Claims
- 1. An undercoating composition for photolithographic resist which comprises, as a uniform solution:
(A) a nitrogen-containing organic compound having, in a molecule, at least two amino groups substituted by at least one substituent group selected from the group consisting of hydroxyalkyl groups and alkoxyalkyl groups; (B) an acid selected from the group consisting of aliphatic carboxylic acids and inorganic sulfur-containing acids; (C) an organic solvent; and (D) a light-absorbing compound which is an anthracene compound having at least one hydroxyl group or carboxyl group in a molecule.
- 2. The undercoating composition for photolithographic resist as claimed in claim 1 in which the component (D) is an anthracene compound having at least one hydroxyl group in a molecule selected from the group consisting of 1-hydroxy anthracene, 9-hydroxy anthracene, 1,2-dihydroxy anthracene, 1,5-dihydroxy anthracene, 9,10-dihydroxy anthracene, 1,2,3-trihydroxy anthracene, 1,2,3,4-tetrahydroxy anthracene, 1,2,3,4,5,6-hexahydroxy anthracene, 1,2,3,4,5,6,7,8-octahydroxy anthracene, 1-hydroxymethyl anthracene, 9-hydroxymethyl anthracene, 9-hydroxyethyl anthracene, 9-hydroxyhexyl anthracene, 9-hydroxyoctyl anthracene and 9,10-di(hydroxymethyl) anthracene.
- 3. The undercoating composition for photolithographic resist as claimed in claim 1 in which the component (D) is an anthracene compound having at least one carboxyl group in a molecule selected from the group consisting of 9-anthracene carboxylic acid, 9,10-anthracene dicarboxylic acid, glycidylanthracene carboxylic acids and condensation products between glycidylanthracenyl methyl alcohol or anthracenyl methyl alcohol and a polycarboxylic acid.
- 4. The undercoating composition for photolithographic resist as claimed in claim 3 in which the component (D) is 9-anthracene carboxylic acid or 9,10-anthracene dicarboxylic acid.
- 5. The undercoating composition for photolithographic resist as claimed in claim 1 in which the nitrogen-containing organic compound as the component (A) is a triazine compound.
- 6. The undercoating composition for photolithographic resist as claimed in claim 5 in which the triazine compound is a benzoguanamine compound.
- 7. The undercoating composition for photolithographic resist as claimed in claim 1 in which the acid as the component (B) is selected from the group consisting of aliphatic sulfonic acids, alkylbenzene sulfonic acids and sulfuric acid.
- 8. The undercoating composition for photolithographic resist as claimed in claim 7 in which the acid as the component (B) is methanesulfonic acid or dodecylbenzene sulfonic acid.
- 9. The undercoating composition for photolithographic resist as claimed in claim 1 in which the amount of the component (B) is in the range from 0.1 to 10 parts by weight per 100 parts by weight of the component (A).
- 10. The undercoating composition for photolithographic resist as claimed in claim 1 in which the amount of the component (D) is in the range from 5 to 70% by weight based on the total amount of the components (A), (B) and (D).
Priority Claims (3)
Number |
Date |
Country |
Kind |
11-020506 |
Jan 1999 |
JP |
|
11-020507 |
Jan 1999 |
JP |
|
11-020508 |
Jan 1999 |
JP |
|
Parent Case Info
[0001] This is a continuation-in-part application from a copending U.S. patent application Ser. No. 09/742,392 filed Dec. 22, 2000, which is a divisional application from another copending U.S. patent application Ser. No. 09/493,098 filed Jan. 28, 2000.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09493098 |
Jan 2000 |
US |
Child |
09742392 |
Dec 2000 |
US |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09742392 |
Dec 2000 |
US |
Child |
09803907 |
Mar 2001 |
US |