Systems for producing semiconductors and members therefor

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The invention relates to a member for use in a system for producing semiconductors and provided around a susceptor for mounting a semiconductor, in a chamber for producing semiconductors.

[0004] 2. Related Art Statement

[0005] In a system for producing semiconductors, it is known to mount a semiconductor wafer on a ceramic heater for heating the wafer when a semiconductor thin film is produced on the wafer from gaseous raw materials such as silane gas by means of thermal CVD or the like (direct heating system). A so called multi zone heater have been known for the ceramic heater used in the direct heating system. Such multi zone heater has a ceramic substrate and inner and outer resistance heat generators of high melting point metals embedded within the substrate. Separate power supply terminals are connected to the respective heat generators so that electric power may be applied independently on the respective generators. The inner and outer heat generators may be thus independently controlled.

[0006] In JP-A 5-326112, a resistance heat generator of a ceramic heater is constituted by plural circuit patterns each made of a high melting point metal. The circuit patterns are so arranged that they may supplement one another's defect portions. For example, one of the patterns has a defect portion such as a folded portion or a returning portion. In this case, another circuit pattern is overlapped on or over the defect portion of the one pattern.

[0007] For example, in a heater to be used for heating semiconductor wafers, the temperature of the heating face of the heater needs to be uniformly controlled over the entire surface. It is required that the heater satisfy a severe specification, for example, that the temperature measured on the heating face is within ±5° C. of the average of the whole heating face under a use condition.

SUMMARY OF THE INVENTION

[0008] For example, a ceramic heater with an inner resistance heat generator is produced and an electrical power is supplied to the heat generator so that the average temperature of the heating face reaches a desired target value. It is now provided that the temperature over the heating face is within a desired range after the average temperature reaches the target value. Even in this case, however, the temperature distribution of the heating face may be substantially changed after the heater is actually fixed in a chamber. Such change of the temperature distribution depends on various conditions as follows. A fitting is used for fixing a ceramic heater on the wall of a chamber. The area and shape of the surface region of the heater contacted with the fitting may affect the temperature distribution. In addition to this, the temperature distribution may be affected by the thermal capacity of the fitting, the shape and thermal capacity of a chamber, thermal reflection and absorption on the inner wall surface of a chamber, and the pressures and gas flow inside and outside of a chamber.

[0009] Even when the heating face of a ceramic heater has a desired uniformity of temperature before the heater is fixed in a chamber, the temperature distribution may be out of the desired uniformity after the heater is fixed in the chamber, according to the above reasons. It is thus desired to adjust the supplied power to the heat resistor so that the temperature distribution on the heating face can be reduced, after the heater is fixed in a chamber.

[0010] Such adjustment may be actually difficult due to the following reasons. That is, when the supplied power to the heat resistor is increased or decreased, the whole of the heat energy generated by the heat resistor is changed. In this case, the temperature distribution on the heating face is not necessarily reduced and even may be increased, after the ceramic heater is fixed in the chamber. Further, so called two-zone heater described above may be effective for changing the average temperatures of the outer and inner portions of the heating face, respectively and independently. In such two-zone heater, however, hot spots or cold spots may be observed in only a part of the heating face, after the two-zone ceramic heater is fixed in a chamber. The two-zone control system may not be effective for reducing such cold and hot spots observed in only a small part of the heating face.

[0011] The inventors also considered the following system. That is, a ceramic heater is divided into many zones and separate resistance heat generators are provided each corresponding with each of the zones. The electric power values to the heating elements are independently controlled. When a cold spot is observed in one of the zones of the heating face, it seems to be effective to increase an electric power supplied to the heat generator corresponding with the zone with the cold spot observed. Such increased electric power to the zone seems to improve the heat generation so that the cold spot may be reduced or cancelled.

[0012] The inventors have investigated this idea and finally found that the control may be also ineffective for reducing the temperature distribution. The reasons would be as follows. The temperature of each zone of the heating face is influenced by the heat generation right under the zone, as well as the heat generation by another heat generators provided right under another zones, respectively. The temperature distribution on the heating face may be determined by many factors including the followings; heat generated from each heat generator, the shape, dimension and thermal capacity of a ceramic substrate, and the temperature, pressure and gas flow around the substrate. Such factors may affect each other. It is possible to reduce or cancel a cold spot by increasing an electric power supplied to a heat generator corresponding with the zone with the cold spot observed. In this case, however, the heat generated from the heating element right under the cold spot is transmitted to the adjacent zones, so that the total balance of heat generation and transfer in the substrate and the temperature distribution on the heating face may be changed. Such change of balance of heat generation and transfer may generate a new hot spot on the heating face or increase the average temperature of the surface. When the average temperature of the heating face is increased, it is necessary to reduce electric power values supplied to another heat generators provided for another zones. Such reduction of the electric power supplied to another heat generators may induce another cold spots on the heating face. The difference of the maximum and minimum temperatures on the heating face may be thus increased in many cases by canceling one cold spot as described above.

[0013] An object of the present invention is to provide a method of heating a semiconductor on a susceptor in a chamber, in which the temperature distribution on the susceptor can be reduced even when a target temperature of the susceptor is high.

[0014] The first aspect of the present invention provides a member provided around a susceptor for mounting a semiconductor in a chamber for a semiconductor production system. The member has an opposing face opposing the susceptor and having a center line average surface roughness of 0.5 μm or lower.

[0015] The inventors have studied the cause of deviation in the temperature distribution on the surface of a susceptor such as cold and hot spots, and reached the following discovery. For example, it is provided that a metal heat generating wire is embedded in a ceramic susceptor to produce a ceramic heater. When electric power is supplied to the wire in the heater to generate heat, the supplied electric power and the uniformity of temperature on the heating face of the heater are correlated with each other. That is, as the electric power is smaller, the uniformity of temperature on the heating face of the heater and semiconductor wafer thereon are better, provided that the target temperature on the heating face is not changed. The reasons would be as follows. In any heater, the heat generator therein has local distribution of resistance and deviation of thermal resistance between the heat generator and ceramic material. As the electric power supply to the heat generator is larger, the influence of the local distribution of resistance of the heat generator as well as the deviation of thermal resistance between the heat generator and ceramic material on the uniformity of temperature on the heating face are more considerable. The uniformity of temperature on the heating face may be adversely affected to result in cold and hot spots. It is thus desired to reduce supplied electric power required for attaining the target temperature on the heating face.

[0016] According to the inventor's study, a substantial portion of electric power supplied to the ceramic heater is not utilized for convection heating of a semiconductor wafer, which is a major purpose, resulting in a substantial heat loss from the heater to the outside thereof. The electric power supply to the heat generator required for attaining the target temperature becomes large. It is thus difficult to attain uniform temperature distribution on the heating face of the heater.

[0017] The heat loss from the heater, which is not utilized for the convection heating of the wafer, includes the followings.

[0018] (1) Thermal transmission from the heater substrate to atmosphere in a chamber

[0019] (2) Thermal conduction from the heater substrate to a cooling portion of an end of a shaft (a member for supporting the heater)

[0020] (3) Heat transfer by radiation from the heater substrate to a member (for example a gas supply plate or liner) in a chamber

[0021] Since the distance of each member in a chamber and heater is relatively small and the member has a low surface temperature, the effect (3) of the heat transfer by radiation toward the members in a chamber proved to be largest. Based on the discovery, the inventors have noted thermal radiation to a member in a chamber and reached the idea of reducing the center line average surface roughness Ra of the opposing face of the member opposing the susceptor to 0.5 μm or lower. It is thus possible to reduce heat energy radiated without being utilized for heating the semiconductor through the susceptor, and to reduce supplied energy to the susceptor required for the target temperature for heating. It is thus possible to improve the uniformity of temperature on the heating face of the susceptor while the desired target temperature can be attained.

[0022] The second aspect of the present invention provides a member provided around a susceptor for mounting a semiconductor in a chamber for a semiconductor production system. The member has an opposing face opposing the susceptor and having a thermal emissivity ε of 0.5 or lower.

[0023] According to the invention, the thermal emissivity ε of the opposing face of the member facing the susceptor is made 0.5 or lower. It is thus possible to reduce heat energy radiated without being utilized for heating the semiconductor through the susceptor, and to reduce supplied energy to the susceptor required for the target temperature for heating. It is thus possible to improve the uniformity of temperature on the susceptor while the desired target temperature can be attained.

[0024] The third aspect of the present invention provides a member provided around a susceptor for mounting a semiconductor in a chamber for a semiconductor production system. The member is a liner having an opposing face opposing the susceptor and a supported face where the liner is supported, and the supported face has an area of 20 percent or lower of that of said opposing face.

[0025] The inventors have studied further the causes of an increase of thermal radiation from the susceptor to the liner. They noted that the supported face of the liner is relatively low, even when the target temperature of the susceptor is high. The reasons are as follows. The supported face of the liner is fixed onto the inner wall surface of the chamber, which is constantly cooled with a cooling medium flowing in the chamber wall. The whole of the liner is thus maintained at a relatively low temperature. The inside of the chamber is normally cooled with flowing water, so that the inner wall surface of the chamber is maintained at a temperature of 70° C. or lower.

[0026] The present inventors have reached the idea of reducing the area of the supported face of the liner to 20 percent or lower of the area of the opposing face of the liner. It is thus possible to considerably reduce the thermal conduction by convection from the liner to the inner wall surface of the chamber, so that the temperature gradient in the liner can be increased. It is thus possible to reduce the loss of power due to thermal radiation from the susceptor to the liner and to reduce the supplied power required for attaining the desired target temperature. It is thus possible to improve the uniformity of temperature on the susceptor while the desired target temperature can be attained.

[0027] The fourth aspect of the present invention provides a member provided around a susceptor for mounting a semiconductor in a chamber for a semiconductor production system. The member is a liner, and the liner has an opposing face opposing the susceptor, a back face facing the chamber and a thin portion between the opposing and back faces. The thin portion has an average thickness of 10 mm or smaller.

[0028] According to the invention, the thermal conduction by convection from the liner to the inner wall surface of the chamber can be considerably reduced, so that the temperature gradient in the liner can be increased. It is thus possible to reduce the loss of power due to thermal radiation from the susceptor to the liner and to reduce the supplied power required for attaining the desired target temperature. It is thus possible to improve the uniformity of temperature on the susceptor while the desired target temperature can be attained.

[0029] The present invention further provides a system for producing semiconductors comprising a chamber, a susceptor for mounting a semiconductor, and the member of any one of the above aspects provided around the susceptor.

[0030] These and other objects, features and advantages of the invention will be appreciated upon reading the following description of the invention when taken in conjunction with the attached drawings, with the understanding that some modifications, variations and changes of the same could be made by the skilled person in the art.

BRIEF DESCRIPTION OF THE DRAWINGS

[0031]
FIG. 1 is a cross sectional view schematically showing a system 1 for producing semiconductors according to one embodiment of the present invention.

[0032]
FIG. 2(a) is a cross sectional view schematically showing a gas supply plate 3.

[0033]
FIG. 2(b) is a plan view of the gas supply plate 3.

[0034]
FIG. 3 is a plan view showing a liner 4.

[0035]
FIG. 4(a) is a cross sectional view showing a liner 4.

[0036]
FIG. 4(b) is a bottom view showing a supported face of a liner according to another embodiment.

[0037]
FIG. 5 is a plan view showing a lifter 10 for an elevating pin.

[0038]
FIG. 6 is a cross sectional view schematically showing a lifter 10 for an elevating pin.

[0039] Preferred embodiments of the invention The present invention will be described further in detail, referring to the attached drawings. A system for producing semiconductors and members used for the system will be generally described, and the embodiments according to the present invention will be then described.

[0040]
FIG. 1 is a cross sectional view schematically showing a system 1 for producing semiconductors according to the present invention. In the system 1 of the present example, a susceptor 5 is fixed in a chamber 2. The susceptor 5 has a substrate 6 and a heat generating element 7 embedded in the substrate 6. A semiconductor wafer W is mounted on a heating face 6a of the substrate 6. Elevating pins 9 are inserted in the substrate 6. A cylindrical supporting member (shaft) 30 is joined with a back face 6c of the substrate 6. Electric power supplying members 8 are inserted and fixed in an inner space 11 of the supporting member 30.

[0041] A gas supply plate 3 is fixed at a position opposing the semiconductor wafer W. FIG. 2(a) is a cross sectional view schematically showing the gas supply plate 3 according to the present example, and FIG. 2(b) is a front view showing the gas supply plate 3 from the back side 3b.

[0042] Many gas holes 3a are provided in the gas supply plate 3. A circular recess 18 is formed on the back face 3b of the gas supply plate 3. When a gas is supplied from the side of the back face 3b of the gas supply plate 3 as an arrow “A”, the gas is then distributed into the gas holes 3a and discharged from the gas holes 3a as arrows “B”.

[0043] The gas supply plate 3 has a space 18 formed in the side of the back face 3b, so that a ring-shaped thin portion 3e is formed around the space 18. The upper face 3b of the thin portion 3e contacts the chamber.

[0044]
FIG. 3 is a plan view showing a liner 4 according to the present example, and FIG. 4(a) is a cross sectional view showing the liner 4. The liner 4 is substantially ring shaped in a plan view. A substantially circle-shaped recess 22 is formed inside of the liner 4. The susceptor and wafer are contained and surrounded in the recess 22. A gas supply hole 4a and a hole 4b for supplying a wafer are provided between the outer surface 4d and opposing face 4c of the liner 4.

[0045] A ring-shaped space 21 facing the side of back face 4d is formed in the liner 4. As a result, a main portion 4f is formed in the side of the opposing face 4c and a thin portion 4e is formed in the side of the back face 4d. The end face 4d of the thin portion 4e opposes the inner wall surface of the chamber. Ring-shaped supporting protrusions 4f are formed on bottom face of the liner 4, so that the liner is supported on the inner wall surface at the bottom faces 4f of the protrusions 4f.

[0046]
FIG. 5 is a plan view showing a lifter 10 for elevating pin, and FIG. 6 is a cross sectional view showing the lifter 10 for elevating pin. The lifter 10 has a lift part 10a, and a cylindrical supporting part 10b attached on the back face of the lift part 10a. The upper face 10c of the lift part 10a opposes the susceptor and 25 represents a space.

[0047] According to the first aspect of the present invention, the members 3, 4 and 10 have the opposing faces 3c, 4c and 10 opposing the susceptor 5, respectively, each having a center line average surface roughness of 0.5 μm or lower. On the viewpoint of the present invention, the center line average surface roughness may more preferably be 0.4 μm or lower.

[0048] The center line average surface roughness of the opposing face may be reduced by any process not particularly limited, including grinding. The center line average surface roughness of the opposing face may be measured by a surface roughness tester.

[0049] According to the second aspect of the present invention, the members 3, 4 and 10 have the opposing faces 3c, 4c and 10c opposing the susceptor 5, respectively, each having a thermal emissivity ε of 0.5 or lower. On the viewpoint of the present invention, the thermal emissivity ε may preferably be 0.3 or lower.

[0050] For example, the thermal emissivity may be easily measured with a contact type emissivity measuring system (ADV ACED ENERGY Co. Ltd. “MODEL 2100M”) by contacting its censor to an object for measurement without disturbances. The system has an optical cable and an integrating sphere equipped on the end of the cable.

[0051] The system measures the thermal emissivity at room temperature. Although the ε value used in the present invention is a value at room temperature, the thermal emissivity may not be considerably changed at a temperature between 400 and 800° C. In such a case, the thermal emissivity measured at a temperature for use may be used as a substitute.

[0052] The thermal emissivity ε of the opposing face may be reduced by any means not particularly limited, and including the followings.

[0053] (1) The center line surface roughness of the opposing face is reduced (smoothened) to reduce the thermal emissivity of the opposing face.

[0054] (2) The lightness of the opposing face is increased. In this case, the lightness of the opposing face may preferably be N6.0 or higher.

[0055] Lightness will be described below. The surface color of a substance may be represented by three properties of color perception: hue, lightness and chroma. Lightness is a property for representing visual perception judging the reflectance of the surface of a substance. The representations of the three properties are defined in “JIS Z 8721”. The representation of lightness will be briefly described. The lightness “V” is defined based on achromatic colors. The lightness of ideal black and that of ideal white are defined as “0” and “10”, respectively. Achromatic colors between the ideal black and ideal white are divided into 10 categories and represented as symbols from “N0” to “N10”. The categories are divided so that each category has a same rate or span in terms of visual perception of lightness. When actually measuring the lightness of a ceramic substrate, the surface color of the substrate is compared with standard color samples corresponding with “N0” to “N10” to determine the lightness of the body. The lightness is determined to the first decimal point, whose value is selected from “0” and “5”.

[0056] Further, according to the third aspect of the present invention, the supported face 4g of the liner 4 has an area “SB” (refer to FIGS. 3 and 4) of 20 percent or lower of the area “SO” of the opposing face 4c. The area “SB” of the supported face 4g is made considerably smaller than the area “SO” of the opposing face as described above. It is thus possible to reduce the thermal transfer from the liner to the chamber and to reduce the thermal transfer by radiation from the susceptor toward the opposing face of the liner. On the viewpoint, the area “SB” (refer to FIGS. 3 and 4) of the supported face 4g of the liner 4 may more preferably be 10 percent or lower of the area “SO” of the opposing face 4c.

[0057] Further as shown in FIG. 4(b), a plurality of, for example three, small protrusions each substantially having a circular shape may be provided on the bottom face of the liner 4, so that the end faces 31 of the protrusions function as the supported faces. In this case, the area “SB” is a total of the areas of the end faces 31 of the protrusions.

[0058] According to the fourth aspect of the present invention, a thin portion having an average thickness of 10 mm or smaller is provided between the back face 4d (refer to FIGS. 3 and 4) of the liner facing the chamber and the opposing face 4c.

[0059] That is, a prior liner is substantially plate shaped, so that the thermal conduction between the back and opposing faces is large and the temperature gradient therebetween is small. According to the fourth aspect, the thin portion having an average thickness of 10 mm or lower is provided, so that the temperature gradient between the back face 4d and opposing face 4c is increased to successfully reduce thermal transfer by radiation from the susceptor to the liner.

[0060] The liner 4 according to the present invention has a thin portion 4e having a thickness “t” of 10 mm or smaller.

[0061] On the viewpoint of the present invention, the average thickness of the thin portion may more preferably be 5 mm or smaller.

[0062] Further in a preferred embodiment, a space 18 is formed in the liner 4. The space may be formed inside of the liner 4. Most preferably, the space 18 faces the inner wall surface 2b of the chamber to further reduce the thermal conduction from the opposing face to the chamber.

[0063] The effects of the present invention are most considerable in a temperature of 400° C. or higher. In a preferred embodiment, the target temperature of the semiconductor is set at 400° C. or higher.

[0064] Further the advantageous effects of the present invention are most considerable when the distances of the opposing faces 3c, 4c and 10c of the member in the chamber and the susceptor are small. On the viewpoint, each of the distances between the opposing faces 3c, 4c and 10c of the members and the susceptor may preferably be 300 mm or smaller, and more preferably 50 mm or smaller.

[0065] The system for producing semiconductors is a system for use in any process for producing semiconductors including cleaning, etching, testing or the like.

[0066] The members according to the present invention is a member to be provided around a susceptor in a chamber of system for producing semiconductors.

[0067] The material of the member of the present invention is not particularly limited and may preferably be a corrosion resistant ceramics or corrosion resistant metal. More preferably, the material is the alloy of aluminum, alloy of nickel, an aluminum series ceramics such as alumina, aluminum nitride or the like, and a silicon series ceramics such as silicon nitride, silicon carbide, quartz, silica glass or the like.

[0068] The thermal emissivity of the opposing face of the member can be reduced by forming the member with the alloy of aluminum. Further, when the member is formed of a ceramic material, a fillet (having an R of 5 mm or larger) may preferably be provided in the corner portion of the member for preventing cracks.

EXAMPLE

Comparative Example 1

[0069] A heat generating wire 7 of a coil spring of molybdenum was embedded in a sintered body of aluminum nitride to obtain a heater 5. The heater 5 was fixed to a chamber 2 using a ceramic supporting member 30. Further, the gas supply plate, liner and lifter for elevating pin were contained and fixed in the chamber 2. Each of the gas supply plate and liner substantially has a shape of a rectangular parallelopiped, in which the space and thin portion shown in FIGS. 2 to 4 were not provided. The gas supply plate, liner and lifter for elevating pin were made of silicon carbide, silicon nitride and silicon nitride, respectively. The opposing faces 3c, 4c and 10c were not subjected to a smoothing process. The center line average surface roughness Ra and thermal emissivity ε of each opposing face were shown in table 1.

[0070] An electric power of about 2000 W was supplied to the heat generating element 7 in the heater 5 to heat a semiconductor wafer W. The target temperature for the wafer W was set at 700° C. 17 points on the surface of the wafer was measured for temperature by means of a radiation thermometer to obtain the maximum and minimum temperatures. The difference of the maximum and minimum temperatures is calculated and shown in table 1.

1TABLE 1ComparativeInventiveexample 1example 1Surface roughness ofGas supply plate0.80.2the opposing face of aLiner1.00.4member opposing aLifter for elevating1.00.4susceptor Ra (μm)pinThermal emissivity ε ofGas supply plate0.60.2the face of a memberLiner0.80.2opposing a susceptorLifter for elevating0.80.3PinSupplied energy to susceptor (W)20001000Difference between maximum and minimum158temperatures of semiconductor (° C.)

[0071] According to the comparative example 1, the difference of the maximum and minimum temperatures on the wafer can be reduced to about 15° C. at a target temperature of 700° C.

Inventive Example 1

[0072] The difference of temperature on the wafer was measured according to the same procedure as that in the comparative example 1. In the inventive example 1, each of the gas supply plate and liner substantially has a shape of a rectangular parallelopiped, in which the space and thin portion shown in FIGS. 2 to 4 were not provided. The gas supply plate, liner and lifter for elevating pin were made of the alloy of aluminum, alumina and alumina, respectively. The opposing faces 3c, 4c and 10c were subjected to a smoothing process. The center line average surface roughness Ra and thermal emissivity ε of each opposing face were shown in table 1.

[0073] As a result, it was proved that the temperature difference on the wafer W can be reduced to about 8° C. at a supplied power to the heater (susceptor) 5 of about 1000 W, which was about a half of that required in the comparative example 1. It was thus found that a substantial portion of the supplied power to the susceptor 5 in the comparative example 1 was radiated to the gas supply plate, liner and lifter for elevating pin, resulting in thermal loss. It was thus necessary to supply a large amount of power to the susceptor for compensating the thermal loss in the comparative example 1, so that cold and hot spots may be easily observed on the heating face. On the contrary, the power necessary for attaining the target temperature supplied to the susceptor can be reduced to 1000 W in the inventive example 1. It was thus possible to reduce cold and hot spots on the heating face and to reduce the temperature difference on the wafer.

Comparative Example 2

[0074] The experiment was carried out according to the same procedure as that in the comparative example 1. Each of the gas supply plate, liner and lifter for elevating pin substantially had a shape of a rectangular parallelopiped, in which the space and thin portion shown in FIGS. 2 to 4 were not provided. The gas supply plate, liner and lifter for elevating pin were made of the alloy of aluminum, alumina and alumina, respectively. The opposing faces 3c, 4c and 10c were not subjected to a smoothing process. The area “SO” of the opposing face and the area “SB” of the supported face of the liner were about 63,000 mm. The thickness of the liner was 35 mm. In the present example, a small space is formed between the back face 4d and inner wall surface of the chamber.

[0075] An electric power of about 2000 W was supplied to the heat generating element 7 in the heater 5 to heat a semiconductor wafer W. The target temperature for the wafer W was set at 700° C. 17 points on the surface of the wafer was measured for temperature by means of a radiation thermometer to obtain the maximum and minimum temperatures. The difference of the maximum and minimum temperatures is calculated and shown in table 2.

2TABLE 2ComparativeInventiveExample 2Example 2Supplied energy for susceptor (W)20001500Area of region of liner contacted630003000with chamber (mm2)Difference of maximum and minimum1511temperatures of wafer (° C.)

[0076] In the comparative example 2, it was proved that the temperature difference on the wafer W can be reduced to about 15° C. at a target temperature of 700° C.

Inventive Example 2

[0077] The difference of temperature on the wafer was measured according to the same procedure as that in the comparative example 0.2. In the inventive example 2, the gas supply plate and the lifter for elevating pin were the same as those used in the comparative example 2. The liner 4 shown in FIGS. 3 and 4 was used. The area “SO” of the opposing face 4c of the liner was about 63, 000 mm 2, and the area “SB” of the supported face 4g of the liner 4 was about 3000 mm2. The thickness of the thin portion 4e of the liner 4 was 5 mm.

[0078] As a result, it was proved that the temperature difference on the wafer W can be reduced to about 11° C. at a supplied power to the heater (susceptor) 5 of about 1500 W, which was lower than that required in the comparative example 2.

[0079] As described above, the present invention provides a method of heating a semiconductor on a susceptor in a chamber, in which the temperature distribution on the susceptor can be reduced even when a target temperature of the susceptor is high.

[0080] The present invention has been explained referring to the preferred embodiments. However, the present invention is not limited to the illustrated embodiments which are given by way of examples only, and may be carried out in various modes without departing from the scope of the invention.

Systems for producing semiconductors and members therefor

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