Patent Application
20120326592
The invention relates generally to RF applicator apparatus and methods useful for coupling RF power to a plasma discharge in a plasma chamber for fabricating electronic devices such as semiconductors, displays and solar cells. The invention relates more specifically to such an RF applicator comprising an inner conductor and one or two outer conductors, wherein each outer conductor has apertures from which the applicator can radiate RF energy to a plasma in a plasma chamber.
Plasma chambers commonly are used to perform processes for fabricating electronic devices such as semiconductors, displays and solar cells. Such plasma fabrication processes include chemical vapor deposition of semiconductor, conductor or dielectric layers on the surface of a workpiece or etching of selected portions of such layers on the workpiece surface.
A plasma commonly is sustained in a plasma chamber by coupling RF power from an RF applicator to a gas or plasma within the chamber. The RF power excites the gas to a plasma state or provides the RF power necessary to sustain the plasma. Two broad categories of coupling techniques are an electrode that capacitively couples RF power to the plasma or an antenna that radiates electromagnetic radiation into the plasma.
One conventional type of antenna is an inductive coupler, also called an inductively coupled antenna, in which RF power is coupled to the plasma primarily by means of the magnetic field produced by the antenna. A shortcoming of an inductive coupler is that it generally cannot be operated at an RF frequency whose wavelength is less than the diameter of the inductive coupler. The inability to operate at a high RF frequency is a serious shortcoming in certain plasma chemistries.
Another conventional type of antenna is a hollow waveguide having slots in one waveguide wall through which RF power is radiated from the interior of the hollow waveguide to the plasma. A shortcoming of a hollow waveguide is that it cannot operate below a cutoff frequency, hence its width along one transverse axis must be at least one-half the wavelength of a signal propagating within the waveguide at the power source frequency. As a result of this width requirement, slotted hollow waveguide antennas typically have been used outside a dielectric window of a plasma chamber rather than inside a plasma chamber.
Another conventional type of antenna is a linear conductor surrounded by a cylindrical dielectric, with the combination being positioned within a plasma chamber so that it is surrounded by the plasma. One or both ends of the conductor are connected to receive power from a UHF or microwave power source. Power is coupled from the antenna to the plasma by means of an electromagnetic wave at the boundary between the plasma and the dielectric. A shortcoming of this type of antenna is that the power radiated by the antenna progressively decreases with distance from the end of the antenna that is connected to the power source. Even if both ends of the antenna are connected to a power source, the radiated power near the center of the antenna will be lower than the power near the ends, thereby degrading spatial uniformity of the plasma. The non-uniformity increases with the length of the antenna, hence this type of antenna is less desirable for large plasma chambers.
The invention is a transmission line RF applicator apparatus and method useful for coupling RF power to a plasma in a plasma chamber. The invention comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.
In operation, when the output of an RF power source is connected between the inner conductor and the one or two outer conductors, the applicator radiates RF energy from the apertures in the one or two outer conductors. A single RF power source can be connected to the inner and outer conductors or, more preferably, two RF power supplies can be connected respectively to opposite ends of the applicator.
Another aspect of the invention is a plasma chamber that includes the aforesaid transmission line RF applicator in combination with a dielectric cover and first and second sealing apparatuses. The plasma chamber comprises a vacuum enclosure that encloses an interior of the plasma chamber. A main portion of the dielectric cover is positioned within the interior of the plasma chamber. The main portion of the aforesaid one or two outer conductors is positioned within the main portion of the dielectric cover. The first and second sealing apparatuses respectively abut first and second end portions of the dielectric cover such that the first and second sealing apparatuses, the dielectric cover and the vacuum enclosure in combination prevent fluid communication between the main portion of the outer conductor and the interior of the plasma chamber.
Preventing such fluid communication is advantageous to prevent the formation within the apertures of a gas discharge that would electrically short-circuit the apertures, thereby preventing the applicator from radiating RF power through the apertures. Furthermore, if any portion of the space between the inner and outer conductors is occupied by a gas, an additional advantage of preventing such fluid communication is that, during operation of the plasma chamber, it enables the space to remain at a much higher pressure than the vacuum within the plasma chamber. Maintaining the space at a higher pressure, such as atmospheric pressure, helps prevent gas discharge between the inner and outer conductors.
In a first aspect or embodiment of the invention, the inner conductor is positioned within the outer conductor, and there is no requirement for more than one outer conductor. In a second aspect or embodiment of the invention requiring two outer conductors, the inner conductor is positioned between the two outer conductors.
In operation, the amount of power radiated from any portion of the applicator increases with the number and size of the apertures in that portion and with the respective angles at which the apertures are oriented relative to the longitudinal dimension of the applicator.
Therefore, one advantage of the invention is that the applicator can be as long as desired by employing apertures that are sufficiently small and widely spaced to avoid the power propagating within the applicator from dropping to zero at longitudinal positions farthest from where the one or two outer conductors are connected to an RF power source.
A second advantage of the invention is that the spatial uniformity of radiated power or the spatial uniformity of the plasma can be optimized by altering the relative sizes, spacing or orientations of apertures in different portions of the one or two outer conductors.
A third advantage of the invention is that, unlike a hollow waveguide, the applicator does not have a cutoff frequency, hence its transverse width is not required to be greater than one-half wavelength as would be required in a hollow waveguide.
A fourth advantage of the invention is that, unlike an inductive coupler, the applicator can be operated at an RF frequency whose wavelength is shorter than the longest dimension of the portion of the applicator that radiates RF. In other words, the output of the RF power source can have a wavelength that is shorter than the longest dimension of the main portion of the inner conductor and is shorter than the longest dimension of the main portion of the outer conductor.
Within this patent application, we use the term RF to broadly include the microwave frequency range and all frequencies below.
The applicator 10 includes an inner conductor 14 and an outer conductor 20. The outer conductor 20 has a main portion 21 extending between first and second end portions 24, 25. Similarly, the inner conductor 14 has a main portion 15 extending between first and second end portions 16, 17. The main portion 15 of the inner conductor is positioned within, and spaced away from, the main portion 21 of the outer conductor 20.
We refer to the applicator 10 as having opposite first and second ends 12, 13, such that the first end 12 of the applicator is adjacent the respective first end portions 16, 24 of the inner and outer conductors, and the second end 13 of the applicator is adjacent the respective second end portions 17, 25 of the inner and outer conductors.
The main portion 21 of the outer conductor 20 includes a plurality of apertures 30 that extend between inner and outer surfaces 22, 23 of the main portion of the outer conductor. The inner surface 22 faces the main portion 15 of the inner conductor. In embodiments that include a dielectric cover 40 as explained below, the outer surface 23 of the main portion of the outer conductor faces the inner surface 44 of the main portion 41 of the dielectric cover.
In operation, when the output of an RF power source 70, 74 is connected between the inner conductor 14 and the outer conductor 20, an RF electromagnetic wave propagates through the space 18 between the respective main portions 15, 21 of the inner and outer conductors. A portion of the RF power in this electromagnetic wave radiates from the apertures 30, thereby radiating RF power outside the applicator.
If the applicator is within the vacuum enclosure 60 of a plasma chamber as shown in
The invention is especially advantageous for use in a plasma chamber that processes two workpieces 62 simultaneously. In that case, an applicator 10 according to the invention can be positioned between the two workpieces 62 within the vacuum enclosure 60 of a plasma chamber as shown in
The applicator preferably includes a dielectric cover 40 and first and second sealing apparatuses 52, 53 to prevent plasma from entering the apertures 30. This is explained in the subsequent section of this patent specification entitled “3. Dielectric Cover and Dielectric Between Conductors”.
If only one RF power source 70 is connected to the applicator as shown in
It would be possible to position the apertures 20 only at locations of successive maxima of the axial electrical field standing wave pattern, which would occur at half-wavelength intervals along the longitudinal dimension L of the outer conductor. However, the locations of the maxima are difficult to predict because the standing wave pattern shifts as a function of operating conditions in the plasma chamber. Therefore, if only one RF power source 70 is connected to the applicator, it is preferable to space the apertures less than one-fourth wavelength apart along the longitudinal dimension of the outer conductor, in which case there is no need to predict the locations of the standing wave maxima.
A key difference between the invention and conventional designs that employ a slotted hollow waveguide applicator is that the invention has distinct inner and outer RF-powered conductors 14, 20 that can be connected to receive an RF voltage from an RF power source 70. (In other words, an RF power source can be connected to produce an RF voltage between the inner conductor 14 and the outer conductor 20.) In contrast, the waveguide of a hollow waveguide applicator is not RF-powered, but merely functions as an electrically conductive boundary to confine a wave propagating through the dielectric that the hollow waveguide surrounds. It is well known that a hollow waveguide has a cutoff frequency below which no wave will propagate, which requires its transverse width to exceed a certain size. Reducing the transverse width of the applicator is beneficial to reduce the fraction of the reagents in the plasma chamber that are consumed by surface reactions adjacent the surface of the applicator. A valuable advantage of the invention over slotted hollow waveguide applicators is that the invention does not have a cutoff frequency or a required minimum dimension.
The invention does not require the inner and outer conductors 14, 20 to have any specific shapes. In
The inner conductor need not have the same shape as the outer conductor. For example, an applicator can have an inner conductor 14 that is cylindrical as in
In all of the illustrated embodiments, the inner and outer conductors are positioned coaxially and are straight and tubular in shape. However, this is not a requirement of the invention. For example, the inner and outer conductors can have a curved, serpentine or zig-zag shape.
The details of electrical connections from one or two RF power sources 70, 74 to the applicator 10 now will be described.
In operation, a first RF power source 70 is connected to produce a first RF voltage between the inner conductor 14 and the outer conductor 20. Preferably but optionally, a second RF power source 74 is connected to produce a second RF voltage between the inner conductor 14 and the outer conductor 20.
If both RF power sources are used, preferably the RF outputs of the first and second RF power sources 70, 74 are respectively connected to the first and second ends 12, 13, respectively, of the applicator as shown in
More specifically, if both RF power sources are used as in
Alternatively, if only the first RF power source is used as in
The termination impedance 79 can be any electrical impedance. For example, the termination impedance 79 can be an electrical short circuit or a conventional tuning plunger, and optionally it can be movable along the longitudinal dimension L of the inner and outer conductors 14, 20.
In operation, the RF power supplied by the first, and optionally second, RF power sources 70, 74 produces an electromagnetic field in the space 18 between the respective main portions 15, 21 of the inner and outer conductors 14, 20 that propagates as an RF electromagnetic wave along the length of such space 18 between the first and second ends 12, 13 of the applicator.
If only one RF power source 70 is connected to the inner and outer conductors as in
Alternatively, if two independent (i.e., not phase-coherent) RF power sources 70, 74 are connected to opposite end portions of the inner and outer conductors as in
All outputs of the power sources 70, 74 are shown in
When we describe an output of an RF power source 70, 74 as connected to any of the conductors 14, 20 of the applicator, the connection can be through intermediate components, such as an RF transformer, an impedance matching network, or a hollow waveguide transmission line connected between an RF power source and one or more conductors of the applicator. The only requirement of the invention is that the connection of the RF power source 70 or 74 to the applicator—with or without intermediate components—is configured such that the RF power source produces an RF voltage between the inner conductor 14 and the outer conductor 20.
To accommodate thermal expansion of the inner and outer conductors 14, 20, the aforesaid electrical connection of RF power to the inner and outer conductors optionally includes conventional sliding finger contacts.
If the RF power signal produced by the RF power source 70, 74 is in the microwave frequency range, a hollow waveguide can be an efficient means for connecting the output of the RF power source to the inner and outer conductors. In general, the hollow waveguide is coupled to the output of the RF power source so that the RF power produced by the RF power source propagates as an electromagnetic wave through the interior of the waveguide. The hollow waveguide is coupled to the respective first end portions 15, 21 of the inner and outer conductors so that the RF wave in the waveguide produces an RF voltage between the inner conductor 14 and each outer conductor 20 of the applicator. Any conventional coupler for extracting an RF voltage from a hollow waveguide can be used.
It is important to emphasize that the use of a hollow waveguide to connect the output of an RF power source to the respective first end portions 15, 21 of the inner and outer conductors does not imply that the applicator 10 is similar to a hollow waveguide. As stated at the end of the preceding section of this patent specification entitled “1. Two-Conductor Applicator”, our applicator 10 has a plurality of RF-powered conductors 14, 20. In contrast, the waveguide of a hollow waveguide applicator is not RF-powered, but merely functions as an electrically conductive boundary to confine a wave propagating through the dielectric that the hollow waveguide surrounds. This difference is responsible for an important advantage of the invention, which is that it has no cutoff frequency and no required minimum dimension.
As stated above, an array of multiple applicators 10 optionally can be positioned within the vacuum enclosure of the plasma chamber. Each respective applicator can be connected to a distinct respective first power source 70 and, optionally, a distinct respective second power source 74. Alternatively, multiple applicators can be connected in parallel to the same power source. Alternatively, multiple applicators can be connected in series to a single power source 70 or in series between first and second power sources 70, 74. If multiple applicators are connected in series, then at the junction between any two of the applicators, each of the two applicators functions as a termination impedance for the other applicator.
If the apertures 30 have a transverse width that exceeds a certain value (which is a function of chamber pressure and process gas composition), a gas discharge can form within the apertures if gas within the interior of the plasma chamber is permitted to enter the apertures. Such gas discharge would electrically short-circuit the apertures, thereby preventing the applicator from radiating RF power through the apertures.
To permit the use of larger apertures without risk of gas discharge within the apertures, the applicator 10 preferably includes a dielectric cover 40 and first and second sealing apparatuses 52, 53.
The plasma chamber includes a vacuum enclosure 60 that encloses the interior 61 of the plasma chamber. The vacuum enclosure 60 includes one or more walls that collectively provide an air-tight enclosure that enables a vacuum to be maintained in the interior 61 if a vacuum pump is coupled to the interior. The dielectric cover includes a main portion 41 that extends between first and second end portions 42, 43. The main portion of the dielectric cover is positioned within said interior 61 of the plasma chamber. The main portion 21 of the outer conductor 20 is positioned within the main portion 41 of the dielectric cover 40.
The first sealing apparatus 52 abuts the first end portion 42 of the dielectric cover 40, and the second sealing apparatus 53 abuts the second end portion 43 of the dielectric cover. The first and second sealing apparatuses, the dielectric cover and the vacuum enclosure 60 in combination prevent fluid communication between the main portion of the outer conductor and the interior 61 of the plasma chamber. Consequently, the dielectric cover 40 prevents gas (or plasma) within the plasma chamber from entering the apertures 30.
Typically it does not matter whether the first and second sealing apparatuses 52, 53 are dielectric or conductive because they typically are not electrically coupled to the inner conductor 14 or outer conductor 20.
In the embodiments illustrated in
An advantage of the O-rings 52, 53 illustrated in
Depending on the types of materials of which the inner and outer conductors 14, 20 and the dielectric cover 40 are composed, the inner and outer conductors may have a higher thermal expansion coefficient than the dielectric cover. If so, the outer conductor preferably is mounted so that it is free to slide longitudinally within the dielectric cover, thereby accommodating thermal expansion of the outer conductor while minimizing thermal stress in the dielectric cover.
As described above, the termination impedance 79 can be any electrical impedance. For example, the termination impedance 79 can simply be a conductor (i.e., an electrical short circuit) connected between the second end portion of the inner conductor 14 and the second end portion of the outer conductor 20 as shown in
In the alternative design of
In a variation of this design (not shown), the dielectric end cap 58 can be integral and contiguous with the second end portion 43 of the dielectric cover, thereby providing the hermetic seal described in the preceding paragraph without need for the O-ring 59.
The space 18 between the main portion 15 of the inner conductor 14 and the main portion 21 of the outer conductor 20 can be occupied by any type of dielectric, which can be any combination of gas, liquid or solid dielectrics. To maximize the efficiency of the applicator, the dielectric occupying the space 18 preferably is a material having a low absorption of energy at the operating frequencies of the RF power sources. For example, deionized water would be a suitable dielectric at certain RF frequencies, but it would be a bad choice if the RF power source were operated at 2.4 GHz because water absorbs radiation at that frequency.
Air typically is a suitable dielectric for the space 18 between the main portion 15 of the inner conductor 14 and the main portion 21 of the outer conductor 20. Therefore, the space 18 can simply be open to ambient atmosphere, as shown in
The dielectric occupying the space 18 optionally can be a fluid that is pumped through the space 18 in order to absorb heat from the inner and outer conductors 14, 20. The fluid can be a liquid or a gas such as air or nitrogen. After flowing through the space 18, the fluid can be discharged outside the plasma chamber or recirculated through a heat exchanger, thereby cooling the applicator. Such cooling is beneficial because the dielectric cover 40 is heated by the plasma in the plasma chamber, and heat flows from the dielectric cover to the outer conductor 20. In addition, the inner conductor 14 is heated by resistive heating caused by RF current flow through the inner conductor.
The inner conductor 14 can be solid or hollow. If it is hollow, additional cooling of the inner conductor can be provided by pumping a coolant fluid such as water through its hollow interior. There is essentially no RF field in the interior of the inner conductor, so the electrical properties of this coolant fluid are unimportant.
If the space 18 is occupied by a fluid as just described, it may be desirable to stabilize the position of the inner conductor 14 relative to the outer conductor 20 by mechanically connecting one or more support members (not shown) between the inner conductor 14 and the outer conductor 20. The support members preferably are a dielectric material such as PTFE (polytetrafluoroethene). Alternatively, the support members can be electrically conductive if the support members have a small transverse width, thereby minimizing the disruption of the electromagnetic field within the space 18 by the electrical conductivity of the support members.
If the space 18 between the inner and outer conductors is occupied by a gas, it is desirable to avoid any gas discharge in the space 18 in order to maximize the efficiency and uniformity of the radiation of RF power from the applicator. The maximum level of RF power that can be supplied by the RF power sources 70, 74 without causing such gas discharge increases with the pressure of the gas within the space 18. Therefore, it is desirable to maintain the gas within the space 18 at a pressure (such as atmospheric pressure) that is much higher than the very low pressure within the plasma chamber.
As explained above, the first and second sealing apparatuses 52, 53 abut the dielectric cover 40 such that the sealing apparatuses, the dielectric cover and the vacuum enclosure 60 in combination prevent fluid communication between the main portion 21 of the outer conductor and the interior 61 of the plasma chamber. Consequently, the sealing apparatuses 52, 53, the dielectric cover 40 and the vacuum enclosure 60 in combination provide a gas-tight seal between said space and the interior of the plasma chamber so as to enable a pressure differential between said space and the interior of the plasma chamber. This combination 52, 53, 40, 60 thereby enables the gas within the space 18 to be maintained at a pressure (such as atmospheric pressure) that is much higher than the very low pressure within the interior of the plasma chamber. Such higher pressure can be established, for example, by coupling the space 18 to a gas pump or by providing an opening from the space 18 to the ambient atmosphere, as shown in
One advantage of the invention is that the spatial uniformity of radiated power or the spatial uniformity of the plasma can be optimized by altering the relative sizes, spacing or orientations of apertures 30 in different portions of the main portion 21 of the outer conductor 20.
One reason this is advantageous is that the RF electromagnetic wave propagating through the space 18 between the respective main portions 15, 21 of the inner and outer conductors has a longitudinal non-uniformity in power density. Specifically, the RF power density within the space 18 decreases progressively with distance along the longitudinal dimension L of the applicator from the one or more points on the inner and outer conductors at which they are connected to an RF power source 70, 74.
For example, in the embodiment of
As will be explained below, this longitudinal non-uniformity in RF power density within the space 18 inside the applicator can be offset by a corresponding non-uniformity in the relative sizes, spacing or orientations of apertures 30 along the longitudinal dimension L of the main portion 21 of the outer conductor.
Within the main portion 21 of the outer conductor 20, the direction of electric current flow is essentially along the path between the first end portion 24 (connected to the first power source 70) and the second end portion 25 (connected either to the second power source 74, or, if there is no second power source, preferably to a termination impedance 79). Therefore, the electric field within each aperture 30 is oriented essentially parallel to the dimension of the outer conductor that extends between the first end portion 24 and the second end portion 25. We refer to this dimension as the “longitudinal dimension” of the outer conductor, regardless of whether the outer conductor is straight or curved, and regardless of whether the transverse cross section of the outer conductor is rectangular, circular, elliptical, or any other shape. We use the term “circumferential dimension” to mean a dimension along the outer surface 23 of the outer conductor that is perpendicular to the longitudinal dimension of the outer conductor. The longitudinal dimension is illustrated by the axis L in
The amount of RF power radiated by any particular smaller portion within the main portion 21 of the outer conductor 20 is roughly proportional to the area of the inner surface 22 within that particular portion of the outer conductor that is occupied by apertures 30. If it is desired to control the spatial distribution of the radiated RF power, the amount of RF power radiated by a first portion relative to a second portion of the main portion 21 of the outer conductor can be increased by: (1) increasing the area of each individual aperture within the first portion, (2) increasing the number of apertures within the first portion (for example, by decreasing the spacing between apertures within the first portion), or (3) otherwise increasing the total area occupied by the apertures in the first portion relative to the second portion.
The principles of the preceding paragraph can be applied to compensate for the previously explained progressive decline in plasma density within the space 18 between the inner and outer conductors as a function of increasing longitudinal distance from the one or more points at which the outer conductor is connected to an RF power source 70, 74. Specifically, with increasing longitudinal distance from the one or more points on the outer conductor at which the outer conductor is connected to an RF power source, the apertures 30 can have: (1) increasing area of each individual aperture, (2) decreasing spacing between apertures, or (3) otherwise increasing the fraction of the surface area of the outer conductor that is occupied by the apertures.
In the embodiment of
Alternatively, for the embodiment of
Because the electric field within each aperture is parallel to the longitudinal dimension L of the outer conductor, the RF power radiated through an individual aperture increases by a greater amount in response to increasing the width of that aperture along the longitudinal dimension L in comparison with increasing the width of that aperture along the circumferential dimension C. Therefore, if one or more apertures 30 have a non-circular cross-section, the amount of RF power radiated through the apertures will increase as the orientation of the apertures is changed so as to increase the angle between the long axis of each aperture and the longitudinal dimension L of the outer conductor, or, equivalently, so as to decrease the angle between the long axis of each aperture and the circumferential dimension C of the outer conductor.
If it is desired to control the spatial distribution of the radiated RF power, the amount of RF power radiated by a first particular portion relative to a second particular portion of the main portion 21 of the outer conductor can be increased by orienting the apertures within the first portion so that the respective angle between the long axis of each respective aperture within the first portion of the outer conductor and the longitudinal dimension L of the outer conductor are greater than corresponding angles for the apertures in the second portion of the outer conductor.
More specifically, the orientation of the apertures can vary progressively to compensate for the previously explained progressive decline in plasma density within the applicator as a function of increasing longitudinal distance from the one or more points at which the outer conductor is connected to an RF power source 70, 74. The apertures 30 at progressively increasing longitudinal distances from the RF power source connection points on the outer conductor can be oriented with progressively increasing angles between the long axis of each respective aperture and the longitudinal dimension L of the outer conductor or, equivalently, progressively decreasing angles between the long axis of each respective aperture and the circumferential dimension C of the outer conductor.
Using the embodiment of
In other words, if the apertures 30 near the center of the main portion 21 of the outer conductor have the area and orientation shown in
For example, the apertures near the center of the main portion 21 of the outer conductor (section lines B-B) can be oriented with their long axis at a 90-degree angle relative to the longitudinal dimension L of the outer conductor or, equivalently, at a zero degree angle relative to the circumferential dimension C of the outer conductor as shown in
Alternatively, in the embodiment of
In other words, if the apertures 30 near the second end portion 25 (section lines B-B) of the outer conductor have the area and orientation shown in
For example, the apertures near the second end portion 24 of the outer conductor (section lines B-B) can be oriented with their long axis at a 90-degree angle relative to the longitudinal dimension L of the outer conductor or, equivalently, at a zero degree angle relative to the circumferential dimension C of the outer conductor as shown in
In summary, the principles explained above can be characterized as follows in terms of a first portion (section lines B-B) and a second portion (section lines A-A) of the main portion 21 of the outer conductor 20, wherein the first and second portions are defined such that the first portion is closer than the second portion to the first end portion 24 of the outer conductor, and the second portion is closer than the first portion to the center of the outer conductor. In one embodiment, each aperture 30 in the first portion has a smaller area than each aperture in the second portion. Alternatively, the apertures in the first portion have a larger spacing between adjacent apertures than the apertures in the second portion. Alternatively, each respective aperture in the first and second portions is characterized by a respective angle at which its respective long axis is oriented relative to the circumferential dimension C of the outer conductor, and said respective angle of each respective aperture in the first portion is greater than said respective angle of each respective aperture in the second portion.
Alternatively, such principles can be characterized as follows in terms of a plurality of apertures 30 at successive positions progressing from a first position to a second position on the main portion 21 of the outer conductor. The first and second positions are defined such that the first position is closer than the second position to the first end portion 24 of the outer conductor, and the second position is closer than the first position to the center of the outer conductor. In one embodiment, each respective aperture at said respective positions progressing from the first position to the second position has a progressively increasing area. Alternatively, each respective aperture at said respective positions progressing from the first position to the second position has a progressively decreasing spacing between adjacent apertures. Alternatively, each respective aperture at said respective positions progressing from the first position to the second position has a progressively has a long axis at a progressively decreasing angle relative to the circumferential dimension C of the outer conductor.
More generally, the spatial distribution of the RF power radiated by the applicator can be optimized or altered by altering the relative sizes, spacings or orientations of the apertures at different positions along the main portion 21 of the outer conductor 20.
However, it must be emphasized that the non-uniformity of the sizes, spacings or orientations of the apertures as just described is an optional feature of the invention, not a requirement. For example, the sizes, spacings and orientations of the apertures can be uniform as shown in
Because each aperture 30 imposes a higher impedance to electrical current than the conductive material surrounding the aperture, the electrical current flowing through the outer conductor 20 will tend to bypass the apertures if there is a straight path for current flow along the longitudinal dimension L of the outer conductor that is not interrupted by any apertures, as in the embodiment of
The embodiments of
The inner conductor 14 has a main portion 15 extending between first and second end portions 16, 17. Each respective outer conductor 20a, 20b has a respective main portion 21a, 21b extending between first and second end portions 24, 25. (These definitions of the respective main portions and end portions are the same as for the first aspect or first embodiment of the invention shown in
We refer to the applicator 10 as having opposite first and second ends 12, 13, such that the first end 12 of the applicator is adjacent the respective first end portions 16, 24 of the inner and outer conductors, and the second end 13 of the applicator is adjacent the respective second end portions 17, 25 of the inner and outer conductors.
The main portion 15 of the inner conductor is positioned between, and spaced away from, the respective main portions 21a, 21b of the first and second outer conductors 20a, 20b. The respective first end portions 24 of each of the two outer conductors 20 are electrically connected together (shown schematically in
Optionally but preferably, the main portions of the inner and outer conductors are arranged symmetrically such that the main portion 15 of the inner conductor 14 is midway between the respective main portions 21 of the two outer conductors 20, and the respective main portions of the two outer conductors are either identical or are mirror images of each other, by which we mean they are symmetrical relative to the main portion of the inner conductor.
The main portion 21a, 21b of each respective outer conductor 20a, 20b includes a plurality of apertures 30 that extend between the respective inner and outer surfaces 22, 23 of the respective main portion of the respective outer conductor. The inner surface 22 faces the main portion 15 of the inner conductor. In embodiments that include a dielectric cover 40 as described above under the heading “3. Dielectric Cover and Dielectric Between Conductors”, the outer surface 23 of the main portion of each respective outer conductor 21a, 21b faces the inner surface 44 of the main portion 41 of the dielectric cover.
In operation, when the output of an RF power source 70, 74 is connected between the inner conductor 14 and the two outer conductors 20, an RF electromagnetic wave propagates through the space 18 between the main portions 15, 21 of the inner and outer conductors. A portion of the RF power in this electromagnetic wave radiates from the apertures 30, thereby radiating RF power outside the applicator.
If the applicator 10 is within the vacuum enclosure 60 of a plasma chamber as shown in
The invention is especially advantageous for use in a plasma chamber 60 that processes two workpieces simultaneously. Because the respective main portions 21 of the two outer conductors 20 face opposite directions, the applicator 10 radiates RF power with a bidirectional radiation pattern. Therefore, an applicator 10 according to the invention can be positioned between two workpieces 62 within a plasma chamber 60 as shown in
As in the previously discussed embodiments of
In addition to radiating RF power through the apertures 30 as described above, the applicator 10 will radiate RF power through the open sides between the two outer conductors if the transverse width of the main portion of each outer conductor is comparable to or less than the spacing between the respective main portions of the two outer conductors. Conversely, RF radiation in this direction will be minimal if the transverse width of the main portion of each outer conductor is at least two times the spacing between the respective main portions of the two outer conductors. This is preferred to facilitate control of the spatial distribution of the RF radiation as described in the preceding section of this patent specification entitled “4. Optimizing Spatial Distribution of RF Radiation”.
The applicator preferably includes a dielectric cover 40 and first and second sealing apparatuses 52, 53 to prevent plasma from entering the apertures 30. Specifically, the main portion 41 of the dielectric cover is positioned within the interior 61 of the plasma chamber, and the respective main portions 21 of each of the outer conductors are positioned within the main portion 41 of the dielectric cover. The first and second sealing apparatuses 52, 53 respectively abut the first and second end portions 42, 43 of the dielectric cover. The first and second sealing apparatuses, the dielectric cover and the vacuum enclosure 60 in combination prevent fluid communication between the interior of the plasma chamber and the respective main portions of the first and second outer conductors. Further details regarding the dielectric cover and sealing member are the same as explained in the preceding section of this patent specification entitled “3. Dielectric Cover and Dielectric Between Conductors”.
The invention does not require the inner and outer conductors 14, 20 to have any specific shapes. In
The features, design considerations, and advantages of the invention described above under the headings “2. Connections to RF Power Source”, “3. Dielectric Cover and Dielectric Between Conductors” and “4. Optimizing Spatial Distribution of RF Radiation” remain applicable to this second aspect or embodiment of the invention having two outer conductors.
This patent application claims the benefit of U.S. Provisional Application No. 61/499,205 filed Jun. 21, 2011.
| Number | Date | Country | |
|---|---|---|---|
| 61499205 | Jun 2011 | US |
