Claims
- 1. A method of etching a thin film comprising oxidized and nonoxidized copper, comprising the steps of:
- providing a thin film comprising copper oxide and nonoxidized copper metal;
- disposing a mixture which comprises ammonium chloride and hydrogen peroxide on selected areas of the film to be etched so as to form a predetermined pattern thereon.
- 2. The method of claim 1, the film having a thickness prior to etching of between 300 and 3000 angstroms.
- 3. The method of claim 1, the film having a thickness prior to etching of between 500 and 1500 angstroms.
- 4. The method of claim 1, the film having a thickness prior to etching of between 600 and 1200 angstroms.
- 5. The method of claim 1, the mixture consisting essentially of ammonium chloride and hydrogen peroxide.
CROSS REFERENCE TO RELATED APPLICATIONS
This application is a continuation of application No. 07/010,873, filed Feb. 4, 1987, now U.S. Pat. No. 4,911,785.
US Referenced Citations (15)
Foreign Referenced Citations (3)
| Number |
Date |
Country |
| 0057528 |
Aug 1982 |
EPX |
| 0946588 |
Aug 1956 |
DEX |
| 2246891 |
May 1975 |
FRX |
Non-Patent Literature Citations (3)
| Entry |
| Feldstein et al., J. Electrochem. Soc., vol. 120, No. 12, pp. 1654-1657 (1973). |
| World Patent Index WPI 75-46589W/28. |
| Pat. Abst. Japan, vol. 9, No. 308 (P-410) [2031], (Dec. 4, 1985), (abstract of JP No. 60-140236(a)). |
Continuations (1)
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Number |
Date |
Country |
| Parent |
10873 |
Feb 1987 |
|