewall angles and poor shape definition in extremely small, high-aspect-ratio patterns. FIG. 1 illustrates the stress placed upon nanomaching tip 14 removing a defect 11 within a photomask 10. The stress point 15 clearly illustrates the deformation of the nanomaching tip 14, which should be pryamidical. This shape is usually chosen because of its three sided cross sectional properties.

It is therefore desirable to have a method for fabricating precise high aspect ratio nanometer structures, especially to repair and rejuvenate photomasks used in photolithography using nanomaching and atomic force microscopy that ensures less nanomaching tip deflection, provides unsurpassed depth control and provides better sidewall shaping. The present invention satisfies that need, as well as others, and overcomes limitations in conventional fabrication methods.

SUMMARY OF THE INVENTION

The foregoing needs are met, to a great extent, by the present invention, wherein in one aspect a system and method are provided that in some embodiments a method of repairing a defect region of a photomask with a first nanomaching tip of a probe affixed to a cantilever arm, said method comprising the steps of positioning said first nanomaching tip inwardly by a first offset from non defect region into said defect region proximate to said surface region. Material is then removed from said surface region using AFM by moving said first nanomaching tip in a first direction and positioning said first nanomaching tip by a second offset distance from non defect region proximate to said surface region and removing material from said surface region using AFM by moving said first nanomaching tip in the opposite direction of the previous material removal direction. This is repeated while alternating first direction until said first probe reaches the non defect region of said photomask. More material is removed from said surface region using AFM by moving said first nanomaching tip in a second direction and repositioning said first nanomaching tip by a third offset distance from non defect region proximate to said surface region and removing material from said surface region using AFM by moving said first nanomaching tip in the opposite direction of the previous material removal direction. This is repeated while alternating said second direction until said first probe reaches the non defect region of said photomask. The above is repeated while increasing said first nanomaching tip 's depth until the defect region is at a desired depth.

In an alternative embodiment, another method of repairing or modifying a surface region of a photomask with a first nanomaching tip of a probe affixed to a cantilever arm consists of positioning said first nanomaching tip near a surface of said photomask and removing perimeter material from said surface region using atomic force microscopy (AFM) while moving said first nanomaching tip in a differing directions around said surface region to form a perimeter channel. The tip is moved to a first nanometre offset value from a first side of perimeter channel and material is removed from said surface region using AFM while moving said first nanomaching tip parallel to a first side of perimeter channel. The tip is them moved again a second nanometre offset value distal from said first side of perimeter channel and the above is repeated until first probe reaches an opposite perimeter channel. The tip is then moved a third nanometre offset value offset from a side adjacent to first side of perimeter channel and more material is removed from said surface region using AFM while moving said first nanomaching tip parallel to said side adjacent to first side of perimeter channel. The tip is moved again another nanometre offset value offset from said side adjacent of perimeter channel and the above is repeated until said first probe reaches the opposite adjacent perimeter channel.

There has thus been outlined, rather broadly, certain embodiments of the invention in order that the detailed description thereof herein may be better understood, and in order that the present contribution to the art may be better appreciated. There are, of course, additional embodiments of the invention that will be described below and which will form the subject matter of the claims appended hereto.

In this respect, before explaining at least one embodiment of the invention in detail, it is to be understood that the invention is not limited in its application to the details of construction and to the arrangements of the components set forth in the following description or illustrated in the drawings. The invention is capable of embodiments in addition to those described and of being practiced and carried out in various ways. Also, it is to be understood that the phraseology and terminology employed herein, as well as the abstract, are for the purpose of description and should not be regarded as limiting.

As such, those skilled in the art will appreciate that the conception upon which this disclosure is based may readily be utilized as a basis for the designing of other structures, methods and systems for carrying out the several purposes of the present invention. It is important, therefore, that the claims be regarded as including such equivalent constructions insofar as they do not depart from the spirit and scope of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

In order that the invention may more readily be understood, reference is directed to the accompanying drawings.

FIG. 1 is an illustration of a nanomaching tool attached to an atomic force microscope illustrating the stress placed upon a nanomachining tip.

FIG. 2 is an illustration of a nanomaching tool attached to an atomic force microscope after making a series of parallel material extractions on a photomask.

FIG. 3 is an illustration of the nanomaching tool attached to an atomic force microscope after making a series of orthogonal material extractions on the photomask.

FIG. 4 is an illustration of the photomask after an additional series of parallel orthogonal material extractions

FIG. 5 is an illustration of the photomask after the AFM has removed material.

FIG. 6 is an illustration of the nanomaching probe after making a first permitter pass.

FIG. 7 is an illustration of the nanomaching probe after making a second permitter pass.

FIG. 8 is an illustration of the nanomaching probe after making a third permitter pass.

FIG. 9 is an illustration of the nanomaching probe after making a forth permitter pass.

DETAILED DESCRIPTION

Detailed embodiments of the present invention are disclosed herein; however, it is to be understood that the disclosed embodiments are merely illustrative of the invention that may be embodied in various forms. In addition, each of the examples given in connection with the various embodiments of the invention are intended to be illustrative, and not restrictive. Further, the figures are not necessarily to scale, some features may be exaggerated to show details of particular components. Therefore, specific structural and functional details disclosed herein are not to be interpreted as limiting, but merely as a representative basis for teaching one skilled in the art to variously employ the present invention.

FIG. 2 illustrates an example of the method of a first embodiment of the present invention in which a photomask 10 is in need of optical correction within a desired work area or defect region 13. A cantilever arm 12 of an atomic force microscope platform holds a first nanomaching tip 14. A first pass of individual parallel passes (cuts) 15-19 are sliced through the work area or defect region 13 at depths less than 30 nanometres depending on the material of the photomask 10 and the characteristics of the first nanomaching tip 14.

The process begins by positioning the nanomaching tip 14 at the beginning of a first pass 15. The nanomaching tip 14 is lifted and positioned at the next parallel position. This technique minimizes progressive tip deflection from material compression and debris pile-up which may accumulate as the material extraction process is carried out. After pass 15 is carried out, the nanomaching tip 14 is lifted and repositioned and pass 16 is performed. After pass 16, the nanomaching tip 14 is lifted and pass 17 is performed. The iterative process is continued until all the parallel passes 15 through 19 are complete.

The next set of passes 20-24 as illustrated in FIG. 3 are similar to the first, except they are orthogonal to the parallel passes 20-24. For example, pass 20 is carried out, the nanomaching tip 14 is lifted and repositioned and pass 21 is performed. After pass 21, the nanomaching tip 14 is lifted and pass 22 is performed. The process of incrementing the index to the next pass is continued until all the parallel passes 20 through 24 are complete.

The alternating sequence of orthogonal passes can be repeated until a desired depth of the work area or defect region 13 is achieved leaving an orthogonal series of isolated channels defining the boundaries of the repair while leaving a grid of small isolated pillars 30 on the surface of the work area or defect region 13. The small isolated pillars 30, as shown in FIG. 4, can be made smooth with the nanomaching tip 14 or with an additional tip or tips, depending on the precision required and a finished repair is shown in FIG. 5. The additional tips, with a differing aspect ratios or differencing composite material can be used to “smooth” out or polish the bottom of the desired work area or defect region 13.

In an alternative embodiment, a next series of passes would be performed, but the nanomaching tip 14 would be offset from its first set of passes. For example, the nanomaching tip 14 is directed to perform a series of passes that would traverse through the center of the pillars 30, paralleling the channels “cut” from a previous pass, permitting a finer control of the debris removal.

In yet another embodiment, one or more sets of orthogonal passes of the nanomaching tip 14 is performed, but at an ever increasing depths until a desired depth is achieved. This embodiment removes the material in discrete depth levels. The nanomaching tip 14 can also be changed to a different nanomaching tip with differing aspect ratios or physical characteristics to assist with the removal of the undesired material.

In another embodiment, the perimeter of the work area or defect region 13 is first “carved out” before the orthogonal crosshatching of a previous embodiment is performed. An advantage of this embodiment is that is helps preserves the desired shape's fidelity. This is achieved by minimizing the amount of material displaced in producing the pillars (orthogonal cuts) and yet still defines the repair area for the subsequent debris removal. The present embodiment also minimizes the potential of accumulating repair debris which would deflect the nanomaching tip 14 from accurately defining the repair shape. The perimeter could be used as a repository for any removed material, thus helping keep the nanomaching tip 14 clean of any debris which could cause drag or jumping ahead deflections which could impede the nanomaching tip's ability to traverse in a straight cutting vector. The perimeter also greatly reduces or eliminates lateral deflection when making parallel cuts, because it helps prevent drag or jumping ahead deflections when performing the cut's in the parallel direction. Additional subsequent cuts would be preferentially deflected into the prior seed cuts resulting in a self-aligning repair process.

For example, referring to FIGS. 6-9, a first pass 42 of the nanomaching tip 14 defines a first portion of perimeter of the work area or defect region 13. A second pass 44, a third cut 46 and a fourth cut 48 complete the scribing of the perimeter. The perimeter cutting process may be repeated if deeper work area is preferred, usually to within 0-20 nanometers of a desired depth. The steps of the first embodiment may be performed to remove the material from the work area or defect region 13. In a preferred embodiment, the user may lift the nanomaching tip 14 between each perimeter cut. But, in an alternative embodiment, the user could practice the invention without lifting the nanomaching tip 14 between each perimeter cut.

In another embodiment, the perimeter cuts can be at differing offsets. The user could progressively increase the depth of the cuts at each as the nanomaching tip 14 works it way around the perimeter. The increase of the depth's cut could be increased after each complete perimeter pass or it could be increased after each cut before the direction is changed or it could be gradually increased throughout the entire perimeter cutting.

For other embodiments the sequence and directions of the cuts can be controlled to enhance the shape of the repair or by the characteristics of the material being nanomachined. For example, indents start at the worst-resolved corners with the separated cuts moving towards the best-resolved corners.

Finally, it is to be understood that various alterations, modifications and/or additions may be introduced into the constructions and arrangements of parts previously described without departing from the spirit or ambit of the invention.

The many features and advantages of the invention are apparent from the detailed specification, and thus, it is intended by the appended claims to cover all such features and advantages of the invention which fall within the true spirit and scope of the invention. Further, since numerous modifications and variations will readily occur to those skilled in the art, it is not desired to limit the invention to the exact construction and operation illustrated and described, and accordingly, all suitable modifications and equivalents may be resorted to, falling within the scope of the invention.

Claims

1. A method of repairing a defect region of a photomask with a nanomaching tip of a probe affixed to a cantilever arm, said method comprising the steps of: (A) positioning said first nanomaching tip inwardly by a first offset from non defect region into said defect region proximate to said surface region;(B) removing material from said surface region using AFM by moving said first nanomaching tip in a first direction;(C) positioning said first nanomaching tip by a second offset distance from non defect region proximate to said surface region and removing material from said surface region using AFM by moving said first nanomaching tip in the opposite direction of the previous material removal direction;(D) repeating step C while alternating first direction until said first probe reaches the non defect region of said photomask;(E) removing material from said surface region using AFM by moving said first nanomaching tip in a second direction;(F) positioning said first nanomaching tip by a third offset distance from non defect region proximate to said surface region and removing material from said surface region using AFM by moving said first nanomaching tip in the opposite direction of the previous material removal direction;(G) repeating step F while alternating said second direction until said first probe reaches the non defect region of said photomask;(H) repeating steps C through F while increasing said first nanomaching tip 's depth until the defect region is at a desired depth.

2. The method of claim 1, wherein the first direction and the second direction are orthogonal.

3. The method of claim 1, wherein first offset distance and the second offset distance is selected by said first nanomaching tip characteristics.

4. The method of claim 1, wherein first offset distance selected from the range of 1 nanometres to 20 nanometres.

5. The method of claim 1, wherein second offset distance selected from the range of 1 nanometres to 20 nanometres.

6. The method of claim 1, wherein third offset distance selected from the range of 1 nanometres to 10 nanometres.

7. The method of claim 1, wherein said first nanomaching tip is replaced with a second tip with differing characteristics.

8. The method of claim 5, wherein said second tip is replaced with a third tip with differing characteristics.

9. The method of claim 1, wherein at step G said second offset distance is one-half of the previous value.

10. The method of claim 1, wherein at step G said third offset distance is one-half of the previous value.

11. A method of repairing or modifying a surface region of a photomask with a first nanomaching tip of a probe affixed to a cantilever arm, said method comprising the steps of: (A) positioning said first nanomaching tip near a surface of said photomask;(B) removing perimeter material from said surface region using atomic force microscopy (AFM) while moving said first nanomaching tip in a differing directions around said surface region to form a perimeter channel;(C) moving said first nanomaching tip approximately 2-10 nanometres offset from a first side of perimeter channel;(D) removing material from said surface region using AFM while moving sad first nanomaching tip parallel to a first side of perimeter channel;(E) moving said first nanomaching tip another approximate 2 to 10 nanometres distance from said first side of perimeter channel;(F) repeating steps D and E until said first probe reaches an opposite perimeter channel;(G) moving said first nanomaching tip approximately 2 to 10 nanometres offset from a side adjacent to first side of perimeter channel;(H) removing material from said surface region using AFM while moving said first nanomaching tip parallel to said side adjacent to first side of perimeter channel;(I) moving said first nanomaching tip another approximate 2 to 10 nanometres offset from said side adjacent of perimeter channel; and(J) repeating steps H and I until said first probe reaches the opposite adjacent perimeter channel.

12. The method of claim 1, wherein step B is repeated until the depth of the perimeter is within 2 to 30 nanometres of a final depth;

13. The method of claim 1, wherein steps C through J are repeated until the depth of the surface region is within 2 to 30 nanometres of the final depth;

14. The method of claim 1, wherein the steps of C through J are repeated with the offsets in steps H and J are in the 2 to 10 nanometre range.

15. The method of claim 4, wherein the steps of C through J are repeated until the depth of the surface region is at the final depth

16. The method of claim 4, wherein the steps of C through J are repeated with a second tip until the depth of the surface region is at the final depth