The present application claims the benefit of foreign priority to Japanese Patent Application No. 2012-247493 filed on Nov. 9, 2012, the contents of which are incorporated herein by reference.
1. Technical Field
The technical field relates to a wafer separating apparatus for separating wafers bonded to a slicing base with an adhesive and a wafer separating method.
2. Background Art
Wafers, such as silicon wafers, are obtained by slicing a bulk material called an ingot into wafer slices. For obtaining wafers, an ingot is first fixed to a support material called a slicing base through an adhesive. The ingot fixed to the slicing base is sliced using a wire saw into wafers. Then, the wafers are separated from the slicing base to obtain individual wafers.
As shown in
In another method, for separating wafers from a slicing base, applying hot air to an adhesive which bonds the wafers has been described (Japanese Utility Model Registration No. 3149712).
However, as shown in
Further, when hot air is applied to the adhesive to dissolve the adhesive as described in Japanese Utility Model Registration No. 3149712, the resultant contaminants stick to the wafers and are difficult to remove.
Accordingly, an object, of this disclosure is to facilitate separation of the wafers from the slicing base and to cause the process of separation of the wafers through the subsequent step without requiring manual operation, thereby enabling the process to be automated.
Specifically, present embodiments are directed to a wafer separating apparatus and a wafer separating method described below.
A wafer separating apparatus, according to various embodiments, can separate a plurality of wafers bonded to a slicing base with an adhesive from the slicing base. The wafer separating apparatus includes: a water tank configured to store therein water; a retainer configured to retain the slicing base having the wafers bonded thereto when the wafers are immersed in water in the water tank; a first nozzle configured to apply a jet of water to a side of a wafer of the wafers immersed in the wafer in the wafer tank; and a tray configured to contain a wafer separated from the slicing base, wherein, the tray is disposed inside the water tank.
A wafer separating method, according to various embodiment, can separate a plurality of wafers bonded to a slicing base with an adhesive from the slicing base. The method comprises: providing a slicing base having a plurality of wafers bonded thereto with an adhesive; immersing the wafers bonded to the slicing base in water in a water tank; applying a jet of water to a side of a wafer of the wafers immersed in the water in the water tank; and receiving the wafer separated from the slicing base in a tray disposed inside the water tank.
By the use of the wafer separating apparatus of the embodiment, not only can wafers be easily separated from the slicing base, but also the separated wafers can be arranged in an orderly row in the tray, so that the process of separation of the wafers through the subsequent step can be automated without manual operation.
In the drawings:
Reference will now be made in detail to the accompanying drawings. Wherever possible, the same reference numerals will be used throughout the drawings to refer to the same or like parts. It should be understood that the user of relational terms such as first and second are used solely to distinguish one from another entity, item, or action without necessarily requiring or implying any actual such relationship or order between such entities, items or actions.
A wafer separating method of the present embodiment can be one step in a method for producing a wafer. An exemplary flow of the method for producing a wafer is shown in
A semiconductor bulk material called an ingot 65 is bonded to a slicing base with an adhesive 63 (see
The adhesive 63 for bonding the ingot 65 to the slicing base 50 is preferably a one-component adhesive or a two-component adhesive, and can be, for example, an epoxy adhesive. With respect to the material for the slicing base 50, there is no particular limitation, and the material for the slicing base may be a conductive material, such as a carbon material, an insulating inorganic material, such as glass, or an organic material, such as an epoxy resin. The slicing base 50 may be constructed of a porous material. Examples of materials constituting the porous material include a carbon material. The ingot can be strongly bonded to the wafer bonded surface of the slicing base 50 made of a porous material due to an anchor effect. Therefore, the bond strength between the slicing base 50 and the adhesive 63 is stronger than the bond strength between, the ingot 65 and the adhesive 63. Consequently, when the wafers 60 obtained by slicing the ingot 65 are separated from, the slicing base, the adhesive 63 remains on the slicing base 50 and is advantageously unlikely to transfer to the wafers 60.
As shown in
As shown in
Next, as shown in
The wafer separating method of the embodiment is described in detail later, but can be conducted using a wafer separating apparatus (see numeral 100 in
Next, as shown in
Further, as shown in
2. With Respect to the Wafer Separating Method
The above-mentioned wafer separating method is a method for separating a plurality of wafers fixed to a slicing base, using a wafer separating apparatus, from the slicing base (see
The wafer separating method includes the first embodiment in which, in the step (1), the adhesive which bonds the wafers to the slicing base is not immersed in water in the water tank and only the wafers are immersed in water (see
In the separating method according to the first embodiment, the adhesive 63 which bonds the wafers 60 to the slicing base 50 is not immersed in water in the water tank 10 and only the wafers 60 are immersed in water (
The wafer separating apparatus 100 has a water tank 10 configured to store therein water; a retainer 20 configured to retain a slicing base 50 having a plurality of wafers 60 bonded thereto through an adhesive 63 so that a part of the wafers is immersed in water in the water tank; a first nozzle 30 configured to apply, to a side of the wafer immersed in the water in the water tank, a jet of water from the water in the water tank; a tray 40 configured to contain the wafer separated from the slicing base, wherein the tray 40 is disposed inside the water tank; and a steam nozzle 80 configured to apply steam to the adhesive 63 which bonds the wafers 60 to the slicing base 50.
The water tank 10 can store therein water or water containing a chemical substance (aqueous solution). In the first embodiment, it is preferred that the water tank 10 stores therein water.
The retainer 20 retains the slicing base 50 having the wafers 60 bonded thereto. The slicing base 50 retained by the retainer 20 is a plate-form member for fixing thereto the wafers 60.
The wafers 60 bonded to the slicing base 50 are generally semiconductor wafers, preferably silicon wafers. The wafers 60 are bonded to the wafer bonded surface of the slicing base 50 through an adhesive. Further, the wafers 60 fixed to the slicing base 50 are arranged so that the principal surfaces of the individual wafers are parallel to each other.
As shown in
It is preferred, that the retainer 20 retains the slicing base 50 so that the wafer bonded surface 55 of the slicing base 50 slopes at an angle to the surface of the water in the water-tank 10. Specifically the direction of the arranged wafers 60 slopes at the angle to the surface of the wafer in the water tank 10. More specifically, it is preferred that the retainer 20 retains the slicing base 50 so that the wafer to be first separated (see
The first nozzle 30 applies a jet of water to the sides of the wafers 60 which are bonded to the slicing base 50 retained by the retainer 20 and which are immersed in the water. The water applied in the jet can be water stored in the water tank 10. The jet of water causes gaps between the wafers 60 bonded to the slicing base 50 (or enlarges the gaps). It is preferred that the direction of the jet of water applied by the first nozzle 30 is parallel to the wafer bonded surface 55 of the slicing base 50 or parallel to the surface of the water in the water tank 10. When the direction of the jet of water applied by the first nozzle 30 is perpendicular to the wafer bonded surface 55 of the slicing base 50, gaps can be caused between the wafers, but the gaps are not stabilized, making it difficult to control the direction of the wafers to be separated.
It is preferred that the first nozzle 30 applies the jet of water to the side of the wafer to be first separated, namely, the side of the wafer positioned at the end of the wafers 60 arranged in an orderly row. In this case, the wafers 60 can foe separated from the slicing base 50 successively from the wafer positioned at the end.
The wafer separating apparatus 100 may have, in addition to the first nozzle 30, a first auxiliary nozzle 33 configured to apply a jet of water to sides of the wafers 60. The first auxiliary nozzle 33 does not apply a jet of water to the wafer positioned at the end but to the sides of the wafers 60 positioned near, e.g. next to, the wafer at the end. The jet of water applied by the first nozzle 30 and the jet of water applied by the first auxiliary nozzle 33 more efficiently cause gaps between the wafers to be separated (or enlarges the gaps).
The tray 40 is disposed in the water in the water tank 10. The wafers 60 separated from the slicing base 50 are successively received in the tray 40.
As shown in
As shown in
The wafer separating apparatus 100 may further have, in the water tank 10, a second nozzle 70 configured to apply a jet of water to the principal surface of the wafer separated from the slicing base 50′. The jet of water applied by the second nozzle 70 not only introduces the separated wafers 60 into the tray 40 but also keeps the wafers contained in the tray 40.
The separating apparatus 100 (see
That is, the steam nozzle 80 applies steam to the adhesive 63 which bonds the wafers to which the first nozzle 30 applies the jet of water. The steam nozzle 80 applies to the adhesive 63 steam in the direction indicated by an arrow 81 shown in
As shown in
The first nozzle 30 is arranged so as to apply the jet of water to the side of the wafer positioned at the end of the wafers 60 bonded to the slicing base 50. Further, the first auxiliary nozzle 33 is arranged so as to apply the jet of water to the sides of the other wafers positioned near the wafer at the end. The third nozzle 35 is arranged so as to apply a jet of water to a side of a wafer 60′ when a wafer at the end of wafers 60 has tilted to become the wafer 60′ in the vertical direction. The jet of water applied by the third nozzle 35 keeps the wafer 60′ in a prescribed direction.
As shown in
With respect to the amount of water discharged from each of the first nozzle 30 and the first auxiliary nozzle 33, for example, each amount is 1.4 to 1.6 L/minute.
The steam nozzle 80 applies steam to the adhesive 63, and further the first nozzle 30 applies the jet of water to the side of the wafer, so that, as shown in
Further, as shown in
The slicing base 50 may be moved while separating the wafers 60 from, the slicing base 50 successively. Specifically, it is preferred that the slicing base 50 is moved so that the jet of water applied by the first nozzle 30 is positioned around the side of the wafer to be separated. In other words, it is preferred that the slicing base 50 is allowed to slowly sink through the water in the direction of the arranged wafers 60.
Further, the tray 40 may be moved while separating the wafers 60 from the slicing base 50 successively. Specifically, it is preferred that the tray 40 is moved so as to be synchronized with the movement of the slicing base 50 (in the same direction as the direction of movement of the slicing base 50). In this case, the relative position between the wafer to be separated and the position of the tray 40 for receiving the wafer can be kept constant. It is preferred that the movement of the tray 40 is smaller than the movement of the slicing base 50. In this case, gaps are present between the wafers 60 bonded on the slicing base 50 but the fallen wafers 60 can be arranged in an orderly row without any gap in the tray 40.
In the separating method according to the second embodiment, the wafers 60 as well as the adhesive 63 which bonds the wafers 60 to the slicing base 50 are immersed in water in the water tank 10 (
Like the wafer separating apparatus 100 (see
In the wafer separating apparatus 100′, it is preferred that the water stored in the water tank 10 contains a chemical substance capable of dissolving the adhesive 63. Examples of chemical substances capable of dissolving the adhesive 63 include lactic acid. In addition, in the wafer separating apparatus 100′, the water stored in the water tank 10 may be warm water.
The wafer separating apparatus 100′ has substantially the same construction as that of the wafer separating apparatus 100 except that 1) the retainer 20 immerses both the wafers 60 and the adhesive 63, which bonds the wafers 60 to the slicing base 50, in the water in the water tank 10, that 2) the apparatus may have no steam nozzle 80, and that 3) the water in the water tank 10 contains the chemical substance.
Then, as shown in
As a result, as shown in
As shown in
A method for placing the wafers in a cassette according to an exemplary embodiment will be discussed. A plurality of wafers 60 arranged in an orderly row in the tray 40 are removed from the fray 40 and placed in a cassette 400 (see FIG. 2E).
As described hereinabove, by the present embodiments, the process of separation of the wafers through the subsequent step (for example, a step for placing the wafers in a cassette) in the method for producing a wafer can be automated without a manual operation.
Among the above-mentioned various embodiments and modified examples, arbitrary embodiments or modified examples can be appropriately selected and combined to achieve their respective effects.
Number | Date | Country | Kind |
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2012-247498 | Nov 2012 | JP | national |
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Number | Date | Country | |
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20140130986 A1 | May 2014 | US |