Claims
- 1. A transistor having a nonuniform doping channel comprising:
- a gate oxide film formed on a semiconductor substrate provided with a trench, said trench having a center and an axis at the center, said substrate having a surface;
- a gate electrode formed on said gate oxide film atop the trench and surroundings, said gate electrode having a longer portion and a shorter portion and thus, being asymmetrical with regard to the axis passing the center of the trench;
- a source region formed neighboring the shorter portion of said gate electrode;
- a high density channel region formed by doping impurities of same type as said semiconductor substrate below the longer portion of said gate electrode, said high density channel region extending a first depth from the surface of said substrate, said trench extending a second depth with said second depth being greater than said first depth; and
- a drain region formed neighboring said high density channel region.
Priority Claims (1)
Number |
Date |
Country |
Kind |
1992-23083 |
Dec 1992 |
KRX |
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Parent Case Info
This is a division of application Ser. No. 08/160,684, filed Dec. 2, 1993, now U.S. Pat. No. 5,376,570.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
4291321 |
Pfleiderer et al. |
Sep 1981 |
|
5338958 |
Mitsumoto |
Aug 1994 |
|
5359221 |
Miyamoto et al. |
Oct 1994 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
1-67966 |
Mar 1989 |
JPX |
Divisions (1)
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Number |
Date |
Country |
Parent |
160684 |
Dec 1993 |
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