Claims
- 1. A CMOS inverter, comprising:
- at least one thin film transistor having a first gate and a first source; and
- second transistor means connected to and in a CMOS configuration with said at least one thin film transistor, said second transistor means having at least a second gate and a second drain;
- wherein said first gate and said second gate are connected together forming a single U-shaped electrode and serve as an input for the inverter, and said first source and second drain are connected together and serve as an output for the inverter;
- whereby a signal applied to the input is inverted at the output.
- 2. The CMOS inverter of claim 1, wherein the second transistor means is a thin film transistor.
- 3. The CMOS inverter of claim 1, wherein the first gate of the at least one thin film transistor serves as the second gate of the second transistor means.
- 4. The CMOS inverter of claim 2, wherein the first gate of the at least one thin film transistor serves as the second gate of the second transistor means.
Priority Claims (1)
Number |
Date |
Country |
Kind |
63-119919 |
May 1988 |
JPX |
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Parent Case Info
This is a division of application Ser. No. 07/351,758, filed on May 15, 1989, entitled ACTIVE MATRIX PANEL, currently pending.
US Referenced Citations (11)
Non-Patent Literature Citations (3)
Entry |
Young et al., IEE Transaction On Electronic Development, vol. 35, No. 4, Apr. 1988 "Avalanche Induced MOSFETS" pp. 426-431. |
Malhi et al., IEDM, pp. 107-110 "Novel SOICMOS" 1982. |
Colinge, Electronic Letts, 1986 vol. 22 No. 44, pp. 187-188 "Reduction Of Floating Substrate Effect In Thin-Film SOI MOSFETS". |
Divisions (1)
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Number |
Date |
Country |
Parent |
351758 |
May 1989 |
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