Thin film electrolyte for thin film batteries

Information

  • Patent Grant
  • 8268488
  • Patent Number
    8,268,488
  • Date Filed
    Friday, January 23, 2009
    15 years ago
  • Date Issued
    Tuesday, September 18, 2012
    11 years ago
Abstract
The invention relates to a solid-state lithium-ion thin-film electrolyte that, compared to the current state-of-the-art thin-film electrolyte, Lipon, exhibits an equal or larger electrochemical stability window (0-5.5 V vs. Li+/Li), an equal or smaller electronic conductivity (10−14 S/cm at 25° C.), the same ideal transference number for Li+ ions (t=1.000), and a 10× higher Li+ ion conductivity at −40° C. Latter provides thin-film batteries (TFBs) with at least a 5× higher power performance at −40° C. over the current state-of-the-art Lipon TFBs.
Description
FIELD OF THE INVENTION

The present invention relates to a solid-state lithium-ion thin-film electrolyte with, for example, increased lithium ion conductivity that lends itself preferably to higher power performance and extended shelf life in thin-film batteries and a method of fabricating the electrolyte.


BACKGROUND OF THE INVENTION

Solid-state lithium-ion thin-film batteries (TFBs) that are configured with a Lipon (Lithium phosphorus oxynitride—a potent lithium-ion thin-film electrolyte having the formula of ˜Li3.1PO3.3N0.5) electrolyte exhibit acceptable internal cell resistances over a wide temperature range while showing electrochemical stability in contact with very reducing electrodes, such as the metallic lithium anode, and very oxidizing electrodes, such as a charged Li0.5CoO2 cathode at 4.2V versus Li/Li+. In addition, Lipon has one of the lowest electronic conductivities of all known room-temperature lithium-ion electrolytes, thereby providing Lipon TFBs with a 10+ year shelf-life and an extremely low capacity loss per year (<1%) under ambient conditions.


Currently known lithium compounds, however, have internal cell impedances that can become undesirably large when Lipon TFBs are operated below 0° C., and in particular when employed in the −40° C. range, such as required in military or aerospace applications and by other government agencies. This characteristic is due to the bulk ionic conductivity of the Lipon electrolyte and its charge transfer resistances at both the cathode and the anode interface becoming undesirably large at low temperatures. The inverse of the internal cell impedance, the current rate capability of a cell, for instance, may be rated at 50 mA at 25° C. in the 4.2-2.0V voltage window for a standard single-cell 1 in2 TFB while increasing to more than 2000 mA for a few seconds at 100° C., but may be limited to 0.3 mA at −40° C.


From these performance data points, there exists a need to equip TFBs with an alternative, improved solid-state lithium-ion thin-film electrolyte. Particularly, there is a need for an electrolyte that possesses an equal or better electrochemical stability than Lipon versus highly reducing and oxidizing electrodes while providing a substantially enhanced low temperature performance.


SUMMARY OF THE INVENTION

The solid-state thin-film electrolyte of the present invention preferably exhibits, for example when compared to Lipon, an equal or larger electrochemical stability window (0-5.5 V vs. Li+/Li), an equal or smaller electronic conductivity (10−14 S/cm at 25° C.), the same ideal transference number for Li+ ions (t=1.000), and an equal or higher Li+ ion conductivity over the entire envisioned operation range of the battery (−50° C. to +200° C.).


In one embodiment of the present invention, a solid-state, inorganic electrolyte with glassy or amorphous morphology shows a lithium-ion conductivity of greater than 5*10−6 S/cm at 25° C. and has a chemical composition comprising at least the elements lithium, oxygen, nitrogen, and at least one element selected from the group of aluminum, silicon, phosphorus, sulfur, scandium, yttrium, lanthanum, zirconium, magnesium, and calcium. In a further embodiment, this electrolyte may be chemically stable in contact with metallic lithium. The electrolyte may also be chemically stable in contact with positive cathode materials that are charged to at least +3.9V versus a metallic lithium reference electrode.


In another embodiment, the electrolyte may comprise a thickness of less than 5 μm. In a further embodiment, the electrolyte may comprise a change in chemical composition between one electrolyte interface and the opposing other.


In another embodiment of the present invention, a method for fabricating, by physical vapor deposition (PVD), a solid-state, inorganic electrolyte is described. The method may be utilized to fabricate an electrolyte with glassy or amorphous morphology with lithium ion conductivity of greater than 5*10−6 S/cm at 25° C. and a chemical composition comprising at least the elements lithium, oxygen, nitrogen, and at least one element selected from the group of aluminum, silicon, phosphorus, sulfur, scandium, yttrium, lanthanum, zirconium, magnesium, and calcium. The method may further comprise changing the chemical composition of the electrolyte from one electrolyte interface to the other.


In another embodiment of the present invention, a specific glassy or amorphous electrolyte with the composition Li3(Sc2-xMx)(PO4-yNz)3 wherein M=Al and/or Y, x≦2, z≦8/3, and 2y=3z is provided, as described herein in greater detail below.


In yet another embodiment of the present invention, a specific glassy or amorphous electrolyte with the composition Li8.3.5xP1.5xZr1-xO6-yNz wherein x≦0.8, z≦4, and 2y=3z is provided, as described herein in greater detail below.


In yet another embodiment of the present invention, a specific glassy or amorphous electrolyte with the composition Li8-3xLaxZrO6-yNz wherein 0<x≦2, z≦4, 2y=3z is provided, as described herein in greater detail below.


In yet another embodiment of the present invention, a specific glassy or amorphous electrolyte with the composition Li6-0.75xP1.75xZr2-2xO7-7Nz wherein x≦0.8, z≦14/3, and 2y=3z is provided, as described herein in greater detail below.


In yet another embodiment of the present invention, a specific glassy or amorphous electrolyte with the composition Li3-3xP1-xAlxO4-4x-yNx+z wherein 0<x≦0.6, y≦1.6, and 2y=3z is provided, as described herein in greater detail below.


It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.







DETAILED DESCRIPTION OF THE INVENTION

It is to be understood that the present invention is not limited to the particular methodology, compounds, materials, manufacturing techniques, uses, and applications described herein, as these may vary. It is also to be understood that the terminology used herein is used for the purpose of describing particular embodiments only, and is not intended to limit the scope of the present invention. It must be noted that as used herein and in the appended claims, the singular forms “a,” “an,” and “the” include the plural reference unless the context clearly dictates otherwise. Thus, for example, a reference to “an element” is a reference to one or more elements and includes equivalents thereof known to those skilled in the art. Similarly, for another example, a reference to “a step” or “a means” is a reference to one or more steps or means and may include sub-steps and subservient means. All conjunctions used are to be understood in the most inclusive sense possible. Thus, the word “or” should be understood as having the definition of a logical “or” rather than that of a logical “exclusive or” unless the context clearly necessitates otherwise. Structures described herein are to be understood also to refer to functional equivalents of such structures. Language that may be construed to express approximation should be so understood unless the context clearly dictates otherwise.


Unless defined otherwise, all technical and scientific terms used herein have the same meanings as commonly understood by one of ordinary skill in the art to which this invention belongs. Preferred methods, techniques, devices, and materials are described, although any methods, techniques, devices, or materials similar or equivalent to those described herein may be used in the practice or testing of the present invention. Structures described herein are to be understood also to refer to functional equivalents of such structures.


All patents and other publications identified are incorporated herein by reference for the purpose of describing and disclosing, for example, the methodologies described in such publications that might be used in connection with the present invention. These publications are provided solely for their disclosure prior to the filing date of the present application. Nothing in this regard should be construed as an admission that the inventors are not entitled to antedate such disclosure by virtue of prior invention or for any other reason.


A wide electrochemical stability window can preferably be achieved when basing the chemical composition of the electrolyte of the present invention on a group of principal materials that are known to be either thermodynamically stable with, or least kinetically inert against (in other words, a reaction does not occur due to the existence of a large enough activation energy hindrance between the reaction candidates), metallic lithium or highly oxidizing environments or, most preferably, against both. Then, these base materials may be subjected to a combinatorial chemistry screening, that is, specific compositions of PVD fabricated multinary-element electrolyte compositions, and perhaps also multinary phases, of the principal group materials may be tested electrochemically in asymmetric polarization cells (Li/electrolyte/polarizable metal electrode) using the Hebb-Wagner method (see, for instance, Neudecker et al., 143 J. Electrochem. Soc. 2198 (1996) and Yu et al., 144 J. Electrochem. Soc. 524 (1997)) and cyclic voltammetry (see, for instance, Appetecchi et al., 145 J. Electrochem. Soc. 4126 (1998) and Abraham et al., 147 J. Electrochem. Soc. 1251 (2000)).


The PVD combinatorial chemistry screening may be easily and inexpensively accomplished by employing, for example, a magnetron sputter target (sputter-up configuration) that may be composed of a selected and readily available principal material, for instance Li3PO4, upon which flat pressed powder pellets of one or more different principal materials are placed. The so-constructed multinary element target may then be magnetron-sputtered, which will deposit a specific multinary film composition onto a given substrate.


The group of preferred principal materials comprise, but are not limited to, Li5AlO4, Li4SiO4, Li2SiO3, Li3PO4, Li2SO4, LiScO2, LiYO2, LiLaO2, Li6Zr2O7, Li8ZrO6, Al2O3, SiO2, P2O5, Y2O3, La2O3, ZrO2, Li2O, MgO, and CaO (cf., Neudecker et al., 143 J. Electrochem. Soc. 2198 (1996)). The PVD deposition of these materials may preferably result in predominantly glassy or amorphous thin films (e.g., materials that exhibit a crystallinity/crystallographic long-range order of about 0-100 Å or more) whose composition may be further modified and fine-tuned by the introduction of, for example, preferably, nitride doping through variations in the sputter atmosphere, such as, for instance, sputtering in Ar/N2 mixtures.


To maximize the power performance of a thin cell battery, it is preferred to keep the internal cell resistance as small as possible. Thickness of the thin-film electrolyte is one factor that can contribute to internal cell resistance. For example, the internal cell resistance of a Lipon cell at 25° C. increases by at least a factor of three when going from 1 μm Lipon to 5 μm Lipon. Thus, it is preferable to have an electrolyte layer of a minimum thickness. In addition, thin-film layers are fairly cost-sensitive compared to battery materials/layers fabricated by wet chemistry, such as the cell phone batteries.


An electrolyte in a TFB may, for example, preferably be only about 1 μm thick. Due to this thinness, particularly in a TFB that is, for example, equipped with a metallic lithium anode, the electrolyte is preferably not crystalline or exhibit any substantial grain boundary morphology. Such a condition may allow or potentially cause metallic lithium anode material to creep along the electrolyte grain boundaries and eventually reach the cathode, thereby resulting in a short-circuit within the TFB. The reason for this potential creep tendency of metallic lithium along the grain boundaries of the electrolyte lies in the higher impurity concentration and off-composition in those electrolyte locations with which the metallic lithium partially reacts while forming pathways for additional metallic lithium to follow. This creep phenomenon is analogous to dendrite growth in liquid or polymeric electrolyte technology.


Although some embodiments of the present invention contain a single-phase electrolyte material that preferably can withstand direct contact (i.e, among other things, avoid the creeping problem discussed above) to both the highly reducing anode and the highly oxidizing cathode in high-performance TFBs, other embodiments contain a gradiented or stepped thin-film electrolyte composition to serve this purpose. This gradiented or stepped electrolyte may be designed to be stable with, or inert against, metallic lithium at the anode interface while gradienting or step-changing its composition in a suitable manner along its thickness axis, thereby rendering it stable with, or inert against, a highly oxidizing cathode such as, for example, one that is charged to at least +3.9V in comparison to a metallic lithium reference electrode. The gradienting or composition stepping may be accomplished, for example, through sputter depositing the thin-film electrolyte either from one sputter target by changing the sputter gas composition or by using more than one sputter targets over which the growing thin-film electrolyte is placed in a sequential or alternating manner. Relative to the finished electrolyte film, the gradiented principle was realized by Eveready (Jones et al., 53-56 Solid State Ionics 628 (1992)) and ORNL (Bates, U.S. Pat. No. 5,314,765 (1994)) by interposing a protection layer between the reducing anode and the solid state electrolyte, which could be considered an electrolyte with different interface compositions.


A further, in certain circumstances, relatively important or useful property of the electrolyte of the present invention is, for example, its potential increased Li+ ion conductivity compared to Lipon. This increased Li+ ion conductivity may provide TFBs with a much improved low temperature power performance. The theory for solid-state lithium-ion electrolytes was mainly developed between about 1970-1995; the latter date being associated with the introduction of the Lipon electrolyte into TFBs. In this time frame, papers on entirely inorganic, solid-state Li+ ion electrolytes from A. R. West, R. A. Huggins, C. C. Liang, P. Hagenmuller, J. B. Bates, and M. Greenblatt (to name a few) taught certain techniques for building those electrolytes and how to change the parameters of the Li+ ion conductivity, which in turn is given by

σLi+=A/T*exp(−Ea/RT)

wherein σLi+ is the Li+ ion conductivity at a given temperature T[K], R represents the gas constant while the factor A denotes the pre-exponential factor, a measure for the theoretically maximally achievable Li+ ion conductivity. This conductivity would be realized if the activation enthalpy for Li+ ion conduction, Ea (chemical barrier inside the electrolyte network for Li+ ion conduction), did not exist in the solid-state glass (or crystalline) network of the electrolyte, which then under TFB operation would allow all Li+ ion jump attempts from one electrolyte network site to another to become successful.


In the instant thin-film electrolyte compositions of certain embodiments, the activation enthalpy for Li+ ion conduction Ea may be reduced by adequate electrolyte network vacancy and interstitial doping approaches (e.g., aliovalent doping of Li3PO4 with Li4SiO4) as well as by reducing the pinning electrostatic forces (e.g., replacing some of the more electronegative oxide ions by less electronegative nitride ions, as very successfully realized in Lipon over Li3PO4) that the Li+ ion encounters when moving through the electrolyte network. Because all sputter deposited thin-film electrolyte compositions may, in certain embodiments, be expected to be glassy or amorphous in their as-fabricated state, which by definition is more disordered than their crystalline counterparts, a substantial Li+ ion conductivity boost may be anticipated, as previously demonstrated for crystalline Li3PO4 (Y-W. Hu et al., 11 Materials Research Bulletin, 1227 (1976)) versus sputter deposited glassy Li3PO4 (Bates et al., 53-56 Solid State Ionics, 647 (1992)).


The additional desirable properties, a low electronic conductivity, a high temperature stability, and a transference number of unity, are preferably given by the specific choice of the principal materials listed above, because they are preferably (i) high-temperature compounds, and so are their multinary derivatives, such as Li4SiO4 doped Li3PO4, (ii) strong electronic insulators, and (iii) composed of highly charged, and thus immobile ions except for the singly charged, small and thus very mobile Li+ ion, which, for example, results in the Li+ ion being the only mobile species in the electrolyte network, which in turn leads to a Li+ ion transference number of unity.


As mentioned above, the charge transfer resistances to both the anode and cathode may contribute substantially to the overall cell impedance. One exemplary approach regarding how to limit these cell impedance contributors to a minimum may be to maximize the contact area at the thin-film electrolyte interfaces by optimizing the thin-film deposition process of both the thin-film electrolyte onto the cathode and subsequently the anode deposition process onto the thin-film electrolyte surface.


Previously crystalline Li3(Sc2-xMx)(PO4)3 (M=Al3+, Y3+) was found to potentially exhibit Li+ ion conductivities in excess of 10−5 S/cm at room temperature for x=0.4, which is approximately more than five times the Li+ ion conductivity of Lipon (Amatucci et al., Solid State Ionics 60 (1993) 357). Through sputter depositing Li3(Sc2-xMx)(PO4)3 (M=Al3+, Y3+), a glassy or amorphous morphology of this electrolyte material may be achieved, which may be beneficial when using it in thin film batteries in conjunction with the metallic lithium anode as explained above while, in addition, the glassiness alone may increase the Li+ ion conductivity of the electrolyte by more than one order of magnitude. In certain embodiments, doping the composition with nitride ions that may replace some of the oxygen ions in the glass network may enhance the Li+ ion conductivity of the thin-film electrolyte through reduction of the activation enthalpy for Li+ ion conduction Ea, in addition to rendering the electrolyte material more stable with, or inert against, a metallic lithium anode. Although the use of a single-piece sputter target of this 5 to 7 element material may be preferred, one may sputter deposit from a suitable sputter target in reactive N2 atmosphere, with or without any additional admixed gases such as, for instance, argon. A suitable sputter target may be a readily available Li3PO4 sputter target onto whose sputter surface a specific number of pressed powder pellets of Al2O3, Sc2O3, and Y2O3 of a given footprint are located in order to attain the desired film composition and electrochemical properties in the Li—Sc—Al—Y—P—O—N system. The resulting, so—deposited, typically glassy, thin-film electrolyte may be described to have the composition Li3(Sc2-xMx)(PO4-yNz)3 wherein M=Al and/or Y, x≦2, z≦8/3, and 2y=3z.


In another embodiment of the present invention, the parent compound Li8ZrO6 (cf., e.g., Scholder et al., Zeitschrift für Anorganische and Allgemeine Chemie, Band 362 (1968) 149; Delmas et al., Materials Research Bulletin 14 (1979) 619; Ohno et al., Journal of Nuclear Materials 132 (1985) 222), which is stable against both metallic lithium and high oxidation environments, that is, high positive voltages against a lithium reference electrode, may be aliovalently doped at the cation and anion positions in order to substantially enhance its lithium ionic conductivity. Preferred doping materials comprise Li3PO4, which can formally be rewritten as “Li4.5P1.5O6”, and nitrogen, wherein the latter replaces some of the oxide ions in the so-doped, final compound whose composition may be described as (1-x) Li8ZrO6*xLi4.5P1.5O6:N or, more precisely, Li8-3.5xP1.5xZr1-xO6-yNz wherein x≦0.8, z≦4, and 2y=3z.


The nitrogen doping may be accomplished in a thin-film electrolyte that may be fabricated through a reactive sputter deposition from a sputter target material of the composition (1-x) Li8ZrO6*xLi4.5P1.5O6 in a reactive N2 atmosphere, with or without any additional admixed gases such as, for instance, argon. This film may be glassy or amorphous and therefore exhibit no substantial grain boundaries, which is the preferred morphology for some embodiments of the thin-film electrolytes as explained above.


Instead of the Li3PO4 doping approach from above, which aliovalently doped the parent compound at the high-valence position, the zirconium position, one may aliovalently dope Li8ZrO6 at the lithium position with, for instance, lanthanum, thereby arriving at chemical compositions that may be described by Li8-3xLaxZrO6-yNz wherein z≦4, 2y=3z, and preferably 0<x≦2.


The nitrogen doping may be accomplished in a thin-film electrolyte that may be fabricated through a reactive sputter deposition from a sputter target material of the composition Li8-3xLaxZrO6 in a reactive N2 atmosphere, with or without any additional admixed gases such as, for instance, argon. This film may be glassy or amorphous and therefore exhibit no substantial grain boundaries, which is the preferred morphology for thin-film electrolytes as explained above.


The substantially glassy or amorphous compound of the present invention Li8-3xLaxZrO6-yNz wherein z<4, 2y=3z, and preferably 0<x≦2 that does not show substantial grain boundaries and thus differs substantially from the specific crystalline Garnet compounds that Weppner et al. describes in WO 2005/085138 A1 US 2007/0148553, and DE 10 2007 030 604 A1. These crystalline Garnet compounds may not be used in thin-film batteries wherein the thin-film electrolyte may be thinner than or equal to 5 μm. Otherwise, specifically lithium from the anode may creep along the crystalline grain boundaries of this rather thin electrolyte layer and eventually create an electronic leakage current path or even short-circuit with the cathode, resulting in destruction of the thin-film battery. Furthermore, PVD deposited oxide and oxy-nitride films of the present invention typically deposit in glassy or amorphous morphology so that an undesirable heat treatment would be necessary to crystallize these films, which in itself, however, is undesirable for the reasons given above. Notwithstanding the undesired crystalline morphology for thin-film electrolytes, a crystallizing heat treatment may additionally cause an unwanted chemical reaction of the electrolyte with the anode and/or cathode. As previously discussed, crystalline thin-film electrolyte films have numerous drawbacks that are preferably to be avoided. On the other hand, PVD processes, such as magnetron sputter deposition, lead to glassy or amorphous thin-film electrolytes that may not need any further heat treatment but, in view of best TFB operation, may already be their preferred morphological state immediately after their fabrication.


In yet another embodiment of the present invention one may use a related lithium zirconium oxide as a starting compound, such as Li6Zr2O7 (cf. Abrahams et al., Journal of Solid State Chemistry 104 (1993) 197), which could be considered to formally consist of 3Li2O*2ZrO2 or (1.5Li2O*ZrO2)2, which therefore possesses only 1.5/4 or 38% of the formal Li2O residing in Li8ZrO6, which in turn may formally be described as 4Li2O*ZrO2. When doped with Li3PO4 and nitrogen, we obtain compounds whose formulae can be represented by Li6-0.75xP1.75xZr2-2xO7-yNz wherein z≦14/3, 2y=3z, and preferably x≦0.8.


Nitrogen doping may be accomplished in a thin-film electrolyte that may be fabricated through a reactive sputter deposition from a sputter target material of the composition Li6-0.75xP1.75xZr2-2xO7 in a reactive N2 atmosphere, with or without any additional admixed gases such as, for instance, argon. This film may be glassy or amorphous and therefore exhibit no substantial grain boundaries, which is the preferred morphology for thin-film electrolytes as explained above.


Yet another embodiment of the present invention relates to AlN doped Li3PO4, which introduces vacancies at the Li+ ion cation position and the oxygen anion position while replacing some of the Li+ ion pinning, electron rich oxygen ions and their 2p atomic orbitals with the less Li+ ion pinning, less electron rich, 2p nitrogen orbitals, according to the formula Li3-3xP1-xAlxO4-4xNx wherein preferably 0<x≦0.6.


Sputtering AlN doped Li3PO4 material, for instance, in a reactive N2 atmosphere, with or without any additional admixed gases such as, for instance, argon, may allow the fabrication of an electrolyte film that is further doped with nitrogen and may be described by a composition of Li3-3xP1-xAlxO4-4x-yNx+z wherein preferably 0<x≦0.6, y≦1.6, and 2y=3z. This film may be glassy or amorphous and therefore exhibit no substantial grain boundaries, which is the preferred morphology for thin-film electrolytes as explained above.


All of the various compositions of the thin-film electrolyte of the present invention are thermally stable up to at least 150° C. while some specific compositions may be thermally stable well above 300° C. or even above 500° C. This thermal property may allow the use of the thin-film electrolyte of the present invention in TFBs that are exposed to higher (up to 150° C.) to high (above 150° C.) temperature environments for extended periods of time, such as days or even months or years. It is to be understood, however, that the thermal stability of a TFB is not solely dependent on the thermal stability of the electrolyte but may also be determined by, for instance, the thermal stability of the packaging of the TFB or the state of charge of the positive cathode material when exposed to higher or high temperatures.


EXAMPLES
Example 1

In a particular embodiment of the present invention, the Li+ ion conductivity of the electrolyte is demonstrated in a conductivity test cell using two sandwiching inert metal electrodes. The electrolyte exhibits an improved activation enthalpy Ea of less than 0.5 eV (compared to Lipon Ea=0.514 eV) that leads to a Li+ ion conductivity of greater than 5*10−6 S/cm at 25° C. The electrolyte possesses a Li+ ion conductivity at 0° C. of 1.48*10−6 S/cm, which is five times higher than that of Lipon (2.95*10−7 S/cm) and ten times higher (8.1*10−8 S/cm) at −40° C. (Lipon: 8.1*10−9 S/cm). The electrolyte of the present invention has at least an electrochemical stability window from 0-5.5V vs. Li+/Li before the electrolyte breaks down and shows a substantial electronic conductivity of more than 1*10−6 S/cm.


Example 2

In a further embodiment, a 1 in2 large TFB fabricated with the electrolyte of the present invention supplies 700 μAh at ½ C rate at 25° C. in the voltage range 4.2-2.0V and delivers 250 μAh at 100 mA (140 C rate) at the same temperature and within the same voltage window. This TFB is fabricated onto 50 μm metal foil substrate, which also serves as the positive terminal, together with 0.5 μm conductive barrier layer, 3.5 μm LiCoO2 positive cathode, 1.2 μm electrolyte of the present invention, ˜9 μm Li anode, and a standard metal foil encapsulation.


Example 3

A further embodiment of the present invention encompasses fabricated TFBs that supply 700 μAh at ½ C rate at 25° C. in the voltage range 4.2-2.0V and are capable of delivering a continuous current of 0.4 mA within the same voltage window but at −40° C.


Example 4

The thin-film electrolyte of the composition Li3(ScAl)(PO3.4N0.4)3, formally comprising Li3PO4*P2O5*1/2Sc2O3*1/2Al2O3:N, is fabricated in a RF magnetron sputter deposition using “sputter-up” configuration in an 10 mTorr N2 reactive atmosphere onto a graphite substrate by employing a 4 inch diameter Li3PO4 sputter target whose sputter surface is covered by approximately 33% with about 2 mm thick and about 1 cm2 in diameter large, pressed and sintered powder pellets of P2O5, by approximately 17% with about 2 mm thick and about 1 cm2 in diameter large, pressed and sintered powder pellets of Al2O3, and by approximately 17% with about 2 mm thick and about 1 cm2 in diameter large, pressed and sintered powder pellets of Sc2O3. The resulting, deposited thin-film electrolyte film at a distance of 7.5 cm from the Li3PO4 target surface is XRD amorphous and may be analyzed by quantitative EDS and/or quantitative RBS to exhibit a Sc:Al:P:O:N stoichiometric ratio of 1:1:1:3.4:0.4. The stoichiometric factor of lithium may be obtained via back-calculation using the chemical electro-neutrality rule and the known formal valence states of Li(+1), Sc(+3), Al(+3), P(+5), O(−2), and N(−3).


Example 5

The thin-film electrolyte of Example 4 may be heat treated in an inert argon atmosphere continuously at 150° C. for 7 days without substantially changing its Li:Sc:Al:P:O:N stoichiometric ratio of 3:1:1:1:3.4:0.4.


The embodiments described above are exemplary only. One skilled in the art may recognize variations from the embodiments specifically described here, which are intended to be within the scope of this disclosure. As such, the invention is limited only by the following claims. Thus, it is intended that the present invention cover the modifications of this invention provided they come within the scope of the appended claims and their equivalents. Further, specific explanations of theories regarding the formation or performance of electrochemical devices according to the present invention are presented for explanation only and are not to be considered limiting with respect to the scope of the present disclosure or the claims.

Claims
  • 1. A solid-state, inorganic, electrolyte comprising: a chemical composition described by Li3(Sc2-xMx)(PO4-yNz)3 wherein x≦2, 0<z≦8/3, 2y=3z, and M is selected from the group of Al, Y, and Al1-aYa wherein a <1.
  • 2. A solid-state, inorganic, electrolyte comprising: a chemical composition described by Li8-3.5xP1.5xZr1-xO6-yNz wherein x≦0.8, z≦4, and 2y=3z.
  • 3. A solid-state, inorganic, electrolyte comprising: a chemical composition described by Li8-3xLaxZrO6-yNz wherein 0<x≦2, z≦4, and 2y=3z.
  • 4. A solid-state, inorganic, electrolyte comprising: a chemical composition described by Li6-0.75xP1.75xZr2-2xO7-yNz wherein x≦0.8, z≦14/3, and 2y=3z.
  • 5. A solid-state, inorganic, electrolyte comprising: a chemical composition described by Li3-3xP1-xAlxO4-4x-yNx+z wherein 0<x≦0.6, y<1.6, and 2y=3z.
  • 6. The electrolyte of claim 1, wherein said electrolyte has a crystallinity of about 0-100 Å, and has a lithium ion conductivity of greater than 5*10−6 S/cm at 25° C.
  • 7. The electrolyte of claim 1, further comprising at least one element selected from the group of silicon, sulfur, lanthanum, zirconium, magnesium, and calcium.
  • 8. The electrolyte of claim 2, wherein said electrolyte has a crystallinity of about 0-100 Å, and has a lithium ion conductivity of greater than 5*10−6 S/cm at 25° C.
  • 9. The electrolyte of claim 2, further comprising at least one element selected from the group of aluminum, silicon, sulfur, scandium, yttrium, lanthanum, magnesium, and calcium.
  • 10. The electrolyte of claim 3, wherein said electrolyte has a crystallinity of about 0-100 Å, and has a lithium ion conductivity of greater than 5*10−6 S/cm at 25° C.
  • 11. The electrolyte of claim 3, further comprising at least one element selected from the group of aluminum, silicon, phosphorus, sulfur, scandium, yttrium, magnesium, and calcium.
  • 12. The electrolyte of claim 4, wherein said electrolyte has a crystallinity of about 0-100 Å, and has a lithium ion conductivity of greater than 5*10−6 S/cm at 25° C.
  • 13. The electrolyte of claim 4, further comprising at least one element selected from the group of aluminum, silicon, sulfur, scandium, yttrium, lanthanum, magnesium, and calcium.
  • 14. The electrolyte of claim 5, wherein said electrolyte has a crystallinity of about 0-100 Å, and has a lithium ion conductivity of greater than 5*10−6 S/cm at 25° C.
  • 15. The electrolyte of claim 5, further comprising at least one element selected from the group of silicon, sulfur, scandium, yttrium, lanthanum, zirconium, magnesium, and calcium.
  • 16. The electrolyte of claim 5 further adapted to be substantially kinetically inert with a metallic lithium anode.
  • 17. The electrolyte of claim 5 further adapted to be substantially kinetically inert with a positive cathode charged to a potential of about +3.9V, said potential measured in comparison to a metallic lithium reference electrode.
  • 18. The electrolyte of claim 5 further adapted to be substantially thermally stable at ambient temperatures up to about 150° C.
  • 19. The electrolyte of claim 5 further adapted to be substantially kinetically inert with metallic lithium at ambient temperatures of up to about 150° C.
  • 20. The electrolyte of claim 5 further adapted to be substantially kinetically inert with positive cathode materials that are charged to a potential of about +3.9V at ambient temperatures of up to about 150° C., said potential measured in comparison to a metallic lithium reference electrode.
  • 21. The electrolyte of claim 5 further comprising a thickness of said electrolyte of less than about 5 μm.
  • 22. The electrolyte of claim 5 wherein said electrolyte further comprises: a first electrolyte-electrode interface, anda second electrolyte-electrode interface,wherein said first and second electrolyte-electrode interfaces have different chemical compositions.
RELATED APPLICATIONS

The present application is related to and claims the benefit under 35 U.S.C. §119 of U.S. provisional patent application Ser. No. 61/022,904, entitled “Thin Film Electrolyte for Thin Film Batteries,” filed Jan. 23, 2008, and is a continuation-in-part, and claims the benefit under 35 U.S.C. §120, of U.S. patent application Ser. No. 12/339,361, entitled “Method for Sputter Targets for Electrolyte Films,” filed Dec. 19, 2008, which claims the benefit under 35 U.S.C. §119 of U.S. provisional patent application Ser. No. 61/016,038, entitled “Method for Sputter Targets for Electrolyte Films,” filed Dec. 21, 2007, all of which are incorporated herein in their entirety by reference.

US Referenced Citations (781)
Number Name Date Kind
712316 Loppe et al. Oct 1902 A
2970180 Urry Jan 1961 A
3309302 Heil Mar 1967 A
3616403 Collins et al. Oct 1971 A
3790432 Fletcher et al. Feb 1974 A
3797091 Gavin Mar 1974 A
3850604 Klein Nov 1974 A
3939008 Longo et al. Feb 1976 A
4082569 Evans, Jr. Apr 1978 A
4111523 Kaminow et al. Sep 1978 A
4127424 Ullery, Jr. Nov 1978 A
4226924 Kimura et al. Oct 1980 A
4283216 Brereton Aug 1981 A
4318938 Barnett et al. Mar 1982 A
4328297 Bilhorn May 1982 A
4437966 Hope et al. Mar 1984 A
4442144 Pipkin Apr 1984 A
4467236 Kolm et al. Aug 1984 A
4481265 Ezawa et al. Nov 1984 A
4518661 Rippere May 1985 A
4555456 Kanehori et al. Nov 1985 A
4572873 Kanehori et al. Feb 1986 A
4587225 Tsukuma et al. May 1986 A
4619680 Nourshargh et al. Oct 1986 A
4645726 Hiratani et al. Feb 1987 A
4664993 Sturgis et al. May 1987 A
4668593 Sammells May 1987 A
RE32449 Claussen Jun 1987 E
4672586 Shimohigashi et al. Jun 1987 A
4710940 Sipes, Jr. Dec 1987 A
4728588 Noding et al. Mar 1988 A
4740431 Little Apr 1988 A
4756717 Sturgis et al. Jul 1988 A
4785459 Baer Nov 1988 A
4826743 Nazri May 1989 A
4865428 Corrigan Sep 1989 A
4878094 Balkanski Oct 1989 A
4903326 Zakman et al. Feb 1990 A
4915810 Kestigian et al. Apr 1990 A
4964877 Keister et al. Oct 1990 A
4977007 Kondo et al. Dec 1990 A
4978437 Wirz Dec 1990 A
5006737 Fay Apr 1991 A
5019467 Fujiwara May 1991 A
5030331 Sato Jul 1991 A
5035965 Sangyoji et al. Jul 1991 A
5055704 Link et al. Oct 1991 A
5057385 Hope et al. Oct 1991 A
5085904 Deak et al. Feb 1992 A
5096852 Hobson Mar 1992 A
5100821 Fay Mar 1992 A
5107538 Benton et al. Apr 1992 A
5110694 Nagasubramanian et al. May 1992 A
5110696 Shokoohi et al. May 1992 A
5119269 Nakayama Jun 1992 A
5119460 Bruce et al. Jun 1992 A
5124782 Hundt et al. Jun 1992 A
5147985 DuBrucq Sep 1992 A
5153710 McCain Oct 1992 A
5169408 Biggerstaff et al. Dec 1992 A
5171413 Arntz et al. Dec 1992 A
5173271 Chen et al. Dec 1992 A
5174876 Buchal et al. Dec 1992 A
5180645 Moré Jan 1993 A
5187564 McCain Feb 1993 A
5196041 Tumminelli et al. Mar 1993 A
5196374 Hundt et al. Mar 1993 A
5200029 Bruce et al. Apr 1993 A
5202201 Meunier et al. Apr 1993 A
5206925 Nakazawa et al. Apr 1993 A
5208121 Yahnke et al. May 1993 A
5217828 Sangyoji et al. Jun 1993 A
5221891 Janda et al. Jun 1993 A
5225288 Beeson et al. Jul 1993 A
5227264 Duval et al. Jul 1993 A
5237439 Misono et al. Aug 1993 A
5252194 Demaray et al. Oct 1993 A
5262254 Koksbang et al. Nov 1993 A
5273608 Nath Dec 1993 A
5287427 Atkins et al. Feb 1994 A
5296089 Chen et al. Mar 1994 A
5300461 Ting Apr 1994 A
5303319 Ford et al. Apr 1994 A
5306569 Hiraki Apr 1994 A
5307240 McMahon Apr 1994 A
5309302 Vollmann May 1994 A
5314765 Bates May 1994 A
5326652 Lake Jul 1994 A
5326653 Chang Jul 1994 A
5338624 Gruenstern et al. Aug 1994 A
5338625 Bates et al. Aug 1994 A
5342709 Yahnke et al. Aug 1994 A
5355089 Treger et al. Oct 1994 A
5360686 Peled et al. Nov 1994 A
5362579 Rossoll et al. Nov 1994 A
5381262 Arima et al. Jan 1995 A
5387482 Anani Feb 1995 A
5401595 Kagawa et al. Mar 1995 A
5403680 Otagawa et al. Apr 1995 A
5411537 Munshi et al. May 1995 A
5411592 Ovshinsky et al. May 1995 A
5419982 Tura et al. May 1995 A
5427669 Drummond Jun 1995 A
5435826 Sakakibara et al. Jul 1995 A
5437692 Dasgupta et al. Aug 1995 A
5445856 Chaloner-Gill Aug 1995 A
5445906 Hobson et al. Aug 1995 A
5448110 Tuttle et al. Sep 1995 A
5449576 Anani Sep 1995 A
5455126 Bates et al. Oct 1995 A
5457569 Liou et al. Oct 1995 A
5458995 Behl et al. Oct 1995 A
5464692 Huber Nov 1995 A
5464706 Dasgupta et al. Nov 1995 A
5470396 Mongon et al. Nov 1995 A
5472795 Atita Dec 1995 A
5475528 LaBorde Dec 1995 A
5478456 Humpal et al. Dec 1995 A
5483613 Bruce et al. Jan 1996 A
5493177 Muller et al. Feb 1996 A
5498489 Dasgupta et al. Mar 1996 A
5499207 Miki et al. Mar 1996 A
5501918 Gruenstern et al. Mar 1996 A
5504041 Summerfelt Apr 1996 A
5512147 Bates et al. Apr 1996 A
5512387 Ovshinsky Apr 1996 A
5512389 Dasgupta et al. Apr 1996 A
5538796 Schaffer et al. Jul 1996 A
5540742 Sangyoji et al. Jul 1996 A
5547780 Kagawa et al. Aug 1996 A
5547782 Dasgupta et al. Aug 1996 A
5552242 Ovshinsky et al. Sep 1996 A
5555127 Abdelkader et al. Sep 1996 A
5561004 Bates et al. Oct 1996 A
5563979 Bruce et al. Oct 1996 A
5565071 Demaray et al. Oct 1996 A
5567210 Bates et al. Oct 1996 A
5569520 Bates Oct 1996 A
5582935 Dasgupta et al. Dec 1996 A
5591520 Migliorini et al. Jan 1997 A
5597660 Bates et al. Jan 1997 A
5597661 Takeuchi et al. Jan 1997 A
5599355 Nagasubramanian et al. Feb 1997 A
5601952 Dasgupta et al. Feb 1997 A
5603816 Demaray et al. Feb 1997 A
5607560 Hirabayashi et al. Mar 1997 A
5607789 Treger et al. Mar 1997 A
5612152 Bates et al. Mar 1997 A
5612153 Moulton et al. Mar 1997 A
5613995 Bhandarkar et al. Mar 1997 A
5616933 Li Apr 1997 A
5618382 Mintz et al. Apr 1997 A
5625202 Chai Apr 1997 A
5637418 Brown et al. Jun 1997 A
5643480 Gustavsson et al. Jul 1997 A
5644207 Lew et al. Jul 1997 A
5645626 Edlund et al. Jul 1997 A
5645960 Scrosati et al. Jul 1997 A
5654054 Tropsha et al. Aug 1997 A
5654984 Hershbarger et al. Aug 1997 A
5658652 Sellergren Aug 1997 A
5660700 Shimizu et al. Aug 1997 A
5665490 Takeuchi et al. Sep 1997 A
5667538 Bailey Sep 1997 A
5677784 Harris Oct 1997 A
5679980 Summerfelt Oct 1997 A
5681666 Treger et al. Oct 1997 A
5686360 Harvey, III et al. Nov 1997 A
5689522 Beach Nov 1997 A
5693956 Shi et al. Dec 1997 A
5702829 Paidassi et al. Dec 1997 A
5705293 Hobson Jan 1998 A
5716728 Smesko Feb 1998 A
5718813 Drummond et al. Feb 1998 A
5719976 Henry et al. Feb 1998 A
5721067 Jacobs et al. Feb 1998 A
RE35746 Lake Mar 1998 E
5731661 So et al. Mar 1998 A
5738731 Shindo et al. Apr 1998 A
5742094 Ting Apr 1998 A
5755938 Fukui et al. May 1998 A
5755940 Shindo May 1998 A
5757126 Harvey, III et al. May 1998 A
5762768 Goy et al. Jun 1998 A
5763058 Isen et al. Jun 1998 A
5771562 Harvey, III et al. Jun 1998 A
5776278 Tuttle et al. Jul 1998 A
5779839 Tuttle et al. Jul 1998 A
5790489 O'Connor Aug 1998 A
5792550 Phillips et al. Aug 1998 A
5805223 Shikakura et al. Sep 1998 A
5811177 Shi et al. Sep 1998 A
5814195 Lehan et al. Sep 1998 A
5830330 Lantsman Nov 1998 A
5831262 Greywall et al. Nov 1998 A
5834137 Zhang et al. Nov 1998 A
5841931 Foresi et al. Nov 1998 A
5842118 Wood, Jr. Nov 1998 A
5845990 Hymer Dec 1998 A
5847865 Gopinath et al. Dec 1998 A
5849163 Ichikawa et al. Dec 1998 A
5851896 Summerfelt Dec 1998 A
5853830 McCaulley et al. Dec 1998 A
5855744 Halsey et al. Jan 1999 A
5856705 Ting Jan 1999 A
5864182 Matsuzaki Jan 1999 A
5865860 Delnick Feb 1999 A
5870273 Sogabe et al. Feb 1999 A
5874184 Takeuchi et al. Feb 1999 A
5882721 Delnick Mar 1999 A
5882946 Otani Mar 1999 A
5889383 Teich Mar 1999 A
5895731 Clingempeel Apr 1999 A
5897522 Nitzan Apr 1999 A
5900057 Buchal et al. May 1999 A
5909346 Malhotra et al. Jun 1999 A
5916704 Lewin et al. Jun 1999 A
5923964 Li Jul 1999 A
5930046 Solberg et al. Jul 1999 A
5930584 Sun et al. Jul 1999 A
5942089 Sproul et al. Aug 1999 A
5948215 Lantsmann Sep 1999 A
5948464 Delnick Sep 1999 A
5948562 Fulcher et al. Sep 1999 A
5952778 Haskal et al. Sep 1999 A
5955217 Lerberghe Sep 1999 A
5961672 Skotheim et al. Oct 1999 A
5961682 Lee et al. Oct 1999 A
5966491 DiGiovanni Oct 1999 A
5970393 Khorrami et al. Oct 1999 A
5973913 McEwen et al. Oct 1999 A
5977582 Flemming et al. Nov 1999 A
5982144 Johnson et al. Nov 1999 A
5985484 Young et al. Nov 1999 A
5985485 Ovshinsky et al. Nov 1999 A
6000603 Koskenmaki et al. Dec 1999 A
6001224 Drummond et al. Dec 1999 A
6004660 Topolski et al. Dec 1999 A
6007945 Jacobs et al. Dec 1999 A
6013949 Tuttle Jan 2000 A
6019284 Freeman et al. Feb 2000 A
6023610 Wood, Jr. Feb 2000 A
6024844 Drummond et al. Feb 2000 A
6025094 Visco et al. Feb 2000 A
6028990 Shahani et al. Feb 2000 A
6030421 Gauthier et al. Feb 2000 A
6033768 Muenz et al. Mar 2000 A
6042965 Nestler et al. Mar 2000 A
6045626 Yano et al. Apr 2000 A
6045652 Tuttle et al. Apr 2000 A
6045942 Miekka et al. Apr 2000 A
6046081 Kuo Apr 2000 A
6046514 Rouillard et al. Apr 2000 A
6048372 Mangahara et al. Apr 2000 A
6051114 Yao et al. Apr 2000 A
6051296 McCaulley et al. Apr 2000 A
6052397 Jeon et al. Apr 2000 A
6057557 Ichikawa May 2000 A
6058233 Dragone May 2000 A
6071323 Kawaguchi Jun 2000 A
6075973 Greeff et al. Jun 2000 A
6077106 Mish Jun 2000 A
6077642 Ogata et al. Jun 2000 A
6078791 Tuttle et al. Jun 2000 A
6080508 Dasgupta et al. Jun 2000 A
6080643 Noguchi et al. Jun 2000 A
6093944 VanDover Jul 2000 A
6094292 Goldner et al. Jul 2000 A
6096569 Matsuno et al. Aug 2000 A
6100108 Mizuno et al. Aug 2000 A
6106933 Nagai et al. Aug 2000 A
6110531 Paz De Araujo Aug 2000 A
6115616 Halperin et al. Sep 2000 A
6117279 Smolanoff et al. Sep 2000 A
6118426 Albert et al. Sep 2000 A
6120890 Chen et al. Sep 2000 A
6129277 Grant et al. Oct 2000 A
6133670 Rodgers et al. Oct 2000 A
6137671 Staffiere Oct 2000 A
6144916 Wood, Jr. et al. Nov 2000 A
6146225 Sheats et al. Nov 2000 A
6148503 Delnick et al. Nov 2000 A
6156452 Kozuki et al. Dec 2000 A
6157765 Bruce et al. Dec 2000 A
6159635 Dasgupta et al. Dec 2000 A
6160373 Dunn et al. Dec 2000 A
6162709 Raoux et al. Dec 2000 A
6165566 Tropsha Dec 2000 A
6168884 Neudecker et al. Jan 2001 B1
6169474 Greeff et al. Jan 2001 B1
6175075 Shiotsuka et al. Jan 2001 B1
6176986 Watanabe et al. Jan 2001 B1
6181283 Johnson et al. Jan 2001 B1
6192222 Greeff et al. Feb 2001 B1
6197167 Tanaka Mar 2001 B1
6198217 Suzuki et al. Mar 2001 B1
6204111 Uemoto et al. Mar 2001 B1
6210544 Sasaki Apr 2001 B1
6210832 Visco et al. Apr 2001 B1
6214061 Visco et al. Apr 2001 B1
6214660 Uemoto et al. Apr 2001 B1
6218049 Bates et al. Apr 2001 B1
6220516 Tuttle et al. Apr 2001 B1
6223317 Pax et al. Apr 2001 B1
6228532 Tsuji et al. May 2001 B1
6229987 Greeff et al. May 2001 B1
6232242 Hata et al. May 2001 B1
6235432 Kono et al. May 2001 B1
6236793 Lawrence et al. May 2001 B1
6242128 Tura et al. Jun 2001 B1
6242129 Johnson Jun 2001 B1
6242132 Neudecker et al. Jun 2001 B1
6248291 Nakagama et al. Jun 2001 B1
6248481 Visco et al. Jun 2001 B1
6248640 Nam Jun 2001 B1
6249222 Gehlot Jun 2001 B1
6252564 Albert et al. Jun 2001 B1
6258252 Miyasaka et al. Jul 2001 B1
6261917 Quek et al. Jul 2001 B1
6264709 Yoon et al. Jul 2001 B1
6265652 Kurata et al. Jul 2001 B1
6268695 Affinito Jul 2001 B1
6271053 Kondo Aug 2001 B1
6271793 Brady et al. Aug 2001 B1
6271801 Tuttle et al. Aug 2001 B2
6280585 Obinata Aug 2001 B1
6280875 Kwak et al. Aug 2001 B1
6281142 Basceri Aug 2001 B1
6284406 Xing et al. Sep 2001 B1
6287986 Mihara Sep 2001 B1
6289209 Wood, Jr. Sep 2001 B1
6290821 McLeod Sep 2001 B1
6290822 Fleming et al. Sep 2001 B1
6291098 Shibuya et al. Sep 2001 B1
6294722 Kondo et al. Sep 2001 B1
6296949 Bergstresser et al. Oct 2001 B1
6296967 Jacobs et al. Oct 2001 B1
6296971 Hara Oct 2001 B1
6300215 Shin Oct 2001 B1
6302939 Rabin Oct 2001 B1
6306265 Fu et al. Oct 2001 B1
6316563 Naijo et al. Nov 2001 B2
6323416 Komori et al. Nov 2001 B1
6324211 Ovard et al. Nov 2001 B1
6325294 Tuttle et al. Dec 2001 B2
6329213 Tuttle et al. Dec 2001 B1
6339236 Tomii et al. Jan 2002 B1
6340880 Higashijima et al. Jan 2002 B1
6344366 Bates Feb 2002 B1
6344419 Forster et al. Feb 2002 B1
6344795 Gehlot Feb 2002 B1
6350353 Gopalraja et al. Feb 2002 B2
6351630 Wood, Jr. Feb 2002 B2
6356230 Greeff et al. Mar 2002 B1
6356694 Weber Mar 2002 B1
6356764 Ovard et al. Mar 2002 B1
6358810 Dornfest et al. Mar 2002 B1
6360954 Barnardo Mar 2002 B1
6361662 Chiba et al. Mar 2002 B1
6365300 Ota et al. Apr 2002 B1
6365319 Heath et al. Apr 2002 B1
6368275 Sliwa et al. Apr 2002 B1
6369316 Plessing et al. Apr 2002 B1
6372383 Lee et al. Apr 2002 B1
6372386 Cho et al. Apr 2002 B1
6373224 Goto et al. Apr 2002 B1
6375780 Tuttle et al. Apr 2002 B1
6376027 Lee et al. Apr 2002 B1
6379835 Kucherovsky et al. Apr 2002 B1
6379842 Mayer Apr 2002 B1
6379846 Terahara et al. Apr 2002 B1
6380477 Curtin Apr 2002 B1
6384573 Dunn May 2002 B1
6387563 Bates May 2002 B1
6391166 Wang May 2002 B1
6392565 Brown May 2002 B1
6394598 Kaiser May 2002 B1
6395430 Cho et al. May 2002 B1
6396001 Nakamura May 2002 B1
6398824 Johnson Jun 2002 B1
6399241 Hara et al. Jun 2002 B1
6402039 Freeman et al. Jun 2002 B1
6402795 Chu et al. Jun 2002 B1
6402796 Johnson Jun 2002 B1
6409965 Nagata et al. Jun 2002 B1
6413284 Chu et al. Jul 2002 B1
6413285 Chu et al. Jul 2002 B1
6413382 Wang et al. Jul 2002 B1
6413645 Graff et al. Jul 2002 B1
6413676 Munshi Jul 2002 B1
6414626 Greeff et al. Jul 2002 B1
6416598 Sircar Jul 2002 B1
6420961 Bates et al. Jul 2002 B1
6422698 Kaiser Jul 2002 B2
6423106 Bates Jul 2002 B1
6423776 Akkapeddi et al. Jul 2002 B1
6426163 Pasquier et al. Jul 2002 B1
6432577 Shul et al. Aug 2002 B1
6432584 Visco et al. Aug 2002 B1
6433380 Shin Aug 2002 B2
6433465 McKnight et al. Aug 2002 B1
6436156 Wandeloski et al. Aug 2002 B1
6437231 Kurata et al. Aug 2002 B2
6444336 Jia et al. Sep 2002 B1
6444355 Murai et al. Sep 2002 B1
6444368 Hikmet et al. Sep 2002 B1
6444750 Touhsaent Sep 2002 B1
6459418 Comiskey et al. Oct 2002 B1
6459726 Ovard et al. Oct 2002 B1
6466771 Wood, Jr. Oct 2002 B2
6475668 Hosokawa et al. Nov 2002 B1
6481623 Grant et al. Nov 2002 B1
6488822 Moslehi Dec 2002 B1
6494999 Herrera et al. Dec 2002 B1
6495283 Yoon et al. Dec 2002 B1
6497598 Affinito Dec 2002 B2
6500287 Azens et al. Dec 2002 B1
6503661 Park et al. Jan 2003 B1
6503831 Speakman Jan 2003 B2
6506289 Demaray et al. Jan 2003 B2
6511516 Johnson et al. Jan 2003 B1
6511615 Dawes et al. Jan 2003 B1
6517968 Johnson et al. Feb 2003 B2
6522067 Graff et al. Feb 2003 B1
6524466 Bonaventura et al. Feb 2003 B1
6524750 Mansuetto Feb 2003 B1
6525976 Johnson Feb 2003 B1
6528212 Kusumoto et al. Mar 2003 B1
6529827 Beason et al. Mar 2003 B1
6533907 Demaray et al. Mar 2003 B2
6537428 Xiong et al. Mar 2003 B1
6538211 St. Lawrence et al. Mar 2003 B2
6541147 McLean et al. Apr 2003 B1
6548912 Graff et al. Apr 2003 B1
6551745 Moutsios et al. Apr 2003 B2
6558836 Whitacre et al. May 2003 B1
6562513 Takeuchi et al. May 2003 B1
6563998 Farah et al. May 2003 B1
6569564 Lane May 2003 B1
6569570 Sonobe et al. May 2003 B2
6570325 Graff et al. May 2003 B2
6572173 Muller Jun 2003 B2
6573652 Graff et al. Jun 2003 B1
6576546 Gilbert et al. Jun 2003 B2
6579728 Grant et al. Jun 2003 B2
6582480 Pasquier et al. Jun 2003 B2
6582481 Erbil Jun 2003 B1
6582852 Gao et al. Jun 2003 B1
6589299 Missling et al. Jul 2003 B2
6593150 Ramberg et al. Jul 2003 B2
6599662 Chiang et al. Jul 2003 B1
6600905 Greeff et al. Jul 2003 B2
6602338 Chen et al. Aug 2003 B2
6603139 Tessler et al. Aug 2003 B1
6603391 Greeff et al. Aug 2003 B1
6605228 Kawaguchi et al. Aug 2003 B1
6608464 Lew et al. Aug 2003 B1
6608470 Oglesbee et al. Aug 2003 B1
6610440 LaFollette et al. Aug 2003 B1
6615614 Makikawa et al. Sep 2003 B1
6616035 Ehrensvard et al. Sep 2003 B2
6618829 Pax et al. Sep 2003 B2
6620545 Goenka et al. Sep 2003 B2
6622049 Penner et al. Sep 2003 B2
6632563 Krasnov et al. Oct 2003 B1
6637906 Knoerzer et al. Oct 2003 B2
6637916 Mullner Oct 2003 B2
6639578 Comiskey et al. Oct 2003 B1
6645675 Munshi Nov 2003 B1
6650000 Ballantine et al. Nov 2003 B2
6650942 Howard et al. Nov 2003 B2
6662430 Brady et al. Dec 2003 B2
6664006 Munshi Dec 2003 B1
6673484 Matsuura Jan 2004 B2
6673716 D'Couto et al. Jan 2004 B1
6674159 Peterson et al. Jan 2004 B1
6677070 Kearl Jan 2004 B2
6683244 Fujimori et al. Jan 2004 B2
6683749 Daby et al. Jan 2004 B2
6686096 Chung Feb 2004 B1
6693840 Shimada et al. Feb 2004 B2
6700491 Shafer Mar 2004 B2
6706449 Mikhaylik et al. Mar 2004 B2
6709778 Johnson Mar 2004 B2
6713216 Kugai et al. Mar 2004 B2
6713389 Speakman Mar 2004 B2
6713987 Krasnov et al. Mar 2004 B2
6723140 Chu et al. Apr 2004 B2
6730423 Einhart et al. May 2004 B2
6733924 Skotheim et al. May 2004 B1
6737197 Chu et al. May 2004 B2
6737789 Radziemski et al. May 2004 B2
6741178 Tuttle May 2004 B1
6750156 Le et al. Jun 2004 B2
6752842 Luski et al. Jun 2004 B2
6753108 Hampden-Smith et al. Jun 2004 B1
6753114 Jacobs et al. Jun 2004 B2
6760520 Medin et al. Jul 2004 B1
6764525 Whitacre et al. Jul 2004 B1
6768246 Pelrine et al. Jul 2004 B2
6768855 Bakke et al. Jul 2004 B1
6770176 Benson et al. Aug 2004 B2
6773848 Nortoft et al. Aug 2004 B1
6780208 Hopkins et al. Aug 2004 B2
6797428 Skotheim et al. Sep 2004 B1
6797429 Komatsu Sep 2004 B1
6805998 Jensen et al. Oct 2004 B2
6805999 Lee et al. Oct 2004 B2
6818356 Bates Nov 2004 B1
6822157 Fujioka Nov 2004 B2
6824922 Park et al. Nov 2004 B2
6827826 Demaray et al. Dec 2004 B2
6828063 Park et al. Dec 2004 B2
6828065 Munshi Dec 2004 B2
6830846 Kramlich et al. Dec 2004 B2
6835493 Zhang et al. Dec 2004 B2
6838209 Langan et al. Jan 2005 B2
6846765 Imamura et al. Jan 2005 B2
6852139 Zhang et al. Feb 2005 B2
6855441 Levanon Feb 2005 B1
6861821 Masumoto et al. Mar 2005 B2
6863699 Krasnov et al. Mar 2005 B1
6866901 Burrows et al. Mar 2005 B2
6866963 Seung et al. Mar 2005 B2
6869722 Kearl Mar 2005 B2
6884327 Pan et al. Apr 2005 B2
6886240 Zhang et al. May 2005 B2
6890385 Tsuchiya et al. May 2005 B2
6896992 Kearl May 2005 B2
6899975 Watanabe et al. May 2005 B2
6902660 Lee et al. Jun 2005 B2
6905578 Moslehi et al. Jun 2005 B1
6906436 Jenson et al. Jun 2005 B2
6911667 Pichler et al. Jun 2005 B2
6916679 Snyder et al. Jul 2005 B2
6921464 Krasnov et al. Jul 2005 B2
6923702 Graff et al. Aug 2005 B2
6924164 Jensen Aug 2005 B2
6929879 Yamazaki Aug 2005 B2
6936377 Wensley et al. Aug 2005 B2
6936381 Skotheim et al. Aug 2005 B2
6936407 Pichler Aug 2005 B2
6949389 Pichler et al. Sep 2005 B2
6955986 Li Oct 2005 B2
6962613 Jenson Nov 2005 B2
6962671 Martin et al. Nov 2005 B2
6964829 Utsugi et al. Nov 2005 B2
6982132 Goldner et al. Jan 2006 B1
6986965 Jenson et al. Jan 2006 B2
6994933 Bates Feb 2006 B1
7022431 Shchori et al. Apr 2006 B2
7033406 Weir et al. Apr 2006 B2
7045246 Simburger et al. May 2006 B2
7045372 Ballantine et al. May 2006 B2
7056620 Krasnov et al. Jun 2006 B2
7073723 Fürst et al. Jul 2006 B2
7095372 Soler Castany et al. Aug 2006 B2
7129166 Speakman Oct 2006 B2
7131189 Jenson Nov 2006 B2
7144654 LaFollette et al. Dec 2006 B2
7144655 Jenson et al. Dec 2006 B2
7157187 Jenson Jan 2007 B2
7158031 Tuttle Jan 2007 B2
7162392 Vock et al. Jan 2007 B2
7183693 Brantner et al. Feb 2007 B2
7186479 Krasnov et al. Mar 2007 B2
7194801 Jenson et al. Mar 2007 B2
7198832 Burrows et al. Apr 2007 B2
7202825 Leizerovich et al. Apr 2007 B2
7220517 Park et al. May 2007 B2
7230321 McCain Jun 2007 B2
7247408 Skotheim et al. Jul 2007 B2
7253494 Mino et al. Aug 2007 B2
7265674 Tuttle Sep 2007 B2
7267904 Komatsu et al. Sep 2007 B2
7267906 Mizuta et al. Sep 2007 B2
7273682 Park et al. Sep 2007 B2
7274118 Jenson et al. Sep 2007 B2
7288340 Iwamoto Oct 2007 B2
7316867 Park et al. Jan 2008 B2
7323634 Speakman Jan 2008 B2
7332363 Edwards Feb 2008 B2
7335441 Luski et al. Feb 2008 B2
RE40137 Tuttle et al. Mar 2008 E
7345647 Rodenbeck Mar 2008 B1
7348099 Mukai et al. Mar 2008 B2
7389580 Jenson et al. Jun 2008 B2
7400253 Cohen Jul 2008 B2
7410730 Bates Aug 2008 B2
RE40531 Graff et al. Oct 2008 E
7468221 LaFollette et al. Dec 2008 B2
7494742 Tarnowski et al. Feb 2009 B2
7670724 Chan et al. Mar 2010 B1
20010005561 Yamada et al. Jun 2001 A1
20010027159 Kaneyoshi Oct 2001 A1
20010031122 Lackritz et al. Oct 2001 A1
20010032666 Jenson et al. Oct 2001 A1
20010033952 Jenson et al. Oct 2001 A1
20010034106 Moise et al. Oct 2001 A1
20010041294 Chu et al. Nov 2001 A1
20010041460 Wiggins Nov 2001 A1
20010052752 Ghosh et al. Dec 2001 A1
20010054437 Komori et al. Dec 2001 A1
20010055719 Akashi et al. Dec 2001 A1
20020000034 Jenson Jan 2002 A1
20020001746 Jenson Jan 2002 A1
20020001747 Jenson Jan 2002 A1
20020004167 Jenson et al. Jan 2002 A1
20020009630 Gao et al. Jan 2002 A1
20020019296 Freeman et al. Feb 2002 A1
20020028377 Gross Mar 2002 A1
20020033330 Demaray et al. Mar 2002 A1
20020037756 Jacobs et al. Mar 2002 A1
20020066539 Muller Jun 2002 A1
20020067615 Muller Jun 2002 A1
20020071989 Verma et al. Jun 2002 A1
20020076133 Li et al. Jun 2002 A1
20020091929 Ehrensvard Jul 2002 A1
20020093029 Ballantine et al. Jul 2002 A1
20020106297 Ueno et al. Aug 2002 A1
20020115252 Haukka et al. Aug 2002 A1
20020134671 Demaray et al. Sep 2002 A1
20020139662 Lee Oct 2002 A1
20020140103 Kloster et al. Oct 2002 A1
20020159245 Murasko et al. Oct 2002 A1
20020161404 Schmidt Oct 2002 A1
20020164441 Amine et al. Nov 2002 A1
20020170821 Sandlin et al. Nov 2002 A1
20020170960 Ehrensvard et al. Nov 2002 A1
20030019326 Han et al. Jan 2003 A1
20030022487 Yoon et al. Jan 2003 A1
20030024994 Ladyansky Feb 2003 A1
20030029493 Plessing Feb 2003 A1
20030035906 Memarian et al. Feb 2003 A1
20030036003 Shchori et al. Feb 2003 A1
20030042131 Johnson Mar 2003 A1
20030044665 Rastegar et al. Mar 2003 A1
20030048635 Knoerzer et al. Mar 2003 A1
20030063883 Demaray et al. Apr 2003 A1
20030064292 Neudecker et al. Apr 2003 A1
20030068559 Armstrong et al. Apr 2003 A1
20030076642 Shiner et al. Apr 2003 A1
20030077914 Le et al. Apr 2003 A1
20030079838 Brcka May 2003 A1
20030091904 Munshi May 2003 A1
20030095463 Shimada et al. May 2003 A1
20030097858 Strohhofer et al. May 2003 A1
20030109903 Berrang et al. Jun 2003 A1
20030127319 Demaray et al. Jul 2003 A1
20030134054 Demaray et al. Jul 2003 A1
20030141186 Wang et al. Jul 2003 A1
20030143853 Celii et al. Jul 2003 A1
20030146877 Mueller Aug 2003 A1
20030152829 Zhang et al. Aug 2003 A1
20030162094 Lee et al. Aug 2003 A1
20030173207 Zhang et al. Sep 2003 A1
20030173208 Pan et al. Sep 2003 A1
20030174391 Pan et al. Sep 2003 A1
20030175142 Milonopoulou et al. Sep 2003 A1
20030178623 Nishiki et al. Sep 2003 A1
20030178637 Chen et al. Sep 2003 A1
20030180610 Felde et al. Sep 2003 A1
20030185266 Henrichs Oct 2003 A1
20030231106 Shafer Dec 2003 A1
20030232248 Iwamoto et al. Dec 2003 A1
20040008587 Siebott et al. Jan 2004 A1
20040015735 Norman Jan 2004 A1
20040023106 Benson et al. Feb 2004 A1
20040028875 Van Rijn et al. Feb 2004 A1
20040029311 Snyder et al. Feb 2004 A1
20040038050 Saijo et al. Feb 2004 A1
20040043557 Haukka et al. Mar 2004 A1
20040048157 Neudecker et al. Mar 2004 A1
20040058237 Higuchi et al. Mar 2004 A1
20040072067 Minami et al. Apr 2004 A1
20040077161 Chen et al. Apr 2004 A1
20040078662 Hamel et al. Apr 2004 A1
20040081415 Demaray et al. Apr 2004 A1
20040081860 Hundt et al. Apr 2004 A1
20040085002 Pearce May 2004 A1
20040101761 Park et al. May 2004 A1
20040105644 Dawes Jun 2004 A1
20040106038 Shimamura et al. Jun 2004 A1
20040106046 Inda Jun 2004 A1
20040118700 Schierle-Arndt et al. Jun 2004 A1
20040126305 Chen et al. Jul 2004 A1
20040151986 Park et al. Aug 2004 A1
20040161640 Salot Aug 2004 A1
20040175624 Luski et al. Sep 2004 A1
20040188239 Robison et al. Sep 2004 A1
20040209159 Lee et al. Oct 2004 A1
20040212276 Brantner et al. Oct 2004 A1
20040214079 Simburger et al. Oct 2004 A1
20040219434 Benson et al. Nov 2004 A1
20040245561 Sakashita et al. Dec 2004 A1
20040258984 Ariel et al. Dec 2004 A1
20040259305 Demaray et al. Dec 2004 A1
20050000794 Demaray et al. Jan 2005 A1
20050006768 Narasimhan et al. Jan 2005 A1
20050048802 Zhang et al. Mar 2005 A1
20050070097 Barmak et al. Mar 2005 A1
20050072458 Goldstein Apr 2005 A1
20050079418 Kelley et al. Apr 2005 A1
20050095506 Klaassen May 2005 A1
20050105231 Hamel et al. May 2005 A1
20050110457 LaFollette et al. May 2005 A1
20050112461 Amine et al. May 2005 A1
20050118464 Levanon Jun 2005 A1
20050130032 Krasnov et al. Jun 2005 A1
20050133361 Ding et al. Jun 2005 A1
20050141170 Honda et al. Jun 2005 A1
20050142447 Nakai et al. Jun 2005 A1
20050147877 Tarnowski et al. Jul 2005 A1
20050158622 Mizuta et al. Jul 2005 A1
20050170736 Cok Aug 2005 A1
20050175891 Kameyama et al. Aug 2005 A1
20050176181 Burrows et al. Aug 2005 A1
20050181280 Ceder et al. Aug 2005 A1
20050183946 Pan et al. Aug 2005 A1
20050189139 Stole Sep 2005 A1
20050208371 Kim et al. Sep 2005 A1
20050239917 Nelson et al. Oct 2005 A1
20050255828 Fisher Nov 2005 A1
20050266161 Medeiros et al. Dec 2005 A1
20060019504 Taussig Jan 2006 A1
20060021214 Jenson et al. Feb 2006 A1
20060021261 Face Feb 2006 A1
20060040177 Onodera et al. Feb 2006 A1
20060046907 Rastegar et al. Mar 2006 A1
20060054496 Zhang et al. Mar 2006 A1
20060057283 Zhang et al. Mar 2006 A1
20060057304 Zhang et al. Mar 2006 A1
20060063074 Jenson et al. Mar 2006 A1
20060071592 Narasimhan et al. Apr 2006 A1
20060155545 Jayne Jul 2006 A1
20060201583 Michaluk et al. Sep 2006 A1
20060210779 Weir et al. Sep 2006 A1
20060222954 Skotheim et al. Oct 2006 A1
20060234130 Inda Oct 2006 A1
20060237543 Goto et al. Oct 2006 A1
20060255435 Fuergut et al. Nov 2006 A1
20060286448 Snyder et al. Dec 2006 A1
20070009802 Lee et al. Jan 2007 A1
20070021156 Hoong et al. Jan 2007 A1
20070023275 Tanase et al. Feb 2007 A1
20070037058 Visco et al. Feb 2007 A1
20070053139 Zhang et al. Mar 2007 A1
20070087230 Jenson et al. Apr 2007 A1
20070091543 Gasse et al. Apr 2007 A1
20070125638 Zhang et al. Jun 2007 A1
20070141468 Barker Jun 2007 A1
20070148065 Weir et al. Jun 2007 A1
20070148553 Weppner Jun 2007 A1
20070151661 Mao et al. Jul 2007 A1
20070164376 Burrows et al. Jul 2007 A1
20070166612 Krasnov et al. Jul 2007 A1
20070184345 Neudecker et al. Aug 2007 A1
20070196682 Visser et al. Aug 2007 A1
20070202395 Snyder et al. Aug 2007 A1
20070205513 Brunnbauer et al. Sep 2007 A1
20070210459 Burrows et al. Sep 2007 A1
20070222681 Greene et al. Sep 2007 A1
20070224951 Gilb et al. Sep 2007 A1
20070235320 White et al. Oct 2007 A1
20070264564 Johnson et al. Nov 2007 A1
20070278653 Brunnbauer et al. Dec 2007 A1
20070298326 Angell et al. Dec 2007 A1
20080003496 Neudecker et al. Jan 2008 A1
20080008936 Mizuta et al. Jan 2008 A1
20080014501 Skotheim et al. Jan 2008 A1
20080057397 Skotheim et al. Mar 2008 A1
20080213672 Skotheim et al. Sep 2008 A1
20080233708 Hisamatsu Sep 2008 A1
20080254575 Fuergut et al. Oct 2008 A1
20080261107 Snyder et al. Oct 2008 A1
20080263855 Li et al. Oct 2008 A1
20080286651 Neudecker et al. Nov 2008 A1
20090181303 Neudecker et al. Jul 2009 A1
20090302226 Schieber et al. Dec 2009 A1
20100032001 Brantner Feb 2010 A1
20100086853 Venkatachalam et al. Apr 2010 A1
Foreign Referenced Citations (126)
Number Date Country
1415124 Apr 2003 CN
1532984 Sep 2004 CN
19824145 Dec 1999 DE
10 2005 014 427 Sep 2006 DE
10 2006 054 309 Nov 2006 DE
10 2008 016 665 Oct 2008 DE
102007030604 Jan 2009 DE
0 510 883 Oct 1992 EP
0 639 655 Feb 1995 EP
0 652 308 May 1995 EP
0 820 088 Jan 1998 EP
1 068 899 Jan 2001 EP
0 867 985 Feb 2001 EP
1 092 689 Apr 2001 EP
1 189 080 Mar 2002 EP
1 713 024 Oct 2006 EP
2806198 Sep 2001 FR
2 861 218 Apr 2005 FR
55-009305 Jan 1980 JP
56-076060 Jun 1981 JP
56-156675 Dec 1981 JP
60-068558 Apr 1985 JP
61-269072 Nov 1986 JP
62-267944 Nov 1987 JP
63-290922 Nov 1988 JP
2000-162234 Nov 1988 JP
2-054764 Feb 1990 JP
2-230662 Sep 1990 JP
03-036962 Feb 1991 JP
4-058456 Feb 1992 JP
4-072049 Mar 1992 JP
6-010127 Jan 1994 JP
6-100333 Apr 1994 JP
7-233469 May 1995 JP
7-224379 Aug 1995 JP
08-114408 May 1996 JP
10-026571 Jan 1998 JP
10-239187 Sep 1998 JP
11-204088 Jul 1999 JP
2000-144435 May 2000 JP
2000-188099 Jul 2000 JP
2000-268867 Sep 2000 JP
2001-171812 Jun 2001 JP
2001-259494 Sep 2001 JP
2001-297764 Oct 2001 JP
2001-328198 Nov 2001 JP
2002-140776 May 2002 JP
2002-344115 Nov 2002 JP
2003-17040 Jan 2003 JP
2003-347045 Dec 2003 JP
2004-071305 Mar 2004 JP
2004-149849 May 2004 JP
2004-158268 Jun 2004 JP
2004-273436 Sep 2004 JP
2005-256101 Sep 2005 JP
2002-026412 Feb 2007 JP
7-107752 Apr 2007 JP
20020007881 Jan 2002 KR
20020017790 Mar 2002 KR
20020029813 Apr 2002 KR
20020038917 May 2002 KR
20030033913 May 2003 KR
20030042288 May 2003 KR
20030085252 Nov 2003 KR
2241281 Nov 2004 RU
WO 9513629 May 1995 WO
WO 9623085 Aug 1996 WO
WO 9623217 Aug 1996 WO
WO 9727344 Jul 1997 WO
WO 9735044 Sep 1997 WO
WO 9847196 Oct 1998 WO
WO 9943034 Aug 1999 WO
WO 9957770 Nov 1999 WO
WO 0021898 Apr 2000 WO
WO 0022742 Apr 2000 WO
WO 0028607 May 2000 WO
WO 0036665 Jun 2000 WO
WO 0060682 Oct 2000 WO
WO 0060689 Oct 2000 WO
WO 0062365 Oct 2000 WO
WO 0101507 Jan 2001 WO
WO 0117052 Mar 2001 WO
WO 0124303 Apr 2001 WO
WO 0133651 May 2001 WO
WO 0139305 May 2001 WO
WO 0173864 Oct 2001 WO
WO 0173865 Oct 2001 WO
WO 0173866 Oct 2001 WO
WO 0173868 Oct 2001 WO
WO 0173870 Oct 2001 WO
WO 0173883 Oct 2001 WO
WO 0173957 Oct 2001 WO
WO 0182390 Nov 2001 WO
WO 0212932 Feb 2002 WO
WO 0242516 May 2002 WO
WO 0247187 Jun 2002 WO
WO 02071506 Sep 2002 WO
WO 02101857 Dec 2002 WO
WO 03003485 Jan 2003 WO
WO 03005477 Jan 2003 WO
WO 03026039 Mar 2003 WO
WO 03036670 May 2003 WO
WO 03069714 Aug 2003 WO
WO 03080325 Oct 2003 WO
WO 03083166 Oct 2003 WO
WO 2004012283 Feb 2004 WO
WO 2004021532 Mar 2004 WO
WO 2004061887 Jul 2004 WO
WO 2004077519 Sep 2004 WO
WO 2004086550 Oct 2004 WO
WO 2004093223 Oct 2004 WO
WO 2004106581 Dec 2004 WO
WO 2004106582 Dec 2004 WO
WO 2005008828 Jan 2005 WO
WO 2005013394 Feb 2005 WO
WO 2005038957 Apr 2005 WO
WO 2005067645 Jul 2005 WO
WO 2005085138 Sep 2005 WO
WO 2005091405 Sep 2005 WO
WO 2006063308 Jun 2006 WO
WO 2006085307 Aug 2006 WO
WO 2007016781 Feb 2007 WO
WO 2007019855 Feb 2007 WO
WO 2007027535 Mar 2007 WO
WO 2007095604 Aug 2007 WO
WO 2008036731 Mar 2008 WO
Related Publications (1)
Number Date Country
20090162755 A1 Jun 2009 US
Provisional Applications (2)
Number Date Country
61022904 Jan 2008 US
61016038 Dec 2007 US
Continuation in Parts (1)
Number Date Country
Parent 12339361 Dec 2008 US
Child 12358762 US