Claims
- 1. A method of treating a component of a deposition apparatus, comprising:
forming a pattern of projections along a surface of the component; bending the projections; and exposing the projections to one or both of mechanical roughening and chemical etching to form microstructures on the projections.
- 2. The method of claim 1 wherein the projections are exposed to the mechanical roughening, and wherein the mechanical roughening comprises exposure of the projections to a rigid bristles.
- 3. The method of claim 1 wherein the projections are exposed to the mechanical roughening, and wherein the mechanical roughening comprises exposure of the projections to a pressurized stream of particles.
- 4. The method of claim 3 wherein the particles comprise one or both of solid H2O and solid CO2.
- 5. The method of claim 3 wherein the particles comprise a salt.
- 6. The method of claim 5 wherein the salt is soluble in water.
- 7. The method of claim 6 wherein the salt is a salt of bicarbonate.
- 8. The method of claim 3 wherein the particles comprise one or both of silicon carbide and aluminum oxide; and wherein the exposure of the region to the pressurized stream comprises utilization of a pressure of less than 20 psi within the stream during the-exposure.
- 9. The method of claim 3 wherein the particles comprise one or both of silicon carbide and aluminum oxide; and further comprising brushing the region after the exposure to the particles.
- 10. The method of claim 3 wherein the particles comprise one or both of silicon carbide and aluminum oxide; and further comprising exposing the region to a stream of cleaning agent after the exposure to the particles.
- 11. The method of claim 10 wherein the cleaning agent comprises one or both of solid H2O and solid CO2.
- 12. The method of claim 1 wherein the projections are exposed to the chemical etching, and wherein the chemical etching comprises exposure of the projections to a basic solution.
- 13. The method of claim 1 wherein the projections are exposed to the chemical etching, and wherein the chemical etching comprises exposure of the projections to an acidic solution.
- 14. The method of claim 1 wherein the projections are exposed to both the chemical etching and the mechanical roughening.
- 15. The method of claim 1 wherein the apparatus is a PVD apparatus.
- 16. The method of claim 1 wherein the apparatus is an ALD apparatus.
- 17. The method of claim 16 wherein the ALD apparatus comprises a reaction chamber having an interior sidewall, and wherein the component is the interior sidewall of the reaction chamber.
- 18. The method of claim 1 wherein the apparatus is a CVD apparatus.
- 19. The method of claim 18 wherein the CVD apparatus comprises a reaction chamber having an interior sidewall, and wherein the component is the interior sidewall of the reaction chamber.
- 20. The method of claim 18 wherein the apparatus is a MOCVD apparatus.
- 21. A component treated by the method of claim 1.
- 22. The component of claim 21 being a component of an ALD apparatus.
- 23. The component of claim 21 being a component of a CVD apparatus.
- 24. The component of claim 21 being a component of a PVD apparatus.
- 25. A method of treating a region of a PVD component, comprising:
forming a pattern of projections along the region; bending the projections; and exposing the projections to one or both of mechanical roughening and chemical etching to form microstructures on the projections.
- 26. The method of claim 25 wherein the component is not a sputtering target.
- 27. The method of claim 25 wherein the component is a coil.
- 28. The method of claim 27 wherein the coil is an annular ring and has a radially inner periphery and a radially outer periphery of the ring; and wherein the treated region is along the radially inner periphery of the ring.
- 29. The method of claim 27 wherein the coil is an annular ring and has a radially inner periphery and a radially outer periphery of the ring; and wherein the treated region is along the radially outer periphery of the ring.
- 30. The method of claim 27 wherein the coil is an annular ring and has a radially inner periphery and a radially outer periphery of the ring; and wherein the treated region is along the radially inner periphery of the ring and along the radially outer periphery of the ring.
- 31. The method of claim 25 wherein the component is a cup.
- 32. The method of claim 25 wherein the component is a pin.
- 33. The method of claim 25 wherein the component is a shield.
- 34. The method of claim 25 wherein the component is a cover ring.
- 35. The method of claim 25 wherein the component is a clamp.
- 36. The method of claim 25 wherein the component is an interior sidewall of a PVD reaction chamber.
- 37. The method of claim 25 wherein the projections are bent prior to exposing the projections to the one or both of the mechanical roughening and the chemical etching.
- 38. The method of claim 25 wherein the projections are bent after exposing the projections to the one or both of the mechanical roughening and the chemical etching.
- 39. The method of claim 25 wherein the pattern of projections is formed as a scroll pattern by utilizing a CNC tool to cut into the region of the component.
- 40. The method of claim 25 wherein the projections are exposed to the mechanical roughening, and wherein the mechanical roughening comprises exposure of the projections to a rigid bristles.
- 41. The method of claim 25 wherein the projections are exposed to the mechanical roughening, and wherein the mechanical roughening comprises exposure of the projections to a pressurized stream of particles.
- 42. The method of claim 41 wherein the particles comprise one or both of solid H2O and solid CO2.
- 43. The method of claim 41 wherein the particles comprise a salt.
- 44. The method of claim 43 wherein the salt is soluble in water.
- 45. The method of claim 44 wherein the salt is a salt of bicarbonate.
- 46. The method of claim 41 wherein the particles comprise one or both of silicon carbide and aluminum oxide; and wherein the exposure of the region to the pressurized stream comprises utilization of a pressure of less than 20 psi within the stream during the exposure.
- 47. The method of claim 41 wherein the particles comprise one or both of silicon carbide and aluminum oxide; and further comprising brushing the region after the exposure to the particles.
- 48. The method of claim 41 wherein the particles comprise one or both of silicon carbide and aluminum oxide; and further comprising exposing the region to a stream of cleaning agent after the exposure to the particles.
- 49. The method of claim 48 wherein the cleaning agent comprises one or both of solid H2O and solid CO2.
- 50. The method of claim 25 wherein the projections are exposed to the chemical etching, and wherein the chemical etching comprises exposure of the projections to a basic solution.
- 51. The method of claim 25 wherein the projections are exposed to the chemical etching, and wherein the chemical etching comprises exposure of the projections to an acidic solution.
- 52. The method of claim 25 wherein the projections are exposed to both the chemical etching and the mechanical roughening.
- 53. The method of claim 25 wherein the bent projections have bases, wherein the region of the component has a surface extending between the bases of the bent projections, and wherein the bent projections have a maximum height above the surface of from about 0.0001 inches to about 0.01 inches.
- 54. The method of claim 25 wherein a periodic repeat of the bent projections across the region occurs in a distance of from about 0.0001 inches to about 1 inch.
- 55. A PVD component treated by the method of claim 25.
- 56. The PVD component of claim 55 being a coil.
- 57. The PVD component of claim 56 wherein the coil is an annular ring and has a radially inner periphery and a radially outer periphery of the ring; and wherein the treated region is along the radially inner periphery of the ring.
- 58. The PVD component of claim 56 wherein the coil is an annular ring and has a radially inner periphery and a radially outer periphery of the ring; and wherein the treated region is along the radially outer periphery of the ring.
- 59. The PVD component of claim 56 wherein the coil is an annular ring and has a radially inner periphery and a radially outer periphery of the ring; and wherein the treated region is along the radially inner periphery of the ring and along the radially outer periphery of the ring.
- 60. The PVD component of claim 55 being a cup.
- 61. The PVD component of claim 55 being a shield.
- 62. The PVD component of claim 55 being a cover ring.
- 63. The PVD component of claim 55 being a clamp.
RELATED PATENT DATA
[0001] This patent has priority to U.S. Provisional Application Serial No. 60/477,810, filed Jun. 11, 2003, and to U.S. Provisional Application Serial No. 60/498,036, filed Aug. 26, 2003; additionally, this patent is a continuation-in-part of U.S. patent application Ser. No. 10/614,806, filed Jul. 9, 2003, which claims priority to U.S. Provisional Application Serial No. 60/396,543, which was filed Jul. 16, 2002.
Provisional Applications (3)
|
Number |
Date |
Country |
|
60477810 |
Jun 2003 |
US |
|
60498036 |
Aug 2003 |
US |
|
60396543 |
Jul 2002 |
US |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
10614806 |
Jul 2003 |
US |
Child |
10837555 |
Apr 2004 |
US |