The present disclosure is related to the subject matter of commonly-owned U.S. patent application Ser. No. 14/820,422, being filed concurrently with this application on Aug. 6, 2015, and incorporated herein by reference in its entirety for all purposes.
The present disclosure applies broadly to the field of processing equipment. More specifically, systems and methods for providing spatially tailored processing of a workpiece are disclosed.
Integrated circuits and other semiconductor products are often fabricated on surfaces of substrates called “wafers.” Sometimes processing is performed on groups of wafers held in a carrier, while other times processing and testing are performed on one wafer at a time. When single wafer processing or testing is performed, the wafer may be positioned on a wafer chuck. Other workpieces may also be processed on similar chucks. Chucks can be temperature controlled in order to control temperature of a workpiece for processing.
In an embodiment, a workpiece holder positions a workpiece for processing. The workpiece holder includes a substantially cylindrical puck that is characterized by a cylindrical axis, a puck radius about the cylindrical axis, and a puck thickness. The puck radius is at least four times the puck thickness, at least a top surface of the cylindrical puck is substantially planar, and the cylindrical puck defines one or more radial thermal breaks. Each thermal break is characterized as a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess is characterized by a thermal break depth that extends from the top surface or the bottom surface of the puck through at least half of the puck thickness, and a thermal break radius that is disposed symmetrically about the cylindrical axis, and is at least one-half of the puck radius.
In an embodiment, a method of processing a wafer includes processing the wafer with a first process that provides a first center-to-edge process variation; and subsequently, processing the wafer with a second process that provides a second center-to-edge process variation. The second center-to-edge process variation substantially compensates for the first center-to-edge process variation.
In an embodiment, a workpiece holder that positions a workpiece for processing. The workpiece holder includes a substantially cylindrical puck that is characterized by a cylindrical axis and a substantially planar top surface. The cylindrical puck defines two radial thermal breaks. A first one of the thermal breaks is characterized as a radial recess that intersects a bottom surface of the cylindrical puck at a first radius, and extends from the bottom surface through at least one-half of a thickness of the puck. A second one of the thermal breaks is characterized as a radial recess that intersects the top surface at a second radius that is greater than the first radius, and extends from the top surface through at least one-half of the thickness of the puck. A thermal sink extends substantially beneath the bottom surface of the puck, and includes a metal plate that flows a heat exchange fluid through channels defined therein, to maintain a reference temperature for the puck. A first heating device is disposed between the thermal sink and the puck. The first heating device is in thermal communication with the bottom surface of the puck and with the thermal sink, within the first radius. A second heating device is disposed between the thermal sink and the puck. The second heating device is in thermal communication with the bottom surface of the puck and with the thermal sink, outside the second radius.
The present disclosure may be understood by reference to the following detailed description taken in conjunction with the drawings described below, wherein like reference numerals are used throughout the several drawings to refer to similar components. It is noted that, for purposes of illustrative clarity, certain elements in the drawings may not be drawn to scale. Specific instances of an item may be referred to by use of a numeral following a dash (e.g., heaters 220-1, 220-2) while numerals without parentheses refer to any such item (e.g., heaters 220). In instances where multiple instances of an item are shown, only some of the instances may be labeled, for clarity of illustration.
Processing system 100 is shown as a so-called indirect plasma processing system that generates a plasma in a first location and directs the plasma and/or plasma products (e.g., ions, molecular fragments, energized species and the like) to a second location where processing occurs. Thus, in
Embodiments herein provide new and useful functionality for wafer processing systems. Semiconductor wafer sizes have increased while feature sizes have decreased significantly over the years, so that more integrated circuits with greater functionality can be harvested per wafer processed. Processing smaller features while wafers grow larger requires significant improvements in processing uniformity. Because chemical reaction rates are often temperature sensitive, temperature control across wafers during processing is often key to uniform processing.
Also, some types of processing can have radial effects (e.g., processing that varies from center to edge of a wafer). Some types of process equipment control these effects better than others, that is, some achieve high radial process uniformity while others do not. Embodiments herein recognize that not only are radial effects important to control, but it would be further advantageous to be able to provide radial processing control that can be tailored to compensate for processing that cannot achieve such control. For example, consider a case in which a layer is deposited on a wafer and then selectively etched off, as is common in semiconductor processing. If the deposition step is known to deposit a thicker layer at the wafer's edge than at its center, a compensating etch step would advantageously provide a higher etch rate at the wafer's edge than at its center, so that the deposited layer would be etched to completion at all parts of the wafer at the same time. Similarly, if an etch process were known to have a center-to-edge variation, a compensating deposition preceding the etch process could be adjusted to provide a corresponding variation.
In many such cases of processing with radial effects, a compensating process can be provided by providing explicit center-to-edge temperature variation, because temperature often substantially influences reaction rates of processes.
Puck 200 defines one or more radial thermal breaks 210, as shown. Thermal breaks 210 are radial recesses defined in puck 200, that intersect at least one of top surface 202 or bottom surface 204 of puck 200. Thermal breaks 210 act as the term implies, that is, they provide thermal resistance, between a radially inner portion 212, and a radially outer portion 214, of puck 200. This facilitates explicit radial (e.g., center-to-edge) thermal control of the radially inner and outer portions of puck 200, which is advantageous in terms of either providing precise thermal matching of the inner and outer portions, or of providing deliberate temperature variation across the inner and outer portions. Thermal breaks 210 can be characterized in terms of having a thermal break depth and a thermal break radius. Depth of thermal breaks 210 can vary among embodiments, but the thermal break depth usually exceeds one-half of thickness t. Radial positioning of thermal breaks 210 can also vary among embodiments, but the thermal break radius r2 is usually at least one-half of puck radius r1, and in other embodiments r2 may be three-fourths, four-fifths, five sixths or more of puck radius r1. Certain embodiments may use a single thermal break 210, while other embodiments may use two thermal breaks 210 (as shown in
One way in which thermal breaks, as illustrated in
Optional thermal sink 230 may also be provided. Thermal sink 230 may be controlled to present a lower temperature than typical operating temperatures, for example by flowing a heat exchange fluid therethrough, or by using a cooling device such as a Peltier cooler. When present, thermal sink 230 provides several advantages. One such advantage is to provide a reference temperature to which all portions of puck 200 will have, in the absence of heat provided by heaters 220. That is, although heaters 220 can provide heat, such heat would ordinarily propagate, in all directions, throughout puck 200. Thermal sink 230 provides the ability to drive puck 200 to lower temperatures, such that if a heater 220 is located at a specific portion of puck 200, the heat generated by the heater does not simply diffuse throughout puck 200 in every direction, but heats a portion of puck 200 where the heat from the heater 220 locally exceeds the tendency of thermal sink 230 to remove the heat.
A related advantage is that thermal sink 230 can provide rapid thermal sinking capability such that when temperature settings of heaters 220 (e.g., current passing through resistive wires) decrease, adjacent portions of puck 200 respond with a relatively rapid temperature decrease. This provides the benefit of being able, for example, to load workpiece 50 onto puck 200, provide heat through heaters 220, and achieve rapid stabilization of temperatures on workpiece 50 so that processing can begin quickly, to maximize system throughput. Without thermal communication allowing some heat to dissipate to thermal sink 230, temperatures reached by portions of puck 200 would decrease only as fast as other heat dissipation paths would allow.
In embodiments, heaters 220 are typically disposed in direct thermal communication with puck 200, while thermal sink 230 is in indirect thermal communication with puck 200, through heaters 220. It is advantageous that thermal sink 230 not be in direct thermal communication with puck 200, because such direct thermal communication can lead to thermal anomalies on the surface of puck 200 (e.g., puck 200 would have regions where temperature becomes close to the temperature of thermal sink 230, instead of being dominated by extra heat generated by heaters 220). Also, heaters 220 have sufficient heat generation capability that heat applied by heaters 220 can overwhelm the indirect thermal coupling of puck 200 with thermal sink 230, so that heaters 220 can raise the temperature of inner portion 212 and outer portion 214 of puck 200, even while some of the heat generated by heaters 200 dissipates into thermal sink 230. Thus, heat provided by heaters 220 can, but does not immediately, dissipate through thermal sink 230. In embodiments, degrees of thermal coupling among puck 200, heaters 220 and thermal sink 230 may be adjusted according to principles herein, in order to balance considerations such as temperature uniformity within each of the center and edge portions, rapidity of thermal stabilization, manufacturing complexity and cost, and overall energy consumption.
Yet another advantage of thermal sink 230 is to confine heat generated by heaters 220 to the vicinity of puck 200. That is, thermal sink 230 can provide a thermal upper limit for adjacent system components to protect such components from high temperatures generated at puck 200. This may improve mechanical stability of the system and/or prevent damage to temperature sensitive components.
Heaters 220 and thermal sink 230 may be implemented in various ways. In an embodiment, heaters 220 include several layers coupled together as subassemblies, which can then be further coupled with a 200 and (optionally) thermal sink 230 to form a wafer chuck assembly. Embodiments designed, assembled and operated as disclosed herein allow explicit temperature control of workpiece (e.g., wafer) edge regions relative to center regions, and facilitate processing with explicit center to edge temperature control that is typically not achievable with prior art systems.
Inner resistive heater 220-1 is illustrated in
In embodiments, heater trace layer 264 and buffer layer 266 are coupled within thin metal layers 260, 268 that help spread heat from heater trace layer 264 evenly across surfaces of heater 220-1. A thin, electrically insulating layer 262 is included to keep metal layer 260 from shorting heater trace layer 264; insulating layer 262 or insulating layer 266 may also act as a substrate for fabrication of heater trace layer 264 (see
Heater 220-1 couples with puck 200 via an optional layer 250, and with thermal sink 230 via further optional layer 270, as shown. Layers 250 and 270 promote thermal transfer between heater 220-1 and both puck 200 and thermal sink 230; material choices of layers 250 and 270 include thermally stable polymers. In an embodiment, optional layers 250, 270 are formed of layer of polymer having a bulk thermal conductivity of about 0.22 W/(m-K). Layers 250 and/or 270 may also be bondable to puck 200 and layer 260, and thermal sink 230 and layer 268 respectively, such that puck 200, thermal sink 230 may be bonded together with heaters 220-1 and 220-1. To accomplish this, puck 200, layer 250, heaters 220-1 and 220-2, layer 270 and thermal sink 230 may all be aligned in registration with one another, and bonded by compressing and/or heating.
In embodiments, thermal sink 230 provides a reference temperature for puck 200, while still allowing inner and outer resistive heaters 220-1 and 220-2 to provide center-to-edge temperature control for puck 200. Temperature of optional thermal sink 230 may be actively controlled. For example,
A further advantage of providing at least one thermal break 210 that intersects a top surface of puck 200 is that mechanical features may be disposed at least partially within the thermal break such that the features do not generate a thermal anomaly. For example, a wafer chuck commonly provides lift pins that can be used to raise a wafer to a small distance off of the chuck to facilitate access by wafer handling tools (typically using a paddle or other device that, after the wafer is raised, is inserted between the wafer and the chuck). However, the lift pins typically retract into holes in the chuck, and such holes can locally affect wafer temperature during processing. When a thermal break intersects a top surface of puck 200, a location already exists for such a mechanism to be placed without introducing a thermal anomaly.
Step 410 sets up equipment characteristics that are related to the first center-to-edge process variation, which will be produced at 420. For example, when 420 is expected to introduce the controlled variation, 410 may involve providing equipment parameters such as heater settings that will provide a controlled center-to-edge temperature variation. Equipment such as described in
Step 420 processes a product wafer with the first center-to-edge process variation. Step 422 measures one or more first center-to-edge characteristics on the product wafer, to generate data for equipment process control purposes, for correlation to yield or performance of the product wafer, and/or for use in correlating to information surrounding step 440, as described further below.
Step 430 sets up equipment characteristics that are related to the second center-to-edge process variation, which will be produced at step 440. For example, when 440 is expected to introduce the controlled variation, 430 may involve providing equipment parameters such as heater settings that will provide a controlled center-to-edge temperature variation. Equipment such as described in
Step 440 processes a product wafer with the second center-to-edge process variation. Also, although not shown in method 402, additional test wafers could certainly be processed in parallel with the product wafer. Step 442 measures one or more first center-to-edge characteristics on the product wafer, to generate data for equipment process control purposes, for correlation to yield or performance of the product wafer, and/or for use in correlating to information surrounding 420, as described above. Such measurements could also be performed on any test wafer that was processed in parallel with the product wafer, but in any case 442 will generally not further alter any condition present on the product wafer. That is, the results of 420 and 440 will be fixed in the product wafer at the conclusion of 440 irrespective of any further testing done.
Having described several embodiments, it will be recognized by those of skill in the art that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the invention. Additionally, a number of well-known processes and elements have not been described in order to avoid unnecessarily obscuring the present invention. Accordingly, the above description should not be taken as limiting the scope of the invention.
Processing of workpieces other than wafers may also benefit from improved processing uniformity, and are considered within the scope of the present disclosure. Thus, characterization of the chucks herein as “wafer chucks” for holding “wafers” should be understood as equivalent to chucks for holding workpieces of any sort, and “wafer processing systems” as similarly equivalent to processing systems.
Where a range of values is provided, it is understood that each intervening value, to the tenth of the unit of the lower limit unless the context clearly dictates otherwise, between the upper and lower limits of that range is also specifically disclosed. Each smaller range between any stated value or intervening value in a stated range and any other stated or intervening value in that stated range is encompassed. The upper and lower limits of these smaller ranges may independently be included or excluded in the range, and each range where either, neither or both limits are included in the smaller ranges is also encompassed within the invention, subject to any specifically excluded limit in the stated range. Where the stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.
As used herein and in the appended claims, the singular forms “a”, “an”, and “the” include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to “a process” includes a plurality of such processes and reference to “the electrode” includes reference to one or more electrodes and equivalents thereof known to those skilled in the art, and so forth. Also, the words “comprise,” “comprising,” “include,” “including,” and “includes” when used in this specification and in the following claims are intended to specify the presence of stated features, integers, components, or steps, but they do not preclude the presence or addition of one or more other features, integers, components, steps, acts, or groups.
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