Wafer level package for image sensor components and fabricating method thereof

Abstract

A wafer level package for image sensor components includes an image sensor chip and several metal pillars. Several vias formed in the image sensor chip are aligned with several bonding pads. The metal pillars are formed in the vias. First ends of the metal pillars are bonded to the bonding pads. Second ends of the metal pillars protrude from a back surface of the image sensor chip. The length of the metal pillars is greater than the thickness of the image sensor chip. The image sensor chip is mounted to a printed circuit board through the metal pillars formed in the vias instead of wire bonding or redistribution line (RDL) process. There is no need to dispensing underfil between the image sensor chip and the printed circuit board to protect the metal pillars.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 (Prior Art) is a cross-sectional view of a conventional wafer level package for image sensor components;

FIG. 2 is a cross-sectional view of a wafer level package for image sensor components according to a preferred embodiment of the invention;

FIG. 3 is a cross-sectional view of the wafer level package mounted on a printed circuit board according to the preferred embodiment of the invention; and

FIGS. 4A˜4H are cross-sectional views of a fabricating method of the wafer level package for image sensor components according to the preferred embodiment of the invention.

Claims

1. A wafer level package for image sensor components, the package comprising: an image sensor chip having an active surface, a back surface and a plurality of vias, the active surface comprising an image sensor area and a plurality of bonding pads, the vias aligned with the bonding pads; anda plurality of metal pillars formed in the vias, first ends of the metal pillars bonded to the bonding pads, second ends of the metal pillars protruding from the back surface of the image sensor chip, and the length of the metal pillars being greater than the thickness of the image sensor chip.

2. The package according to claim 1 further comprising a glass sheet disposed on the active surface.

3. The package according to claim 2, further comprising a transparent epoxy resin formed on the active surface to fix the glass sheet on the active surface.

4. The package according to claim 3, further comprising a transparent protective layer formed between the epoxy resin and the active surface to protect the image sensor area on the active surface.

5. The package according to claim 2, further comprising a transparent protective layer formed on the active surface to protect the image sensor area on the active surface.

6. The package according to claim 5, further comprising a transparent epoxy resin formed on the protective layer of the active surface to fix the glass sheet thereon.

7. The package according to claim 1, wherein the metal pillars are electroplated copper

8. The package according to claim 1, further comprising insulation layers formed on inner walls of the vias.

9. The package according to claim 1, wherein the length of the second ends protruding from the back surface is substantially between 5 μm and 10 μm.

10. The package according to claim 1, wherein the vias are formed in the image sensor chip and surrounding the image sensor area on the active surface.

11. The package according to claim 1, wherein the area of the bonding pads are greater than the area of the openings of the vias.

12. The package according to claim 1, wherein the metal pillars are made of single metal.