Wafer holder, and heater unit and wafer prober provided therewith

Abstract

A wafer holder with which probing can be performed with little or virtually no noise due to the wafer being shielded from electromagnetic waves; and a wafer prober on which the wafer holder is mounted. The wafer holder of the present invention includes a chuck top for mounting a wafer, and a resistance heat generator for heating the chuck top. At least part of the resistance heat generator is covered by an insulating layer, and an electrically conductive layer is present on an opposite side of the resistance heat generator having the insulating layer. The electrically conductive layer blocks electromagnetic waves that adversely affect inspection. The insulating layer preferably covers the entire surface of the resistance heat generator, and the electrically conductive layer preferably covers the entire surface of the resistance heat generator comprising the insulating layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an example of a cross-sectional structure of the wafer holder of the present invention;

FIG. 2 shows an example of a cross-sectional structure of the heat generator of the present invention;

FIG. 3 shows an example of a cross-sectional structure of the chuck top of the present invention; and

FIG. 4 shows another example of a cross-sectional structure of the wafer holder of the present invention.

Claims

1. A wafer holder comprising: a chuck top configured and arranged to mount a wafer;a resistance heat generator configured and arranged to heat the chuck top;an insulating layer covering at least part of the resistance heat generator; andan electrically conductive layer formed on the insulating layer.

2. The wafer holder according to claim 1, wherein the insulating layer covers the entire surface of the resistance heat generator, andthe electrically conductive layer covers the entire surface of the insulating layer covering the resistance heat generator.

3. The wafer holder according to claim 1, wherein the electrically conductive layer is mainly composed of iron or nickel.

4. The wafer holder according to claim 1, wherein the electrically conductive layer is composed of at least iron and nickel with the total amount of iron and nickel contained in the electrically conductive layer being 90 wt % or greater.

5. A heater unit comprising the wafer holder according to claim 1.

6. A wafer prober comprising the heater unit according to claim 5.