Patent Application
20150207080
The present invention relates to a transparent electrode, an electronic device, and a method for manufacturing a transparent electrode. More specifically, the present invention relates to a transparent electrode having both conductivity and optical transparency, an electronic device having such a transparent electrode, and a method for manufacturing such a transparent electrode.
Organic electroluminescent devices, which operate by electroluminescence (hereinafter abbreviated as EL) from organic materials, (what are called organic EL devices), are completely solid devices of a thin film type capable of emitting light at a low voltage ranging from several V to several 10 V and have many good characteristics such as high luminance, high emission efficiency, small thickness, and lightweight. In recent years, therefore, they have received attention as backlights for a variety of displays, display boards for signboards, emergency lights, and the like, and surface emitting devices for illumination light sources, etc.
Such organic electroluminescent devices have a structure including two electrodes and a light-emitting layer including an organic material placed between the electrodes, in which light produced by the light-emitting layer is extracted through the electrode. Therefore, at least one of the two electrodes is formed as a transparent electrode.
Transparent electrodes generally used include oxide semiconductor materials such as ITO (indium tin oxide, molecular formula: SnO2—In2O3). A stack of ITO and silver layers is also studied to provide lower resistance (e.g., refer to Patent Literatures 1 and 2 listed below). Unfortunately, ITO, which contains a rare metal, indium, is a high-cost material and needs to be annealed at about 300° C. for resistance reduction after it is deposited as a film. Therefore, there are also proposed a thin film of a high-conductivity metal material such as silver and a film of a mixture of silver and aluminum, which can ensure conductivity with a thickness smaller than that of a film of silver alone (e.g., refer to Patent Literature 3 listed below).
However, even when high-conductivity materials such as silver and aluminum are used, it is difficult to form transparent electrodes having both sufficient conductivity and sufficient optical transparency.
It is therefore an object of the present invention to provide a transparent electrode having both sufficient conductivity and sufficient optical transparency, to provide an electronic device that is produced with such a transparent electrode so that it has improved performance, and to provide a method for manufacturing such a transparent electrode.
The transparent electrode of the present invention provided to achieve the object has the following features.
The transparent electrode comprises: a nitrogen-containing layer comprising a compound that contains a nitrogen atom or atoms having an unshared electron pair or pairs and has an effective lone pair content n/M of 2.0×10−3 or more, wherein n represents the number of unshared electron pairs that neither contribute to aromaticity nor are coordinated to metal among the unshared electron pair or pairs of the nitrogen atom or atoms, and M represents the molecular weight of the compound; an electrode layer comprising silver as a main component; and a high surface energy material layer that comprises a high surface energy material having a sublimation enthalpy higher than that of silver and is provided between and in contact with the nitrogen-containing layer and the electrode layer.
The electronic device of the present invention is an electronic device having the transparent electrode.
The method for manufacturing a transparent electrode of the present invention is a method for manufacturing a transparent electrode, the method comprising the steps of: forming a nitrogen-containing layer using a compound that contains a nitrogen atom or atoms having an unshared electron pair or pairs and has an effective lone pair content n/M of 2.0×10−3 or more, wherein n represents the number of unshared electron pairs that neither contribute to aromaticity nor are coordinated to metal among the unshared electron pair or pairs of the nitrogen atom or atoms, and M represents the molecular weight of the compound; forming a high surface energy material layer in contact with the nitrogen-containing layer using a high surface energy material having a sublimation enthalpy higher than that of silver; and forming an electrode layer on the nitrogen-containing layer provided with the high surface energy material layer, the electrode layer comprising silver as a main component.
The transparent electrode, configured as stated above, includes the nitrogen-containing layer including a nitrogen atom-containing compound; the high surface energy material layer; and the electrode layer that includes silver as a main component and is provided adjacent to the nitrogen-containing layer with the high surface energy material layer interposed therebetween. In the electrode layer including silver as a main component, therefore, silver is reduced in diffusion length and inhibited from aggregating by the interaction with the high surface energy material layer and by the interaction with nitrogen atoms in the nitrogen-containing layer. In the electrode layer, therefore, a thin silver film can be formed in a monolayer growth mode (Frank van der Merwe (FM) mode) although in general, silver can easily form isolated islands due to nucleation growth (Volumer Weber (VW) mode). Thus, the electrode layer can be obtained with a uniform thickness even when it has a small thickness.
In particular, the effective lone pair content [n/M] is used as an index to the stability of the ability of silver in the electrode layer to bond the nitrogen-containing layer, and a compound with an effective lone pair content of 2.0×10−3 or more (2.0×10−3≦[n/M]) is used to form the nitrogen-containing layer. This makes it possible to form the nitrogen-containing layer capable of reliably producing the effect of “inhibiting the aggregation of silver”. As described in detail in Examples below, this effect has also been demonstrated from the fact that even when a very thin electrode layer with a thickness of 6 nm is formed on such a nitrogen-containing layer with a high surface energy material layer interposed therebetween thin enough not to inhibit optical transparency, the resulting electrode layer has its sheet resistance reduced by almost two orders of magnitude.
Thus it is ensured that the electrode layer in the transparent electrode can be thin so that it will reliably have optical transparency, and can also have uniform thickness so that it will have reliable conductivity. Therefore, the transparent electrode including silver can have both higher conductivity and higher optical transparency.
As described above, the present invention makes it possible to improve both the conductivity and the optical transparency of transparent electrodes and to improve the performance of electronic devices using such transparent electrodes. The manufacturing method of the present invention makes it possible to obtain such transparent electrodes having both higher conductivity and higher optical transparency.
Hereinafter, embodiments of the present invention will be described in the order shown below with reference to the drawings.
1. Transparent electrode
2. Applications of transparent electrode
3. First example of organic electroluminescent device (top emission type)
4. Second example of organic electroluminescent device (bottom emission type)
5. Third example of organic electroluminescent device (double-sided emission type)
6. Fourth example of organic electroluminescent device (inverted structure)
7. Applications of organic electroluminescent device
8. Illumination device 1
9. Illumination device 2
<<1. Transparent Electrode>>
Hereinafter, the substrate 11 on which the transparent electrode 1 with such a multilayer structure is provided, and the nitrogen-containing layer 1a, the high surface energy material layer A, and the electrode layer 1b as components of the transparent electrode 1 will be described in detail, respectively, with respect to their features. As used herein, the term “transparent” for the transparent electrode 1 of the present invention means that the light transmittance at a wavelength of 550 nm is at least 50%.
<Substrate 11>
The substrate 11 on which the transparent electrode 1 of the present invention is formed may be, for example, but not limited to, glass, plastic, or the like. The substrate 11 may be transparent or opaque. The substrate 11 is preferably transparent when the transparent electrode 1 of the present invention is used to form an electronic device in which light is extracted from the substrate 11 side. Glass, quartz, or a transparent resin film is preferably used to form the transparent substrate 11. In particular, the substrate 11 is preferably a resin film, which can impart flexibility to the transparent electrode 1 and an electronic device, such as an organic electroluminescent device, formed therewith.
The glass may be, for example, silica glass, soda lime silica glass, lead glass, borosilicate glass, alkali-free glass, or the like. In view of adhesion to the nitrogen-containing layer 1a, durability, and smoothness, if necessary, the surface of these glass materials may be subjected to a physical process such as polishing, or a coating of an inorganic or organic material or a hybrid coating of a combination thereof may be formed on the surface of these glass materials.
The resin film may be made of, for example, polyester such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose esters such as cellulose diacetate, cellulose triacetate (TAC), cellulose acetate butyrate, cellulose acetate propionate (CAP), cellulose acetate phthalate, and cellulose nitrate, or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide, polyether sulfone (PES), polyphenylene sulfide, polysulfones, polyether imide, polyether ketone imide, polyamide, fluororesin, nylon, polymethyl methacrylate, acrylic or polyarylate, or cycloolefin resin such as ARTON (trade name, manufactured by JSR Corporation) or APEL (trade name, manufactured by Mitsui Chemicals, Inc.).
A coating of an inorganic or organic material or a hybrid coating of a combination thereof may be formed on the surface of the resin film. Such a coating or hybrid coating is preferably a barrier film (also called barrier coating or the like) having a water-vapor permeability of 0.01 g/(m2·24 hr) or less as measured by the method according to JIS-K-7129-1992 (25±0.5° C., relative humidity 90±2% RH). Such a coating or hybrid coating is more preferably a high barrier film having an oxygen permeability of 10−3 ml/(m2·24 hr·atm) or less as measured by the method according to JIS-K-7126-1987 and a water-vapor permeability of 10−5 g/(m2·24 hr) or less.
Such a barrier film may be made of any material having the function of inhibiting the infiltration of water, oxygen, and other substances capable of inducing the degradation of the device. For example, silicon oxide, silicon dioxide, silicon nitride, or the like may be used to form such a barrier film. The barrier film more preferably has a multilayer structure of such an inorganic layer and a layer of an organic material (organic layer) so that the brittleness of the barrier film can be reduced. The inorganic and organic layers may be stacked in any order. Preferably, both are alternately stacked a plurality of times.
The barrier film may be formed using any method such vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, ionized-cluster beam technique, ion plating, plasma polymerization, atmospheric pressure plasma polymerization, plasma CVD, laser CVD, thermal CVD, or coating. The atmospheric pressure plasma polymerization described in JP 2004-68143 A is particularly preferred.
On the other hand, when opaque, the substrate 11 may be a substrate of a metal such as aluminum or stainless steel, an opaque resin substrate, a ceramic substrate, or the like. These substrates may be in the form of a flexible film.
<Nitrogen-Containing Layer 1a>
The nitrogen-containing layer 1a, which is provided adjacent to the high surface energy material layer A, includes a nitrogen atom (N)-containing compound. The nitrogen-containing layer 1a may be partially in contact with the electrode layer 1b. The compound used to form the nitrogen-containing layer 1a is characterized by having an “effective lone pair” content in the specified range, wherein the “effective lone pair” is defined as the lone pair of a nitrogen atom capable of forming a stable bond with silver, which is a main material used to form the electrode layer 1b, among the nitrogen atoms in the compound.
As used herein, the term “effective lone pair” refers to an unshared electron pair that neither contributes to aromaticity nor is coordinated to metal among the unshared electron pairs of the nitrogen atom(s) in the compound. As used herein, the term “aromaticity” refers to an unsaturated cyclic structure having π electron-containing atoms arranged in the form of a ring, what is called aromaticity according to the “Hueckel rule”, which requires the condition that the number of electrons in the π electron system on the ring is 4n+2, wherein n is 0 or a natural number.
Regardless of whether or not the nitrogen atom having the lone pair is a heteroatom in the aromatic ring, the “effective lone pair” is selected depending on whether or not the lone pair of the nitrogen atom contributes to the aromaticity. For example, even if a certain nitrogen atom is a heteroatom in an aromatic ring, the nitrogen atom can have a lone pair not contributing to the aromaticity, and such a lone pair can be counted as an “effective lone pair”. On the other hand, even if a certain nitrogen atom is not a heteroatom in an aromatic ring, all the lone pairs of the nitrogen atom can contribute to the aromaticity, and the lone pairs of the nitrogen atom will not be counted as “effective lone pairs”. In each compound, the number n of the “effective lone pairs” equals the number of nitrogen atoms with the “effective lone pair”.
Specifically, in this embodiment, for example, the effective lone pair content [n/M] is defined as the ratio of the number n of “effective lone pairs” to the molecular weight M of such a compound. The nitrogen-containing layer 1a is also characterized by including a compound that is so selected that it satisfies the relation 2.0×10−3≦[n/M]. The nitrogen-containing layer 1a is preferably such that its effective lone pair content [n/M], defined as stated above, is in the range of 3.9×10−3 or more (3.9×10−3≦[n/M]), more preferably such that its effective lone pair content [n/M] is in the range of 6.5×10−3 or more (6.5×10−3≦[n/M]).
The nitrogen-containing layer 1a only has to include a compound whose effective lone pair content [n/M] is in the specified range. The nitrogen-containing layer 1a may be composed of only such a compound, or a mixture of such a compound and an additional compound may be used to form the nitrogen-containing layer 1a. The additional compound does not need to contain any nitrogen atom and does not need to have an effective lone pair content [n/M] in the specified range.
When the nitrogen-containing layer 1a includes a plurality of compounds, the molecular weight M of the mixture of these compounds may be calculated based on the mixing ratio of the compounds, and the ratio of the total number n of “effective lone pairs” to the molecular weight M may be calculated as an average effective lone pair content [n/M]. This value is preferably in the specified range. In other words, the nitrogen-containing layer 1a itself preferably has an effective lone pair content [n/M] in the specified range.
When the nitrogen-containing layer 1a includes a plurality of compounds, the mixing ratio (content) of the compounds may vary in the thicknesswise direction of the layer. In this case, a surface part of the nitrogen-containing layer 1a on the side in contact with the high surface energy material layer A and the electrode layer 1b should have an effective lone pair content [n/M] in the specified range.
[Compound 1]
Hereinafter, examples (Nos. 1 to 45) of the compound whose effective lone pair content [n/M] satisfies 2.0×10−3≦[n/M] will be shown, which may each be used to form the nitrogen-containing layer 1a. In each of compounds Nos. 1 to 45, the nitrogen atom having an “effective lone pair” is marked by a circle. Table 1 below shows the molecular weight M of compound Nos. 1 to 45, the number n of “effective lone pairs” in each of the compounds, and the effective lone pair content [n/M] of each compound. In compound No. 33 shown below, copper phthalocyanine, lone pairs that are not coordinated to copper are counted as “effective lone pairs” among the lone pairs of the nitrogen atoms.
Table 1 shows corresponding formulae, which are used when the illustrative compounds also belong to the groups of other compounds represented by formulae (1) to (8a) shown below.
[Compound 2]
Besides the compound having an effective lone pair content [n/M] in the specified range, the nitrogen-containing layer 1a may include a compound having the properties necessary for each electronic device to be formed with the transparent electrode 1 having the nitrogen-containing layer 1a. For example, when the transparent electrode 1 is used as an electrode for an organic electroluminescent device, a compound represented by any of formulae (1) to (8a) shown below may be used to form the nitrogen-containing layer 1a in view of the film formability or electron transport properties.
The compounds represented by formulae (1) to (8a) also include compounds having an effective lone pair content [n/M] in the specified range. Such compounds may be used alone to form the nitrogen-containing layer 1a (see Table 1 above). On the other hand, the compounds represented by formulae (1) to (8a) include compounds having an effective lone pair content [n/M] out of the specified range. Any of such compounds may be mixed with a compound having an effective lone pair content [n/M] in the specified range to form the nitrogen-containing layer 1a.
[Chemical Formula 17]
In formula (1), E101 to E108 each represent —C(R12)= or —N═, and at least one of E101 to E108 is —N═. In formula (1), R11 and R12 each represent a hydrogen atom or a substituent.
The substituent may be, for example, alkyl (e.g., methyl, ethyl, propyl, isopropyl, tert-butyl, pentyl, pentyl, hexyl, octyl, dodecyl, tridecyl, tetradecyl, or pentadecyl), cycloalkyl (e.g., cyclopentyl or cyclohexyl), alkenyl (e.g., vinyl or allyl), alkynyl (e.g., ethynyl or propargyl), an aromatic hydrocarbon group (also called an aromatic carbon ring group, aryl group, or the like, e.g., phenyl, p-chlorophenyl, mesityl, tolyl, xylyl, naphthyl, anthryl, azulenyl, acenaphthenyl, fluorenyl, phenanthryl, indenyl, pyrenyl, or biphenylyl), an aromatic heterocyclic group (e.g., furyl, thienyl, pyridyl, pyridazinyl, pyrimidinyl, pyrazinyl, triazinyl, imidazolyl, pyrazolyl, thiazolyl, quinazolinyl, carbazolyl, carbolinyl, diazacarbazolyl (referring to a moiety derived from the carbolinyl by replacing any one of carbon atoms in the carboline ring with a nitrogen atom), or phthalazinyl), a heterocyclic group (e.g., pyrrolidyl, imidazolidyl, morpholinyl, or oxazolidyl), alkoxy (e.g., methoxy, ethoxy, propyloxy, pentyloxy, hexyloxy, octyloxy, or dodecyloxy), cycloalkoxy (e.g., cyclopentyloxy or cyclohexyloxy), aryloxy (e.g., phenoxy or naphthyloxy), alkylthio (e.g., methylthio, ethylthio, propylthio, pentylthio, hexylthio, octylthio, or dodecylthio), cycloalkylthio (e.g., cyclopentylthio or cyclohexylthio), arylthio (e.g., phenylthio or naphthylthio), alkoxycarbonyl (e.g., methyloxycarbonyl, ethyloxycarbonyl, butyloxycarbonyl, octyloxycarbonyl, or dodecyloxycarbonyl), aryloxycarbonyl (e.g., phenyloxycarbonyl or naphthyloxycarbonyl), sulfamoyl (e.g., aminosulfonyl, methylaminosulfonyl, dimethylaminosulfonyl, butylaminosulfonyl, hexylaminosulfonyl, cyclohexylaminosulfonyl, octylaminosulfonyl, dodecylaminosulfonyl, phenylaminosulfonyl, naphthylaminosulfonyl, or 2-pyridylaminosulfonyl), acyl (e.g., acetyl, ethylcarbonyl, propylcarbonyl, pentylcarbonyl, cyclohexylcarbonyl, octylcarbonyl, 2-ethylhexylcarbonyl, dodecylcarbonyl, phenylcarbonyl, naphthylcarbonyl, or pyridylcarbonyl), acyloxy (e.g., acetyloxy, ethylcarbonyloxy, butylcarbonyloxy, octylcarbonyloxy, dodecylcarbonyloxy, or phenylcarbonyloxy), amido (e.g., methylcarbonylamino, ethylcarbonylamino, dimethylcarbonylamino, propylcarbonylamino, pentylcarbonylamino, cyclohexylcarbonylamino, 2-ethylhexylcarbonylamino, octylcarbonylamino, dodecylcarbonylamino, phenylcarbonylamino, or naphthylcarbonylamino), carbamoyl (e.g., aminocarbonyl, methylaminocarbonyl, dimethylaminocarbonyl, propylaminocarbonyl, pentylaminocarbonyl, cyclohexylaminocarbonyl, octylaminocarbonyl, 2-ethylhexylaminocarbonyl, dodecylaminocarbonyl, phenylaminocarbonyl, naphthylaminocarbonyl, or 2-pyridylaminocarbonyl), ureido (e.g., methylureido, ethylureido, pentylureido, cyclohexylureido, octylureido, dodecylureido, phenylureido, naphthylureido, or 2-pyridylaminoureido), sulfinyl (e.g., methylsulfinyl, ethylsulfinyl, butylsulfinyl, cyclohexylsulfinyl, 2-ethylhexylsulfinyl, dodecylsulfinyl, phenylsulfinyl, naphthylsulfinyl, or 2-pyridylsulfinyl), alkylsulfonyl (e.g., methylsulfonyl, ethylsulfonyl, butylsulfonyl, cyclohexylsulfonyl, 2-ethylhexylsulfonyl, or dodecylsulfonyl), arylsulfonyl or heteroarylsulfonyl (e.g., phenylsulfonyl, naphthylsulfonyl, or 2-pyridylsulfonyl), amino (e.g., amino, ethylamino, dimethylamino, butylamino, cyclopentylamino, 2-ethylhexylamino, dodecylamino, anilino, naphthylamino, 2-pyridylamino, piperidyl (also called piperidinyl), or 2,2,6,6-tetramethylpiperidinyl), a halogen atom (e.g., fluorine atom, chlorine atom, or bromine atom), a fluorinated hydrocarbon group (e.g., fluoromethyl, trifluoromethyl, pentafluoroethyl, or pentafluorophenyl), cyano, nitro, hydroxy, mercapto, silyl (e.g., trimethylsilyl, triisopropylsilyl, triphenylsilyl, or phenyldiethylsilyl), a phosphate group (e.g., dihexylphosphoryl), a phosphite group (e.g., diphenylphosphinyl), phosphono, or the like.
Part of any of these substituents may be further substituted with any of these substituents. Two or more of these substituents may also be linked together to form a ring.
[Chemical Formula 18]
The compound represented by formula (1a) is one type of the compound represented by formula (1) above, in which E103 and E106 are —N═.
[Chemical Formula 19]
Formula (2) is also one type of formula (1). In formula (2), Y21 represents an arylene group, a heteroarylene group, or a divalent linking group including a combination thereof. E201 to E216 and E221 to E238 each represent —C(R21)= or —N═, wherein R21 represents a hydrogen atom or a substituent, at least one of E221 to E229 and at least one of E230 to E238 represent —N═, and k21 and k22 each represent an integer of 0 to 4, provided that k21+k22 is an integer of 2 or more.
In formula (2), the arylene group represented by Y21 may be, for example, o-phenylene, p-phenylene, naphthalenediyl, anthracenediyl, naphthacenediyl, pyrenediyl, naphthylnaphthalenediyl, biphenyldiyl (e.g., [1,1′-biphenyl]-4,4′-diyl, 3,3′-biphenyldiyl, or 3,6-biphenyldiyl), terphenyldiyl, quaterphenyldiyl, quinquephenyldiyl, sexiphenyldiyl, septiphenyldiyl, octiphenyldiyl, noviphenyldiyl, deciphenyldiyl, or the like.
In formula (2), the heteroarylene group represented by Y21 may be, for example, a divalent group derived from at least one selected from the group consisting of a carbazole ring, a carboline ring, a diazacarbazole ring (also called a monoazacarboline ring, which is a ring structure derived from a carboline ring by replacing a carbon atom in the carboline ring with a nitrogen atom), a triazole ring, a pyrrole ring, a pyridine ring, a pyrazine ring, a quinoxaline ring, a thiophene ring, an oxadiazole ring, a dibenzofuran ring, a dibenzothiophene ring, and an indole ring.
Preferred modes of the arylene group, the heteroarylene group, or a divalent linking group including a combination thereof, represented by Y21, are preferably as follows. The heteroarylene group preferably includes a group derived from a condensed aromatic heterocyclic ring formed by condensation of three or more rings. The group derived from a condensed aromatic heterocyclic ring formed by condensation of three or more rings is preferably a group derived from a dibenzofuran ring or a dibenzothiophene ring.
In formula (2), R21 of —C(R21)= represented by each of E201 to E216 and E221 to E238 may be a substituent. In this case, examples of the substituent may be the same as those listed for R11 and R12 in formula (1).
In formula (2), six or more of E201 to E208 and six or more of E209 to E216 each preferably represent —C(R21)=.
In formula (2), at least one of E225 to E229 and at least one of E234 to E238 preferably represent —N═.
In formula (2), at least one of E225 to E229 and at least one of E234 to E238 preferably represent —N═.
In formula (2), E221 to E224 and E230 to E233 each preferably represent —C(R21)=.
In the compound represented by formula (2), E203 preferably represents —C(R21)=, R21 preferably represents a linking moiety, E211 also preferably represents —C(R21)=, and R21 preferably represents a linking moiety.
E225 and E234 also preferably represent —N═, and E221 to E224 and E230 to E233 each preferably represent —C(R21)=.
[Chemical Formula 20]
Formula (3) is also one type of formula (1). In formula (3), E301 to E312 each represent —C(R31)=, wherein R31 represents a hydrogen atom or a substituent. Y31 represents an arylene group, a heteroarylene group, or a divalent linking group including a combination thereof.
In formula (3), R31 of —C(R31)= represented by each of E301 to E312 may be a substituent. In this case, examples of the substituent may be the same as those listed above for R11 and R12 in formula (1).
Preferred modes of the arylene group, the heteroarylene group, or a divalent linking group including a combination thereof, represented by Y31 in formula (3), may be the same as those for Y21 in formula (2).
[Chemical Formula 21]
Formula (4) is also one type of formula (1). In formula (4), E401 to E414 each represent —C(R41)=, wherein R41 is a hydrogen atom or a substituent. Ar41 represents a substituted or unsubstituted aromatic hydrocarbon ring or aromatic heterocyclic ring, and k41 represents an integer of 3 or more.
In formula (4), R41 of —C(R41)= represented by each of E401 to E414 may be a substituent. In this case, examples of the substituent may be the same as those listed above for R11 and R12 in formula (1).
In formula (4), Ar41 may represent an aromatic hydrocarbon ring. In this case, the aromatic hydrocarbon ring may be a benzene ring, a biphenyl ring, a naphthalene ring, an azulene ring, an anthracene ring, a phenanthrene ring, a pyrene ring, a chrysene ring, a naphthacene ring, a triphenylene ring, an o-terphenyl ring, a m-terphenyl ring, a p-terphenyl ring, an acenaphthene ring, a coronene ring, a fluorene ring, a fluoranthrene ring, a naphthacene ring, a pentacene ring, a perylene ring, a pentaphene ring, a picene ring, a pyrene ring, a pyranthrene ring, an anthanthrene ring, or the like. These rings may be further substituted with a substituent, examples of which may be the same as those listed for R11 and R12 in formula (1).
In formula (4), Ar41 may represent an aromatic heterocyclic group. In this case, the aromatic heterocyclic group may be a furan ring, a thiophene ring, an oxazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, a benzimidazole ring, an oxadiazole ring, a triazole ring, an imidazole ring, a pyrazole ring, a triazole ring, an indole ring, a benzimidazole ring, a benzothiazole ring, a benzoxazole ring, a quinoxaline ring, a quinazoline ring, a phthalazine ring, a carbazole ring, an azacarbazole ring, or the like. The azacarbazole ring refers to a ring derived from a carbazole ring by replacing a carbon atom(s) in the benzene ring of the carbazole ring with at least one nitrogen atom. These rings may be further substituted with a substituent, examples of which include those listed for R11 and R12 in formula (1).
[Chemical Formula 22]
In formula (5), R51 represents a substituent, E501, E502, E511 to E515, and E521 to E525 each represent —C(R52)= or —N═, and E503 to E505 each represent —C(R52)=, wherein R52 represents a hydrogen atom (H) or a substituent. At least one of E501 and E502 is —N═(nitrogen atom), at least one of E511 to E515 is —N═(nitrogen atom), and at least one of E521 to E525 is —N═(nitrogen atom).
In formula (5), R51 and R52 may each represent a substituent. In this case, examples of the substituent may be the same as those listed for R11 and R12 in formula (1).
[Chemical Formula 23]
In formula (6), E601 to E612 each represent —C(R61)= or —N═, wherein R61 represent a hydrogen atom or a substituent. Ar61 represents a substituted or unsubstituted aromatic hydrocarbon ring or aromatic heterocyclic ring.
In formula (6), R61 of —C(R61)= represented by each of E601 to E612 may be a substituent. In this case, examples of the substituent may be the same as those listed for R11 and R12 in formula (1).
Examples of the substituted or unsubstituted aromatic hydrocarbon ring or aromatic heterocyclic ring represented by Ar61 in formula (6) may be the same as those for Ar41 in formula (4).
[Chemical Formula 24]
In formula (7), R71 to R73 each represent a hydrogen atom (H) or a substituent, and Ar71 represents an aromatic hydrocarbon ring group or an aromatic heterocyclic ring group.
In formula (7), R71 to R73 may each be a substituent. In this case, examples of the substituent may be the same as those listed above for R11 and R12 in formula (1).
Examples of the aromatic hydrocarbon ring or aromatic heterocyclic ring represented by Ar71 in formula (7) may be the same as those for Ar41 in formula (4).
[Chemical Formula 25]
Formula (8) is also one type of formula (7). In formula (8), R81 to R86 each represent a hydrogen atom (H) or a substituent. E801 to E803 each represent —C(R87)= or —N═, wherein R87 represents a hydrogen atom (H) or a substituent. Ar81 represents an aromatic hydrocarbon ring group or an aromatic heterocyclic ring group.
In formula (8), R81 to R87 may each be a substituent. In this case, examples of the substituent may be the same as those for R11 and R12 in formula (1).
The aromatic hydrocarbon ring or aromatic heterocyclic ring represented by Ar81 in formula (8) may be the same as that for Ar41 in formula (4).
[Chemical Formula 26]
The nitrogen-containing compound represented by formula (8a) is one type of the nitrogen-containing compound represented by formula (8), in which Ar81 is a carbazole derivative. In formula (8a), E804 to E811 each represent —C(R88)= or —N═, wherein R88 represents a hydrogen atom (H) or a substituent. At least one of E808 to E811 is —N═, and any of E804 to E807 and E808 to E811 may be linked together to form a new ring.
In formula (8a), R88 may be a substituent. In this case, examples of the substituent may be the same as those listed for R11 and R12 in formula (1).
[Compound 3]
Other compounds that may be used to form the nitrogen-containing layer 1a include compounds 1 to 166, which are shown below as examples, in addition to the compounds represented by formulae (1) to (8a). Such compounds are materials having electron transport properties or electron injection properties. Therefore, the transparent electrode 1 having the nitrogen-containing layer 1a formed with any of such compounds is suitable for an organic electroluminescent device, and the nitrogen-containing layer 1a can be used as an electron transport layer or an electron injection layer in such an organic electroluminescent device. It should be noted that compounds 1 to 166 include compounds having an effective lone pair content [n/M] in the specified range and such compounds may be used alone to form the nitrogen-containing layer 1a. Compounds 1 to 166 also include compounds corresponding to formulae (1) to (8a) shown above.
[Examples of Synthesis of Compounds]
Hereinafter, a specific example of synthesis of compound 5 will be shown as a non-limiting example of synthesis of a typical compound.
[Chemical Formula 62]
Step 1: (Synthesis of Intermediate 1)
Under a nitrogen atmosphere, 2,8-dibromodibenzofuran (1.0 mole), carbazole (2.0 moles), copper powder (3.0 moles), potassium carbonate (1.5 moles) were mixed in 300 ml of DMAc (dimethylacetamide) and stirred at 130° C. for 24 hours. After the resulting reaction liquid was cooled to room temperature, 1 L of toluene was added to the liquid. The mixture was washed three times with distilled water, and the solvent was removed from the washed product by distillation under a reduced pressure atmosphere. The residue was purified by silica gel flash chromatography (n-heptane:toluene=4:1 to 3:1) to give intermediate 1 with a yield of 85%.
Step 2: (Synthesis of Intermediate 2)
At room temperature, intermediate 1 (0.5 moles) was dissolved in 100 ml of DMF (dimethylformamide) under the atmosphere, and NBS (N-bromosuccinimide) (2.0 moles) was added and stirred at room temperature overnight. The resulting precipitate was separated by filtration and washed with methanol to give intermediate 2 with a yield of 92%.
Step 3: (Synthesis of Compound 5)
Under a nitrogen atmosphere, intermediate 2 (0.25 moles), 2-phenylpyridine (1.0 mole), a ruthenium complex [(η6-C6H6)RuCl2]2 (0.05 moles), triphenylphosphine (0.2 moles), and potassium carbonate (12 moles) were mixed in 3 L of NMP (N-methyl-2-pyrrolidone) and stirred at 140° C. overnight.
After the reaction liquid was cooled to room temperature, 5 L of dichloromethane was added, and the reaction liquid was filtered. The solvent was then removed from the filtrate by distillation under a reduced pressure atmosphere (800 Pa, 80° C.). The residue was purified by silica gel flash chromatography (CH2Cl2:Et3N=20:1 to 10:1).
Under a reduced pressure atmosphere, the solvent was removed from the purified product by distillation. The residue was then dissolved again in dichloromethane and washed three times with water. The washed product was dried over anhydrous magnesium sulfate. The solvent was removed from the dried product by distillation under a reduced pressure atmosphere, so that compound 5 was obtained with a yield of 68%.
[Method for Deposition of Nitrogen-Containing Layer 1a]
The nitrogen-containing layer 1a described above may be deposited on the substrate 11. In this case, the deposition method may be a method using a wet process such as application, ink-jetting, coating, or dipping, or a method using a dry process such as vapor deposition (such as resistive heating or electron beam deposition), sputtering, or CVD. In particular, vapor deposition is preferably used.
Particularly when a plurality of compounds are used to form the nitrogen-containing layer 1a, codeposition is preferably used in which the plurality of compounds are simultaneously supplied from a plurality of deposition sources. When the compound used is a polymer material, an application method is preferably used. In this case, a coating liquid including a solution of the compound in a solvent is used. The compound may be dissolved in any solvent. When a plurality of compounds are used to form the nitrogen-containing layer 1a, a solvent capable of dissolving the plurality of compounds may be used to form a coating liquid.
<High Surface Energy Material Layer A>
The high surface energy material layer A is a layer including a high surface energy material having a sublimation enthalpy higher than that of silver (Ag) used to form the electrode layer 1b. The high surface energy material layer A is provided between and in contact with the nitrogen-containing layer 1a and the electrode layer 1b. Examples of the material having a sublimation enthalpy higher than that of silver (Ag) (high surface energy material) include aluminum (Al), titanium (Ti), gold (Au), platinum (Pt), etc. The high surface energy material layer A may include at least one of these materials as a main component with an additional material. Such an additional material may be silver (Ag), magnesium (Mg), copper (Cu), indium (In), lithium (Li), or the like.
It is important that the high surface energy material layer A described above does not inhibit the optical transparency of the transparent electrode 1 and is thin enough not to inhibit the effect of nitrogen in the nitrogen-containing layer 1a on the electrode layer 1b. Therefore, the high surface energy material layer A may be 1 nm or less in thickness, and it does not need to be in the form of a continuous film and may be in the form of islands or shaped to have a plurality of pores. The high surface energy material layer A with such features and the electrode layer 1b form a substantial electrode layer part of the transparent electrode 1.
The high surface energy material layer A with such features may be formed by any deposition method. In particular, vapor deposition (specifically, electron beam deposition) or sputtering is preferably used.
<Electrode Layer 1b>
The electrode layer 1b includes silver as a main component. The electrode layer 1b, which may include silver or an alloy including silver as a main component, is so disposed that the high surface energy material layer A is sandwiched between it and the nitrogen-containing layer 1a. Therefore, the electrode layer 1b is provided adjacent to the high surface energy material layer A. When the high surface energy material layer A is not a continuous film but in the form of islands or a layer having pores, part of the electrode layer 1b is provided adjacent to the nitrogen-containing layer 1a.
The method for depositing the electrode layer 1b may be a method using a wet process such as application, ink-jetting, coating, or dipping, or a method using a dry process such as vapor deposition (such as resistive heating or electron beam deposition), sputtering, or CVD. In particular, vapor deposition is preferably used. The electrode layer 1b can be formed on the nitrogen-containing layer 1a with a very thin high-surface-energy material layer A interposed therebetween. Therefore, the electrode layer 1b can have sufficient conductivity even without undergoing high-temperature annealing after the deposition. If necessary, however, the electrode layer 1b may be subjected to high-temperature annealing or the like after the deposition.
The electrode layer 1b may include an alloy including silver (Ag) as a main component. As an example, the alloy may be a silver-magnesium alloy (Ag—Mg), a silver-copper alloy (Ag—Cu), a silver-palladium alloy (Ag—Pd), a silver-palladium-copper alloy (Ag—Pd—Cu), a silver-indium alloy (Ag—In), or the like.
If necessary, the electrode layer 1b described above may be a stack of two or more layers of silver or a silver-based alloy, which are independently formed.
The electrode layer 1b preferably has a thickness in the range of 4 to 12 nm. When the thickness is 12 nm or less, the component of light absorbed or reflected by the layer can be kept small, so that the light transmittance of the electrode layer 1b can be advantageously maintained. When the thickness is 4 nm or more, the conductivity of the layer can also be ensured.
As described above, the transparent electrode 1 has a multilayer structure with the high surface energy material layer A sandwiched between the nitrogen-containing layer 1a and the electrode layer 1b. The top of the electrode layer 1b of the transparent electrode 1 with such a multilayer structure may be covered with a protective film or provided with another conductive layer formed thereon. In this case, the protective film and the conductive layer preferably have optical transparency so as not to impair the optical transparency of the transparent electrode 1. An optional layer may also be provided on the lower side of the nitrogen-containing layer 1a, namely, between the nitrogen-containing layer 1a and the substrate 11.
Such an optional layer, which may be additionally provided for the transparent electrode 1, may be, for example, a high-refractive-index layer. In this structure, the refractive index of the electrode layer 1b including metal has an imaginary part, and such a term can cause a reduction in the light transmittance at a longer wavelength part. When the high-refractive-index layer is disposed in the vicinity of the electrode layer 1b, the light transmittance can be adjusted so that the reduction in light transmittance can be suppressed.
The high-refractive-index layer may include an optically-transparent material having a refractive index higher than that of the nitrogen-containing layer 3. When the high-refractive-index layer is formed on the upper side of the electrode layer 1b, it can also serve as a protective film for the electrode layer 1b.
Examples of the material that may be used to form the high-refractive-index layer described above include metal oxides, metal nitrides, metal sulfides, etc. Specifically, high-refractive-index materials commonly used for optical films may be used, such as zinc oxide (ZnO, n=1.9-2.0), titanium oxide (TiO2, n=2.3-2.4), zirconium oxide (ZrO, n=2.4), cadmium oxide (CdO, n=2.49), indium tin oxide (ITO, n=2.1-2.2), hafnium oxide (HfO2, n=1.9-2.1), tantalum pentoxide (Ta2O5, n=2.16), and niobium oxide (Nb2O5, n=2.2-2.4).
The high-refractive-index layer described above can be formed by a method appropriately selected from known film deposition methods including dry processes such as vacuum vapor deposition and sputtering and wet processes such as a method of applying an ink composition containing nano-sized metal oxide ink dispersed in a solvent.
<Advantageous Effects of Transparent Electrode 1>
The transparent electrode 1, configured as described above, includes the nitrogen-containing layer 1a including a nitrogen atom-containing compound; the electrode layer 1b including silver (Ag) as a main component; and the high surface energy material layer A that includes a material having a sublimation enthalpy higher than that of silver (Ag) and is placed between the nitrogen-containing layer 1a and the electrode layer 1b. In this structure, the electrode layer 1b composed mainly of silver undergoes interaction between silver (Ag) and the material in the high surface energy material layer A and interaction between silver (Ag) and nitrogen atoms in the nitrogen-containing layer 1a, so that the silver is reduced in diffusion length at the adjacent interface and thus inhibited from aggregating.
Therefore, a thin silver film can be formed in a monolayer growth mode (Frank van der Merwe (FM) mode) although in general, silver can easily form isolated islands due to nucleation growth (Volumer Weber (VW) mode). Thus, the electrode layer 1b can be obtained with a uniform thickness even when it has a small thickness.
The effect of inhibiting the aggregation of silver in the electrode layer 1b can be obtained using a very thin high-surface-energy material layer A. Therefore, the absorption of light by the high surface energy material layer A can be minimized, so that the optical transparency of the transparent electrode 1 can be prevented from decreasing. In addition, since the high surface energy material layer A can be very thin, nitrogen in the nitrogen-containing layer 1a can interact with silver in the electrode layer 1b through the high surface energy material layer A.
In particular, the effective lone pair content [n/M] is used as an index to the stability of the ability of silver in the electrode layer 1b to bond the nitrogen-containing layer 1a, and a compound with an effective lone pair content of 2.0×10−3 or more (2.0×10−3≦[n/M]) is used to form the nitrogen-containing layer 1a. This makes it possible to form the nitrogen-containing layer 1a capable of reliably producing the effect of “inhibiting the aggregation of silver”. As described in detail in Examples below, this has also been demonstrated from the fact that a very thin electrode layer 1b with a thickness of 6 nm formed on such a nitrogen-containing layer 1a has its sheet resistance reduced by almost two orders of magnitude.
Thus it is ensured that the electrode layer 1b in the transparent electrode 1 can be thin so that it will reliably have optical transparency, and can also have uniform thickness so that it will have reliable conductivity. Therefore, the optical electrode 1 including silver can have both higher conductivity and higher optical transparency.
The transparent electrode 1 having these features can be rare metal indium (In)-free and thus low cost. The transparent electrode 1 having these features can also be free of any chemically-unstable materials such as ZnO and thus have high long-term reliability.
<<2. Applications of Transparent Electrode>>
The transparent electrode 1 configured as described above can be used in a variety of electronic devices. Examples of electronic devices include organic electroluminescent devices, LEDs (light-emitting diodes), liquid crystal devices, solar cells, touch panels, etc. In these electronic devices, the transparent electrode 1 can be used as an electrode member required to have optical transparency.
Hereinafter, embodiments of organic electroluminescent devices each including the transparent electrode as an anode or a cathode will be described as an example of application.
<<3. Organic Electroluminescent Device>>
<Structure of Organic Electroluminescent Device EL-1>
The organic electroluminescent device EL-1 shown in
The overall layer structure of the organic electroluminescent device EL-1 is not restricted and may be a common layer structure. In this embodiment, the transparent electrode 1 is placed on the cathode side so that the electrode layer 1b mainly functions as a cathode, while the counter electrode 5-1 functions as an anode.
Typical device structures for the organic electroluminescent device EL-1 according to the present invention include, but are not limited to, the following structures.
(1) Anode/light-emitting layer/cathode
(2) Anode/light-emitting layer/electron transport layer/cathode
(3) Anode/hole transport layer/light-emitting layer/cathode
(4) Anode/hole transport layer/light-emitting layer/electron transport layer/cathode
(5) Anode/hole transport layer/light-emitting layer/electron transport layer/electron injection layer/cathode
(6) Anode/hole injection layer/hole transport layer/light-emitting layer/cathode
(7) Anode/hole injection layer/hole transport layer/(electron-blocking layer)/light-emitting layer/(hole-blocking layer)/electron transport layer/electron injection layer/cathode
Among them, structure (7) is preferably used although any other structure may be used.
As an example, this embodiment shows a layer structure including a hole injection layer 3a, a hole transport layer 3b, a light-emitting layer 3c, an electron transport layer 3d, and an electron injection layer 3e, stacked in this order on the counter electrode 5-1 as an anode, in which the light-emitting layer 3c essentially includes at least an organic material.
In the present invention, the light-emitting layer may have a monolayer or multilayer structure. When a plurality of light-emitting layers are provided, a non-light-emitting intermediate layer may be provided between the respective light emitting layers.
If necessary, a hole-blocking layer (also called a hole barrier layer) or an electron injection layer (also called a cathode buffer layer) may be provided between the light-emitting layer and the cathode, and an electron-blocking layer (also called an electron barrier layer) or a hole injection layer (also called an anode buffer layer) may be provided between the light-emitting layer and the anode.
In the present invention, the electron transport layer is a layer having the function of transporting electrons. In a broad sense, the electron transport layer also includes an electron injection layer or a hole-blocking layer. The electron transport layer may be also a multilayer structure.
In the present invention, the hole transport layer is a layer having the function of transporting holes. In abroad sense, the hole transport layer also includes a hole injection layer or an electron-blocking layer. The hole transport layer may also be a multilayer structure.
In the above typical device structure, the light-emitting functional layer 3, exclusive of the anode and the cathode, is also referred to as the “organic layer”. In the light-emitting functional layer 3, for example, the electron injection layer may include an inorganic material.
In the transparent electrode 1 provided to form the cathode, the nitrogen-containing layer 1a may also serve as an electron injection layer or as both an electron transport layer and an electron injection layer.
(Tandem Structure)
The organic electroluminescent device according to the present invention may be a tandem structure device in which a plurality of light-emitting units (light-emitting functional layers) each including a light-emitting functional layer as a light-emitting unit including at least one light-emitting layer are stacked between the anode and the cathode.
A typical example of the tandem structure device may have the following structure: [anode/first light-emitting unit/intermediate layer/second light-emitting unit/intermediate layer/third light-emitting unit/cathode]
In this structure, the first, second, and third light-emitting units may be the same or different. Alternatively, two of them may be the same and differ from the remaining one.
Two or more light-emitting units may be stacked directly on each other or stacked with an intermediate layer interposed therebetween. The intermediate layer is also generally called an intermediate electrode, an intermediate conductive layer, a charge generation layer, an electron extraction layer, a connection layer, or an intermediate insulting layer, which may include any known material as long as it forms a layer having the function of supplying electrons to the adjacent layer on the anode side and supplying holes to the adjacent layer on the cathode side.
Examples of materials that may be used to form the intermediate layer include, but are not limited to, ITO (indium tin oxide), IZO (indium zinc oxide), ZnO2, TiN, ZrN, HfN, TiOx, VOx, CuI, InN, GaN, CuAlO2, CuGaO2, SrCu2O2, LaB6, RuO2, Al, and other conductive inorganic compound layers, Au/Bi2O3 and other two-layer films, SnO2/Ag/SnO2, ZnO/Ag/ZnO, Bi2O3/Au/Bi2O3, TiO2/TiN/TiO2, TiO2/ZrN/TiO2, and other multilayer films, fullerenes such as C60, oligothiophene and other conductive organic materials, metallophthalocyanines, metal-free phthalocyanines, metalloporphyrins, metal-free porphyrins, and other conductive organic compounds.
Preferred examples of the structure of the light-emitting unit (light-emitting functional layer) include, but are not limited to, structures obtained by excluding the anode and the cathode from typical device structures (1) to (7) listed above. When the light-emitting unit (light-emitting functional layer) closest to the cathode has an electron injection layer or an electron transport layer, the nitrogen-containing layer 1a may also serve as any of these layers.
Examples of the tandem organic electroluminescent device include, but are not limited to, the device structures and components described in U.S. Pat. No. 6,337,492, U.S. Pat. No. 7,420,203, U.S. Pat. No. 7,473,923, U.S. Pat. No. 6,872,472, U.S. Pat. No. 6,107,734, U.S. Pat. No. 6,337,492, WO 2005/009087 A, JP 2006-228712 A, JP 2006-24791 A, JP 2006-49393 A, JP 2006-49394 A, JP 2006-49396 A, JP 2011-96679 A, JP 2005-340187 A, JP 4711424 B1, JP 3496681 B1, JP 3884564 B1, JP 4213169 B1, JP 2010-192719 A, JP 2009-076929 A, JP 2008-078414 A, JP 2007-059848 A, JP 2003-272860 A, JP 2003-045676 A, and WO 2005/094130 A.
Each principal layer of the above organic electroluminescent device EL-1 will be more specifically described in the following order: the substrate 13, the transparent electrode 1, the counter electrode 5-1, each layer of the light-emitting functional layer 3, methods for forming the light-emitting functional layer 3, an auxiliary electrode 15, and a transparent sealant 17. Subsequently, a method for manufacturing the organic electroluminescent device EL-1 will be described.
[Substrate 13]
The substrate 13 may include the same material as the substrate on which the transparent electrode 1 of the present invention described above is provided. However, the organic electroluminescent device EL-1 may be of a double-side emission type in which emitted light h is also extracted from the counter electrode 5-1 side, and in this case, a transparent substrate having optical transparency should be selected from the substrates listed above and used.
[Transparent Electrode 1 (Cathode Side)]
The transparent electrode 1 is the transparent electrode 1 of the present invention described above including the nitrogen-containing layer 1a, the high surface energy material layer A, and the electrode layer 1b, which are sequentially deposited from the light-emitting functional layer 3 side. In this structure, the electrode layer 1b and the high surface energy material layer A of the transparent electrode 1 serve as a substantial cathode. In the organic electroluminescent device EL-1 of this embodiment, the nitrogen-containing layer 1a including an organic material is disposed between the light-emitting functional layer 3 and the electrode layer 1b used as a substantial cathode. In this embodiment, therefore, the nitrogen-containing layer 1a of the transparent electrode 1 may also be counted as a layer forming part of the light-emitting functional layer 3.
In such a case, the nitrogen-containing layer 1a includes a compound having electron transport properties or electron injection properties, which is selected from the above compounds having an effective lone pair content [n/M] in the specified range. Alternatively, in such a case, the nitrogen-containing layer 1a may include a compound having electron transport or injection properties and a compound having a certain level of effective lone pair content [n/M], which are mixed in such a way that the nitrogen-containing layer 1a itself has an effective lone pair content [n/M] in the specified range. The nitrogen-containing layer 1a may also be a multilayer structure. In this case, an about 5 nm-thick interfacial layer of the nitrogen-containing layer 1a on the high surface energy material layer A side is preferably formed so as to have an effective lone pair content [n/M] in the specified range. On the other hand, the layer of the remaining part on the light-emitting functional layer 3 side is preferably formed as an electron transport or injection layer including a nitrogen-containing compound.
[Counter Electrode 5-1 (Anode)]
The counter electrode 5-1 is an electrode film provided to function as an anode for supplying holes to the light-emitting functional layer 3. The interfacial layer of the counter-electrode 5-1 in contact with the light-emitting functional layer 3 should include a material suitable as an anode. The material suitable as an anode is preferably an electrode material with a high work function (4 eV or more, preferably 4.5 eV or more), such as a metal, an alloy, an electrically-conductive compound, or any mixture thereof. Examples of such an electrode material include metals such as Au, CuI, indium tin oxide (ITO), SnO2, ZnO, and other transparent conductive materials. A material capable of forming an amorphous transparent conductive film, such as IDIXO (In2O2—ZnO) may also be used.
The anode may be formed by a process that includes forming a thin film of any of these electrode materials by vapor deposition, sputtering, or other methods and pattering the thin film into a desired shape by photolithography. Alternatively, if high patterning accuracy is not necessary (about 100 μm or more), the electrode material may be vapor-deposited or deposited by sputtering through a mask with the desired shape to form a certain pattern.
Alternatively, a material capable of being applied by coating techniques, such as a conductive organic compound may be used. In this case, wet deposition techniques such as printing and coating may also be used. When emitted light is extracted from the anode, the anode preferably has a transmittance of more than 10%, and the sheet resistance of the anode is preferably hundreds of Ω/square or less.
The thickness of the anode is generally selected in the range of 10 nm to 1 μm, preferably in the range of 10 nm to 200 nm, although it depends on the material.
The organic electroluminescent device EL-1 may be of a double-side emission type in which emitted light h is also extracted from the counter electrode 5-1 side. In this case, a conductive material with high optical transparency may be selected from the above conductive materials and used to form the counter electrode 5-1.
[Light-Emitting Layer]
In the present invention, the light-emitting layer is a layer providing a place where electrons and holes injected from the electrodes or adjacent layers are recombined to form excitons for light emission. The light-emitting part may be inside the light-emitting layer or at the interface between the light-emitting layer and the adjacent layer. In the present invention, the light-emitting layer may have any structure as long as the requirements according to the present invention are satisfied.
As a non-limiting example, the total thickness of the light-emitting layer is preferably adjusted to fall within the range of 2 nm to 5 μm, more preferably within the range of 2 nm to 500 nm, even more preferably within the range of 5 nm to 200 nm so that the film can be uniformly formed, unnecessary high-voltage can be prevented from being applied during light emission, and the stability of luminescent color at the driving current can be improved.
The thickness of the light-emitting layer is also preferably adjusted to fall within the range of 2 nm to 1 μm, more preferably within the range of 2 nm to 200 nm, even more preferably within the range of 3 nm to 150 nm.
The light-emitting layer preferably contains a light-emitting dopant (also referred to as a luminescent dopant compound, a dopant compound, or simply a dopant) and a host compound (also referred to as a matrix material, a light-emitting host compound, or simply a host).
(1) Light-Emitting Dopant
The light-emitting dopant according to the present invention will be described.
The light-emitting dopant is preferably a fluorescence-emitting dopant (also referred to as a fluorescent dopant or a fluorescent compound) or a phosphorescence-emitting dopant (also referred to as a phosphorescent dopant or a phosphorescent compound). In the present invention, at least one light-emitting layer preferably contains a phosphorescence-emitting dopant.
The concentration of the light-emitting dopant in the light-emitting layer may be freely determined based on the specific dopant to be used and the requirements for the device. The light-emitting layer may contain the dopant at a concentration uniform in the thicknesswise direction of the layer, or may have a certain dopant concentration distribution in the thicknesswise direction of the layer.
In the present invention, two or more different light-emitting dopants may be used together, and dopants with different structures may be used together, or a fluorescence-emitting dopant may be used in combination with a phosphorescence-emitting dopant. This makes it possible to obtain any desired luminescent color.
The color of the light emitted from the organic EL device of the present invention or the compound according to the present invention can be determined by measuring the light with a spectral radiance meter CS-2000 (manufactured by Konica Minolta Sensing Co., Ltd.) according to FIG. 4.16 on page 108 of Shin-Hen Shikisai Kagaku Handbook (New Handbook of Color Science) (edited by The Color Science Association of Japan, University of Tokyo Press, 1985) and determining the color from the measurement results based on the CIE chromaticity coordinates.
In the present invention, one or more light-emitting layers also preferably contain two or more light-emitting dopants with different luminescent colors to produce white emission.
Any combination of light-emitting dopants may be used to produce white emission. For example, a combination of blue and orange dopants, a combination of blue, green, and red dopants, or the like may be used.
The white color of the light from the organic EL device of the present invention is preferably such that the chromaticity of the light according to the CIE 1931 color system at 1,000 cd/m2 falls within the region x=0.39±0.09, y=0.38±0.08 when the 2° view angle front luminous is measured by the above method.
(1.1) Phosphorescence-Emitting Dopant
The phosphorescence-emitting dopant according to the present invention (hereinafter also referred to as the “phosphorescent dopant”) will be described.
The phosphorescent dopant according to the present invention is such a compound that emission from the excited triplet can be observed. Specifically, the phosphorescent dopant may be defined as a compound that emits phosphorescence at room temperature (25° C.) and has a phosphorescence quantum yield of 0.01 or more at 25° C. The phosphorescence quantum yield is preferably 0.1 or more.
The phosphorescence quantum yield can be measured by the method described on page 398 of The 4th Edition Jikken Kagaku Koza (Handbook of Experimental Chemistry) 7, Bunko (Spectroscopy) II (1992, Maruzen). The phosphorescence quantum yield in a solution can be measured using a variety of solvents. The phosphorescent dopant according to the present invention should have the specified phosphorescence quantum yield (0.01 or more) in any one of such solvents.
There are two principles for light emission from the phosphorescent dopant. One is an energy transfer type, according to which carriers are transported to a host compound and recombined on the host compound, so that the host compound is brought into an excited state, the energy of which is transferred to the phosphorescent dopant so that light is emitted from the phosphorescent dopant. The other is a carrier trap type, according to which carriers are recombined on the phosphorescent dopant serving as a carrier trap, so that light is emitted from the phosphorescent dopant. In both cases, it is required that the energy of the excited state of the phosphorescent dopant be lower than the energy of the excited state of the host compound.
The phosphorescent dopant (which may be used in combination with any other dopant in the present invention) may be appropriately selected from known dopants used in light-emitting layers for organic EL devices.
Examples of known phosphorescent dopants that may be used in the present invention include the compounds described in the literatures shown below.
Red phosphorescent dopants are described in the following literatures: Nature 395, 151 (1998), Appl. Phys. Lett. 78, 1622 (2001), Adv. Mater. 19, 739 (2007), Chern. Mater. 17, 3532 (2005), Adv. Mater. 17, 1059 (2005), WO 2009/100991 A, WO 2008/101842 A, WO 2003/040257 A, US 2006/835,469 A, US 2006/0,202,194 A, US 2007/0,087,321 A, and US 2005/0,244,673 A.
Green phosphorescent dopants are described in the following literatures: Inorg. Chern. 40, 1704 (2001), Chern. Mater. 16, 2480 (2004), Adv. Mater. 16, 2003 (2004), Angew. Chern. Int. Ed. 2006, 45, 7800, Appl. Phys. Lett. 86, 153505 (2005), Chern. Lett. 34, 592 (2005), Chern. Commun. 2906 (2005), Inorg. Chern. 42, 1248 (2003), WO 2009/050290 A, WO 2002/015645 A, WO 2009/000673 A, US 2002/0,034,656 A, U.S. Pat. No. 7,332,232, US 2009/0,108,737 A, US 2009/0,039,776 A, U.S. Pat. No. 6,921,915, U.S. Pat. No. 6,687,266, US 2007/0,190,359 A, US 2006/0,008,670 A, US 2009/0,165,846 A, US 2008/0,015,355 A, U.S. Pat. No. 7,250,226, U.S. Pat. No. 7,396,598, US 2006/0,263,635 A, US 2003/0,138,657 A, US 2003/0,152,802 A, and U.S. Pat. No. 7,090,928.
Blue phosphorescent dopants are described in the following literatures: Angew. Chern. Int. Ed. 47, 1 (2008), Chern. Mater. 18, 5119 (2006), Inorg. Chern. 46, 4308 (2007), Organometallics 23, 3745 (2004), Appl. Phys. Lett. 74, 1361 (1999), WO 2002/002714 A, WO 2006/009024 A, WO 2006/056418 A, WO 2005/019373 A, WO 2005/123873 A, WO 2007/004380 A, WO 2006/082742 A, US 2006/0,251,923 A, US 2005/0,260,441 A, U.S. Pat. No. 7,393,599, U.S. Pat. No. 7,534,505, U.S. Pat. No. 7,445,855, US 2007/0,190,359 A, US 2008/0,297,033 A, U.S. Pat. No. 7,338,722, US 2002/0,134,984 A, U.S. Pat. No. 7,279,704, US 2006/098,120 A, and US 2006/103,874.
Phosphorescent dopants with various colors (mainly blue) are described in the following literatures: WO 2005/076380 A, WO 2010/032663 A, WO 2008/140115 A, WO 2007/052431 A, WO 2011/134013 A, WO 2011/157339 A, WO 2010/086089 A, WO 2009/113646 A, WO 2012/020327 A, WO 2011/051404, WO 2011/004639 A, WO 2011/073149 A, US 2012/228,583 A, US 2012/212,126 A, JP 2012-069737 A, JP 2012-195554A, JP 2009-114086 A, JP 2003-81988 A, JP 2002-302671 A, and JP 2002-363552 A.
In particular, the phosphorescent dopant is preferably an organometallic complex having Ir as a central metal. The phosphorescent dopant is more preferably a complex having at least one coordination moiety from a metal-carbon bond, a metal-nitrogen bond, a metal-oxygen bond, and a metal-sulfur bond.
Examples of known phosphorescent dopants that may be used in the present invention include, but are not limited to, the following dopants (D1 to D81).
(1.2) Fluorescence-Emitting Dopant
The fluorescence-emitting dopant (hereinafter also referred to as the “fluorescent dopant”) according to the present invention will be described.
The fluorescent dopant according to the present invention may be any compound capable of emitting light from the excited singlet state so that light emission from the excited singlet state can be observed.
Examples of the fluorescent dopant according to the present invention include anthracene derivatives, pyrene derivatives, chrysene derivatives, fluoranthene derivatives, perylene derivatives, fluorene derivatives, arylacetylene derivative, styrylarylene derivative, styrylamine derivatives, arylamine derivatives, boron complexes, coumarin derivatives, pyran derivatives, cyanine derivatives, croconium derivatives, squarylium derivatives, oxobenzanthracene derivatives, fluorescein derivatives, rhodamine derivatives, pyrylium derivatives, perylene derivatives, polythiophene derivatives, or rare earth complex compounds.
In recent years, light-emitting dopants capable of producing delayed fluorescence have been developed. Such dopants may also be used.
Examples of light-emitting dopants capable of producing delayed fluorescence include, but are not limited to, compounds described in WO 2011/156793 A, JP 2011-213643 A, and JP 2010-93181 A.
(2) Host Compound
The host compound according to the present invention is a compound that plays a role in injecting and transporting mainly charges in the light-emitting layer. In the organic EL device, light is not substantially observed from the host compound itself.
The host compound is preferably a compound whose phosphorescence quantum yield is less than 0.1, more preferably less than 0.01 at room temperature (25° C.), with respect to phosphorescence emission. The host compound preferably makes up 20% or more of the weight of the compounds in the light-emitting layer.
In addition, the energy of the excited state of the host compound is preferably higher than the energy of the excited state of the light-emitting dopant present in the same layer.
A host compound may be used alone, or two or more host compounds may be used together. Using two or more host compounds, charge transfer can be controlled so that the organic EL device can have a high efficiency.
Any host compound conventionally used in organic EL devices may be used in the present invention. The host compound may be a low molecular weight compound, a polymer compound having a repeating unit(s), or a compound having a reactive group such as a vinyl group or an epoxy group.
Known host compounds are preferably such that they have the ability to transport holes or electrons, make it possible to prevent an increase in the emission wavelength, and also have a high glass transition temperature (Tg) so that stable operation of the organic EL device can be achieved during high-temperature driving or against the heat generated during the driving of the device. The Tg is preferably 90° C. or more, more preferably 120° C. or more.
The glass transition point (Tg) is the value determined by the method according to JIS-K-7121 using DSC (differential scanning colorimetry).
Examples of known host compounds that may be used for the organic EL device of the present invention include, but are not limited to, compounds described in the following literatures.
JP 2001-257076 A, JP 2002-308855 A, JP 2001-313179 A, JP 2002-319491 A, JP 2001-357977 A, JP 2002-334786 A, JP 2002-8860 A, JP 2002-334787 A, JP 2002-15871 A, JP 2002-334788 A, JP 2002-43056 A, JP 2002-334789 A, JP 2002-75645 A, JP 2002-338579 A, JP 2002-105445 A, JP 2002-343568 A, JP 2002-141173, JP 2002-352957 A, JP 2002-203683 A, JP 2002-363227 A, JP 2002-231453 A, JP 2003-3165 A, JP 2002-234888 A, JP 2003-27048A, JP 2002-255934 A, JP 2002-260861 A, JP 2002-280183 A, JP 2002-299060 A, JP 2002-302516 A, JP 2002-305083 A, JP 2002-305084 A, JP 2002-308837 A, US 2003/0,175,553 A, US 2006/0,280,965 A, US 2005/0,112,407 A, US 2009/0,017,330 A, US 2009/0,030,202 A, US 2005/0,238,919 A, WO 2001/039234 A, WO 2009/021126 A, WO 2008/056746 A, WO 2004/093207 A, WO 2005/089025 A, WO 2007/063796 A, WO 2007/063754 A, WO 2004/107822 A, WO 2005/030900 A, WO 2006/114966 A, WO 2009/086028 A, WO 2009/003898 A, WO 2012/023947 A, JP 2008-074939 A, JP 2007-254297 A, and EP 2034538.
[Electron Transport Layer]
In the present invention, the electron transport layer only needs to include a material having the function of transporting electrons and have the function of transmitting electrons to the light-emitting layer when the electrons are injected from the cathode.
In the present invention, the total thickness of the electron transport layer is generally, but not limited to, 2 nm to 5 μm, preferably 2 nm to 500 nm, even more preferably 5 nm to 200 nm.
It is known that when light produced in the light-emitting layer of an organic EL device is extracted from the electrode, interference can occur between light directly extracted from the light-emitting layer and light extracted after it is reflected by the counter electrode opposite to the light extraction electrode. When light is reflected by the cathode, the total thickness of the electron transport layer may be appropriately adjusted between several nm and several μm so that the interference effect can be efficiently employed.
On the other hand, the voltage tends to increase as the thickness of the electron transport layer increases. Therefore, particularly when thick, the electron transport layer should preferably have an electron mobility of 10−5 cm2/Vs or more.
The material used to form the electron transport layer (hereinafter referred to as the electron transport material) only needs to have either electron injection or transport properties, or hole-barrier properties, and any suitable material may be selected from conventionally known compounds and used as the electron transport material.
Examples of the electron transport material include nitrogen-containing aromatic heterocyclic derivatives (such as carbazole derivatives, azacarbazole derivatives (which are derived by replacing at least one carbon atom in the carbazole ring with a nitrogen atom), pyridine derivatives, pyrimidine derivatives, pyrazine derivatives, pyridazine derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, phenanthroline derivatives, azatriphenylene derivatives, oxazole derivatives, triazole derivatives, oxadiazole derivatives, thiadiazole derivatives, triazole derivatives, benzimidazole derivatives, benzoxazole derivatives, and benzothiazole derivatives), dibenzofuran derivatives, dibenzothiophene derivatives, silole derivatives, aromatic hydrocarbon ring derivatives (such as naphthalene derivatives, anthracene derivatives, and triphenylene), etc.
The electron transport material may also be a metal complex having a quinolinol or benzoquinolinol skeleton-containing ligand, such as tris(8-quinolinol)aluminum (Alq), tris(5,7-dichloro-8-quinolinol)aluminum, tris(5,7-dibromo-8-quinolinol)aluminum, tris(2-methyl-8-quinolinol)aluminum, tris(5-methyl-8-quinolinol)aluminum, or bis(8-quinolinol)zinc (Znq), or a metal complex derived from any of these metal complexes by replacing the central metal with In, Mg, Cu, Ca, Sn, Ga, or Pb.
Alternatively, metal-free- or metallo-phthalocyanine or a compound derived therefrom by substitution with an alkyl group, a sulfonic acid group, or the like at the end is also preferably used as the electron transport material. Distyrylpyrazine derivatives, listed as materials for the light-emitting layer, may also be used as electron transport materials. Similarly to the hole injection layer or the hole transport layer, inorganic semiconductors such as n-type Si and n-type SiC may also be used as electron transport materials.
In addition, polymers having any of these materials incorporated in the polymer chain, or polymer materials having any of these materials in the polymer main chain may also be used.
The electron transport layer according to the present invention may also be a highly n-type (electron-rich) electron transport layer formed by doping an electron transport layer with a dopant as a guest material. The dopant may be an n-type dopant such as a metal complex, a metal halide, or a metal compound. Examples of the electron transport layer with such a composition include those described in literatures such as JP 4-297076 A, JP 10-270172 A, JP 2000-196140 A, JP 2001-102175 A, and J. Appl. Phys., 95, 5773 (2004).
Preferred examples of known electron transport materials that may be used in the organic EL device of the present invention include, but are not limited to, compounds described in the following literatures.
U.S. Pat. No. 6,528,187, U.S. Pat. No. 7,230,107, US 2005/0,025,993 A, US 2004/0,036,077 A, US 2009/0,115,316 A, US 2009/0,101,870 A, US 2009/0,179,554 A, WO 2003/060956 A, WO 2008/132085 A, Appl. Phys. Lett. 75, 4 (1999), Appl. Phys. Lett. 79, 449 (2001), Appl. Phys. Lett. 81, 162 (2002), Appl. Phys. Lett. 81, 162 (2002), Appl. Phys. Lett. 79, 156 (2001), U.S. Pat. No. 7,964,293, US 2009/030,202 A, WO 2004/080975 A, WO 2004/063159 A, WO 2005/085387 A, WO 2006/067931 A, WO 2007/086552 A, WO 2008/114690 A, WO 2009/069442 A, WO 2009/066779 A, WO 2009/054253 A, WO 2011/086935 A, WO 2010/150593 A, WO 2010/047707 A, EP 2311826, JP 2010-251675 A, JP 2009-209133 A, JP 2009-124114 A, JP 2008-277810A, JP 2006-156445 A, JP 2005-340122 A, JP 2003-45662 A, JP 2003-31367 A, JP 2003-282270 A, and WO 2012/115034 A.
In the present invention, the electron transport material is more preferably a pyridine derivative, a pyrimidine derivative, a pyrazine derivative, a triazine derivative, a dibenzofuran derivative, a dibenzothiophene derivative, a carbazole derivative, an azacarbazole derivative, or a benzimidazole derivative.
The transport materials may be used alone or in combination of two or more.
[Hole-Blocking Layer]
In abroad sense, the hole-blocking layer is a layer having the function of an electron transport layer. Preferably, the hole-blocking layer includes a material having the function of transporting electrons and a lower ability to transport holes so that it can increase the probability of recombination of electrons and holes by transporting electrons and blocking holes.
If necessary, the composition of the electron transport layer described above may be used to form the hole-blocking layer according to the present invention.
In the organic EL device of the present invention, the hole-blocking layer is preferably provided adjacent to the cathode side of the light-emitting layer.
In the present invention, the hole-blocking layer preferably has a thickness in the range of 3 to 100 nm, more preferably in the range of 5 to 30 nm.
The material used to form the electron transport layer described above is preferably used to form the hole-blocking layer. The material used as the host compound described above is also preferably used to form the hole-blocking layer.
[Electron Injection Layer]
In the present invention, the electron injection layer (also referred to as the “cathode buffer layer”) is a layer provided between the cathode and the light-emitting layer so as to reduce the driving voltage or improve the emission luminance. Such a layer is described in detail in “Yuki EL Soshi to Sono Kogyoka-Saizensen” (Organic EL Devices and Forefront of Their Industrialization), published by NTS Inc., Nov. 30, 1998, Part 2, Chapter 2, “Denkyoku Zairyou” (Electrode Materials), pages 123-166.
In the present invention, the electron injection layer is optionally provided. As mentioned above, it may be disposed between the cathode and the light-emitting layer or between the cathode and the electron transport layer.
The electron injection layer is preferably a very thin film and preferably has a thickness in the range of 0.1 nm to 5 nm although it depends on the material. The electron injection layer may also be a nonuniform film in which the component material is intermittently deposited.
The electron injection layer is also described in detail in publications such as JP 6-325871A, JP 9-17574A, and JP 10-74586 A. Examples of materials preferably used to form the electron injection layer include metals such as strontium and aluminum, alkali metal compounds such as lithium fluoride, sodium fluoride, and potassium fluoride, alkaline earth metal compounds such as magnesium fluoride and calcium fluoride, metal oxides such as aluminum oxide, and metal complexes such as lithium 8-hydroxyquinolate (Liq). The electron transport material described above may also be used.
The materials for the electron injection layer may be used alone or in combination of two or more.
[Hole Transport Layer]
In the present invention, the hole transport layer only needs to include a material having the function of transporting holes so that it has the function of transmitting holes to the light-emitting layer when the holes are injected from the anode.
In the present invention, the total thickness of the hole transport layer is generally, but not limited to, 5 nm to 5 μm, preferably 2 nm to 500 nm, more preferably 5 nm to 200 nm.
The material used to form the hole transport layer (hereinafter referred to as the hole transport material) only needs to have either hole injection or transport properties, or electron-barrier properties, and any suitable material may be selected from conventionally known compounds and used as the hole transport material.
Examples of the hole transport material include porphyrin derivatives, phthalocyanine derivatives, oxazole derivatives, oxadiazole derivatives, triazole derivatives, imidazole derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, hydrazone derivatives, stilbene derivatives, polyarylalkane derivatives, triarylamine derivatives, carbazole derivatives, indolocarbazole derivatives, isoindole derivatives, acene derivatives such as anthracene and naphthalene derivatives, fluorene derivatives, fluorenone derivatives, polyvinyl carbazole, polymers or oligomers having aromatic amine incorporated in the main or side chain, polysilane, and conductive polymers or oligomers (such as PEDOT:PSS, aniline copolymers, polyaniline, and polythiophene).
Triarylamine derivatives include benzidines such as aNPD, starburst derivatives such as MTDATA, and compounds having a fluorene or anthracene moiety combined with the triarylamine core.
Hexaazatriphenylene derivatives such as those described in JP 2003-519432 W and JP 2006-135145 A may also be used as hole transport materials.
In addition, an impurity-doped, highly p-type, hole transport layer may also be used. Examples of such a layer include those described in JP 4-297076 A, JP 2000-196140 A, JP 2001-102175 A, and J. Appl. Phys., 95, 5773 (2004).
In addition, inorganic materials described in JP 11-251067 A and J. Huang et. al., Applied Physics Letters 80 (2002), p. 139 may also be used, such as what are called p-type hole transport materials, p-type Si, and p-type SiC. An orthometallized organometallic complex having Ir or Pt as a central metal, such as Ir(ppy)3, is also preferably used.
Among the above hole transport materials that may be used, triarylamine derivatives, carbazole derivatives, indolocarbazole derivatives, azatriphenylene derivatives, organometallic complexes, and polymers or oligomers having aromatic amine incorporated in the main or side chain are preferably used.
Preferred examples of known hole transport materials that may be used for the organic EL device of the present invention include, but are not limited to, the compounds described in the literatures shown above and compounds described in the following literatures.
For example, Appl. Phys. Lett. 69, 2160 (1996), J. Lumin. 72-74, 985 (1997), Appl. Phys. Lett. 78, 673 (2001), Appl. Phys. Lett. 90, 183503 (2007), Appl. Phys. Lett. 90, 183503 (2007), Appl. Phys. Lett. 51, 913 (1987), Synth. Met. 87, 171 (1997), Synth. Met. 91, 209 (1997), Synth. Met. 111, 421 (2000), SID Symposium Digest, 37, 923 (2006), J. Mater. Chern. 3, 319 (1993), Adv. Mater. 6, 677 (1994), Chern. Mater. 15, 3148 (2003), US 2003/0,162,053 A, US 2002/0,158,242 A, US 2006/0,240,279 A, US 2008/0,220,265 A, U.S. Pat. No. 5,061,569, WO 2007/002683 A, WO 2009/018009 A, EP 650955, US 2008/0,124,572 A, US 2007/0,278,938 A, US 2008/0,106,190 A, US 2008/0,018,221 A, WO 2012/115034 A, JP 2003-519432 W, JP 2006-135145 A, and U.S. Ser. No. 13/585,981.
The hole transport materials may be used alone or in combination of two or more.
[Electron-Blocking Layer]
In a broad sense, the electron-blocking layer is a layer having the function of a hole transport layer. Preferably, the electron-blocking layer includes a material having the function of transporting holes and a lower ability to transport electrons so that it can increase the probability of recombination of electrons and holes by transporting holes and blocking electrons.
If necessary, the composition of the hole transport layer described above may be used to form the electron-blocking layer according to the present invention.
In the organic EL device of the present invention, the electron-blocking layer is preferably provided adjacent to the anode side of the light-emitting layer.
In the present invention, the electron-blocking layer preferably has a thickness in the range of 3 to 100 nm, more preferably in the range of 5 to 30 nm.
The material used to form the hole transport layer described above is preferably used to form the electron-blocking layer. The material used as the host compound described above is also preferably used to form the electron-blocking layer.
[Hole Injection Layer]
In the present invention, the hole injection layer (also referred to as the “anode buffer layer”) is a layer provided between the anode and the light-emitting layer so as to reduce the driving voltage or improve the emission luminance. Such a layer is described in detail in “Yuki EL Soshi to Sono Kogyoka-Saizensen” (Organic EL Devices and Forefront of Their Industrialization), published by NTS Inc., Nov. 30, 1998, Part 2, Chapter 2, “Denkyoku Zairyou” (Electrode Materials), pages 123-166.
In the present invention, the hole injection layer is optionally provided and may be provided between the anode and the light-emitting layer or between the anode and the hole transport layer as mentioned above.
The hole injection layer is also described in detail in publications such as JP 9-45479 A, JP 9-260062 A, and JP 8-288069 A. Examples of the material used to form the hole injection layer include those for the hole transport layer shown above.
Particularly preferred are phthalocyanine derivatives such as copper phthalocyanine, hexaazatriphenylene derivatives such as those described in JP 2003-519432 W and JP 2006-135145 A, metal oxides such as vanadium oxide, amorphous carbon, conductive polymers such as polyaniline (Emeraldine) and polythiophene, orthometallized complexes such as tris(2-phenylpyridine)iridium complexes, and triarylamine derivatives.
The materials for the hole injection layer may be used alone or in combination of two or more.
[Additional Component]
Each layer of the light-emitting functional layer described above may also contain an additional component.
Examples of the additional component include halogen elements such as bromine, iodine, and chlorine, halides, alkali metals such as Pd, Ca, and Na, alkaline earth metals, and compounds, complexes, or salts of transition metals, etc.
The content of the additional component, which may be freely determined, is preferably 1,000 ppm or less, more preferably 500 ppm or less, even more preferably 50 ppm or less, based on the total weight (%) of the layer or layers containing the additional component.
It will be understood that such ranges will not apply for the purpose of improving the electron or hole transport properties or making advantageous the exciton energy transfer.
[Methods for Forming Light-Emitting Functional Layer]
Methods for forming each layer (hole injection layer, hole transport layer, light-emitting layer, hole-blocking layer, electron transport layer, electron injection layer, etc.) of the light-emitting functional layer will be described.
Each layer of the light-emitting functional layer may be formed using any of conventionally known methods such as vacuum vapor deposition and wet methods (also referred to as wet processes).
Wet methods include spin coating, casting, ink-jetting, printing, die coating, blade coating, roll coating, spray coating, curtain coating, LB techniques (Langmuir-Blodgett techniques), etc. In view of easy formation of uniform thin films and high productivity, methods highly suitable for roll-to-roll system are preferred, such as die coating, roll coating, ink-jetting, and spray coating.
The organic EL material according to the present invention may be dissolved or dispersed in a liquid medium. Examples of such a liquid medium that may be used include ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, aromatic hydrocarbons such as toluene, xylene, mesitylene, and cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin, and dodecane, and other organic solvents such as DMF and DMSO.
The dispersion method may be ultrasonic dispersion, high shear dispersion, medium dispersion, or other methods capable of disperse the material.
The deposition method used may also differ from layer to layer. When vapor deposition is used to form the film, the deposition conditions, although varying with the type of the compound used and other factors, are preferably selected as appropriate from the following common ranges: boat heating temperature 50° C. to 450° C., the degree of vacuum 10-6 Pa to 10-2 Pa, deposition rate 0.01 nm/sec to 50 nm/sec, substrate temperature −50° C. to 300° C., film thickness 0.1 nm to 5 μm, preferably 5 nm to 200 nm.
In the present invention, the formation of the organic layers is preferably performed in such a way that the layers from the hole injection layer to the cathode are continuously formed in a single vacuum pumping process. Alternatively, however, the product may be taken out in midstream and then subjected to a different deposition process. In such a case, the operation should preferably be performed under a dry inert gas atmosphere.
[Auxiliary Electrode 15]
The auxiliary electrode 15, which is provided to reduce the resistance of the transparent electrode 1, is provided in contact with the electrode layer 1b of the transparent electrode 1. The auxiliary electrode 15 is preferably made of a low-resistance metal such as gold, platinum, silver, copper, or aluminum. Since these metals have low optical transparency, the auxiliary electrode 15 should be patterned so that the extraction of emitted light h from a light extraction surface 17a will not be affected. Such a method for forming the auxiliary electrode 15 may be vapor deposition, sputtering, printing, ink-jetting, or aerosol jetting. In view of the numerical aperture for light extraction, the auxiliary electrode 15 preferably has a line width of 50 μm or less. In view of conductivity, the auxiliary electrode 15 preferably has a thickness of 1μ or more.
[Transparent Sealant 17]
The transparent sealant 17 is provided to cover the organic electroluminescent device EL-1. The transparent sealant 17 may be a sheet-shaped (film-shaped) sealant, which is bonded to the substrate 13 side with an adhesive 19, or a sealing film. The surface of the transparent sealant 17 forms a light extraction surface 17a from which the emitted light h of the organic electroluminescent device EL-1 is extracted. In such a case, the transparent sealant 17 is provided to cover at least the light-emitting functional layer 3 while the terminal parts of the transparent electrode 1 and the counter electrode 5-1 of the organic electroluminescent device EL-1 are exposed. The transparent sealant 17 may also be provided with electrodes, and the terminal parts of the transparent electrode 1 and the counter electrode 5-1 of the organic electroluminescent device EL-1 may be electrically connected to the electrodes, respectively.
The sheet-shaped (film-shaped) transparent sealant 17 may be, for example, a glass base material or a polymer base material. These base materials may be further formed into thin films. Specifically, the glass base material may be soda-lime glass, barium/strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, quartz, or the like. The polymer base material may be polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, polysulfone, or the like.
In particular, a thin film of the polymer base material is preferably used as the transparent sealant 17, so that the device can be obtained in the form of a thin film.
In addition, such a film of the polymer base material preferably has an oxygen permeability of 1×10−3 ml/(m2·24 h·atm) or less as measured by the method according to JIS K 7126 (1987) and a water-vapor permeability of 1×10−3 g/(m2·24 h) or less (25±0.5° C., relative humidity (90±2)% RH) as measured by the method according to JIS K 7129 (1992).
The base material described above may also be formed into a concave sheet and then used as the transparent sealant 17. In this case, the base material member may be subjected to sand blasting, chemical etching, or other processes so that a concave shape is formed.
An adhesive 19 is used to bond such a sheet-shaped transparent sealant 17 to the substrate 13 side. The adhesive 19 is used as a sealing agent for sealing the organic electroluminescent device EL-1 sandwiched between the transparent sealant 17 and the substrate 13. Specifically, the adhesive 19 may be a photo-curing or thermosetting adhesive having a reactive vinyl group, such as an acrylic acid oligomer or a methacrylic acid oligomer, or a moisture-curing adhesive such as 2-cyanoacrylic acid ester.
Alternatively, the adhesive 19 may be of a thermosetting and chemical setting type (two-part mixing type) such as an epoxy adhesive. A hot melt adhesive such as polyamide, polyester, or polyolefin may also be used. A cationic curing or ultraviolet curing epoxy resin adhesive may also be used.
Some organic materials used to form the organic electroluminescent device EL-1 may be degraded by heat treatment. Therefore, the adhesive 19 is preferably such that it can be bonded and cured at a temperature from room temperature to 80° C. A desiccant may also be dispersed in the adhesive 19.
A commercially available disperser may be used to apply the adhesive 19 to the part where the transparent sealant 17 and the substrate 13 are to be bonded, or the adhesive 19 may be applied by printing such as screen printing.
When a gap is formed between the sheet-shaped transparent sealant 17, the substrate 13, and the adhesive 19, inert gas such as nitrogen or argon or inert liquid such as fluorinated hydrocarbon or silicone oil is preferably injected into the gap in a gas or liquid phase. Alternatively, vacuum may also be used. In addition, a moisture absorbing compound may also be sealed inside.
Examples of the moisture absorbing compound include metal oxides (such as sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, and aluminum oxide), sulfates (such as sodium sulfate, potassium sulfate, magnesium sulfate, and cobalt sulfate), metal halides (such as calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, and magnesium iodide), and perchlorates (such as barium perchlorate and magnesium perchlorate). Anhydrous salts are preferably used for sulfates, metal halides, and perchlorates.
On the other hand, a sealing film may be used as the transparent sealant 17. In this case, the sealing film is provided on the substrate 13 in such a way that the light-emitting functional layer 3 of the organic electroluminescent device EL-1 is completely covered while the terminal parts of the transparent electrode 1 and the counter electrode 5-1 of the organic electroluminescent device EL-1 are exposed.
Such a sealing film should be made of a material having the function of preventing the entry of water, oxygen, and other substances capable of degrading the light-emitting functional layer 3 of the organic electroluminescent device EL-1. Such a material may be, for example, an inorganic material such as silicon oxide, silicon dioxide, or silicon nitride. To improve the brittleness of the sealing film, an organic material film may also be used together with the inorganic material film to form a multilayer structure.
These films may be formed by any method such as vacuum vapor deposition, sputtering, reactive sputtering, molecular beam epitaxy, ionized cluster beam technique, ion plating, plasma polymerization, atmospheric pressure plasma polymerization, plasma CVD, laser CVD, thermal CVD, or coating.
[Protective Film or Protective Sheet]
Although not shown, a protective film or a protective sheet may be provided in such a way that the organic electroluminescent device EL and the transparent sealant 17 are sandwiched between the substrate 13 and the protective film or sheet. The protective film or sheet is provided to mechanically protect the organic electroluminescent device EL. Particularly when the transparent sealant 17 is a sealing film, the protective film or sheet is preferably provided because the mechanical protection of the organic electroluminescent device EL by the sealing film is not sufficient.
The protective film or sheet may be a glass sheet, a polymer sheet, a polymer film thinner than the above, a metal sheet, a thin metal film thinner than the metal sheet, a polymer material film, or a metal material film. In particular, a polymer film is preferably used in view of lightweight and thickness reduction.
The organic electroluminescent device EL-1 of the present invention preferably has an emitted light h extraction efficiency of 1% or more, more preferably 5% or more at room temperature. In this regard, the light extraction efficiency (%)=(the number of photons extracted from the organic electroluminescent device)/(the number of electrons allowed to flow through the organic EL device)×100. A hue improvement filter such as a color filter or a color conversion filter with a fluorescent material for converting the color of the light emitted from the organic EL device to a plurality of colors may also be used and disposed on the light extraction side.
[Method for Manufacturing Organic Electroluminescent Device]
Hereinafter, a method for manufacturing the organic electroluminescent device EL-1 shown in
First, the counter electrode 5-1 for serving as an anode is formed on the substrate 13 by a suitable method as described above, and then the light-emitting functional layer 3 is formed thereon by a suitable method as described above.
The nitrogen-containing layer 1a is then formed with a thickness of 1 μm or less, preferably 10 nm to 100 nm. The high surface energy material layer A is then formed as a very thin film preferably with a thickness of 1 nm or less using aluminum. Subsequently, the electrode layer 1b of silver (or an alloy composed mainly of silver) is formed with a thickness of 4 nm to 12 nm, so that the transparent electrode 1 on the cathode side is formed. The nitrogen-containing layer 1a, the high surface energy material layer A, and the electrode layer 1b can be formed by spin coating, casting, ink-jetting, vapor deposition, sputtering, printing, or the like. Vapor deposition is particularly preferred because it can easily form a uniform film and is less likely to form pinholes.
Specifically, the electrode layer 1b is formed and patterned to have a terminal part extending from the top of the light-emitting functional layer 3 to the edge of the substrate 13, while it is insulated from the counter electrode 5-1 with the light-emitting functional layer 3. The nitrogen-containing layer 1a and the high surface energy material layer A may also be patterned in the same shape as the electrode layer 1b. If necessary, the auxiliary electrode 15 may be patterned before or after the formation of the electrode layer 1b or after the formation of the high surface energy material layer A. In this way, the organic electroluminescent device EL-1 is obtained. Subsequently, the transparent sealant 17 is provided to cover at least the light-emitting functional layer 3 while the terminal parts of the transparent electrode 1 and the counter electrode 5-1 of the organic electroluminescent device EL-1 are exposed. In this process, the adhesive 19 is used to bond the transparent sealant 17 to the substrate 13 side so that the organic electroluminescent device EL-1 is sealed between the transparent sealant 17 and the substrate 13.
Thus, the desired organic electroluminescent device EL-1 is obtained on the substrate 13. When the organic electroluminescent device EL-1 is manufactured in this way, it is preferable to continuously form the components from the light-emitting functional layer 3 to the counter electrode 5-1 in a single vacuum pumping process. Alternatively, however, the substrate 13 may be taken out of the vacuum atmosphere in midstream and then subjected to a different deposition process. In such a case, it is necessary to adopt special measures such as operation under a dry inert gas atmosphere.
A DC voltage of about 2 V to about 40 V may be applied to the organic electroluminescent device EL-1 obtained as described above, in which the counter electrode 5-1 is a plus pole (anode) and the electrode layer 1b is a minus pole (cathode), so that light emission can be observed. Alternatively, an AC voltage may be applied. The AC voltage applied may have any waveform.
<Advantageous Effects of Organic Electroluminescent Device EL-1>
The organic electroluminescent device EL-1 described above includes the transparent electrode 1 of the present invention as a cathode, which has both conductivity and optical transparency, the light-emitting functional layer 3 provided on the nitrogen-containing layer 1a side of the transparent electrode 1, and the counter electrode 5-1 as an anode, which are provided in this order. In this structure, a sufficient voltage can be applied across the transparent electrode 1 and the counter electrode 5-1, so that the organic electroluminescent device EL-1 can emit light with high luminance, and the efficiency of extraction of emitted light h from the transparent electrode 1 side can be improved, so that high luminance can be achieved. In addition, the driving voltage for a certain level of luminance can also be reduced, so that the emission lifetime can be extended. The organic electroluminescent device EL-1 can also have higher rectification ratio, lower short-circuit probability, and higher reliability because the transparent electrode 1 used can have uniform thickness and thus high smoothness.
<<4. Second Example of Organic Electroluminescent Device (Bottom Emission Type)>>
<Structure of Organic Electroluminescent Device>
The organic electroluminescent device EL-2 shown in
In such a case, the overall layer structure of the organic electroluminescent device EL-2 is not restricted and may be any common layer structure as in the first example. In the case of the second example, an illustrative structure includes a hole injection layer 3a, a hole transport layer 3b, a light-emitting layer 3c, an electron transport layer 3d, and an electron injection layer 3e, which are stacked in the this order on the top of the transparent electrode 1 for serving as an anode, and further includes the counter electrode 5-2 for serving as a cathode provided thereon. In this structure, only the part where the light-emitting functional layer 3 is sandwiched between the transparent electrode 1 and the counter electrode 5-2 serves as a light-emitting region in the organic electroluminescent device EL-2 similarly to the first example.
In the organic electroluminescent device EL-2 of this embodiment, the light-emitting functional layer 3 is provided directly on the electrode layer 1b, which substantially functions as an anode, in the transparent electrode 1 including the nitrogen-containing layer 1a, the high surface energy material layer A, and the electrode layer 1b stacked in this order on the transparent substrate 13′. Therefore, it is preferable that the nitrogen-containing layer 1a should include a compound with an effective lone pair content [n/M] in the specified range and the effective lone pair content [n/M] of the nitrogen-containing layer 1a itself should be in the specified range. Therefore, the nitrogen-containing layer 1a does not need to include a material having hole transport properties or hole injection properties. The nitrogen-containing layer 1a may also be a multilayer structure. In this case, an about 5-nm-thick interfacial layer of the nitrogen-containing layer 1a on the high surface energy material layer A side is preferably formed to have an effective lone pair content [n/M] in the specified range.
In order to reduce the resistance of the transparent electrode 1, the layer structure shown above may also include an auxiliary electrode 15 in contact with the electrode layer 1b of the transparent electrode 1 as in the first example.
In addition, the counter electrode 5-2 provided on the upper side of the light-emitting functional layer 3 is an electrode film for serving as a cathode, and its interfacial layer on the side in contact with the light-emitting functional layer 3 includes a material suitable as a cathode. The material suitable as a cathode may be an electrode material with a low work function (4 eV or less) such as a metal (referred to as an electron injecting metal), an alloy, an electrically-conductive compound, or any mixture thereof. Examples of such an electrode material include sodium, a sodium-potassium alloy, magnesium, lithium, a magnesium-copper mixture, a magnesium-silver mixture, a magnesium-aluminum mixture, a magnesium-indium mixture, an aluminum-aluminum oxide (Al2O3) mixture, indium, a lithium-aluminum mixture, aluminum, and rare earth metals. Among them, in view of electron injection properties and durability against oxidation, preferred examples are a mixture of an electron injecting metal and a second metal that has a work function higher than that of the electron injecting metal and is more stable, such as a magnesium-silver mixture, a magnesium-aluminum mixture, a magnesium-indium mixture, an aluminum-aluminum oxide (Al2O3) mixture, or a lithium-aluminum mixture, and aluminum.
The cathode can be produced by forming a thin film of any of these electrode materials by a method such as vapor deposition or sputtering. The sheet resistance of the cathode is preferably not more than several hundred Ω/square, and the cathode generally has a thickness selected in the range of 10 nm to 5 μm, preferably in the range of 50 nm to 200 nm.
In this case, a sealant 17′ used to seal the bottom emission organic electroluminescent device EL-2 does not need to have optical transparency. The sealant 17′ may be made of the same material as the transparent sealant used in the first example or a metal material. The metal material may be at least one metal selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum, or an alloy thereof. Any of these metal materials can be formed into a thin film when used as the sealant 17′, so that the total thickness of a light-emitting panel having the organic electroluminescent device can be reduced.
When emitted light h is also extracted from the counter electrode 5-2 side in the organic electroluminescent device EL-2, the counter electrode 5-2 should include a highly light-transmitting conductive material, which is selected from the conductive materials listed above. In this case, a transparent sealant having optical transparency is used as the sealant 17′.
<Advantageous Effects of Organic Electroluminescent Device EL-2>
The organic electroluminescent device EL-2 described above includes the transparent electrode 1 of the present invention having both conductivity and optical transparency as an anode, and includes the light-emitting functional layer 3 and the counter electrode 5-2 for serving as a cathode provided on the upper side thereof. Therefore, similarly to the first example, a sufficient voltage can be applied across the transparent electrode 1 and the counter electrode 5-2, so that the organic electroluminescent device EL-2 can emit light with high luminance, and the efficiency of extraction of emitted light h from the transparent electrode 1 side can be improved, so that high luminance can be achieved. In addition, the driving voltage for a certain level of luminance can also be reduced, so that the emission lifetime can be extended. Like the first example, the organic electroluminescent device EL-2 can also have higher rectification ratio, lower short-circuit probability, and higher reliability because the transparent electrode 1 used can have uniform thickness and thus high smoothness.
<<5. Third Example of Organic Electroluminescent Device (Double-Sided Emission Type)>>
<Structure of Organic Electroluminescent Device>
The organic electroluminescent device EL-3 shown in
In such a case, the overall layer structure of the organic electroluminescent device EL-3 is not restricted and may be any common layer structure as in the first example. In the case of the third example, an illustrative structure includes a hole injection layer 3a, a hole transport layer 3b, a light-emitting layer 3c, and an electron transport layer 3d, which are provided in the this order on the top of the transparent electrode 1 for serving as an anode, and further includes the transparent electrode 1 for serving as a cathode provided thereon. In the illustrated example, the electron transport layer 3d is provided to also serve as an electron injection layer and as the nitrogen-containing layer 1a of the transparent electrode 1 for serving as a cathode.
As described for the first example, the light-emitting functional layer 3 may have any of various structures as needed, and therefore, may include a hole-blocking layer or an electron-blocking layer, which is not shown in the drawing. In the structure shown above, only the part between the two transparent electrodes 1 serves as a light-emitting region in the organic electroluminescent device EL-3 similarly to the first example.
Also in the organic electroluminescent device EL-3 of this embodiment, the transparent electrode 1 provided on the transparent substrate 13′ side includes the nitrogen-containing layer 1a, the high surface energy material layer A, and the electrode layer 1b provided in order from the transparent substrate 13′ side, and the light-emitting functional layer 3 is provided directly on the electrode layer 1b, which substantially functions as an anode. Therefore, it is preferable that the nitrogen-containing layer 1a on the transparent substrate 13′ side should include a compound with an effective lone pair content [n/M] in the specified range and the effective lone pair content [n/M] of the nitrogen-containing layer 1a itself should be in the specified range. Therefore, the nitrogen-containing layer 1a does not need to include a material having hole transport properties or hole injection properties. The nitrogen-containing layer 1a may also be a multilayer structure. In this case, an about 5-nm-thick interfacial layer of the nitrogen-containing layer 1a on the high surface energy material layer A side is preferably formed to have an effective lone pair content [n/M] in the specified range.
On the other hand, the transparent electrode 1 provided on the light-emitting functional layer 3 includes the nitrogen-containing layer 1a, the high surface energy material layer A, and the electrode layer 1b, provided in order from the light-emitting functional layer 3 side, and the nitrogen-containing layer 1a is placed between the light-emitting functional layer 3 and the electrode layer 1b for substantially serving as a cathode and the high surface energy material layer A. Therefore, the nitrogen-containing layer 1a on the light-emitting functional layer 3 forms part of the light-emitting functional layer 3. In this case, the nitrogen-containing layer 1a includes a compound further having electron transport or injection properties, which is selected from the compounds having an effective lone pair content [n/M] in the specified range. Alternatively, in this case, the nitrogen-containing layer 1a may include a mixture of a compound having electron transport or injection properties and a compound having a certain level of effective lone pair content [n/M] so that the nitrogen-containing layer 1a itself has an effective lone pair content [n/M] in the specified range. The nitrogen-containing layer 1a may also be a multilayer structure. In this case, an about 5-nm-thick interfacial layer of the nitrogen-containing layer 1a on the high surface energy material layer A side is preferably formed to have an effective lone pair content [n/M] in the specified range. On the other hand, the remaining layer of the nitrogen-containing layer 1a on the light-emitting functional layer 3 side is preferably formed as an electron transport layer or an electron injection layer including a nitrogen-containing compound.
In the layer structure described above, auxiliary electrodes 15 for reducing the resistance of the transparent electrodes 1 may also be provided in contact with the electrode layers 1b of the two transparent electrodes 1 as in the first example.
The organic electroluminescent device EL-3, which is of a double-sided emission type, is sealed with a transparent sealant 17 having optical transparency.
<Advantageous Effects of Organic Electroluminescent Device EL-3>
The organic electroluminescent device EL-3 described above includes the transparent electrodes 1 of the present invention having both conductivity and optical transparency as an anode and a cathode, and includes the light-emitting functional layer 3 placed between the electrodes. Therefore, similarly to the first example, a sufficient voltage can be applied across the two transparent electrodes 1, so that the organic electroluminescent device EL-3 can emit light with high luminance, and the efficiency of extraction of emitted light h from the two transparent electrode 1 sides can be improved, so that high luminance can be achieved. In addition, the driving voltage for a certain level of luminance can also be reduced, so that the emission lifetime can be extended. Like the first example, the organic electroluminescent device EL-3 can also have higher rectification ratio, lower short-circuit probability, and higher reliability because the transparent electrodes 1 used can have uniform thickness and thus high smoothness.
<<6. Fourth Example of Organic Electroluminescent Device (Inverted Structure)>>
<Structure of Organic Electroluminescent Device>
The organic electroluminescent device EL-4 shown in
In such a case, the overall layer structure of the organic electroluminescent device EL-4 is not restricted and may be any common layer structure as in the first example. In the case of the fourth example, an illustrative structure includes an electron injection layer 3e, an electron transport layer 3d, a light-emitting layer 3c, a hole transport layer 3b, and a hole injection layer 3a, which are provided in this order on the upper side of the transparent electrode 1 for serving as a cathode, and includes the counter electrode 5-4 for serving as an anode provided thereon.
As described for the first example, the light-emitting functional layer 3 may have any of various structures as needed, and therefore, may include a hole-blocking layer or an electron-blocking layer, which is not shown in the drawing. In the structure shown above, only the part between the transparent electrode 1 and the counter electrode 5-4 serves as a light-emitting region in the organic electroluminescent device EL-4 similarly to the first example.
In the organic electroluminescent device EL-4 of this embodiment, the light-emitting functional layer 3 is provided directly on the electrode layer 1b, which substantially functions as an anode, in the transparent electrode 1 including the nitrogen-containing layer 1a, the high surface energy material layer A, and the electrode layer 1b stacked in this order on the transparent substrate 13′. Therefore, it is preferable that the nitrogen-containing layer 1a should include a compound with an effective lone pair content [n/M] in the specified range and the effective lone pair content [n/M] of the nitrogen-containing layer 1a itself should be in the specified range. Therefore, the nitrogen-containing layer 1a does not need to include a material having electron transport properties or electron injection properties. The nitrogen-containing layer 1a may also be a multilayer structure. In this case, an about 5-nm-thick interfacial layer of the nitrogen-containing layer 1a on the high surface energy material layer A side is preferably formed to have an effective lone pair content [n/M] in the specified range.
In the layer structure described above, an auxiliary electrode 15 for reducing the resistance of the transparent electrode 1 may also be provided in contact with the electrode layer 1b of the transparent electrode 1 as in the first example.
The counter electrode 5-4 provided as an anode on the upper side of the light-emitting functional layer 3 may be made of the same material as the anode described in the first example.
As a modification of this embodiment, the transparent electrode 1 may also be used as the anode on the light-emitting functional layer 3. In this case, the high surface energy material layer A and the electrode layer 1b, provided on the light-emitting functional layer 3 with the nitrogen-containing layer 1a interposed therebetween, serve as a substantial anode. The nitrogen-containing layer 1a provided on the light-emitting functional layer 3 also forms part of the light-emitting functional layer 3. In this case, the nitrogen-containing layer 1a preferably includes a compound further having hole transport or injection properties, which is selected from the compounds having an effective lone pair content [n/M] in the specified range. Alternatively, in this case, the nitrogen-containing layer 1a may include a mixture of a compound having hole transport or injection properties and a compound having a certain level of effective lone pair content [n/M] so that the nitrogen-containing layer 1a itself has an effective lone pair content [n/M] in the specified range. The nitrogen-containing layer 1a may also be a multilayer structure. In this case, an about 5-nm-thick interfacial layer of the nitrogen-containing layer 1a on the high surface energy material layer A side is preferably formed to have an effective lone pair content [n/M] in the specified range. On the other hand, the remaining layer of the nitrogen-containing layer 1a on the light-emitting functional layer 3 side is preferably formed as a hole transport layer or a hole injection layer including a nitrogen-containing compound.
<Advantageous Effects of Organic Electroluminescent Device EL-4>
The organic electroluminescent device EL-4 described above includes the transparent electrodes 1 of the present invention having both conductivity and optical transparency as a cathode, and includes the light-emitting functional layer 3 and the counter electrode 5-4 as an anode, provided in this order on the cathode. Therefore, similarly to the first example, a sufficient voltage can be applied across the transparent electrode 1 and the counter electrode 5-4, so that the organic electroluminescent device EL-4 can emit light with high luminance, and the efficiency of extraction of emitted light h from the transparent electrode 1 side can be improved, so that high luminance can be achieved. In addition, the driving voltage for a certain level of luminance can also be reduced, so that the emission lifetime can be extended. Like the first example, the organic electroluminescent device EL-4 can also have higher rectification ratio, lower short-circuit probability, and higher reliability because the transparent electrodes 1 used can have uniform thickness and thus high smoothness.
<<7. Applications of Organic Electroluminescent Device>>
The organic electroluminescent devices having the structures described above respectively are surface emitting devices and therefore can be used as a variety of light-emitting sources. Examples include illumination devices such as domestic lightings and vehicle interior lightings, backlights for watches and liquid crystal devices, lightings for sign advertisements, light sources for signals, light sources for optical recording media, light sources for electro-photographic copiers, light sources for optical communication processors, light sources for optical sensors, etc. However, these are non-limiting, and the devices can be effectively used in other applications, specifically, as backlights or illumination sources for use in combination with color filters for liquid crystal displays.
The organic electroluminescent device of the present invention may also be used as a certain type of lamp for illumination or an exposure light source. The organic electroluminescent device of the present invention may also be used for projection devices of an image projection type or displays on which viewers directly see still or moving images. In this case, a larger light-emitting surface may be formed by a technique what is called tiling, in which light-emitting panels each having the organic electroluminescent device are two-dimensionally joined together for a recent larger illumination device or display.
When the device is used in a display for reproducing moving images, the driving method may be of simple matrix (passive matrix) type or active matrix type. A color or full-color display can also be produced using two or more types of organic electroluminescent devices according to the present invention that emit light in different colors.
In the following, an illumination device will be described as an example of use, and then another illumination device having a light-emitting surface increased by tiling will be described.
<<8. Illumination Device 1>>
An illumination device according to the present invention has the organic electroluminescent device described above.
The organic electroluminescent device for use in the illumination device according to the present invention may be designed to have a resonator structure incorporated in each structure described above. Examples of the purpose of the organic electroluminescent device having the resonator structure include, but are not limited to, light sources for optical recording media, light sources for electro-photographic copiers, light sources for optical communication processors, and light sources for optical sensors. The device may also be designed to perform laser oscillation for use in the above applications.
The materials used to form the organic electroluminescent device of the present invention can be used to form an organic electroluminescent device capable of emitting substantially white light (also referred to as a white organic electroluminescent device). For example, light in multiple colors may be emitted simultaneously using multiple luminescent materials and mixed to produce white light emission. The combination of multiple colors may include three maximum emission wavelengths for three primary colors, red, green, and blue, or include two maximum emission wavelengths in complementary color relationship, such as blue and yellow or blue green and orange.
The combination of luminescent materials to produce multiple luminescent colors may be either a combination of two or more materials capable of emitting different types of phosphorescence or fluorescence or a combination of a luminescent material capable of emitting fluorescence or phosphorescence and a dye material capable of emitting light using, as exciting light, the light from the luminescent material. A white organic electroluminescent device may also use a mixture of two or more light-emitting dopants.
Such a white organic electroluminescent device emits white light by itself in contrast to a structure including organic electroluminescent devices for different emission colors separately arranged parallel in an array to produce white light emission. When such a device is produced, therefore, no mask is required in forming almost all the layers of the device, and for example, an electrode film can be formed over a surface by vapor deposition, casting, spin-coating, ink-jetting, or printing, which improves the productivity.
The light-emitting layer of such a white organic electroluminescent device may be formed using any luminescent materials. For example, for a backlight in a liquid crystal display, metal complexes according to the present invention or any suitable materials selected from known luminescent materials may be so combined that they can be adapted to the wavelength range corresponding to the CF (color filter) characteristics and can produce white color.
Using the white organic electroluminescent device described above, an illumination device capable of emitting substantially white light can be obtained.
<<9. Illumination Device 2>>
A plurality of organic electroluminescent devices according to the present invention may be used to form an illumination device having a large light-emitting surface. In this case, a plurality of light-emitting panels each having the organic electroluminescent device provided on a transparent substrate may be arranged (or tiled) on a support substrate to form a larger light-emitting surface. The support substrate may also serve as a sealant, and the light-emitting panels may be tiled in such a way that the organic electroluminescent devices are sandwiched between the support substrate and the transparent substrates of the light emitting panels. An adhesive may be applied between the support substrate and the transparent substrates in order to seal the organic electroluminescent devices. The terminals of the transparent electrodes and the counter electrodes should be exposed at the periphery of the light-emitting panels.
In the illumination device with such a structure, the central part of each light-emitting panel forms a light-emitting region, and a non-light-emitting region is formed between the light-emitting panels. Therefore, a light extraction member for increasing the amount of light extracted from the non-light-emitting region may be provided on the non-light-emitting region of the light extraction surface. A light condensing sheet or a light diffusion sheet may be used as the light extraction member.
According to the composition shown in Table 2 below, each of transparent electrode samples 101 to 132 was prepared with a conductive region area of 5 cm×5 cm. In this example, appropriate compounds were selected from compounds Nos. 1 to 45 shown in table 1 above and used.
<Procedure for Preparing Transparent Electrode Samples 101 and 102>
Each electrode layer of silver (Ag) with the thickness shown in Table 2 was formed on a glass substrate as described below.
First, a transparent alkali-free glass substrate was fixed on a substrate holder for a commercially available vacuum deposition system, and the holder was then placed in the vacuum chamber of the vacuum deposition system. Silver (Ag) was added to a resistance heating tungsten boat, which was placed in the vacuum chamber. After the pressure in the vacuum chamber was reduced to 4×10−4 Pa, the resistance heating boat was heated by passing a current through it, and an electrode of silver was formed with each thickness at a deposition rate of 0.1 nm/sec to 0.2 nm/sec. In sample 101, an electrode layer with a thickness of 6 nm was formed. In sample 102, an electrode layer with a thickness of 15 nm was formed.
<Procedure for Preparing Transparent Electrode Samples 103 to 111>
Each transparent electrode of a two-layer structure including a nitrogen-containing layer of the material shown in Table 2 and an electrode layer of silver was formed on a glass substrate as described below. In sample 103, a nitrogen-free underlying layer was formed instead of the nitrogen-containing layer.
First, a transparent alkali-free glass substrate was fixed on a substrate holder for a commercially available vacuum deposition system. Each compound shown in Table 2 below for the preparation of each transparent electrode was added to a resistance heating tantalum boat. The substrate holder and the heating boat were placed in a first vacuum chamber of the vacuum deposition system. Silver (Ag) was added to a resistance heating tungsten boat, which was then placed in a second vacuum chamber.
Among the compounds used in this example, compound Nos. −1 to −5 are shown below, in which the nitrogen atom having an “effective lone pair” is marked by a circle. Compound No. −1 is anthracene with no nitrogen atom. Compound Nos. −2 to −5 have an effective lone pair content [n/M] of less than 2.0×10−3 ([n/M]<2.0×10−3) although they contain a nitrogen atom or atoms.
[Chemical Formula 68]
On the other hand, compound Nos. 1, 39, 40, and 38 are illustrative compounds that have been shown to have an effective lone pair content [n/M] of 2.0×10−3 or more ([n/M] 2.0×10−3) in the section of embodiments. Table 2 below also shows the number [n] of effective lone pairs, the molecular weight [M], and the effective lone pair content [n/M] with respect to the compounds used in this example.
Subsequently, after the pressure in the first vacuum chamber was reduced to 4×10−4 Pa, the heating boat containing each compound was heated by passing a current through it, and a nitrogen-containing layer of each compound (an underlying layer in sample 103) with a thickness of 25 nm was formed on the substrate at a deposition rate of 0.1 nm/sec to 0.2 nm/sec.
The nitrogen-containing layer (or underlying layer)-bearing substrate was then transferred under vacuum to the second vacuum chamber. After the pressure in the second vacuum chamber was reduced to 4×10−4 Pa, the heating boat containing silver was heated by passing a current through it. In this process, an electrode layer of silver with a thickness of 6 nm was formed at a deposition rate of 0.1 nm/sec to 0.2 nm/sec, so that each of transparent electrode samples 103 to 1111 was obtained having a multilayer structure including the nitrogen-containing layer (or underlying layer) and the electrode layer placed thereon.
<Procedure for Preparing Transparent Electrode Samples 112 to 114>
Each transparent electrode of a three-layer structure including a nitrogen-containing layer of the material shown in Table 2, a high surface energy material layer of platinum (Pt), and an electrode layer of silver was formed on a glass substrate as described below.
First, a transparent alkali-free glass substrate was fixed on a substrate holder for a commercially available vacuum deposition system. Each of compound Nos. 1, 4, and 39 shown in Table 2 below for the preparation of each transparent electrode was added to a resistance heating tantalum boat. The substrate holder and the heating boat were placed in a first vacuum chamber of the vacuum deposition system. Silver (Ag) was added to a resistance heating tungsten boat, which was then placed in a second vacuum chamber of the vacuum deposition system. Platinum (Pt) was placed as a sputtering target in the vacuum chamber of a sputtering deposition system.
Compound Nos. 1, 4, and 39 are each an illustrative compound that has been shown to have an effective lone pair content [n/M] of 2.0×10−3 or more ([n/M] 2.0×10−3) in the section of embodiments. Table 2 below also shows the number [n] of effective lone pairs, the molecular weight [M], and the effective lone pair content [n/M] with respect to the compounds used in this example.
Subsequently, after the pressure in the first vacuum chamber was reduced to 4×10−4 Pa, the heating boat containing each compound was heated by passing a current through it, and a nitrogen-containing layer of each compound with a thickness of 25 nm was formed on the substrate at a deposition rate of 0.1 nm/sec to 0.2 nm/sec.
The nitrogen-containing layer-bearing substrate was then transferred to the vacuum chamber of the sputtering deposition system. In the vacuum chamber, platinum (Pt) was deposited by sputtering at a rate of 0.05 nm/sec to form a high surface energy material layer with a thickness of 0.5 nm.
The high surface energy material layer-bearing substrate was transferred to the second vacuum chamber of the vacuum deposition system. After the pressure in the second vacuum chamber was reduced to 4×10−4 Pa, the heating boat containing silver (Ag) was heated by passing a current through it. In this process, an electrode layer of silver with a thickness of 6 nm was formed at a deposition rate of 0.1 nm/sec to 0.2 nm/sec, so that each of transparent electrode samples 112 to 114 was obtained having the nitrogen-containing layer, the high surface energy material layer, and the electrode layer stacked in this order.
<Procedure for Preparing Transparent Electrode Samples 115 to 127>
Transparent electrode samples 115 to 127 were each obtained using the same procedure as for samples 112 to 114 shown above, except for the following. The compound shown in Table 2 below was used to form the nitrogen-containing layer, and the material used to form the high surface energy material layer was titanium (Ti). The high surface energy layer of titanium (Ti) was formed by electron beam deposition in another vacuum chamber different from that used in the formation of the nitrogen-containing layer and the electrode layer.
<Procedure for Preparing Transparent Electrode Samples 128 and 129>
Transparent electrode samples 128 and 129 were each obtained using the same procedure as for samples 112 to 114 shown above, except for the following. Each compound shown in Table 2 below was used to form the nitrogen-containing layer, and the material used to form the high surface energy material layer was titanium (Ti). The thickness of the electrode layer of silver was 8 nm. The high surface energy layer of titanium (Ti) was formed by electron beam deposition in another vacuum chamber different from that used in the formation of the nitrogen-containing layer and the electrode layer.
<Procedure for Preparing Transparent Electrode Samples 130 and 131>
Transparent electrode samples 128 and 129 were each obtained using the same procedure as for samples 112 to 114 shown above, except for the following. The substrate used was polyethylene terephthalate (PET). Each compound shown in Table 2 below was used to form the nitrogen-containing layer, and the material used to form the high surface energy material layer was titanium (Ti). The thickness of the electrode layer of silver was 8 nm. The high surface energy layer of titanium (Ti) was formed by electron beam deposition in another vacuum chamber different from that used in the formation of the nitrogen-containing layer and the electrode layer.
<Procedure for Preparing Transparent Electrode Sample 132>
A transparent electrode was prepared in the same way as shown above for sample 115. A high-refractive-index layer of titanium oxide (TiO2) with a thickness of 50 nm was then formed on the electrode layer of the transparent electrode. After the electrode layer was formed, the high-refractive-index layer was formed by electron beam deposition in another vacuum chamber different from that used in the formation of the electrode layer.
<Evaluation of Each Sample in Example 1>
Transparent electrode samples 101 to 132 prepared as described above were each measured for 550 nm wavelength light transmittance and sheet resistance. The light transmittance was measured with a spectrophotometer (U-3300 manufactured by Hitachi, Ltd.). The same substrate as that in the sample was used for the base line. The sheet resistance was measured with a resistivity meter (MCP-T610 manufactured by Mitsubishi Chemical Corporation) by four-terminal four-probe method under constant current application. The results are also shown in Table 2.
<Results of Valuation of Example 1>
The results in Table 2 show that the sheet resistance of transparent electrode samples 112 to 132, each including a nitrogen-containing layer of compound Nos. 1 to 45 with an effective lone pair content [n/M] in the specified range (2.0×10−3≦[n/M]), a high surface energy material layer placed thereon, and an electrode layer of silver, is kept at a low level of 20 Ω/square or less, even though the electrode layer for substantial conductivity is a very thin film of 8 nm or 6 nm. This demonstrates that in the transparent electrode configured according to the present invention, the electrode layer on the nitrogen-containing layer with the high surface energy material layer interposed therebetween is formed with a substantially uniform thickness in a monolayer growth mode (Frank van der Merwe (FM) mode).
It has also been found that transparent electrode samples 112 and 132, although having a high surface energy material layer, are practically usable because the high surface energy material layer with a thickness of about 0.5 nm is thin enough so that they have a light transmittance of 70% or more.
A comparison between sample 128 or 129 and sample 130 or 131, which only differ in substrate material, shows that the results are the same regardless of whether the substrate is glass or plastic (PET).
Particularly, comparisons between samples 115 and 128 and between samples 125 and 129, which only differ in electrode layer thickness, show the following. Regardless of whether the thickness of the electrode layer is 6 nm or 8 nm, the light transmittance is kept at a high level above 70%. As the thickness of the electrode layer is increased from 6 nm to 8 nm, the sheet resistance decreases. Thus, it has been demonstrated that the light transmittance and the conductivity can be increased at the same time.
Transparent electrode sample 132 having an additional high-refractive-index layer provided on the top of the electrode layer is compared with transparent electrode sample 115 with no high-refractive-index layer. As a result, it has been found that the addition of the high-refractive-index layer increases the light transmittance by as much as about 15%.
In contract, transparent electrode samples 101 to 111 with no high surface energy material layer have a light transmittance of as low as 60% or less and a sheet resistance of as high as 30 Ω/square or more as compared with transparent electrode samples 112 to 132 shown above.
Samples 101 to 103 with no nitrogen-containing layer and samples 104 to 107 having a nitrogen-containing layer of compound Nos. −1 to −5 with an effective lone pair content [n/M] of less than 2.0×10−3 (2.0×10−3>[n/M]) were not able to be measured for sheet resistance and were not suitable for use as electrodes. In addition, these samples had a light transmittance of less than 50% and were not suitable for use as transparent electrodes. Sample 102 with no nitrogen-containing layer or underlying layer was not suitable for use as a transparent electrode because the electrode layer was as thick as 15 nm so that it had a low light transmittance, although it had a low sheet resistance.
The graph of
The same results were obtained also when the nitrogen-containing layer was formed by a coating method with compound No. 19 or 20.
It is apparent from the above that when the compound is selected based on its effective lone pair content [n/M] as an index and used to form the nitrogen-containing layer adjacent to the electrode layer, the resulting electrode film (namely, the resulting transparent electrode) has low resistance while it is thin enough to be optically transparent.
Each transparent electrode was formed according to the composition shown in Table 3 below. Bottom emission organic electroluminescent device samples 201 to 216 were each prepared using the transparent electrode as an anode, which was provided on the lower side of the light-emitting functional layer. The procedure for the preparation will be described with reference to
<Procedure for Preparing Organic Electroluminescent Device Samples 201 to 216>
(Formation of Transparent Electrode 1)
First, for samples 201 to 216, each nitrogen-containing layer 1a of the compound shown in Table 3 below was formed with a thickness of 25 nm on the upper side of a transparent substrate 13′ made of transparent PET.
For samples 201 to 203, a 6-nm-thick electrode layer of silver (Ag) was then formed on the upper side of the nitrogen-containing layer 1a, so that a transparent electrode of a two-layer structure including the nitrogen-containing layer 1a and the electrode layer 1b was formed.
On the other hand, for samples 204 to 216, a high surface energy material layer A of the material shown in Table 3 below was formed with a thickness of 0.5 nm on the upper side of the nitrogen-containing layer 1a. Subsequently, an electrode layer of silver (Ag) was formed with each thickness shown in Table 3 below. Thus, a transparent electrode 1 of a three-layer structure including the nitrogen-containing layer 1a, the high surface energy material layer A, and the electrode layer 1b was formed.
(Formation of Hole Transport/Injection Layer 31)
First, a heating boat containing α-NPD of the structural formula shown below as a hole transport/injection material was heated by passing a current through it so that a hole transport/injection layer 31 of α-NPD for serving as both a hole injection layer and a hole transport layer was formed on the transparent electrode 1. In this process, the deposition rate was 0.1 nm/sec to 0.2 nm/sec, and the thickness of the layer was 20 nm.
[Chemical Formula 69]
(Formation of Light-Emitting Layer 32)
Subsequently, a heating boat containing host material H-1 of the structural formula shown below and a heating boat containing phosphorescence-emitting compound Ir1 of the structural formula shown below were each independently energized so that a light-emitting layer 32 composed of host material H-1 and phosphorescence-emitting compound Ir1 was formed on the hole transport/injection layer 31. In this process, the passage of current through the heating boats was controlled so that the deposition rate ratio of host material H-1 to phosphorescence-emitting compound Ir1 was 100:6. The thickness of the layer was 30 nm.
[Chemical Formula 70]
(Formation of Hole-Blocking Layer 33)
Subsequently, a heating boat containing BAlq of the structural formula shown below as a hole-blocking material was heated by passing a current through it so that a hole-blocking layer 33 of BAlq was formed on the light-emitting layer 32. In this process, the deposition rate was 0.1 nm/sec to 0.2 nm/sec, and the thickness of the layer was 10 nm.
[Chemical Formula 71]
(Formation of Electron Transport/Injection Layer 34)
Subsequently, a heating boat containing compound 10 of the structural formula shown above as an electron transport material and a heating boat containing potassium fluoride were each independently energized so that an electron transport/injection layer 34 for serving as both an electron injection layer and an electron transport layer composed of compound 10 and potassium fluoride was formed on the hole-blocking layer 33. In this process, the passage of current through the heating boats was controlled so that the deposition rate ratio of compound 10 to potassium fluoride was 75:25. The thickness of the layer was 30 nm. Compound 10 corresponds to compound No. 7 with an effective lone pair content [n/M] in the specified range.
(Formation of Counter Electrode 5-2 (Formation of Cathode))
After the process, the light-emitting functional layer 3-bearing transparent substrate 13′ was transferred into a second vacuum chamber of the vacuum deposition system. After the pressure in the second vacuum chamber was reduced to 4×10−4 Pa, a heating boat containing aluminum, placed in the second vacuum chamber, was heated by passing a current through it. In this process, a counter electrode 5-2 of aluminum with a thickness of 100 nm was formed at a deposition rate of 0.3 nm/sec. The counter electrode 5-2 is used as a cathode. In this way, a bottom emission organic electroluminescent device EL-2 was formed on the transparent substrate 13′.
(Sealing of Device)
Subsequently, the organic electroluminescent device EL-2 was covered with a sealant 17′ of a 300-μm-thick glass base material. While the organic electroluminescent device EL-2 was covered, an adhesive 19 (sealing material) was applied between the sealant 17′ and the transparent substrate 13′. The adhesive 19 used was a photo-curing epoxy adhesive (LUXTRAK LC0629B manufactured by Toagosei Co., Ltd.). The adhesive 19 applied between the sealant 17′ and the transparent substrate 13′ was irradiated with UV light from the glass sealant 17′ side, so that the adhesive 19 was cured to seal the organic electroluminescent device EL-2.
In the process of forming the organic electroluminescent device EL-2, a vapor deposition mask was used in the formation of each layer, so that a 4.5 cm×4.5 cm light-emitting region a was formed at the center of the 5 cm×5 cm transparent substrate 13′, and a non-light-emitting region b with a width of 0.25 cm was formed around the whole of the light-emitting region a. The electrode layer 1b of the transparent electrode 1 as an anode was formed to have a terminal part extending to the edge of the transparent substrate 13′, while it was insulated from the counter electrode 5-2 as a cathode with the components from the hole transport/injection layer 31 to the electron transport/injection layer 34.
In this way, each of light-emitting panels of organic electroluminescent device samples 201 to 203 was obtained, which had the organic electroluminescent device EL-2 provided on the transparent substrate 13′ and sealed with the sealant 17′ and the adhesive 19. In each light-emitting panel, emitted light h of each color produced by the light-emitting layer 32 is extracted from the transparent substrate 13′ side.
<Evaluation of Each Sample in Example 2>
The prepared organic electroluminescent device EL-2 samples 201 to 216 (light-emitting panels) were measured for driving voltage and evaluated for variations in luminance, and storage stability at high temperature and high humidity. The results are also shown in Table 3.
In the measurement, the driving voltage was determined as the voltage obtained when the front luminance on the transparent electrode 1 side (namely, the transparent substrate 13′ side) of each organic electroluminescent device EL-2 reached 1,000 cd/m2. The luminance was measured with a spectral radiance meter CS-1000 (manufactured by Konica Minolta Sensing Co., Ltd.). The smaller the measured driving voltage, the better the result.
Variations in luminance were evaluated as follows. A current of 2.5 mA/cm2 was applied to each organic electroluminescent device EL-2 when the luminance at the center of the light-emitting surface (the central luminance) on the transparent electrode 1 side (namely, the transparent substrate 13′ side) and the luminance at an end part close to the feeding point (the end luminance) on the transparent electrode 1 side were measured. The luminance was measured with the spectral radiance meter CS-1000 (manufactured by Konica Minolta Sensing Co., Ltd.). The ratio of the measured central luminance to the measured end luminance was calculated as a measure of variations in luminance. Therefore, the measure of variations in luminance represents the uniformity of emission luminance in the light-emitting surface, and the closer to 100%, the better the result.
The storage stability at high temperature and high humidity was evaluated as follows. Each of light-emitting panel samples 201 to 216 was stored in a high-temperature, high-humidity environment (at a temperature of 60° C. and a humidity of 90%) for 300 hours. Evaluations were made for the difference ΔV between the driving voltages of each light-emitting panel before and after the storage and for the rectification ratio after the storage. Before and after the storage, each light-emitting panel was driven at a luminance of 1,000 cd, and the driving voltage difference ΔV was calculated as a change in the measured driving voltage. The smaller the calculated driving voltage difference ΔV, the better the result. The rectification ratio was determined as follows. After the storage, the current values were measured when a forward driving voltage of +2.5 V was applied and when a backward driving voltage of −2.5 V was applied. The rectification ratio (log) was calculated as the logarithm of the ratio between the current values [(the current value at +2.5 V)/(the current value at −2.5 V)). The higher the rectification ratio (log), the better the leakage characteristics. The results are also shown in Table 3 below.
<Results of Evaluation in Example 2>
The results in Table 3 show that organic electroluminescent device samples 204 to 216, corresponding to the organic electroluminescent device EL-2 having the transparent electrode 1 including the nitrogen-containing layer 1a of one of compound Nos. 1 to 45 with an effective lone pair content [n/M] of 2.0×10−3 or more (2.0×10−3≦[n/M]), the high surface energy material layer A provided thereon, and the electrode layer 1b of silver, can emit light with a front luminance of 1,000 cd/m2 at a driving voltage of 10 V or less, specifically, a driving voltage of as low as 6 V or less. It is also shown that in organic electroluminescent device EL-2 samples 204 to 216, the measure of variations in luminance, which represents the uniformity of emission in the light-emitting surface, is as high as more than 90%, so that variations in luminance are kept at low level. Organic electroluminescent device EL-2 samples 204 to 216 have also been found to emit light even after the storage in a high-temperature, high-humidity environment. Organic electroluminescent device EL-2 samples 204 to 216 have also been found to have high storage stability at high temperature and high humidity because the driving voltage difference ΔV is small and the rectification ratio after the storage is satisfactory so that leakage is suppressed. This also demonstrates that the electrode layer 1b of silver forms a continuous film with barrier properties to prevent the degradation of the light-emitting functional layer 3 including organic materials.
In contrast, organic electroluminescent device samples 201 to 203, having a transparent electrode without the high surface energy material layer A, have higher driving voltages, larger variations in luminance, and lower storage stability at high temperature and high humidity than samples 204 to 216 shown above. Specifically, organic electroluminescent device sample 201 or 202, having a nitrogen-containing layer of compound No. −2 or −4 with an effective lone pair content [n/M] out of the specified range, did not emit light even at a driving voltage of more than 10 V.
It is apparent from the above that the organic electroluminescent device EL-2 having the transparent electrode 1 configured according to the present invention can emit light with high luminance at a low driving voltage and has high storage stability. This also indicates the potential for reducing driving voltage for a certain level of luminance and the potential for improving emission lifetime.
Transparent electrode samples 112 to 132 prepared in Example 1 according to the structure of the present invention were each used as an anode to form white bottom emission organic electroluminescent devices, in which the anode was provided on the lower side of the light-emitting functional layer. Each prepared organic electroluminescent device was evaluated as in Example 2. As a result, it has been found that as in Example 2, variations in luminance are kept at small level and the light-emitting functional layer including organic materials is prevented from being degraded. Thus, it has been demonstrated that the structure of the present invention is also advantageously effective in providing white light-emitting organic electroluminescent devices.
In Example 3, each white light-emitting organic electroluminescent device was prepared by the procedure shown below.
First, each of transparent electrode samples 112 to 132 in Example 1 according to the structure of the present invention was formed as an anode on a transparent glass substrate with a size of 30 mm×30 mm and a thickness of 0.7 mm. Each anode-bearing transparent substrate was then fixed on the substrate holder of a commercially available vapor deposition system.
On the other hand, each vapor deposition crucible in the vacuum deposition system was charged with the material, for each layer to be subsequently formed, in an amount optimal for the preparation of each device. Each crucible was fixed in the vacuum deposition system. The vapor deposition crucible used was made of a molybdenum or tungsten material for resistance heating.
Subsequently, after the pressure in the vacuum deposition system was reduced to a degree of vacuum of 1×10−4 Pa, the vapor deposition crucible containing α-NPD shown above was heated by passing a current through it, and α-NPD was vapor-deposited at a deposition rate of 0.1 nm/sec to form a 40-nm-thick hole injection/transport layer on the transparent electrode.
Subsequently, compound BD-1 shown below as a blue light-emitting dopant and compound H-2 shown below as a host compound were co-vapor-deposited at a deposition rate of 0.1 nm/sec in such a way that compound BD-1 was at a concentration of 5%, so that a 15-nm-thick fluorescent light-emitting layer for blue emission was formed.
[Chemical Formula 72]
Subsequently, compound GD-1 shown below as a green light-emitting dopant, compound RD-1 shown below as a red light-emitting dopant, and compound H-3 shown below as a host compound were co-vapor-deposited at a deposition rate of 0.1 nm/sec in such a way that compound GD-1 and compound RD-1 were at concentrations of 17% and 0.8%, respectively, so that a 15-nm-thick phosphorescent light-emitting layer for yellow color was formed. Compound GD-1 corresponds to compound D-15 shown above as a light-emitting dopant, and compound RD-1 corresponds to compound D-1 shown above as a light-emitting dopant.
[Chemical Formula 73]
Subsequently, compound E-1 shown below was vapor-deposited at a deposition rate of 0.1 nm/sec so that a 30-nm-thick electron transport layer was formed. Compound E-1 corresponds to compound 10 shown above as a material for the nitrogen-containing layer.
[Chemical Formula 74]
Subsequently, after a 1.5-nm-thick LiF film was formed, aluminum was vapor-deposited with a thickness of 110 nm to form a cathode.
The non-light-emitting surface of the resulting device was then covered with a glass case, so that each organic electroluminescent device was obtained.
Transparent electrode samples 112 to 132 prepared in Example 1 according to the structure of the present invention were each used as an anode to form white light-emitting tandem organic electroluminescent devices, in which the anode was provided on the lower side of the light-emitting functional layer. Each prepared organic electroluminescent device was evaluated as in Example 2. As a result, it has been found that as in Example 2, variations in luminance are kept at small level and the light-emitting functional layer including organic materials is prevented from being degraded. Thus, it has been demonstrated that the structure of the present invention is also advantageously effective in providing tandem organic electroluminescent devices.
In Example 4, each tandem organic electroluminescent device was prepared by the procedure shown below.
First, each of transparent electrode samples 112 to 132 in Example 1 according to the structure of the present invention was formed as an anode on a transparent glass substrate with a size of 30 mm×30 mm and a thickness of 0.7 mm. Each anode-bearing transparent substrate was then fixed on the substrate holder of a commercially available vapor deposition system.
On the other hand, each vapor deposition crucible in the vacuum deposition system was charged with the material, for each layer to be subsequently formed, in an amount optimal for the preparation of each device. Each crucible was fixed in the vacuum deposition system. The vapor deposition crucible used was made of a molybdenum or tungsten material for resistance heating.
Subsequently, after the pressure in the vacuum deposition system was reduced to a degree of vacuum of 1×10−4 Pa, the vapor deposition crucible containing α-NPD shown above was heated by passing a current through it, and α-NPD was vapor-deposited at a deposition rate of 0.1 nm/sec to form a 40-nm-thick hole injection/transport layer on the transparent electrode.
Subsequently, compound BD-1 shown above as a blue light-emitting dopant and compound H-2 shown above as a host compound were co-vapor-deposited at a deposition rate of 0.1 nm/sec in such a way that compound BD-1 was at a concentration of 5%, so that a 30-nm-thick fluorescent light-emitting layer for blue emission was formed.
Subsequently, compound E-1 shown above was vapor-deposited at a deposition rate of 0.1 nm/sec so that a 30-nm-thick electron transport layer was formed.
Subsequently, a 1-nm-thick lithium film was vapor-deposited to form an intermediate metal layer.
Subsequently, α-NPD shown above was vapor-deposited at a deposition rate of 0.1 nm/sec to form a 50-nm-thick hole injection/transport layer.
Subsequently, compound GD-1 shown above as a green light-emitting dopant, compound RD-1 shown above as a red light-emitting dopant, and compound H-3 shown above as a host compound were co-vapor-deposited at a deposition rate of 0.1 nm/sec in such a way that compound GD-1 and compound RD-1 were at concentrations of 17% and 0.8%, respectively, so that a 30-nm-thick phosphorescent light-emitting layer for yellow color was formed.
Subsequently, compound E-1 shown above was vapor-deposited at a deposition rate of 0.1 nm/sec so that a 30-nm-thick electron transport layer was formed.
Subsequently, after a 1.5-nm-thick LiF film was formed, aluminum was vapor-deposited with a thickness of 110 nm to form a cathode.
The non-light-emitting surface of the resulting device was then covered with a glass case, so that each organic electroluminescent device was obtained.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2012-185433 | Aug 2012 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2013/072269 | 8/21/2013 | WO | 00 |
