and non-planar channel

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H01L29/1037

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/1037and non-planar channel

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 12,232,320
- Issue date Feb 18, 2025
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device architectures with tensile and compressive strained substrates
- Patent number 12,218,201
- Issue date Feb 4, 2025
- National University of Singapore
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for gate-all-around metal-oxide-semiconductor...
- Patent number 12,218,137
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid channel semiconductor device and method
- Patent number 12,211,900
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with strained channels
- Patent number 12,211,897
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-En Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having trench structure in which propagation o...
- Patent number 12,211,899
- Issue date Jan 28, 2025
- Korea Institute of Science and Technology
- Hyung-jun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructured channel regions for semiconductor devices
- Patent number 12,211,918
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,213,296
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having removed substrate
- Patent number 12,199,143
- Issue date Jan 14, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel gate all around transistor device and fabrication meth...
- Patent number 12,198,986
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Sheng Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of manufacturing the semicon...
- Patent number 12,199,166
- Issue date Jan 14, 2025
- SK hynix Inc.
- Nam Jae Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory circuit, system and method for rapid retrieval of data sets
- Patent number 12,190,968
- Issue date Jan 7, 2025
- SUNRISE MEMORY CORPORATION
- Eli Harari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dual gate control for trench shaped thin film transistors
- Patent number 12,191,395
- Issue date Jan 7, 2025
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,191,380
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ssu-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with low-resistance bottom source-...
- Patent number 12,183,826
- Issue date Dec 31, 2024
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including upper and lower selectors
- Patent number 12,178,046
- Issue date Dec 24, 2024
- Samsung Electronics Co., Ltd.
- Kohji Kanamori
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,166,125
- Issue date Dec 10, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,159,872
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having conductive structures along pillars of...
- Patent number 12,142,680
- Issue date Nov 12, 2024
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses including multiple channel materials within a tier stack
- Patent number 12,132,116
- Issue date Oct 29, 2024
- Akira Goda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel mobility improvement
- Patent number 12,132,082
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of vertical transistors having channel regions connected by a...
- Patent number 12,119,269
- Issue date Oct 15, 2024
- Micron Technology, Inc.
- Deepak Chandra Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around transistors with different threshold voltages
- Patent number 12,119,379
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM speed and margin optimization via spacer tuning
- Patent number 12,101,921
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Hao Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanowire stack GAA device with selectable numbers of channel strips
- Patent number 12,100,737
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Jui Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arsenic-doped epitaxial source/drain regions for NMOS
- Patent number 12,094,881
- Issue date Sep 17, 2024
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,087,857
- Issue date Sep 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yukun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel structure
- Patent number 12,087,819
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel devices and methods of manufacture
- Patent number 12,087,638
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite oxide semiconductor and transistor
- Patent number 12,087,824
- Issue date Sep 10, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063752
- Publication date Feb 20, 2025
- Kabushiki Kaisha Toshiba
- Ikuo FUJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT
- Publication number 20250063815
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE WITH HYBRID CONDUCTION MECHANISM
- Publication number 20250040196
- Publication date Jan 30, 2025
- Fudan University
- Chunlei WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040176
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Youngtaek Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...
- Publication number 20250040237
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vitor A. Vulcano Rossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE GATES AND RELATED METHOD
- Publication number 20250040243
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250024679
- Publication date Jan 16, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- G11 - INFORMATION STORAGE
Information Patent Application
Assemblies Having Conductive Structures Along Pillars of Semiconduc...
- Publication number 20250022955
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES INCLUDING MULTI-MATERIAL CHANNEL STRUCTURES
- Publication number 20250022962
- Publication date Jan 16, 2025
- Lodestar Licensing Group LLC
- Akira Goda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES
- Publication number 20250015187
- Publication date Jan 9, 2025
- Invention And Collaboration Laboratory, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...
- Publication number 20250006734
- Publication date Jan 2, 2025
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH IMPROVED LEAKAGE CURRENT CONTROL
- Publication number 20240429285
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE OXIDE SEMICONDUCTOR AND TRANSISTOR
- Publication number 20240429287
- Publication date Dec 26, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR TRANSISTOR STRUCTURES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240405022
- Publication date Dec 5, 2024
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240405126
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Huan HSIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES INCLUDING ANGLED GATE TRENCHES
- Publication number 20240395927
- Publication date Nov 28, 2024
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES HAVING GATE DIELECTRIC LAYERS OF VARYING TH...
- Publication number 20240395628
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Pei-Hsun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL MOBILITY IMPROVEMENT
- Publication number 20240387637
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DRAM STRUCTURE AND METHOD
- Publication number 20240389304
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387709
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ssu-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20240387636
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES
- Publication number 20240387673
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES
- Publication number 20240387635
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GAP FILLING FOR SEMICONDUCTOR DEVICE
- Publication number 20240387704
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240381648
- Publication date Nov 14, 2024
- KIOXIA Corporation
- Toshiyuki SASAKI
- B24 - GRINDING POLISHING
Information Patent Application
FIN-END GATE STRUCTURES AND METHOD FORMING SAME
- Publication number 20240379821
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION
- Publication number 20240379877
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Chun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM SPEED AND MARGIN OPTIMIZATION VIA SPACER TUNING
- Publication number 20240373614
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Shih-Hao Lin
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL CHANNEL STRUCTURE
- Publication number 20240371939
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EIGHT-TRANSISTOR STATIC RANDOM ACCESS MEMORY, LAYOUT THEREOF, AND M...
- Publication number 20240373615
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shau-Wei LU
- H01 - BASIC ELECTRIC ELEMENTS

and non-planar channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Word line structure of three-dimensional memory device

Device architectures with tensile and compressive strained substrates

Structure and method for gate-all-around metal-oxide-semiconductor...

Hybrid channel semiconductor device and method

Gate-all-around transistor with strained channels

Semiconductor device having trench structure in which propagation o...

Nanostructured channel regions for semiconductor devices

IC including standard cells and SRAM cells

Gate-all-around integrated circuit structures having removed substrate

Dual channel gate all around transistor device and fabrication meth...

Semiconductor memory device and method of manufacturing the semicon...

Memory circuit, system and method for rapid retrieval of data sets

Dual gate control for trench shaped thin film transistors

Semiconductor device and method

Vertical field effect transistor with low-resistance bottom source-...

Semiconductor devices including upper and lower selectors

Semiconductor structure and method for forming the same

IC including standard cells and SRAM cells

Transistor structures having conductive structures along pillars of...

Apparatuses including multiple channel materials within a tier stack

Channel mobility improvement

Array of vertical transistors having channel regions connected by a...

Gate all around transistors with different threshold voltages

SRAM speed and margin optimization via spacer tuning

Nanowire stack GAA device with selectable numbers of channel strips

Arsenic-doped epitaxial source/drain regions for NMOS

Semiconductor device and method for manufacturing the same

Dual channel structure

Multi-channel devices and methods of manufacture

Composite oxide semiconductor and transistor

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT

FIN FIELD-EFFECT TRANSISTOR DEVICE WITH HYBRID CONDUCTION MECHANISM

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...

SEMICONDUCTOR DEVICE WITH MULTIPLE GATES AND RELATED METHOD

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

Assemblies Having Conductive Structures Along Pillars of Semiconduc...

MEMORY DEVICES INCLUDING MULTI-MATERIAL CHANNEL STRUCTURES

TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES

PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...

SEMICONDUCTOR DEVICES WITH IMPROVED LEAKAGE CURRENT CONTROL

COMPOSITE OXIDE SEMICONDUCTOR AND TRANSISTOR

NON-PLANAR TRANSISTOR STRUCTURES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

POWER SEMICONDUCTOR DEVICES INCLUDING ANGLED GATE TRENCHES

GATE-ALL-AROUND DEVICES HAVING GATE DIELECTRIC LAYERS OF VARYING TH...

CHANNEL MOBILITY IMPROVEMENT

VERTICAL DRAM STRUCTURE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD

GATE STRUCTURES FOR SEMICONDUCTOR DEVICES

NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES

GATE ALL AROUND TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES

METHOD OF GAP FILLING FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

FIN-END GATE STRUCTURES AND METHOD FORMING SAME

SURFACE-DOPED CHANNELS FOR THRESHOLD VOLTAGE MODULATION

SRAM SPEED AND MARGIN OPTIMIZATION VIA SPACER TUNING

DUAL CHANNEL STRUCTURE

EIGHT-TRANSISTOR STATIC RANDOM ACCESS MEMORY, LAYOUT THEREOF, AND M...