System and method for adjusting trip points within a storage device

Abstract

The embodiments described herein include a method and device for adjusting trip points within a storage device. The method includes: obtaining one or more configuration parameters; and based on the one or more configuration parameters, determining a trip voltage. The method also includes comparing the trip voltage with an input voltage. The method further includes triggering a power fail condition in accordance with a determination that the input voltage is less than the trip voltage.

Description

TECHNICAL FIELD

The disclosed embodiments relate generally to memory systems, and in particular, to adjusting trip points in a storage device.

BACKGROUND

Semiconductor memory devices, including flash memory, typically utilize memory cells to store data as an electrical value, such as an electrical charge or voltage. A flash memory cell, for example, includes a single transistor with a floating gate that is used to store a charge representative of a data value. Flash memory is a non-volatile data storage device that can be electrically erased and reprogrammed. More generally, non-volatile memory (e.g., flash memory, as well as other types of non-volatile memory implemented using any of a variety of technologies) retains stored information even when not powered, as opposed to volatile memory, which requires power to maintain the stored information.

SUMMARY

Various implementations of systems, methods and devices within the scope of the appended claims each have several aspects, no single one of which is solely responsible for the attributes described herein. Without limiting the scope of the appended claims, after considering this disclosure, and particularly after considering the section entitled “Detailed Description” one will understand how the aspects of various implementations are used to adjust trip points for triggering a power fail process based on one or more configuration parameters (e.g., input or supply voltage) of a data storage device.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the present disclosure can be understood in greater detail, a more particular description may be had by reference to the features of various implementations, some of which are illustrated in the appended drawings. The appended drawings, however, merely illustrate the more pertinent features of the present disclosure and are therefore not to be considered limiting, for the description may admit to other effective features.

FIG. 1 is a block diagram illustrating an implementation of a data storage system in accordance with some embodiments.

FIG. 2A is a block diagram illustrating an implementation of a supervisory controller in accordance with some embodiments.

FIG. 2B is a block diagram illustrating an implementation of a storage controller in accordance with some embodiments.

FIG. 2C is a block diagram illustrating an implementation of a non-volatile memory (NVM) controller in accordance with some embodiments.

FIG. 3 is a block diagram illustrating a portion of a data storage device in accordance with some embodiments.

FIG. 4A is a block diagram illustrating an implementation of a portion of voltage monitoring circuitry in accordance with some embodiments.

FIG. 4B is a block diagram illustrating an implementation of a portion of voltage monitoring circuitry in accordance with some embodiments.

FIG. 5 is a block diagram illustrating an implementation of a data hardening module in accordance with some embodiments.

FIGS. 6A-6C illustrate a flowchart representation of a method of adjusting trip points in a data storage device in accordance with some embodiments.

In accordance with common practice the various features illustrated in the drawings may not be drawn to scale. Accordingly, the dimensions of the various features may be arbitrarily expanded or reduced for clarity. In addition, some of the drawings may not depict all of the components of a given system, method or device. Finally, like reference numerals may be used to denote like features throughout the specification and figures.

DETAILED DESCRIPTION

The various implementations described herein include systems, methods and/or devices for adjusting trip points that trigger a power fail process based on one or more configuration parameters of a storage device. For example, in accordance with some embodiments, in a storage device configured to be compatible with an interface standard (e.g., DDR3) that allows a host system to provide one of a plurality of supply voltages to the storage device, the storage device is configured to adjust trip points that trigger a power fail process in accordance with the supply voltage(s) provided by the host system.

More specifically, some embodiments include a method of adjusting trip points in a storage device. In some embodiments, the method is performed within a storage device operatively coupled with a host system. The method includes: obtaining one or more configuration parameters; and based on the one or more configuration parameters, determining a trip voltage. The method also includes comparing the trip voltage with an input voltage. The method further includes triggering a power fail condition in accordance with a determination that the input voltage is less than the trip voltage (or, in some circumstances, greater than the trip voltage).

Some embodiments include a storage device comprising: a host interface configured to couple the storage device with a host system; a supervisory controller with one or more processors and memory; a power fail module for detecting a power fail condition; and a plurality of controller for managing one or more non-volatile memory devices. The storage device is configured to perform the operations of any of the methods described herein.

Some embodiments include a storage device comprising: a host interface configured to couple the storage device with a host system; and means for performing the operations of any of the methods described herein.

Some embodiments include a non-transitory computer readable storage medium, storing one or more programs for execution by one or more processors of a storage device, the one or more programs including instructions for performing the operations any of the methods described herein.

Numerous details are described herein in order to provide a thorough understanding of the example implementations illustrated in the accompanying drawings. However, some embodiments may be practiced without many of the specific details, and the scope of the claims is only limited by those features and aspects specifically recited in the claims. Furthermore, well-known methods, components, and circuits have not been described in exhaustive detail so as not to unnecessarily obscure more pertinent aspects of the implementations described herein.

FIG. 1 is a block diagram illustrating an implementation of data storage system 100 in accordance with some embodiments. While some example features are illustrated, various other features have not been illustrated for the sake of brevity and so as not to obscure more pertinent aspects of the example implementations disclosed herein. To that end, as a non-limiting example, data storage system 100 includes storage device 120, which includes host interface 122, supervisory controller 124, power fail module 126, power control 127, storage controller 128 (sometimes called a memory controller), one or more non-volatile memory (NVM) controllers 130 (e.g., NVM controller 130-1 through NVM controller 130-m), and non-volatile memory (NVM) (e.g., one or more NVM device(s) 140, 142 such as one or more flash memory devices), and is used in conjunction with computer system 110.

Computer system 110 is coupled with storage device 120 through data connections 101. However, in some embodiments, computer system 110 includes storage device 120 as a component and/or sub-system. Computer system 110 may be any suitable computing device, such as a personal computer, a workstation, a computer server, or any other computing device. Computer system 110 is sometimes called a host or host system. In some embodiments, computer system 110 includes one or more processors, one or more types of memory, optionally includes a display and/or other user interface components such as a keyboard, a touch screen display, a mouse, a track-pad, a digital camera and/or any number of supplemental devices to add functionality. Further, in some embodiments, computer system 110 sends one or more host commands (e.g., read commands and/or write commands) on control line 111 to storage device 120. In some embodiments, computer system 110 is a server system, such as a server system in a data center, and does not have a display and other user interface components.

In some embodiments, storage device 120 includes a single NVM device while in other implementations storage device 120 includes a plurality of NVM devices. In some embodiments, NVM devices 140, 142 include NAND-type flash memory or NOR-type flash memory. Further, in some embodiments, NVM controller 130 is a solid-state drive (SSD) controller. However, one or more other types of storage media may be included in accordance with aspects of a wide variety of implementations. In some embodiments, storage device 120 is or includes a dual in-line memory module (DIMM) device. In some embodiments, storage device 120 is compatible with a DIMM memory slot. For example, storage device 120 is compatible with a 240-pin DIMM memory slot and is compatible with signaling in accordance with a DDR3 interface specification.

In some embodiments, storage device 120 includes NVM devices 140, 142 (e.g., NVM devices 140-1 through 140-n and NVM devices 142-1 through 142-k) and NVM controllers 130 (e.g., NVM controllers 130-1 through 130-m). In some embodiments, each NVM controller of NVM controllers 130 include one or more processing units (sometimes called CPUs or processors) configured to execute instructions in one or more programs (e.g., in NVM controllers 130). In some embodiments, the one or more processors are shared by one or more components within, and in some cases, beyond the function of NVM controllers 130. NVM devices 140, 142 are coupled with NVM controllers 130 through connections that typically convey commands in addition to data, and, optionally, convey metadata, error correction information and/or other information in addition to data values to be stored in NVM devices 140, 142 and data values read from NVM devices 140, 142. For example, NVM devices 140, 142 can be configured for enterprise storage suitable for applications such as cloud computing, or for caching data stored (or to be stored) in secondary storage, such as hard disk drives. Additionally and/or alternatively, flash memory (e.g., NVM devices 140, 142) can also be configured for relatively smaller-scale applications such as personal flash drives or hard-disk replacements for personal, laptop and tablet computers. Although flash memory devices and flash controllers are used as an example here, in some embodiments storage device 120 includes other non-volatile memory device(s) and corresponding non-volatile storage controller(s).

In some embodiments, storage device 120 also includes host interface 122, supervisory controller 124, power fail module 126, power control 127, and storage controller 128. Storage device 120 may include various additional features that have not been illustrated for the sake of brevity and so as not to obscure more pertinent features of the example implementations disclosed herein, and a different arrangement of features may be possible. Host interface 122 provides an interface to computer system 110 through data connections 101.

Supervisory controller 124 is coupled with host interface 122, power fail module 126, power control 127, storage controller 128, and NVM controllers 130 (connection not shown) in order to coordinate the operation of these components, including supervising and controlling functions such as power up, power down, data hardening, charging energy storage device(s), data logging, and other aspects of managing functions on storage device 120. Supervisory controller 124 is coupled with host interface 122 via serial presence detect (SPD) bus 154 and receives supply voltage line V_SPD 156 from the host interface 122. V_SPD 156 is a standardized voltage (e.g., typically 3.3 V). Serial presence detect (SPD) refers to a standardized way to automatically access information about a computer memory module (e.g., storage device 120). In some embodiments, if the memory module has a failure, the failure can be communicated with a host system (e.g., computer system 110) via SPD bus 154.

Power fail module 126 is coupled with host interface 122, supervisory controller 124, and power control 127. Power fail module 126 is configured to monitor one or more input voltages (e.g., V_dd 152 and, optionally, V_SPD 156) provided to storage device 120 by a host system (e.g., computer system 110). In response to detecting a power fail condition (e.g., an under or over voltage event) as to an input voltage, power fail module 126 is configured to provide a PFAIL signal to supervisory controller 124 and, in some circumstances, discharge an energy storage device to provide power to storage controller 128 and NVM controllers 130. For a more detailed description of power fail module 126, see the description of FIGS. 3-5. In response to receiving the PFAIL signal indicating a power fail condition from power fail module 126, supervisory controller 124 performs one or more operations of a power fail process including, but not limited to, signaling the power fail condition to a plurality of controllers on storage device 120 (e.g., storage controller 128 and NVM controllers 130) via control lines 162.

Power control 127 is coupled with supervisory controller 124, power fail module 126, storage controller 128, and NVM controllers 130 (connection not shown) in order to provide power to these components. In some embodiments, power control 127 includes one or more voltage regulators controlled by supervisory controller 124 via control line 162. Furthermore, in some implementations, power control 127 is configured to remove power from a specified NVM controller 130 in response to a command from supervisory controller 124 via control line 162.

Storage controller 128 is coupled with host interface 122, supervisory controller 124, power control 127, and NVM controllers 130. In some embodiments, during a write operation, storage controller 128 receives data via data bus 158 from computer system 110 through host interface 122 and during a read operation, storage controller 128 sends data to computer system 110 through host interface 122 via data bus 158. Further, host interface 122 provides additional data, signals, voltages, and/or other information needed for communication between storage controller 128 and computer system 110. In some embodiments, storage controller 128 and host interface 122 use a defined interface standard for communication, such as double data rate type three synchronous dynamic random access memory (DDR3). In some embodiments, storage controller 128 and NVM controllers 130 use a defined interface standard for communication, such as serial advance technology attachment (SATA). In some other implementations, the device interface used by storage controller 128 to communicate with NVM controllers 130 is SAS (serial attached SCSI), or other storage interface. In some embodiments, storage controller 128 maps DDR interface commands from the host system (e.g., computer system 1120) to SATA or SAS interface commands for the plurality of controllers (e.g., storage controller 128 and NVM controllers 130).

FIG. 2A is a block diagram illustrating an implementation of supervisory controller 124 in accordance with some embodiments. Supervisory controller 124 includes one or more processors 202 (sometimes called CPUs or processing units) for executing modules, programs and/or instructions stored in memory 206 and thereby performing processing operations, serial presence detect (SPD) module 205 (e.g., non-volatile memory) storing information related to storage device 120 (e.g., a serial number, memory type, supported communication protocol, etc.), memory 206, optionally a digital-to-analog converter (DAC) 204 for converting digital values to an analog signal (e.g., a portion of an integrated or partially integrated DAC/ADC), and one or more communication buses 208 for interconnecting these components. Communication buses 208, optionally, include circuitry (sometimes called a chipset) that interconnects and controls communications between system components. Supervisory controller 124 is coupled with host interface 122, power fail module 126, power control 127, storage controller 128, and NVM controllers 130 (e.g., NVM controllers 130-1 through 130-m) by communication buses 208.

Memory 206 includes high-speed random access memory, such as DRAM, SRAM, DDR RAM or other random access solid state memory devices, and may include non-volatile memory, such as one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid state storage devices. Memory 206, optionally, includes one or more storage devices remotely located from processor(s) 202. Memory 206, or alternately the non-volatile memory device(s) within memory 206, comprises a non-transitory computer readable storage medium. In some embodiments, memory 206, or the computer readable storage medium of memory 206, stores the following programs, modules, and data structures, or a subset or superset thereof:

• • obtaining module 210 for obtaining one or more configuration parameters, including:
    • optionally, a receiving module 212 for receiving one or more configuration parameters from computer system 110; and
    • sampling module 214 for sampling V_dd 152 (connection not shown) to determine one or more configuration parameters (e.g., a default input voltage (V_dd) supplied by computer system 110);
  • determination module 216 for determining a trip voltage (sometimes called a “trip point”) based on the one or more configuration parameters, optionally including:
    • selection module 218 for selecting a trip voltage from trip voltage table 220 based on the one or more configuration parameters, where trip voltage table 220 includes a plurality of predefined trip voltages;
  • optionally, a modification module 222 for modifying one or more timing parameters 224 based on the one or more configuration parameters and for modifying one or more trip voltages in trip voltage table 220 in response to a request from computer system 110;
  • power fail module 226 for performing one or more operations of a power fail process in response to detecting (or the triggering of) a power fail condition, including:
    • latching module 228 for latching, unlatching, or forcing the power fail condition (e.g., by controlling latching mechanism 412, FIG. 4A);
    • power switch module 230 for controlling V_switched 160 (FIGS. 1 and 5);
    • discharge module 232 for discharging an energy storage device 510 (e.g., one or more hold-up capacitors) (see FIG. 5);
    • signal module 234 for signaling a power fail condition to a plurality of controllers on storage device 120 (e.g., storage controller 128 and NVM controllers 130, FIG. 1);
    • power removal module 236 for removing power from the plurality of controllers on storage device 120 (e.g., by controlling power control 127, FIG. 1); and
    • reset module 238 for resetting one or more of the plurality of controllers on storage device 120 (e.g., storage controller 128 and NVM controllers 130, FIG. 1);
  • control module 240 for coordinating the operations of storage device 120, including supervisory, control, and power fail functions; and
  • non-volatile memory 242 for storing information related to the operations of storage device 120, optionally including:
    • event log 244 for storing the time and occurrence of events (e.g., the occurrence of a power fail condition).

Each of the above identified elements may be stored in one or more of the previously mentioned memory devices, and corresponds to a set of instructions for performing a function described above. The above identified modules or programs (i.e., sets of instructions) need not be implemented as separate software programs, procedures or modules, and thus various subsets of these modules may be combined or otherwise re-arranged in various embodiments. In some embodiments, memory 206 may store a subset of the modules and data structures identified above. Furthermore, memory 206 may store additional modules and data structures not described above. In some embodiments, the programs, modules, and data structures stored in memory 206, or the computer readable storage medium of memory 206, provide instructions for implementing any of the methods described below with reference to FIGS. 6A-6C.

Although FIG. 2A shows supervisory controller 124, FIG. 2A is intended more as a functional description of the various features which may be present in supervisory controller 124 than as a structural schematic of the embodiments described herein. In practice, and as recognized by those of ordinary skill in the art, items shown separately could be combined and some items could be separated.

FIG. 2B is a block diagram illustrating an implementation of a storage controller 128 in accordance with some embodiments. Storage controller 128, typically, includes one or more processors 252 (sometimes called CPUs or processing units) for executing modules, programs and/or instructions stored in memory 256 and thereby performing processing operations, memory 256, and one or more communication buses 258 for interconnecting these components. Communication buses 258, optionally, include circuitry (sometimes called a chipset) that interconnects and controls communications between system components. Storage controller 128 is coupled with host interface 122, supervisory controller 124, power control 127, and NVM controllers 130 (e.g., NVM controllers 130-1 through 130-m) by communication buses 258.

Memory 256 includes high-speed random access memory, such as DRAM, SRAM, DDR RAM or other random access solid state memory devices, and may include non-volatile memory, such as one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid state storage devices. Memory 256, optionally, includes one or more storage devices remotely located from processor(s) 252. Memory 256, or alternately the non-volatile memory device(s) within memory 256, comprises a non-transitory computer readable storage medium. In some embodiments, memory 256, or the computer readable storage medium of memory 256, stores the following programs, modules, and data structures, or a subset or superset thereof:

• • interface module 260 for communicating with other components, such as host interface 122, supervisory controller 124, power control 127, and NVM controllers 130;
  • reset module 262 for resetting storage controller 128; and
  • power fail module 264 for performing a power fail operation in response to a signal of a power fail condition from supervisory controller 124.

In some embodiments, the power fail module 264, optionally, includes a transfer module 266 for transferring data held in volatile memory 268 to non-volatile memory.

Each of the above identified elements may be stored in one or more of the previously mentioned memory devices, and corresponds to a set of instructions for performing a function described above. The above identified modules or programs (i.e., sets of instructions) need not be implemented as separate software programs, procedures or modules, and thus various subsets of these modules may be combined or otherwise re-arranged in various embodiments. In some embodiments, memory 256 may store a subset of the modules and data structures identified above. Furthermore, memory 256 may store additional modules and data structures not described above.

Although FIG. 2B shows storage controller 128, FIG. 2B is intended more as a functional description of the various features which may be present in storage controller 128 than as a structural schematic of the embodiments described herein. In practice, and as recognized by those of ordinary skill in the art, items shown separately could be combined and some items could be separated.

FIG. 2C is a block diagram illustrating an implementation of representative NVM controller 130-1 in accordance with some embodiments. NVM controller 130-1 typically includes one or more processors 272 (sometimes called CPUs or processing units) for executing modules, programs and/or instructions stored in memory 276 and thereby performing processing operations, memory 276, and one or more communication buses 278 for interconnecting these components. Communication buses 278 optionally include circuitry (sometimes called a chipset) that interconnects and controls communications between system components. NVM controller 130-1 is coupled with supervisory controller 124, power control 127, storage controller 128, and NVM devices 140 (e.g., NVM devices 140-1 through 140-n) by communication buses 278.

Memory 276 includes high-speed random access memory, such as DRAM, SRAM, DDR RAM or other random access solid state memory devices, and may include non-volatile memory, such as one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid state storage devices. Memory 276, optionally, includes one or more storage devices remotely located from processor(s) 272. Memory 276, or alternately the non-volatile memory device(s) within memory 276, comprises a non-transitory computer readable storage medium. In some embodiments, memory 276, or the computer readable storage medium of memory 276, stores the following programs, modules, and data structures, or a subset or superset thereof:

• • interface module 280 for communicating with other components, such as supervisory controller 124, power control 127, storage controller 128, and NVM devices 140;
  • reset module 282 for resetting NVM controller 130-1; and
  • power fail module 284 for performing a power fail operation in response to a signal of a power fail condition from supervisory controller 124.

In some embodiments, power fail module 284, optionally, includes a transfer module 286 for transferring data held in volatile memory 288 to non-volatile memory.

Each of the above identified elements may be stored in one or more of the previously mentioned memory devices, and corresponds to a set of instructions for performing a function described above. The above identified modules or programs (i.e., sets of instructions) need not be implemented as separate software programs, procedures or modules, and thus various subsets of these modules may be combined or otherwise re-arranged in various embodiments. In some embodiments, memory 276 may store a subset of the modules and data structures identified above. Furthermore, memory 276 may store additional modules and data structures not described above.

Although FIG. 2C shows NVM controller 130-1, FIG. 2C is intended more as a functional description of the various features which may be present in NVM controller 130-1 than as a structural schematic of the embodiments described herein. In practice, and as recognized by those of ordinary skill in the art, items shown separately could be combined and some items could be separated. Further, although FIG. 2C shows representative NVM controller 130-1, the description of FIG. 2C similarly applies to other NVM controllers (e.g., NVM controllers 130-2 through 130-m) in storage device 120, as shown in FIG. 1.

FIG. 3 is a block diagram illustrating an implementation of a portion of storage device 120 in accordance with some embodiments. While some example features are illustrated, various other features have not been illustrated for the sake of brevity and so as not to obscure more pertinent aspects of the example implementations disclosed herein. To that end, as a non-limiting example, supervisory controller 124 includes one or more processors 202 and DAC 204, and power fail module 126 includes voltage monitoring circuitry 302 and data hardening module 308. In some embodiments, DAC 204 is a component of one or more processors 202. In some embodiments, V_dd 152 is a voltage supplied by the host system (e.g., computer system 110, FIG. 1) and has a target value of 1.5 V or less (e.g., 1.25 V, 1.35 V, or 1.5 V). For example, for a double data rate type three (DDR3) interface specification, the input (or supply) voltage is 1.25 V, 1.35 V or 1.5 V. In some embodiments, V_SPD 156 is a voltage supplied by the host system for a serial presence detect (SPD) functionality and has a target value of 3.3 V.

In some embodiments, voltage monitoring circuitry 302 is configured to detect a power fail condition (e.g., an under or over voltage event) as to an input voltage (e.g., V_dd 152 or V_SPD 156) supplied by a host system (e.g., computer system 110, FIG. 1) and signal the power fail condition to supervisory controller 124. In some embodiments, voltage monitoring circuitry 302 includes V_dd monitoring circuitry 304 configured to detect an under or over voltage event as to V_dd 152 and V_SPD monitoring circuitry 306 configured to detect an under or over voltage event as to V_SPD 156. For a more detailed description of V_dd monitoring circuitry 304, see the description of FIG. 4A. For a more detailed description of V_SPD monitoring circuitry 306, see the description of FIG. 4B.

In some embodiments, data hardening module 308 is configured to interconnect an energy storage device to provide power to storage controller 128 and NVM controllers 130. For a more detailed description of data hardening module 308, see the description of FIG. 5. For further description of data hardening module 308, see U.S. Provisional Patent Application No. 61/887,910 entitled “Power Sequencing and Data Hardening Circuitry Architecture,” which is herein incorporated by reference.

FIG. 4A is a block diagram illustrating an implementation of a portion of voltage monitoring circuitry 302 (V_dd monitoring circuitry 304) in accordance with some embodiments. While some example features are illustrated, various other features have not been illustrated for the sake of brevity and so as not to obscure more pertinent aspects of the example implementations disclosed herein. To that end, as a non-limiting example, V_dd monitoring circuitry 304 includes reference signal conditioning module 402, input signal conditioning module 404, comparator 406, and transistor 408.

In some embodiments, as shown in FIG. 3, the reference signal is DAC output 312 from supervisory controller 124. For example, supervisory controller 124 or a component thereof (e.g., obtaining module 210, FIG. 2A) obtains one or more configuration parameters including an indication of the default value for V_dd (e.g., 1.25 V, 1.35 V, or 1.5 V) that is supplied to storage device 120 by the host system. In this example, supervisory controller 124 or a component thereof (e.g., determination module 216, FIG. 2A) determines a trip voltage for V_dd by selecting one of a plurality of predefined trip voltages from trip voltage table 220 based on the indication of the default value for V_dd (e.g., included in the one or more configuration parameters). DAC 204 converts the digital value for the trip voltage to an analog value, and supervisory controller 124 provides DAC output 312 to V_dd monitoring circuitry 304.

Referring once again to FIG. 4A, in some embodiments reference signal conditioning module 402 is configured to condition DAC output 312 (sometimes called a “reference signal,” “trip voltage,” or “trip point”) prior to a comparison operation with this reference signal. In some embodiments, the conditioning includes one or more of buffering, filtering, scaling, and level shifting DAC output 312 to produce a reference comparison signal 418. In some embodiments, conditioning module 402 is implemented using well-known circuitry components (e.g., unity gain amplifier, low-pass RC filter, voltage divider, etc.), the exact configuration of which depends on the particular conditioning applied to DAC output 312. For example, the conditioning adjusts the trip voltage so that the full range of DAC values map to the practical range of trip voltages. In some embodiments, V_ref 414 is a voltage-supply independent reference voltage supplied by comparator 406 and used by reference signal conditioning module 402 to level shift DAC output 312. For example, DAC output 312 starts as a low value (e.g., 1 V) and is raised to the proper trip voltage (e.g., 1.125 V, 1.215 V, or 1.35 V) by reference signal conditioning module 402.

In some embodiments, input signal conditioning module 404 is configured to condition V_dd 152 (sometimes called an “input signal,” “input voltage,” or “supply voltage”) supplied by the host system prior to a comparison operation with this input signal. In some embodiments, the conditioning includes one or more of buffering, filtering, and scaling V_dd 152 to produce a comparison input signal 416 corresponding to V_dd 152. In some embodiments, input signal conditioning module 404 is implemented using well-known circuitry components (e.g., unity gain amplifier, low-pass RC filter, voltage divider, etc.), the exact configuration of which depends on the particular conditioning applied to the V_dd 152.

In some embodiments, comparator 406 is configured to perform a comparison operation between the conditioned reference signal (e.g., the output of reference signal conditioning module 402) and the conditioned input signal (e.g., the output of input signal conditioning module 404). If the conditioned input signal is less than (or, alternatively, greater than) the conditioned reference signal, comparator 406 is configured to output PFAIL signal 314 to supervisory controller 124 (e.g., logic high). For example, in FIG. 4A, PFAIL signal 314 indicates the occurrence of a power fail condition (e.g., an under or over voltage event) as to V_dd 152. Additionally, comparator 406 is configured to provide hysteresis 410 of the result of the comparison operation for subsequent comparisons (e.g., 3 to 10 mV of feedback). In some embodiments, comparator 406 is also configured to provide V_ref 414 to one or more other components of storage device 120 (e.g., supervisory controller 124 and V_SPD monitoring circuitry 306).

In some embodiments, latching mechanism 412 is configured to latch, unlatch, or force (e.g., simulate) the power fail condition. In some embodiments, when comparator 406 indicates the occurrence of a power fail condition as to V_dd 152, PFAIL signal 314 (e.g., logic high) is provided to latching mechanism 412. PFAIL signal 314 enables transistor 408 (closed state) which shorts the input signal (e.g., a level adjusted and scaled comparison input signal 416 corresponding to V_dd 152) to ground, which latches the power fail condition.

In addition to having a mechanism for latching the power fail condition, in some embodiments, supervisory controller 124 or a component thereof (e.g., latching module 228, FIG. 2A) is configured to unlatch the power fail condition by providing a PFAIL control signal 316 (e.g., logic low) that disables transistor 408 (open state), which unlatches the power fail condition—by allowing the comparison input signal 416 to reach the comparator 406 without being shorted to ground. In some embodiments, supervisory controller 124 or a component thereof (e.g., latching module 228, FIG. 2A) is also configured to force the power fail condition to occur by providing PFAIL control signal 316 (e.g., logic high) that enables transistor 408 (closed state) which shorts the comparison input signal 416 to ground, which forces the comparator 406 to generate PFAIL signal 314. Furthermore, in some implementations, PFAIL control signal 316 is tristated (e.g., put into a high impedance state) by supervisory controller 124 when supervisory controller 124 is neither unlatching the power fail condition nor forcing a power fail condition, which disables transistor 408 unless PFAIL 314 is asserted (e.g., logic high). For further information concerning forcing or simulating the power fail condition, see U.S. Provisional Patent Application No. 61/903,895, filed Nov. 13, 2013, entitled “Simulated Power Failure and Data Hardening Circuitry Architecture,” which is herein incorporated by reference in its entirety.

FIG. 4B is a block diagram illustrating an implementation of a portion of voltage monitoring circuitry 302 (V_SPD monitoring circuitry 306) in accordance with some embodiments. While some example features are illustrated, various other features have not been illustrated for the sake of brevity and so as not to obscure more pertinent aspects of the example implementations disclosed herein. To that end, as a non-limiting example, V_SPD monitoring circuitry 306 includes reference signal conditioning module 422, input signal conditioning module 424, and comparator 426. In some embodiments, the reference signal is V_ref 414 from comparator 406 of V_dd monitoring circuitry 304, as shown in FIG. 4A. For example, V_ref 414 is a voltage-supply independent reference voltage (e.g., a predetermined voltage such as 1.23 V). In some embodiments, the input signal is V_SPD 156 supplied by the host system (e.g., with a target voltage of 3.3V).

In some embodiments, reference signal conditioning module 422 is configured to condition V_ref 414 (sometimes called a “reference signal,” “trip voltage,” or “trip point”) prior to a comparison operation with this reference signal. In some embodiments, the conditioning includes one or more of buffering and filtering V_ref 414 with a plurality of well-known circuitry components (e.g., unity gain amplifier, low-pass RC filter, etc.) to produce a conditioned V_ref comparison signal 430. In some embodiments, input signal conditioning module 424 is configured to condition V_SPD 156 (sometimes called an “input signal,” “input voltage,” or “supply voltage”) supplied by the host system prior to a comparison operation with this input signal. In some embodiments, the conditioning includes one or more of buffering, filtering, and scaling V_SPD 156 with a plurality of well-known circuitry components (e.g., unity gain amplifier, low-pass RC filter, voltage divider, etc.) to produce a conditioned V_SPD comparison signal 432. For example, if V_ref 414 is 1.23 V and the target voltage for V_SPD 156 is 3.3 V, input signal conditioning module 424 includes a low-pass RC filter to filter out any ripples or glitches in V_SPD 156 and, also, a voltage divider to scale down V_SPD 156 (e.g., by approximately 73% or a factor of 2.7).

In some embodiments, comparator 426 is configured to perform a comparison operation between the conditioned reference signal 430 (e.g., the output of reference signal conditioning module 422) and the conditioned input signal 432 (e.g., the output of input signal conditioning module 424). If the conditioned input signal 432 is less than (or, alternatively, greater than) the conditioned reference signal 430, comparator 426 is configured to output PFAIL signal 314 to supervisory controller 124 (e.g., logic high). For example, in FIG. 4B, PFAIL signal 314 indicates the occurrence of a power fail condition (e.g., an under or over voltage event) as to V_SPD 156. Additionally, comparator 426 is configured to provide hysteresis 428 of the result of the comparison operation for subsequent comparisons.

FIG. 5 is a block diagram illustrating an implementation of data hardening module 308 in accordance with some embodiments. While some example features are illustrated, various other features have not been illustrated for the sake of brevity and so as not to obscure more pertinent aspects of the example implementations disclosed herein. To that end, as a non-limiting example, data hardening module 308 includes transistors 502 and 504, boost circuitry 506, energy storage device 510, keeper circuitry 512, and logic block 514.

In some embodiments, V_holdup 508 is a boosted voltage, higher than V_dd 152, and has a target value of 5.7 V. In some embodiments, V_holdup 508 is used to charge an energy storage device 510 (e.g., one or more hold-up capacitors). Further, in some embodiments, only one of transistors 502, 504 is enabled at any one time. In some embodiments, data hardening circuit 308's energy storage device 510 stores, immediately prior to a power fail condition being detected, at least approximately 30 to 70 mJ of energy per NVM controller 130 in storage device 120.

In some embodiments, supervisory controller 124 or a component thereof (e.g., processor 202) monitors and manages the functionality of data hardening module 308. For example, in response to receiving PFAIL signal 314 from voltage monitoring circuitry 302 indicating the power fail condition, supervisory controller 124 or a component thereof (e.g., processor 202) is configured to perform one or more operations of a power fail process including controlling transistors 502 and 504 so that V_switched 160 is the voltage from energy storage device 510, and energy storage device 510 is used (sometimes said to be “discharged”) to provide power to storage device 120.

In some embodiments, during regular operation of storage device 120, V_dd 152 is used to supply power to storage device 120. However, during the power fail process, energy storage device 510 is used to provide power to storage device 120. In some embodiments, supervisory controller 124 or a component thereof (e.g., processor 202) controls transistors 502 and 504 via control lines 318 to control V_switched 160 to be voltage from V_dd 152 (e.g., during regular operation) or voltage from energy storage device 510 (e.g., during the power fail process). For example, during regular operation of storage device 120, transistor 502 is turned on (e.g., to complete the connection between V_dd 152 and V_switched 160) and transistor 504 is turned off (e.g., to disable the connection between energy storage device 510 and V_switched 160) so that V_dd 152 is used to supply power to storage device 120. However, during the power fail process, transistor 502 is turned off (e.g., to disable the connection between V_dd 152 and V_switched 160) and transistor 504 is turned on (e.g., to enable the connection between energy storage device 510 and V_switched 160) so that energy storage device 510 is used to provide power to storage device 120. Although a single energy storage device 510 is shown in FIG. 5, any energy storage device, including one or more capacitors, one or more inductors, or one or more other passive elements that store energy, may be used to store energy to be used during the power fail process.

In some embodiments, energy storage device 510 is charged using V_holdup 508, a voltage higher than V_dd 152. In some embodiments, V_dd 152 is boosted up to V_holdup 508 using boost circuitry 506 (e.g., 1.35 V or 1.5 V is boosted up to 5.7 V). In some embodiments, boost circuitry 506 is controlled and enabled by supervisory controller 124 (e.g., via processor 202).

Further, in some embodiments, V_switched 160 is used as an input to keeper circuitry 512, which along with V_SPD 156 provides power to processor 202. During the power fail process, V_switched 160 is provided via keeper circuitry 512 to processor 202 so as to provide power to processor 202. In some embodiments, V_SPD 156 provides power to keeper circuitry 512. In some embodiments, logic block 514 (e.g., OR or XOR) determines which of keeper circuitry 512 or V_SPD 156 provides power to supervisory controller 124 (e.g., processor 202).

Furthermore, in some embodiments, during a power up sequence, V_SPD 156 is provided to storage device 120 before V_dd 152 is provided to storage device 120. This allows devices in storage device 120 (e.g., supervisory controller 124 and, in turn, processor 202) to operate before main power V_dd 152 is provided to storage device 120. In some embodiments, supervisory controller 124 or a component thereof (e.g., processor 202) includes one or more connections 162 used to monitor and control other functions within storage device 120.

FIGS. 6A-6C illustrate a flowchart representation of a method 600 of adjusting trip points (e.g., a trip voltage that triggers a power fail process) in a data storage device in accordance with some embodiments. At least in some embodiments, method 600 is performed by a storage device (e.g., storage device 120, FIG. 1) or one or more components of the storage device (e.g., supervisory controller 124, power fail module 126, storage controller 128, and/or NVM controllers 130, FIG. 1), where the storage device is operatively coupled with a host system (e.g., computer system 110, FIG. 1). In some embodiments, method 600 is governed by instructions that are stored in a non-transitory computer readable storage medium and that are executed by one or more processors of a device, such as the one or more processors 202 of supervisory controller 124, the one or more processors 252 of storage controller 128, and/or the one or more processors 272 of NVM controllers 130, as shown in FIGS. 2A-2C.

A storage device (e.g., storage device 120, FIG. 1) obtains (602) one or more configuration parameters. In some embodiments, supervisory controller 124 or a component thereof (e.g., obtaining module 210, FIG. 2A) is configured to obtain one or more configuration parameters associated with storage device 120.

In some embodiments, the one or more configuration parameters include (604) an indication of a default input voltage and configuration information of the storage device. For example, the one or more configuration parameters include an indication of the default input voltage (e.g., V_dd) supplied by the host system (e.g., computer system 110, FIG. 1) to storage device 120 or voltage class of storage device 120 (e.g., 1.25 V, 1.35 V, or 1.5 V) and information associated with the current configuration of storage device 120.

In some embodiments, information identifying the default input voltage is obtained (606) from the host system. In some embodiments, supervisory controller 124 or a component thereof (e.g., receiving module 212, FIG. 2A) is configured to receive an indication of the default input (or supply) voltage (e.g., V_dd) from the host system (e.g., computer system 110, FIG. 1). For example, receiving module 212 receives an indication of the default input voltage via SPD Bus 154 from the host system.

In some embodiments, the storage device samples (608) the input voltage to determine the default input voltage. In some embodiments, supervisory controller 124 or a component thereof (e.g., sampling module 214, FIG. 2A) is configured to sample the input voltage (e.g., V_dd) to determine the default input voltage. For example, sampling module 214 samples V_dd upon power-on and/or restart of storage device 120 to determine the default input voltage. In another example, sampling module 214 determines the default input voltage by averaging a plurality of sample measurements of V_dd.

In some embodiments, the storage device modifies (610) one or more timing parameters associated with a communication bus that operatively couples the storage device and the host system based on the one or more configuration parameters. In some embodiments, supervisory controller 124 or a component thereof (e.g., modification module 222, FIG. 2A) is configured to modify one or more timing parameters 224 stored in non-volatile memory 242 based on the one or more configuration parameters. For example, modification module 222 modifies skew and timing parameters associated with the communication bus (e.g., DDR3) that operatively couples storage device 120 and the host system (e.g., computer system 110, FIG. 1) based on the default input voltage (e.g., V_dd) provided to storage device 120 or voltage class of storage device 120 (e.g., 1.25 V, 1.35 V, or 1.5 V).

The storage device determines (612) a trip voltage based on the one or more configuration parameters. In some embodiments, supervisory controller 124 or a component thereof (e.g., determination module 216, FIG. 2A) is configured to determine a trip voltage based on the one or more configuration parameters. For example, determination module 216 determines the trip voltage based on the default input voltage (e.g., V_dd) provided to storage device 120 or voltage class of storage device 120 (e.g., 1.25 V, 1.35 V, or 1.5 V). In some embodiments, the trip voltage varies depending on the target value of the voltage. For example, if the target value of the input voltage is 1.5 V, the trip voltage may be 1.5 V minus 5 percent (i.e., 1.425 V) or minus 10 percent (i.e., 1.35 V).

In some embodiments, determining the trip voltage includes selecting (614) one of a plurality of stored predefined trip voltages based on the one or more configuration parameters. In some embodiments, supervisory controller or a component thereof (e.g., selection module 218, FIG. 2A) is configured to select a trip voltage from a plurality of predefined trip voltages stored in trip voltage table 220 based on the one or more configuration parameters. In some embodiments, trip voltage table 220 includes a predefined trip voltage for each of a plurality potential default input voltages supplied by a host system or voltage classes of storage device 120 (e.g., 1.25 V, 1.35 V, or 1.5 V). For example, if the one or more configuration parameters indicate that the default input voltage (e.g., V_dd) is 1.5 V, selection module 218 selects a trip voltage from trip voltage table 220 that corresponds to a default input voltage of 1.5 V.

In some embodiments, prior to the comparing, the storage device conditions (616) the trip voltage by buffering the trip voltage and, after the buffering, level shifting and scaling the trip voltage. In some embodiments, after determining the trip voltage, an analog reference signal (e.g., DAC output 312, FIGS. 3 and 4A) corresponding to the determined trip voltage is generated by supervisory controller 124 or a component thereof (e.g., DAC 204, FIGS. 2A and 3) and input to power fail module 126 or a component thereof (e.g., V_dd monitoring circuitry 304, FIG. 4A). Prior to comparing the reference signal (e.g., DAC output 312, FIGS. 3 and 4A) with an input signal (e.g., V_dd 152), reference signal conditioning module 402 is configured to condition the reference signal. In some embodiments, the conditioning includes one or more of buffering, filtering, scaling, and level shifting to adjust the trip voltage so that the full range of DAC values map to the practical range of voltage trip points. For example (circuit details not shown in Figures), first, a unity gain operation amplifier buffers the reference signal (e.g., DAC output 312) to stabilize the impedance; second, a filter filters noise out of the reference signal; third, the reference signal is scaled; and fourth, the reference signal is level shifted by utilizing a voltage-supply independent voltage source (e.g., V_ref 414).

In some embodiments, prior to comparing, the storage device conditions (618) the input voltage (e.g., V_dd 152 or V_SPD 156) by scaling the input voltage and filtering the input voltage. Prior to comparing the reference signal (e.g., DAC output 312 or V_ref 414) with the input signal (e.g., V_dd 152 or V_SPD 156), power fail module 126 or a component thereof conditions the input signal by scaling and filtering the input signal. For example, in FIG. 4A, V_dd 152 (e.g., the input signal) is conditioned by input signal conditioning module 404. In this example, V_dd 152 is scaled by voltage divider circuitry and noise is filtered out of V_dd 152 with a low-pass (e.g., RC) filter (circuit details not shown in Figures). In another example, in FIG. 4B, V_SPD 156 (e.g., the input signal) is conditioned by input signal conditioning module 424. In this example, V_SPD 156 is scaled down to the value of V_ref 414 and noise is filtered out of V_SPD 156 with a low-pass (e.g., RC) filter.

The storage device compares (620) the trip voltage to an input voltage. For example, in FIG. 4A, comparator 306 performs a comparison operation between the conditioned reference signal (e.g., the output of reference signal conditioning module 402) and the conditioned input signal (e.g., the output of input signal conditioning module 404).

The storage device triggers (622) the power fail condition in accordance with a determination that the input voltage is less than the trip voltage. For example, in FIG. 4A, if the conditioned input signal is less than the conditioned reference signal, comparator 406 is configured to output PFAIL signal 314 to supervisory controller 124 (e.g., logic high). In this example, in FIG. 4A, PFAIL signal 314 indicates the occurrence of a power fail condition (e.g., an under voltage event) as to V_dd 152. For example, in response to receiving PFAIL signal 314 from comparator 406 indicating the power fail condition as to V_dd 152, supervisory controller 124 or a component thereof (e.g., processor 202) is configured to perform one or more operations of a power fail process including signaling the power fail condition to a plurality of controllers on storage device 120 (e.g., storage controller 128 and NVM controllers 130, FIG. 1) via control lines 162, controlling transistors 502, 504 so that V_switched 160 is the voltage from energy storage device 510.

In another example, in response to detecting a power fail condition (e.g., an under or over voltage event) as to V_dd 152, V_dd Monitoring Circuitry 304 or a component thereof (e.g., comparator 406) asserts output PFAIL signal 314 to the plurality of controllers in storage device 120 (e.g., storage controller 128 and NVM controllers 130, FIG. 1). Continuing with this example, V_dd Monitoring Circuitry 304 also controls transistors 502, 504 so that V_switched 160 is the voltage from energy storage device 510. In this example, V_dd Monitoring Circuitry 304 directly asserts the PFAIL signal so as to reduce the latency of the PFAIL transition which provides power to the controllers via energy storage device 510.

In some embodiments, the trip voltage is a first trip voltage and the input voltage is a supply voltage provided by the host system, the storage device compares (624) a second trip voltage to a serial presence detect (SPD) voltage provided by the host system, and, in accordance with a determination that the SPD voltage is less than the second trip voltage, the storage device triggers the power fail condition. In some embodiments, the second trip voltage is not determined because V_SPD is a standardized value (e.g., 3.3 V). For example, in FIG. 4B, comparator 426 performs a comparison operation between the conditioned reference signal (e.g., the output of reference signal conditioning module 422) and the conditioned input signal (e.g., the output of input signal conditioning module 424). In this example, in FIG. 4B, if the conditioned input signal is less than the conditioned reference signal, comparator 426 is configured to output PFAIL signal 314 to supervisory controller 124 (e.g., logic high). In this example, in FIG. 4B, PFAIL signal 314 indicates the occurrence of a power fail condition as to V_SPD 156. For example, optionally, in some circumstances, in response to receiving PFAIL signal 314 from comparator 426 indicating the power fail condition as to V_SPD 156, supervisory controller 124 or a component thereof (e.g., processor 202) is configured to perform one or more operations of a power fail process including signaling the power fail condition to a plurality of controllers on storage device 120 (e.g., storage controller 128 and NVM controllers 130, FIG. 1) via control lines 162 and causing back up power to be provided to supervisory controller 124 (e.g., V_switched 160 via keeper circuitry 512, as shown in FIG. 5).

In another example, in response to detecting a power fail condition (e.g., an under or over voltage event) as to V_SPD 156, V_SPD Monitoring Circuitry 306 or a component thereof (e.g., comparator 426) asserts output PFAIL signal 314 to the plurality of controllers in storage device 120 (e.g., storage controller 128 and NVM controllers 130, FIG. 1). Continuing with this example, V_SPD Monitoring Circuitry 306 also controls transistors 502, 504 so that V_switched 160 is the voltage from energy storage device 510. In this example, V_SPD Monitoring Circuitry 306 directly asserts the PFAIL signal so as to reduce the latency of the PFAIL transition which provides power to the controllers via energy storage device 510.

In some embodiments, comparing the second trip voltage to the SPD voltage provided by the host system includes comparing (626) a voltage-supply independent voltage with a voltage derived from the SPD voltage. For example, V_ref 414 is a voltage-supply independent voltage provided by comparator 406, as shown in FIG. 4A. For example, in FIG. 4B, comparator 426 compares V_ref 414 with a scaled version of V_SPD 156. In this example, if V_ref 414 is 1.23 V and the target voltage for V_SPD 156 is 3.3 V, input signal conditioning module 424 is configured to scale down V_SPD 156 (e.g., by approximately 73% or a factor of 2.7).

In some embodiments, the storage device provides (628) hysteresis with respect to subsequent comparisons using feedback of the comparison of the trip voltage with the input voltage. For example, in FIG. 4A, comparator 406 is configured to provide hysteresis 410 of the result of the comparison operation of DAC output 312 and V_dd 152 for subsequent comparisons (e.g., 3 to 10 mV of feedback). In another example, in FIG. 4B, comparator 426 is configured to provide hysteresis 428 of the result of the comparison operation of V_ref 414 and V_SPD 156 for subsequent comparisons.

In some embodiments, the storage device latches (630) the power fail condition. For example, in FIG. 4A, when comparator 406 indicates the occurrence of a power fail condition as to V_dd 152, PFAIL signal 314 (e.g., logic high) is provided to latching mechanism 412. In this example, PFAIL signal 314 enables transistor 408 (closed state) which shorts the input signal (e.g., V_dd 152) to ground and, in turn, latches the power fail condition.

In some embodiments, after latching the power fail condition and completion of a power fail process, the storage device clears (632) the latched power fail condition. In some embodiments, supervisory controller 124 or a component thereof (e.g., latching module 228, FIG. 2A) is configured to unlatch the power condition upon completion of the power fail process by providing a PFAIL control signal 316 (e.g., logic low) that disables transistor 408 (open state) which opens the circuit from V_dd 152 to ground and, in turn, unlatches the power fail condition. In some embodiments, the power fail process is complete once the plurality of controllers (e.g., storage controller 128 and NVM controller 130, FIG. 1) has transferred data held in volatile memory to non-volatile memory.

In some embodiments, the storage device triggers (634) the power fail condition in accordance with a condition determined by execution of one or more procedures by a controller within the storage device. In some embodiments, supervisory controller 124 or a component thereof (e.g., latching module 228, FIG. 2A) is configured to force the power fail condition by providing PFAIL control signal 316 (e.g., logic high) that enables transistor 408 (closed state) which shorts the input signal (e.g., V_dd 152) to ground and, in turn, forces the power fail condition to occur. For example, the forced or simulated power fail condition is utilized to test one or more operations of the power fail process.

In some embodiments, the storage device modifies (636) one of a plurality of stored predefined trip voltages in response to a command from the host system. In some embodiments, supervisory controller 124 or a component thereof (e.g., modification module 222, FIG. 2A) is configured to modify one or more trip voltages stored in trip voltage table 220 in response to a request or command from the host system (e.g., computer system 110). In some embodiments, supervisory controller 124 is configured to receive commands (or requests) from the host system (e.g., computer system 110) via SPD bus 154. In some embodiments, storage device 120 includes a data controller coupled between host interface 122 and storage controller 128 that is configured to control the input and output of data to the one or more NVM devices. For example, the data controller is configured to receive commands (or requests) from the host system (e.g., computer system 110) and communicate the command to supervisory controller 124 (e.g., via a semaphore register or I²C).

It will be understood that, although the terms “first,” “second,” etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first NVM controller could be termed a second NVM controller, and, similarly, a second NVM controller could be termed a first NVM controller, without changing the meaning of the description, so long as all occurrences of the “first NVM controller” are renamed consistently and all occurrences of the “second NVM controller” are renamed consistently. The first NVM controller and the second NVM controller are both NVM controllers, but they are not the same NVM controller.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the claims. As used in the description of the embodiments and the appended claims, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that the term “and/or” as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

As used herein, the term “if” may be construed to mean “when” or “upon” or “in response to determining” or “in accordance with a determination” or “in response to detecting,” that a stated condition precedent is true, depending on the context. Similarly, the phrase “if it is determined [that a stated condition precedent is true]” or “if [a stated condition precedent is true]” or “when [a stated condition precedent is true]” may be construed to mean “upon determining” or “in response to determining” or “in accordance with a determination” or “upon detecting” or “in response to detecting” that the stated condition precedent is true, depending on the context.

The foregoing description, for purpose of explanation, has been described with reference to specific embodiments. However, the illustrative discussions above are not intended to be exhaustive or to limit the claims to the precise forms disclosed. Many modifications and variations are possible in view of the above teachings. The embodiments were chosen and described in order to best explain principles of operation and practical applications, to thereby enable others skilled in the art.

Claims

1. A method of triggering a power fail condition in a storage device operatively coupled with a host system, comprising:

2. The method of claim 1, wherein the input voltage is a supply voltage provided by the host system, the method further comprising: comparing a second trip voltage to a serial presence detect (SPD) voltage provided by the host system, wherein the SPD voltage is distinct from the supply voltage provided by the host system; andin accordance with a determination that the SPD voltage is less than the second trip voltage, triggering the power fail condition.

3. The method of claim 2, wherein comparing the second trip voltage to the SPD voltage provided by the host system includes comparing a voltage-supply independent voltage with a voltage derived from the SPD voltage.

4. The method of claim 1, wherein the one or more configuration parameters include configuration information of the storage device.

5. The method of claim 1, wherein information identifying the default input voltage is obtained from the host system.

6. The method of claim 1, further comprising: sampling the input voltage to determine the default input voltage.

7. The method of claim 1, further comprising: based on the one or more configuration parameters, modifying one or more timing parameters associated with a communication bus that operatively couples the storage device and the host system.

8. The method of claim 1, wherein determining the first trip voltage includes: selecting one of a plurality of predefined trip voltages from the table of predefined trip voltage as the first trip voltage based on the one or more configuration parameters.

9. The method of claim 1, further comprising: in response to a modification command from the host system, modifying a predefined trip voltage within the table of predefined trip voltages.

10. The method of claim 1, further comprising: prior to the comparing, conditioning the first trip voltage including: buffering the first trip voltage; andafter the buffering, level shifting and scaling the first trip voltage.

11. The method of claim 1, further comprising: prior to the comparing, conditioning the input voltage including: scaling the input voltage; andfiltering the input voltage.

12. The method of claim 1, further comprising: providing hysteresis with respect to subsequent comparisons using feedback of the comparison of the first trip voltage with the input voltage.

13. The method of claim 1, further comprising: latching the power fail condition.

14. The method of claim 13, further comprising: after latching the power fail condition and completion of a power fail process, clearing the latched power fail condition.

15. The method of claim 1, further comprising: triggering the power fail condition in accordance with a condition determined by execution of one or more procedures by a controller within the storage device.

16. A storage device, comprising: an interface for operatively coupling the storage device with a host system;a supervisory controller with one or more processors and memory;a power fail module for detecting a power fail condition; anda plurality of controllers for managing one or more non-volatile memory devices, the storage device configured to: obtain one or more configuration parameters, the one or more configuration parameters including an indication of a default input voltage;access a table of predefined trip voltages;based on the one or more configuration parameters and the table of predefined trip voltages, determine a first trip voltage;compare the first trip voltage with an input voltage; andin accordance with a determination that the input voltage is less than the first trip voltage, trigger the power fail condition.

17. The storage device of claim 16, wherein the input voltage is a supply voltage provided by the host system, and the storage device is further configured to: compare a second trip voltage to a serial presence detect (SPD) voltage provided by the host system, wherein the SPD voltage is distinct from the supply voltage provided by the host systemin accordance with a determination that the SPD voltage is less than the second trip voltage, trigger the power fail condition.

18. The storage device of claim 17, wherein comparing the second trip voltage to the SPD voltage provided by the host system includes comparing a voltage-supply independent voltage with a voltage derived from the SPD voltage.

19. The storage device of claim 16, wherein the one or more configuration parameters include configuration information of the storage device.

20. A non-transitory computer readable storage medium, storing one or more programs for execution by one or more processors of a storage device, the one or more programs including instructions that when executed by the one or more processors cause the storage device to: obtain one or more configuration parameters, the one or more configuration parameters including an indication of a default input voltage;access a table of predefined trip voltages;based on the one or more configuration parameters and the table of predefined trip voltages, determine a first trip voltage;compare the first trip voltage with an input voltage; andin accordance with a determination that the input voltage is less than the first trip voltage, trigger the power fail condition.

21. The non-transitory computer readable storage medium of claim 20, wherein the input voltage is a supply voltage provided by the host system, and the one or more programs further include instructions, that when executed by the one or more processors cause the storage device to: compare a second trip voltage to a serial presence detect (SPD) voltage provided by the host system, wherein the SPD voltage is distinct from the supply voltage provided by the host system; andin accordance with a determination that the SPD voltage is less than the second trip voltage, trigger the power fail condition.

22. The non-transitory computer readable storage medium of claim 21, wherein comparing the second trip voltage to the SPD voltage provided by the host system includes comparing a voltage-supply independent voltage with a voltage derived from the SPD voltage.

23. The non-transitory computer readable storage medium of claim 20, wherein the one or more configuration parameters include configuration information of the storage device.