Patent Application
20240027910
This U.S. non-provisional patent application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2022-0087787, filed on Jul. 15, 2022, in the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference.
The inventive concept relates to an underlayer composition for photolithography used for manufacturing a semiconductor device, a multilayer structure formed using the same, and a method of manufacturing a semiconductor device using the same.
Photolithography may include an exposure process and a developing process. Performing the exposure process may include irradiating light of a specific wavelength to a resist layer to induce a change in a chemical structure of the resist layer. Performing the developing process may include selectively removing an exposed portion or an unexposed portion of the resist layer, by using a solubility difference between the exposed portion and the unexposed portion of the resist layer.
Recently, as a semiconductor device is highly integrated and miniaturized, a critical dimension of patterns in the semiconductor device becomes fine. For a formation of fine patterns, various studies are conducted to suppress collapse of a resist pattern while improving resolution and sensitivity of the resist pattern formed by the photolithography.
An embodiment of the inventive concept provides an underlayer composition capable of improving resolution and sensitivity of a resist pattern and suppressing collapse of a resist pattern, a multilayer structure formed using the same, and a method of manufacturing a semiconductor device using the same.
The problem to be solved by the inventive concept is not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.
According to embodiments of the inventive concept, an underlayer composition for photolithography may include a copolymer, and the copolymer may include a first repeating unit having a first functional group. The first functional group is represented by one of Chemical Formulas 1 to 4.
In Chemical Formulas 1 to 4, “R1”, “R2”, “R3”, “R4”, “R5”, “R6”, and “R7” are each independently hydrogen, deuterium, or an alkyl group having 1 to 3 carbon atoms, and “*” is a part bonded to the first repeating unit of the copolymer.
According to embodiments of the inventive concept, a multilayered structure may include a lower layer, an underlayer on the lower layer, and a photoresist layer on the underlayer. The photoresist layer may include a fluorinated alkyl group. The underlayer may include a monomolecule having a vinyl group (—CH═CH2), or a copolymer having a first functional group. The first functional group is represented by one of Chemical Formulas 1 to 4 above-described.
According to embodiments of the inventive concept, a method of manufacturing a semiconductor device may include forming an underlayer on a lower layer and forming a photoresist layer on the underlayer. The forming of the underlayer may include applying an underlayer composition on the lower layer. The forming of the photoresist layer may include applying a resist composition containing a fluorinated alkyl group on the underlayer using a fluorine-based solvent. The underlayer composition may include a monomolecule having a vinyl group (—CH═CH2), or a copolymer having a first functional group. The first functional group is represented by one of Chemical Formulas 1 to 4 above-described.
Example embodiments will be more clearly understood from the following brief description taken in conjunction with the accompanying drawings. The accompanying drawings represent non-limiting, example embodiments as described herein.
In order to fully understand the configuration and effects of the inventive concept, preferred embodiments of the inventive concept will be described with reference to the accompanying drawings. However, the inventive concept is not limited to the embodiments disclosed below, and may be embodied in various forms and various modifications may be made. However, it is provided so that the disclosure of the inventive concept is complete through the description of the present embodiments, and to fully inform those of ordinary skill in the art to which the inventive concept, the scope of the inventive concept. Those of ordinary skill in the art will understand that the inventive concept may be practiced in any suitable environment.
The terminology used herein is for the purpose of describing the embodiments and is not intended to limit the inventive concept. As used herein, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, ‘comprises’ and/or ‘comprising’ refers to a referenced material, component, step, operation and/or element being one or more other substances, components, steps, operations and/or elements. or the presence or addition of elements.
Herein, an alkyl group may be a linear alkyl group, a branched alkyl group, or a cyclic alkyl group. The number of carbon atoms in the alkyl group is not particularly limited, but may be an alkyl group having 1 to 3 carbon atoms. Examples of the alkyl group include, but are not limited to, a methyl group, an ethyl group, and a propyl group.
Herein, a halogen group may include, for example, fluorine (F), chlorine (Cl), bromine (Br), and iodine (I), but is not limited thereto.
Hereinafter, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and duplicate descriptions thereof are omitted.
An Underlayer Composition According to Embodiments of the Inventive Concept is Described.
According to embodiments of the inventive concept, an underlayer composition may be used for manufacturing a semiconductor device, and may be used for a photolithography process for the manufacturing of the semiconductor device. The underlayer composition may be used, for example, in an extreme ultraviolet or e-beam lithography process. Extreme ultraviolet may refer to ultraviolet having a wavelength of 10 nm to 124 nm, specifically, a wavelength of 13.0 nm to 13.9 nm, and more specifically, a wavelength of 13.4 nm to 13.6 nm.
According to some embodiments, the underlayer composition may include a monomolecule having a vinyl group (—CH═CH2). For example, the monomolecule may include a vinyl group (≡Si—CH═CH2) bonded to a silicon atom. The monomolecule may include at least one of vinyldisilazane, vinylchlorosilane, and vinyloxysilane. The monomolecule may include, for example, at least one selected from the group consisting of 1,3-divinyltetramethyldisilazane (DVS), vinyltrimethoxysilane (VTMS), vinyltrimethoxysilane, vinyltrichlorosilane, vinylmethyldichlorosilane, vinyldimethylchlorosilane, tris(2-methoxyethoxy)(vinyl)silane, 3-(methacryloyloxy)propyltrimethoxysilane, 3-(acryloyloxy)propyltrimethoxysilane, trimethoxy(4-vinylphenyl)silane, 3-methacryloyloxy)propylmethyldiethoxysilane, and 3-(methacryloyloxy)propylmethyldiethoxysilane.
According to some embodiments, the underlayer composition may include a copolymer, and the copolymer may include a first repeating unit having a first functional group. The first functional group may be represented by one of Chemical Formulas 1 to 4.
In Chemical Formulas 1 to 4, “R1”, “R2”, “R3”, “R4”, “R5”, “R6”, and “R7” are each independently hydrogen, deuterium, or an alkyl group having 1 to 3 carbon atoms, and “*” is a part bonded to the first repeating unit of the copolymer.
For example, Chemical Formula 1 may include a functional group represented by Chemical Formula 1-1.
For example, Chemical Formula 2 may include a functional group represented by Chemical Formula 2-1.
For example, Chemical Formula 3 may include a functional group represented by Chemical Formula 3-1.
For example, Chemical Formula 4 may include a functional group represented by Chemical Formula 4-1 or Chemical Formula 4-2.
The first repeating unit may include a structure represented by one of Chemical Formulas 5-1 to 5-20. In the following Chemical Formulas 5-1 to 5-20, “M” is the first functional group. In the following Chemical Formulas 5-1 to 5-20, when a chemical bond is not drawn at a position where a chemical bond is to be drawn, it may mean that a hydrocarbon group is bonded to the position.
The copolymer may further include a second repeating unit having a second functional group. The second functional group may be one of —NH—, —OH, —OCH3, —COOH, and —SH. The first repeating unit may be derived from the same monomer as the second repeating unit. The first repeating unit may have a structure in which hydrogen of the second functional group of the second repeating unit is substituted with the first functional group. The second repeating unit may include a structure represented by one of Chemical Formulas 6-1 to 6-20. In the following Chemical Formulas 6-1 to 6-20, when a chemical bond is not drawn at a position where a chemical bond is to be drawn, it may mean that a hydrocarbon group is bonded to the position.
The copolymer may further include a third repeating unit different from the first repeating unit and the second repeating unit. The third repeating unit may be derived from a monomer different from the first repeating unit and the second repeating unit. For example, the first repeating unit and the second repeating unit may be derived from a first monomer, and the third repeating unit may be derived from a second monomer different from the first monomer. The third repeating unit may include a structure represented by one of Chemical Formulas 7-1 to 7-4. In the following Chemical Formulas 7-1 to 7-4, when a chemical bond is not drawn at a position where a chemical bond is to be drawn, it may mean that a hydrocarbon group is bonded to the position.
The copolymer may include the structure of Chemical Formula 8.
-(A)x-(A′)y-(B)z- [Chemical Formula 8]
“A′” may be the first repeating unit, “A” may be the second repeating unit, and “B” may be the third repeating unit. “x”, “y” and “z” may represent a ratio between the first to third repeating units. As an example, a ratio of “(x+y)” to “z” may be in a range of 40:60 to 60:40. For example, a ratio of “x” to “y” may be in a range of 90:10 to 30:70.
The first repeating unit may have a structure in which hydrogen of the second functional group of the second repeating unit is substituted with the first functional group. Hereinafter, exemplary methods in which the first functional group is introduced into the second functional group will be described with reference to Chemical equations 1-1 to 1-6. In the Chemical equations 1-1 to 1-6, when a chemical bond is not drawn at a position where a chemical bond is to be drawn, it may mean that a hydrocarbon group is bonded to the position.
In a case of a compound containing a chemical bond of a hetero element and hydrogen, a silylvinyl functional group may be introduced into a molecular structure of the compound through a silylation reaction using vinylchlorosilane and a weakly basic reagent as in Chemical equations 1-1 to 1-4 and Chemical equation 1-6, or a substitution reaction using vinyldisilazane as in Chemical equation 1-5.
The copolymer represented by Chemical Formula 8 may include at least one of materials represented by Chemical Formulas 8-1 to 8-5. In the following Chemical Formulas 8-1 to 8-5, when a chemical bond is not drawn at a position where a chemical bond is to be drawn, it may mean that a hydrocarbon group is bonded to the position.
Synthesis of the copolymer represented by Chemical Formula 8-1 may proceed as in Chemical equation 2 and Synthesis Examples 1 to 3. In the Chemical equation 2 below, when a chemical bond is not drawn at a position where a chemical bond is to be drawn, it may mean that a hydrocarbon group is bonded to the position.
Poly(4-hydroxystyrene-co-methyl methacrylate) 1000 mg, Saccharin 1 mg, 1,3-divinyltetramethyldisilazane (DVS) 210 mg, and tetrahydrofuran 6 cm3 are put into a high-pressure reaction vessel (Seal tube, 25 cm3) to form a mixture. By stirring the mixture at a temperature of 55° C. for 18 hours, a reaction according to Chemical equation 2 proceeds. Thereafter, a solution in the reaction vessel is added dropwise to 120 cm3 of hexane to form a precipitate. By filtering and drying the precipitate, a copolymer represented by Chemical Formula 8-1 (a ratio of “x” to “y” is about 83:17) as a final product is obtained.
Poly(4-hydroxystyrene-co-methyl methacrylate) 1000 mg, Saccharin 3.1 mg, 1,3-divinyltetramethyldisilazane (DVS) 632 mg, and tetrahydrofuran 6 cm3 are put into a high-pressure reaction vessel (Seal tube, 25 cm3) to form a mixture. By stirring the mixture at a temperature of 55° C. for 18 hours, a reaction according to Chemical equation 2 proceeds. Thereafter, a solution in the reaction vessel is added dropwise to 120 cm3 of methanol to form a precipitate. By filtering and drying the precipitate, a copolymer represented by Chemical Formula 8-1 (a ratio of “x” to “y” is about 61:39) as a final product is obtained.
Poly(4-hydroxystyrene-co-methyl methacrylate) 1000 mg, Saccharin 2.1 mg, 1,3-divinyltetramethyldisilazane (DVS) 420 mg, and tetrahydrofuran 6 cm3 are put into a high-pressure reaction vessel (Seal tube, 25 cm3) to form a mixture. By stirring the mixture at a temperature of 55° C. for 18 hours, a reaction according to Chemical equation 2 proceeds. Thereafter, a solution in the reaction vessel is added dropwise to 120 cm3 of hexane to form a precipitate. By filtering and drying the precipitate, the copolymer represented by Chemical Formula 8-1 (a ratio of “x” to “y” is about 33:67) as a final product is obtained.
Synthesis of the copolymer represented by Chemical Formula 8-2 may proceed as illustrated in Chemical equation 3. In the Chemical equation 3 below, when a chemical bond is not drawn at a position where a chemical bond should be drawn, it may mean that a hydrocarbon group is bonded to the position.
In the case of a compound containing a chemical bond between a hetero element and hydrogen, a vinyl functional group may be introduced into a molecular structure of the compound through a substitution reaction using vinyl acetate and a basic reagent as illustrated in Chemical equation 3.
Synthesis of the copolymer represented by Chemical Formula 8-3 may proceed as illustrated in Chemical equation 4. The copolymer represented by Chemical Formula 8-3 may be formed through a general Williamson ether synthesis reaction using allyl bromide or allyl chloride. In the Chemical equation 4, when a chemical bond is not drawn at a position where a chemical bond is to be drawn, it may mean that a hydrocarbon group is bonded to the position.
(In Chemical equation 4, DMF is dimethylformamide.)
Synthesis of the copolymer represented by Chemical Formula 8-4 or Chemical Formula 8-5 may proceed as illustrated in Chemical equation 5. In the Chemical equation 5 below, when a chemical bond is not drawn at a position where a chemical bond is to be drawn, it may mean that a hydrocarbon group is bonded to the position.
(In Chemical equation 5, DCM is dichloromethane.)
In the case of a compound containing a chemical bond of a hetero element and hydrogen, as illustrated in Chemical equation 5, an acryl or methacryl functional group may be introduced into a molecular structure of the compound through a substitution reaction using acryloyl chloride or methacryloyl chloride, and a basic reagent.
A Method of Manufacturing a Semiconductor Device Using a Underlayer Composition According to Embodiments of the Inventive Concept is Described.
Referring to
According to some embodiments, the underlayer 110 may include the above-described underlayer composition. Forming the underlayer 110 may include applying the underlayer composition on the lower layer 100. For example, the applying of the underlayer composition may be performed by a spin coating method.
Referring to
Referring back to
The photoresist layer 120 may include a resist composition including a fluorinated alkyl group. The resist composition may include a material represented by Chemical Formula 9-1 or Chemical Formula 9-2.
In Chemical Formulas 9-1 and 9-2, “T” may be at least one selected from the group consisting of tin (Sn), zinc (Zn), lithium (Li), sodium (Na), potassium (K), beryllium (Be), magnesium (Mg), calcium (Ca), barium (Ba), aluminum (Al), silicon (Si), cadmium (Cd), mercury (Hg), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), germanium (Ge), palladium (Pd), platinum (Pt), lead (Pb), strontium (Sr), and manganese (Mn), “Rf” which is a fluorinated alkyl group, and may have a structure of —(CH2)p(CF2)qCF3. Here, “p” is an integer from 0 to 10 or 0 to 3, and “q” is an integer from 0 to 10, 2 to 9, or 0 to 5. In some embodiments, “q” may be greater than or equal to 2 times “p”. For example, “Rf” may have a structure of —(CH2)2(CF2)5CF3.
In Chemical Formula 9-2, “Rx” may have a structure of, for example, CF3(CF2)2—O—CFCF3CF2—O—CFCF3COO—.
Forming the photoresist layer 120 may include applying the resist composition on the underlayer 110. The applying of the resist composition may include coating (e.g., spin coating) the resist composition on the underlayer 110 using a fluorine-based solvent (e.g., hydrofluoroether (HFE) and/or perfluorocarbon (PFC)). The forming of the photoresist layer 120 may further include performing a heat treatment process (e.g., a soft baking process) on the applied resist composition.
According to embodiments of the inventive concept, the underlayer composition may not include a fluorine atom, and thus may not have solubility in the fluorine-based solvent. Accordingly, during the forming of the photoresist layer 120 using the fluorine-based solvent, damage to the underlayer 110 may be prevented.
Referring to
Cross-linking of the fluorinated alkyl groups (Rf) of the resist composition may be achieved by irradiation of the light 140, and thus the materials represented by Chemical Formula 9-1 or Chemical Formula 9-2 may combine with each other. As a result, the first portion 122 of the photoresist layer 120 may have a chemical structure in which the fluorinated alkyl groups (Rf) are crosslinked with each other, and a chemical structure of the second portion 124 may not change. Accordingly, after the exposure process, a difference in solubility between the first portion 122 and the second portion 124 may occur.
Referring to
Referring to
According to embodiments of the inventive concept, the underlayer composition may not include a fluorine atom, and thus may not have solubility in the fluorine-based solvent. Accordingly, damage to the underlayer 110 may be prevented during the developing process using the fluorine-based solvent. In addition, the underlayer composition may include the vinyl group (—CH═CH2) or the first functional group capable of chemically combining with the fluorinated alkyl group (Rf) of the resist composition. Accordingly, the photoresist pattern 122 may be fixed on the underlayer 110 through chemically combining with the underlayer 110.
According to the inventive concept, the photoresist layer 120 may include the resist composition including the fluorinated alkyl group (Rf), and the underlayer composition may include the vinyl group (—CH═CH2) or the first functional group capable of chemically combining with the fluorinated alkyl group (Rf) of the resist composition. By cross-linking of the fluorinated alkyl groups (Rf) of the resist composition during the exposure process, a difference in solubility between the first portion 122 and the second portion 124 of the photoresist layer 120 may occur and the developing process may be performed using the solubility difference. Accordingly, resolution and sensitivity of the photoresist pattern 122 may be improved. In addition, the photoresist pattern 122 may be fixed on the underlayer 110 through chemically combining with the underlayer 110. Accordingly, collapse of the photoresist pattern 122 may be suppressed.
Referring to
A Multi-Layer Structure Formed Using a Underlayer Composition According to Embodiments of the Inventive Concept is Described.
According to some embodiments, a multilayer structure may include the lower layer 100, the underlayer 110, and the photoresist layer 120 described with reference to
According to some embodiments, the multilayer structure may include the lower layer 100, the underlayer 110, and the photoresist layer 120 described with reference to
According to some embodiments, the multilayer structure may include the lower layer 100, the underlayer 110, and the photoresist pattern 122 described with reference to
Referring to
Photoresist layer were formed on a substrate (bare), a substrate coated with hexamethyldisilazane (HMDS), and a substrate coated with 1,3-divinyltetramethyldisilazane (DVS), respectively, and changes in solubility of the photoresist layers by irradiation with electron beam (E-beam) were evaluated. The photoresist layers include the resist composition including the fluorinated alkyl group.
1) Evaluation of Solubility Change of Photoresist Layer on Substrate (Bare)
4% wt/vol of a resist solution dissolved in PF-7600 (3M) was spin-coated on an untreated silicon substrate at 1,250 rpm for 60 seconds, and then heated at 80° C. for 1 minute to form a photoresist thin layer (a thickness of approximately 100 nm). Thereafter, electron beam of 50 μC/cm2 to 1,500 μC/cm2 was irradiated under an acceleration voltage of 80 keV, and then a developing process was performed for 5 seconds using PF-7600. As a result, a negative photoresist pattern having a line-width of 300 nm was formed. Afterwards, a thickness of the photoresist pattern was measured through Alpha-Step®D-300 stylus profiler manufactured by Kla-Tencor. A solubility of the photoresist layer was evaluated using a difference between the thickness of the photoresist thin layer and the thickness of the photoresist pattern.
2) Evaluation of Solubility Change of Photoresist Layer on Substrate Coated with HMDS
20 wt % of a solution prepared by dissolving HMDS in propylene glycol monomethyl ether acetate (PGMEA) was spin-coated on a silicon substrate at 3000 rpm for 30 seconds, and then heated at 110° C. for 1 minute to coat HMDS on the silicon substrate. Thereafter, 4% wt/vol of a resist solution dissolved in PF-7600 (3M) was spin-coated on the silicon substrate coated with HMDS at 1,250 rpm for 60 seconds, and then heated at 80° C. for 1 minute to form a photoresist thin layer (a thickness of approximately 100 nm). Afterwards, electron beam of 50 μC/cm2 to 1,500 μC/cm2 was irradiated under an acceleration voltage of 80 keV, and then a developing process was performed for 5 seconds using PF-7600. As a result, a negative photoresist pattern having a line-width of 300 nm was formed. Afterwards, a thickness of the photoresist pattern was measured through Alpha-Step®D-300 stylus profiler manufactured by Kla-Tencor. A solubility of the photoresist layer was evaluated using a difference between the thickness of the photoresist thin layer and the thickness of the photoresist pattern.
3) Evaluation of Solubility Change of Photoresist Layer on Substrate Coated with DVS
20 wt % of a solution prepared by dissolving DVS in propylene glycol monomethyl ether acetate (PGMEA) was spin-coated on a silicon substrate at 3000 rpm for 30 seconds, and then heated at 110° C. for 1 minute to coat DVS on the silicon substrate. Thereafter, 4% wt/vol of a resist solution dissolved in PF-7600 (3M) was spin-coated on the silicon substrate coated with DVS at 1,250 rpm for 60 seconds, and then heated at 80° C. for 1 minute to form a photoresist thin layer (a thickness of approximately 100 nm). Afterwards, electron beam of 50 μC/cm2 to 1,500 μC/cm2 was irradiated under an acceleration voltage of 80 keV, and then a developing process was performed for 5 seconds using PF-7600. As a result, a negative photoresist pattern having a line-width of 300 nm was formed. Afterwards, a thickness of the photoresist pattern was measured through Alpha-Step®D-300 stylus profiler manufactured by Kla-Tencor. A solubility of the photoresist layer was evaluated using a difference between the thickness of the photoresist thin layer and the thickness of the photoresist pattern.
Photoresist layers were formed on a substrate (bare) and a substrate coated with vinyltrimethoxysilane (VTMS), respectively, and changes in solubility of the photoresist layers with extreme ultraviolet (EUV) irradiation were evaluated. The photoresist layers include the resist composition including the fluorinated alkyl group.
1) Evaluation of Solubility Change of Photoresist Layer on Substrate (Bare)
1.3% wt/vol of a resist solution dissolved in PF-7600 (3M) was spin-coated on an untreated silicon substrate at 1,500 rpm for 60 seconds, and then heated at 80° C. for 1 minute to obtain a photoresist thin layer (a thickness of approximately 25 nm). Thereafter, extreme UV (an exposure amount of 1 mJ/cm2 to 40 mJ/cm2) was irradiated using a MET5 EUV exposure machine owned by Lawrence Berkeley National Laboratory (USA), and then a developing process was performed for 5 seconds using PF-7600. As a result, a negative photoresist pattern was formed. Afterwards, a thickness of the photoresist pattern was measured through Alpha-Step®D-300 stylus profiler manufactured by Kla-Tencor. A solubility of the photoresist layer was evaluated using a difference between the thickness of the photoresist thin layer and the thickness of the photoresist pattern.
2) Evaluation of Solubility Change of Photoresist Layer on Substrate Coated with VTMS
20 wt % of a solution prepared by dissolving VTMS in propylene glycol monomethyl ether acetate (PGMEA) was spin-coated on a silicon substrate at 3000 rpm for 30 seconds, and then heated at 110° C. for 1 minute to coat the VTMS on the silicon substrate. Thereafter, 1.3% wt/vol of a resist solution dissolved in PF-7600 (3M) was spin-coated on the silicon substrate coated with VTMS at 1,500 rpm for 60 seconds, and then heated at 80° C. for 1 minute to form a photoresist thin layer (a thickness of approximately 25 nm). Afterwards, extreme UV (an exposure amount of 1 mJ/cm2 to 40 mJ/cm2) was irradiated using a MET5 EUV exposure machine owned by Lawrence Berkeley National Laboratory (USA), and then a developing process was performed for 5 seconds using PF-7600. As a result, a negative photoresist pattern was formed. Then, a thickness of the photoresist pattern was measured through Alpha-Step®D-300 stylus profiler manufactured by Kla-Tencor. A solubility of the photoresist layer was evaluated using a difference between the thickness of the photoresist thin layer and the thickness of the photoresist pattern.
Photoresist layers were formed on a substrate (bare) and a substrate coated with 1,3-divinyltetramethyldisilazane (DVS), respectively, and changes in solubility of the photoresist layers with extreme ultraviolet (EUV) irradiation were evaluated. The photoresist layers include the resist composition including the fluorinated alkyl group.
1) Evaluation of Solubility Change of Photoresist Layer on Substrate (Bare)
2.5% wt/vol of a resist solution dissolved in HFE-7500 (3M) was spin-coated on an untreated silicon substrate at 1,500 rpm for 60 seconds, and then heated at 80° C. for 1 minute to obtain a photoresist thin layer (a thickness of approximately 25 nm). Thereafter, extreme UV (an exposure dose of 1 mJ/cm2 to 40 mJ/cm2) was irradiated using a MET5 EUV exposure machine owned by Lawrence Berkeley National Laboratory (USA), and then a developing process was performed for 5 seconds using 2-propanol. As a result, a negative photoresist pattern was formed. Afterwards, a thickness of the photoresist pattern was measured through Alpha-Step®D-300 stylus profiler manufactured by Kla-Tencor. A solubility of the photoresist layer was evaluated using a difference between the thickness of the photoresist thin layer and the thickness of the photoresist pattern.
2) Evaluation of Solubility Change of Photoresist Layer on Substrate Coated with DVS
20 wt % of a solution prepared by dissolving DVS in propylene glycol monomethyl ether acetate (PGMEA) was spin-coated on a silicon substrate at 3000 rpm for 30 seconds, and then heated at 110° C. for 1 minute to coat DVS on the silicon substrate. Thereafter, 2.5% wt/vol of a resist solution dissolved in HFE-7500 (3M) was spin-coated on the silicon substrate coated with DVS at 1,500 rpm for 60 seconds, and then heated at 80° C. for 1 minute to form a photoresist thin layer (a thickness of approximately 25 nm). Afterwards, extreme UV (an exposure dose of 1 mJ/cm2 to 40 mJ/cm2) was irradiated using a MET5 EUV exposure machine owned by Lawrence Berkeley National Laboratory (USA), and then a developing process was performed for 5 seconds using 2-propanol. As a result, a negative photoresist pattern was formed. Then, a thickness of the photoresist pattern was measured through Alpha-Step®D-300 stylus profiler manufactured by Kla-Tencor. A solubility of the photoresist layer was evaluated using a difference between the thickness of the photoresist thin layer and the thickness of the photoresist pattern.
Negative photoresist patterns were formed by performing an extreme ultraviolet lithography process on a substrate (X) on which a underlayer was not formed, and a substrate coated with vinyltrimethoxysilane (VTMS), respectively.
1) Forming Photoresist Pattern on Substrate (X) on which Underlayer is not Formed
1.3% wt/vol of a resist solution dissolved in PF-7600 (3M) was spin-coated on an untreated silicon substrate at 1,500 rpm for 60 seconds, and then heated at 80° C. for 1 minute to obtain a photoresist thin layer (a thickness of approximately 25 nm). Thereafter, extreme ultraviolet (an exposure amount of 106.8 mJ/cm2) was irradiated using a MET5 EUV exposure machine owned by Lawrence Berkeley National Laboratory (USA), and then a developing process was performed for 5 seconds using PF-7600. As a result, a negative photoresist pattern was formed.
2) Forming Photoresist Pattern on Substrate Coated with VTMS
20 wt % of a solution prepared by dissolving VTMS in propylene glycol monomethyl ether acetate (PGMEA) was spin-coated on a silicon substrate at 3000 rpm for 30 seconds, and then heated at 110° C. for 1 minute to coat the VTMS on the silicon substrate. Thereafter, 1.3% wt/vol of a resist solution dissolved in PF-7600 (3M) was spin-coated on the silicon substrate coated with VTMS at 1,500 rpm for 60 seconds, and then heated at 80° C. for 1 minute to form a photoresist thin layer (a thickness of approximately 25 nm). Afterwards, extreme ultraviolet (an exposure amount of 106.8 mJ/cm2) irradiated using a MET5 EUV exposure machine owned by Lawrence Berkeley National Laboratory (USA), and then a developing process was performed for 5 seconds using PF-7600. As a result, a negative photoresist pattern was formed.
An extreme ultraviolet lithography process was performed on the substrate (X) on which the underlayer was not formed and the substrate coated with 3-divinyltetramethyldisilazane (DVS) to form negative photoresist patterns, respectively.
1) Forming Photoresist Pattern on Substrate (X) on which Underlayer is not Formed
2.5% wt/vol of a resist solution dissolved in HFE-7500 (3M) was spin-coated on an untreated silicon substrate at 1,500 rpm for 60 seconds, and then heated at 80° C. for 1 minute to obtain a photoresist thin layer (a thickness of approximately 25 nm). Thereafter, extreme UV (exposure dose of 114 mJ/cm2) was irradiated using a MET5 EUV exposure machine owned by Lawrence Berkeley National Laboratory (USA), and then a developing process was performed for 5 seconds using 2-propanol. As a result, a negative photoresist pattern was formed.
2) Forming Photoresist Pattern on Substrate Coated with DVS
20 wt % of a solution prepared by dissolving DVS in propylene glycol monomethyl ether acetate (PGMEA) was spin-coated on a silicon substrate at 3000 rpm for 30 seconds, and then heated at 110° C. for 1 minute to coat DVS on the silicon substrate. Thereafter, 2.5% wt/vol of a resist solution dissolved in HFE-7500 (3M) was spin-coated on the silicon substrate coated with DVS at 1,500 rpm for 60 seconds, and then heated at 80° C. for 1 minute to form a photoresist thin layer (a thickness of approximately 25 nm). Afterwards, extreme UV (an exposure amount of 114 mJ/cm2) was irradiated using a MET5 EUV exposure machine owned by Lawrence Berkeley National Laboratory (USA), and then a developing process was performed for 5 seconds using 2-propanol. As a result, a negative photoresist pattern was formed.
In some embodiments, the underlayer composition may include a copolymer having the first functional group. In
Referring to
Photoresist layers were formed on a substrate (bare), a substrate coated with hexamethyldisilazane (HMDS), a substrate coated with the copolymer (polymer-1) produced according to Synthesis Example 1, and a substrate with the copolymer (polymer-3) produced according to Synthesis Example 3, respectively, and solubility changes of the photoresist layers with electron beam (E-beam) irradiation were evaluated. The photoresist layers include the resist composition including the fluorinated alkyl group.
1) Evaluation of Solubility Change of Photoresist Layer on Substrate (Bare)
4% wt/vol of a resist solution dissolved in PF-7600 (3M) was spin-coated on an untreated silicon substrate at 1,250 rpm for 60 seconds, and then heated at 80° C. for 1 minute to obtain a photoresist thin layer (a thickness of approximately 100 nm). Thereafter, electron beam of 50 μC/cm2 to 1,500 μC/cm2 was irradiated under an acceleration voltage of 80 keV, and a developing process was performed for 5 seconds using PF-7600. As a result, a negative photoresist pattern having a line-width of 300 nm was formed. Afterwards, a thickness of the photoresist pattern was measured through Alpha-Step®D-300 stylus profiler manufactured by Kla-Tencor. A solubility of the photoresist layer was evaluated using a difference between the thickness of the photoresist thin layer and the thickness of the photoresist pattern.
2) Evaluation of Solubility Change of Photoresist Layer on Substrate Coated with HMDS
20 wt % of a solution prepared by dissolving HMDS in propylene glycol monomethyl ether acetate (PGMEA) was spin-coated on a silicon substrate at 3000 rpm for 30 seconds, and then heated at 110° C. for 1 minute to coat HMDS on the silicon substrate. Thereafter, 4% wt/vol of a resist solution dissolved in PF-7600 (3M) was spin-coated on the silicon substrate coated with HMDS at 1,250 rpm for 60 seconds, and then heated at 80° C. for 1 minute to form a photoresist thin layer (a thickness of approximately 100 nm). Then, electron beam of 50 μC/cm2 to 1,500 μC/cm2 was irradiated under an acceleration voltage of 80 keV, and a developing process was performed for 5 seconds using PF-7600. As a result, a negative photoresist pattern having a line-width of 300 nm was formed. Afterwards, a thickness of the photoresist pattern was measured through Alpha-Step®D-300 stylus profiler manufactured by Kla-Tencor. A solubility of the photoresist layer was evaluated using a difference between the thickness of the photoresist thin layer and the thickness of the photoresist pattern.
3) Evaluation of Solubility Change of Photoresist Layer on Substrate Coated with Polymer-1
2.5% wt/vol of a solution prepared by dissolving the copolymer (polymer-1) prepared according to Synthesis Example 1 in propylene glycol monomethyl ether acetate (PGMEA) was spin-coated on a silicon substrate at 2,000 rpm for 60 seconds, and then heated at 110° C. for 1 minute to coat the polymer-1 (a thickness of approximately 45 nm) on the silicon substrate. Thereafter, 4% wt/vol of a resist solution dissolved in PF-7600 (3M) was spin-coated on the silicon substrate coated with the polymer-1 at 1,250 rpm for 60 seconds, and then heated at 80° C. for 1 minute to form a photoresist thin layer (a thickness of about 100 nm). Then, electron beam of 50 μC/cm2 to 1,500 μC/cm2 was irradiated under an acceleration voltage of 80 keV, and a developing process was performed for 5 seconds using PF-7600. As a result, a negative photoresist pattern having a line-width of 300 nm was formed. Afterwards, a thickness of the photoresist pattern was measured through Alpha-Step®D-300 stylus profiler manufactured by Kla-Tencor. A solubility of the photoresist layer was evaluated using a difference between the thickness of the photoresist thin layer and the thickness of the photoresist pattern.
4) Evaluation of Solubility Change of Photoresist Layer on Substrate Coated with Polymer-3
2.5% wt/vol of a solution prepared by dissolving the copolymer (polymer-3) prepared according to Synthesis Example 3 in propylene glycol monomethyl ether acetate (PGMEA) was spin-coated on a silicon substrate at 2,000 rpm for 60 seconds, and then heated at 110° C. for 1 minute to coat the polymer-3 (a thickness of approximately 45 nm) on the silicon substrate. Thereafter, 4% wt/vol of a resist solution dissolved in PF-7600 (3M) was spin-coated on the substrate coated with polymer-3 at 1,250 rpm for 60 seconds, and then heated at 80° C. for 1 minute to form a photoresist thin layer (a thickness of about 100 nm). Then, electron beam of 50 μC/cm2 to 1,500 μC/cm2 was irradiated under an acceleration voltage of 80 keV, and a developing process was performed for 5 seconds using PF-7600. As a result, a negative photoresist pattern having a line-width of 300 nm was formed. Afterwards, a thickness of the photoresist pattern was measured through Alpha-Step®D-300 stylus profiler manufactured by Kla-Tencor. A solubility of the photoresist layer was evaluated using a difference between the thickness of the photoresist thin layer and the thickness of the photoresist pattern.
According to the inventive concept, the resist composition of the photoresist layer may include the fluorinated alkyl group, and the underlayer composition of the underlayer may include the vinyl group (—CH═CH2) or the first functional group capable of chemically combining with the fluorinated radical formed when the fluorinated alkyl group of the resist composition is exposed to the electron beam or extreme ultraviolet. Due to the cross-linking of the fluorinated alkyl groups of the resist composition during the exposure process, the photoresist layer may include the first portion and the second portion having different solubility, and the developing process of the photoresist layer may be performed using the difference in the solubility. Accordingly, the resolution and sensitivity of the photoresist pattern may be improved. In addition, the photoresist pattern may be fixed on the underlayer through the chemically combining with the underlayer. Accordingly, the collapse of the photoresist pattern may be suppressed.
The above description of embodiments of the inventive concept provides an example for explaining the inventive concept. Therefore, the technical spirit of the inventive concept is not limited to the above-described embodiments, but it is clear that various modifications and changes may be made by those skilled in the art within the technical scope of the inventive concept.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2022-0087787 | Jul 2022 | KR | national |
