Vapor phase deposition apparatus and support table

Abstract

A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a conceptual diagram showing a configuration of an epitaxial growth apparatus according to a first embodiment;

FIG. 2 is a view showing an example of the appearance of an epitaxial growth apparatus system;

FIG. 3 is a diagram showing an example of a unit configuration of the epitaxial growth apparatus system;

FIG. 4 is a sectional view showing an example of a state in which a silicon waver is supported by a holder;

FIG. 5 is a sectional view showing another example of the state in which a silicon wafer is supported by a holder;

FIG. 6 is a sectional view showing still another example of the state in which a silicon wafer is supported by a holder;

FIG. 7 is a conceptual diagram showing a configuration of an epitaxial growth apparatus according to a second embodiment;

FIG. 8 is a conceptual view showing a sectional configuration of a notched holder according to the second embodiment;

FIG. 9 is a conceptual top view of the holder shown in FIG. 8;

FIG. 10 is a conceptual view showing a sectional configuration of another notched holder according to the second embodiment;

FIG. 11 is a conceptual top view of the holder shown in FIG. 10;

FIG. 12 is a conceptual diagram showing a configuration of an epitaxial growth apparatus according to a third embodiment;

FIG. 13 is a conceptual view showing a sectional configuration of a notched holder according to the third embodiment;

FIG. 14 is a conceptual top view of the holder shown in FIG. 13;

FIG. 15 is a conceptual view showing a sectional configuration of another notched holder according to the third embodiment;

FIG. 16 is a conceptual top view of the holder shown in FIG. 15;

FIG. 17 is a conceptual view showing a sectional configuration of an example of a holder according to a fourth embodiment;

FIG. 18 is a conceptual view showing a sectional configuration of an example of a holder according to a fifth embodiment;

FIG. 19 is a conceptual view showing another example of a holder according to a sixth embodiment when the holder is viewed from the above;

FIG. 20 is a conceptual view showing a sectional structure of the holder shown in FIG. 19;

FIG. 21 is a conceptual view showing still another example of the holder according to the sixth embodiment;

FIG. 22 is a conceptual view showing a sectional configuration of the holder shown in FIG. 21;

FIG. 23 is a conceptual view showing another example of a sectional configuration of the holder;

FIG. 24 is a conceptual view showing another example of a sectional configuration of the holder;

FIG. 25 is a top view showing an example of a state in which a silicon wafer is supported by a holder; and

FIG. 26 is a sectional view showing a section in the state in which the silicon wafer is supported by the holder shown in FIG. 25.

Claims

1. A vapor phase deposition apparatus comprising: a chamber;a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit;a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate;a first flow path configured to supply a gas to form a film into the chamber; anda second flow path configured to exhaust the gas from the chamber.

2. The vapor phase deposition apparatus according to claim 1, wherein a material of the first support unit uses a material having a heat conductivity higher than that of a material used in the second support unit.

3. The vapor phase deposition apparatus according to claim 2, wherein silicon carbide (SiC) is used as a material of the first support unit.

4. The vapor phase deposition apparatus according to claim 3, wherein silicon nitride (Si3N4) is used as a material of the second support unit.

5. The vapor phase deposition apparatus according to claim 2, wherein a notched portion is formed on at least one upper surface side of the first support unit and the second support unit at a position which the first support unit and the second support unit are connected to each other.

6. The vapor phase deposition apparatus according to claim 2, wherein a notched portion is formed in the first support unit.

7. The vapor phase deposition apparatus according to claim 6, wherein the notched portion is formed in a surface being in contact with the back side surface of the substrate.

8. The vapor phase deposition apparatus according to claim 1, wherein a notched portion is formed in the first support unit.

9. The vapor phase deposition apparatus according to claim 8, wherein the notched portion is formed in a surface being in contact with the back side surface of the substrate.

10. The vapor phase deposition apparatus according to claim 1, wherein the first support unit has an annular projecting portion extending on the back side at an outer peripheral portion, andthe second support unit has an opening formed on an inner peripheral side, is in contact with a distal end portion of the projecting portion on a bottom surface of the opening to support the first support unit.

11. The vapor phase deposition apparatus according to claim 1, wherein the first support unit has a plurality of projecting portions formed on a back surface;the second support unit has an opening formed on an inner peripheral side, is in contact with a distal end portion of the projecting portion on a bottom surface of the opening to support the first support unit.

12. The vapor phase deposition apparatus according to claim 11, wherein the first support unit further has a plurality of second projecting portions which are in contact with a side surface of the opening when the first support unit substantially moves in a horizontal direction and which extends to an outer peripheral side.

13. The vapor phase deposition apparatus according to claim 11, wherein the second support unit has a plurality of second projecting portions which are in contact with a side surface of the first support unit when the first support unit substantially moves in a horizontal direction and which extend to an inner peripheral side.

14. The vapor phase deposition apparatus according to claim 1, wherein the second support unit has an opening formed on an inner peripheral side and a plurality of projecting portions formed on a bottom surface of the opening, and is in contact with a back surface of the first support unit at a distal end portion of the projecting portion to support the first support unit.

15. The vapor phase deposition apparatus according to claim 14, wherein the first support unit has a plurality of second projecting portions which are in contact with a side surface of the opening when the first support unit substantially moves in a horizontal direction and which extend to an outer peripheral side.

16. The vapor phase deposition apparatus according to claim 14, wherein the second support unit has a plurality of second projecting portions which are in contact with a side surface of the first support unit when the first support unit substantially moves in a horizontal direction and which extend to an inner peripheral side.

17. The vapor phase deposition apparatus according to claim 1, wherein the first and second support units are formed as physically different parts, and the first support unit is placed on a part of the second support unit.

18. A vapor phase deposition apparatus comprising: a chamber;a support table arranged in the chamber and formed a first opening which a substrate is placed on its bottom surface, and a second opening what is an annular opening and is located on an outer peripheral side of the first opening and inside an outer peripheral side;a heat source arranged at a position having a distance from the back side surface of the substrate, the distance being larger than a distance between the substrate and the support table, and which heats the substrate;a first flow path configured to supply a gas to form a film into the chamber; anda second flow path configured to exhaust the gas from the chamber.

19. The vapor phase deposition apparatus according to claim 18, wherein a thickness of a portion of the support table where the second opening is formed is smaller than a thickness of an inner portion of the second opening.

20. A support table for placing a substrate thereon in a chamber held in a vapor phase deposition apparatus, comprising: a first support unit being in contact with the substrate; anda second support portion connected to the first support portion and made of a material having a heat conductivity lower than that of a material used in the first support unit.