Number | Name | Date | Kind |
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5650972 | Tomishima et al. | Jul 1997 | A |
6243308 | Lin | Jun 2001 | B1 |
Entry |
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Wuensche, et al. “A 110nm 512 Mb DDR with Vertical Transistor Trench Cell,” 2002 Symposium on VLSI Circuits, Digest of Technical Papers, Jun. 13-15, 2002, pp. 114-115. |