Patent Application
20070277861
For the purpose of illustrating the invention, there are shown in the drawings several forms which are presently preferred, it being understood, however, that the invention is not limited to the precise arrangement and instrumentalities shown.
Embodiment 1 of this invention will be described hereinafter with reference to the drawings.
<Outline of Treatment>
First, an outline of this embodiment will be described with reference to
Assume that a plurality of wafers W to be treated have varied thicknesses in the range of 195 μm to 212 μm, and that a predetermined number (e.g. 50) of such wafers W are stored in each cassette C. That is, the variation in the thickness of all the wafers W at this stage is 17 μm.
First, the wafers W are successively taken out of each cassette C, and their thicknesses are measured. The wafers W are sorted into groups according to predetermined ranges of thickness. A plurality of wafers W in each group are stored in the same cassette C. The predetermined ranges are 195-200 μm, 201-206 μm and 207-212 μm, for example, each covering a 5 μm variation in thickness.
Each cassette C storing the wafers W grouped as described above is immersed for treatment in a treating solution such as of caustic potash (KOH), for example. The time of immersion in the treating solution is varied for each cassette C. Assume, for example, that the first cassette C stores wafers W having thicknesses in the predetermined range of 105-200 μm, the second cassette C stores wafers W having thicknesses in the predetermined range of 201-206 μm, and the third cassette C stores wafers W having thicknesses in the predetermined range of 207-212 μm. In this case, immersion times may be set based on a “target thickness” which is a thickness of wafers W resulting from the thinning treatment, an “average thickness” within each group, and a “treating rate” of the treating solution. For example, the first cassette C contains wafers W having an average thickness of 197.5 μm, the second cassette C wafers W having an average thickness of 203.5 μm, and the third cassette C wafers W having an average thickness of 209.5 μm. Provided that the target thickness and treating rate are unvaried, a longer immersion time is set for the third cassette C than for the first cassette C.
Thus, each cassette C stores only those wafers W having thicknesses in a predetermined range among the plurality of wafers W. The variations in the thickness of the plurality of wafers W in each cassette C fall within the predetermined range of 5 μm. Therefore, the thinning treatment with the treating solution chemically etching the plurality of wafers W can provide reduced variations in finishing thickness of the plurality of wafers W.
<Wafer Treating System>
Next, a specific wafer treating system for performing the above treatment will be described with reference to
As shown in
The grouping apparatus 3 has a thickness measuring unit 9 and a storing unit 11.
The storing unit 11 receives, as placed thereon, cassettes C containing wafers W before the thinning treatment and after the thinning treatment. In the case of a cassette C containing wafers W before the thinning treatment, each wafer W is taken out and transported to the thickness measuring unit 9 where the thickness of wafer W is measured. According to the thickness, the wafer W is stored in a different cassette C corresponding to a group of thicknesses in a predetermined range. In this way, a plurality of wafers W are grouped according to thickness. In the case of a cassette C containing wafers W after the thinning treatment, each wafer W is taken out and transported to the thickness measuring unit 9 where the thickness of thinned wafer W is measured. A difference to the target thickness is collected as data.
The thickness measuring unit 9 corresponds to the measuring device in this invention. The storing unit 11 corresponds to the storing device in this invention.
As shown in
A lamp house 25 for generating visible light is connected through optical fibers to the visible microscope 17 and incident-light microscope 21 of the optical thickness measuring device 13. Further, a monitor 27 is connected for displaying stereoscopic images from a camera of each of the visible microscope 17 and incident-light microscope 21. A power source and controller 29 has functions to supply electric power and control the optical thickness measuring device 13, and receive near-infrared light intensity signals from the near-infrared spectrograph 23. A data processor 31 is connected to the power source and controller 29. When the wafer W has not undergone the thinning treatment yet, the data processor 31 derives the thickness of wafer W from the near-infrared light intensity and, based on the thickness, instructs the storing unit 11 in which cassette C the wafer W should be stored. When the wafer W has undergone the thinning treatment, the data processor 31 obtains the thickness of wafer W, stores it as finishing thickness, and determines the quality of treatment based on a difference to the target thickness.
An edge protection jig 33 as shown in
This edge protection jig 33 covers the entire area of a circuit-forming surface S1 of the wafer W, the peripheral surface thereof, and a reverse surface S2 of the wafer W excluding a central area in a circle CR to be treated. That is, the jig 33 covers the reverse surface S2 of the wafer W to the extent of a predetermined width from the peripheral surface toward the center. The jig 33 serves to keep the covered portions of the wafer W out of contact with the treating solution.
Specifically, the jig 33 includes a base member 35 slightly larger in diameter than the wafer W, and a seal ring 37 placed from above the base member 35 to hold the wafer W in between. The base member 35 has a shallow recess 39 formed centrally thereof to fit the outer shape of the wafer W and correspond to the thickness of the wafer W. The wafer W is placed in the shallow recess 39 with the circuit-forming surface S1 facing the bottom of the recess 39. The seal ring 37 has a lip packing 40 disposed on the lower surface thereof to mark the treatment circle CR to be exposed to the treating solution on the surface S2 to be treated. Further, the seal ring 37 has a valve 41 disposed in a position on the upper surface thereof and communicating with a decompression space in the lip packing 40. The valve 41 includes a check valve and a vacuum breaker, and communicates with a suction device not shown. The valve 41 can maintain the decompression space in the lip packing 40 at negative pressure after suction is canceled. Consequently, only by placing the wafer W in the base member 35, placing the seal ring 37 from above, and causing the suction device to take sucking action, the seal ring 37 is held tight with the base member 35 after the suction is canceled. After thinning treatment of the wafer W is completed, the vacuum breaker of the valve 41 is operated to cancel the negative pressure of the decompression space in the lip packing 40. Then, the seal ring 37 can be released from the base member 35.
The “lip packing” refers to the type of packing in which, when a fluid is pressurized, a pressure greater than the fluid pressure acts on the lip tip of the packing to make pressure contact with a surface, and the pressure contact is maintained by self-sealing action. Such lip packing includes U-packing, V-packing, L-packing and J-packing, which are also called dust seals or scrapers.
An edge protection jig attaching and detaching apparatus 5 shown in
The edge protection jig attaching and detaching apparatus 5, which corresponds to the edge holding jig attaching apparatus and edge holding jig detaching apparatus in this invention, includes a support table 43 for receiving, as placed thereon, cassettes C storing wafers W to undergo the thinning treatment, a support table 45 for receiving, as placed thereon, cassettes C storing only the base members 35 of edge protection jigs 33, a first transport arm 47 movable along the tables 43 and 45, an attaching unit 49 for attaching the edge protection jigs 33 to the wafers W, a detaching unit 51 disposed adjacent the attaching unit 49 for detaching the edge protection jigs 33 from the wafers W after the thinning treatment, and a storage unit 53 disposed adjacent the attaching unit 49 and detaching unit 51 and having a region for storing only the seal rings 47 and a region for storing the edge protection jigs 33.
A support table 55 is disposed adjacent the attaching unit 49 for receiving a cassette C storing wafers W with edge protection jigs 33 attached thereto. This cassette C is transported to the wafer thinning apparatus 7.
A support table 57 is disposed adjacent the detaching unit 51 for receiving a cassette C storing wafers W (with edge protection jigs 33 attached thereto) after the thinning treatment. This cassette C is transported from the wafer thinning apparatus 7. A support table 59 is disposed adjacent the support table 57 for receiving a cassette C storing wafers W after edge protection jigs 33 are detached therefrom.
The attaching unit 49 noted above includes a stacking table 61 for receiving a base member 35 transported from a cassette C on the support table 45 by the first transport arm 47, and allowing a wafer W transported from a cassette C on the support table 43 by the first transport arm 47 to be placed on the base member 35. A joining table 63 is disposed adjacent the storage unit 53 as seen from the stacking table 61. The joining table 63 receives the base member 35 with the wafer W placed thereon, horizontally adjusts a seal ring 37 placed on the wafer W, and allows the wafer W and edge protection jig 33 to be integrated by suction through the valve 41 (
The seal rings 37 in the storage unit 53 are transported to the joining table 63 by a fourth transport arm 71 disposed adjacent the attaching unit 49 and detaching unit 51. The storage unit 53 also receives seal rings 37 and base members 35 (edge protection jigs 33) detached from wafers W in the detaching unit 51, and transported by the fourth transport arm 71.
The detaching unit 51 includes a temporary support 73 disposed adjacent the support table 57. A cassette C storing wafers W after the thinning treatment (with edge protection jigs 33) is placed on the support table 57, and is transferred to the temporary support 73 as turned from the vertical position to the horizontal position. The detaching unit 51 includes a separating table 75 disposed adjacent the storage unit 53 and attaching unit 49. The separating table 75 cancels the negative pressure in the lip packing 40 through the valve 41 of the seal ring 37 attached to each wafer W to render the seal ring 37 releasable from the base member 35 and wafer W A fifth transport arm 77 is disposed between the separating table 75 and support table 59. The fifth transport arm 77 takes wafers W (with edge protection jigs 33) out of the cassette C on the temporary table 73, and transports the wafers W to the separating table 75. After each seal ring 37 separated on the separating table 75 is transported to the storage unit 53 by the fourth transport arm 71, the fifth transport arm 77 transports only the wafer W to a cassette C on the support table 59. The base member 35 left on the separating table 75 is transported to the storage unit 53 by the fourth transport arm 71.
Next, the wafer thinning apparatus 7 will be described with reference to
The wafer thinning apparatus 7 includes a support table 79 for receiving, as placed thereon, cassettes C each storing a plurality of wafers W in the same one of groups formed for the predetermined ranges of thickness, with edge protection jigs 33 attached by the edge protection jig attaching and detaching apparatus 5, a transfer arm 81 movable along the support table 79 for transferring the cassettes C, a treating station 89 having a thinning unit 83, a rinsing unit 85 and a drying unit 87 arranged in order from the end remote from the transfer arm 81, and a treatment arm 91 movable along the treating station 89 for transferring cassettes C to and from the transfer arm 81, and moving the cassettes C to and from each of the treating units 83, 85 and 87. The treatment arm 91 is constructed to hold two cassettes C in a series arrangement, which cassettes C store wafers W in the same group. The treatment arm 91 may have a construction for holding one cassette C at a time.
The transfer arm 81 and treatment arm 91 correspond to the transport mechanism in this invention.
The thinning unit 83 has a treating tank 93 that can accommodate two cassettes C, and stores a caustic potash (KOH) solution as a treating solution heated to high temperature, for example. The treatment arm 91 immerses the cassettes C in the solution. Immersion time is changed for each group of wafers W stored in the cassettes C. The rinsing unit 85 has a rinsing tank 95 storing heated deionized water for cleaning the wafers W withdrawn from the treating tank 93. The drying unit 87 has a drying chamber 97 for drying and removing droplets from the wafers W cleaned with the deionized water. The treated wafers W are returned as stored in the cassettes C to the support table 79 by the transfer arm 81.
The above wafer thinning apparatus 7 has a control system constructed as shown in
A control unit 99 performs an overall control of the transfer arm 81, treatment arm 91 and treating station 89. The control items include, for example, timing of movement of the transfer arm 81 and treatment arm 91, and the time of immersion in the treating tank 93 by the treatment arm 91. The immersion time is determined by a computing unit 101. The computing unit 101 is connected to a memory 103 storing treatment information including a “target thickness”, “average thicknesses of the groups” and an “etching rate” which is a treating rate of the treating solution. The computing unit 101 determines an immersion time from this information, and transmits the immersion time to the control unit 99.
According to the foregoing wafer treating system 1, the thickness measuring unit 9 of the grouping apparatus 3 measures the thickness of each wafer W, and the storing unit 11 stores only the wafers W in the same group in the same cassette C beforehand. After the edge protection jig attaching and detaching apparatus 5 attaches an edge protection jig 33 to each wafer W, the control unit 99 of the wafer thinning apparatus 7 operates the transfer arm 81 and treatment arm 91 to transport one cassette C after another from the support table 79 to the treating tank 93. In subjecting each cassette C to the treatment by the treating solution, the control unit 99 changes the immersion time for each group. Since each cassette C already stores only those of the wafers W in a predetermined range of thickness, the plurality of wafers W in that cassette C have thickness variations falling within the predetermined range. Therefore, the thinning treatment performed by chemically etching the plurality of wafers W can reduce variations in the finishing thickness of the wafers W. Subsequently, the edge protection jig attaching and detaching apparatus 5 releases the edge protection jig 33 from each wafer W It is thus possible to thin only the part within the treatment circle of each wafer W, leaving the predetermined width of the treatment surface intact. The strength of wafers W is maintained after the thinning treatment. As a result, the wafers W can be handled with ease after the thinning treatment.
Further, the thickness measuring unit 9 of the grouping apparatus 3 measures the post-treatment thicknesses of wafers W, and collects their differences to the target thickness as data. The quality of the treatment is determined based on the differences to the target thickness. Thus, propriety of the treatment can be determined easily.
Next, Embodiment 2 of this invention will be described with reference to the drawings.
<Outline of Treatment>
First, an outline of this embodiment will be described with reference to
Assume that, as in Embodiment 1 described above, a plurality of wafers W to be treated have varied thicknesses in the range of 195 μm to 212 μm. That is, the variation in the thickness of all the wafers W at this stage is 17 μm.
First, the wafers W are successively taken out of each cassette C, and their thicknesses are measured. Then, the wafers W are rearranged in order of thickness. The order of thickness here refers to an order of increasing thickness or decreasing thickness. In this embodiment, the wafers W are stored in the cassette C in the order of decreasing thickness, i.e. from thickest to thinnest.
The plurality of wafers W rearranged in order of thickness as described above and stored in each cassette C are taken out of the cassette C in the order of decreasing thickness, and are immersed in that order in the treating solution such as of caustic potash (KOH) for treatment. Assume, for example, that the thickest wafer W is 205 μm thick, the next thickest 203 μm thick, and the third thickest 200 μm thick. Only the wafer W 205 μm thick is first placed on the treatment arm and immersed in the treating solution. Upon lapse of a time corresponding to a difference to the 203 μm thickness of the next wafer W, the treatment arm is pulled up from the treating solution. Then, the wafer W 203 μm thick is placed on the treatment arm, and the two wafers W are immersed in the treating solution. After a time corresponding to a difference in thickness to the next wafer W, the next wafer W is added again as described above. Finally, the treatment arm and all the wafers W are pulled up from the treating solution upon lapse of a treatment completion time derived from the thickness of the wafer W first put to the treatment, the target thickness, and the treating rate of the treating solution.
As described above, the wafers W in each cassette C are immersed in the treating solution, successively in order of thickness, the thickest wafer W first to the thinnest wafer W, and the thinning treatment is carried out by the treating solution for the respective wafers W. All the wafers W are withdrawn upon completion of the treatment. The thicknesses of the plurality of wafers W are measured beforehand, and stored in the cassette C in order of thickness. The wafers W are immersed in the treating solution, successively, starting with the thickest wafer W, thereby changing the immersion time for each wafer W. This procedure can absorb the variations in thickness among the plurality of wafers W Therefore, the thinning treatment with the treating solution chemically etching the plurality of wafers W can provide reduced variations in finishing thickness of the plurality of wafers W.
<Wafer Treating System>
Next, a specific wafer treating system for performing the above treatment will be described with reference to
First, an outline construction of a wafer treating system 1A will be described. The outline construction of the wafer treating system 1A itself is the same as the wafer treating system 1 in Embodiment 1, and will therefore be described with reference to
The wafer treating system 1A includes a rearranging apparatus 3A in place of the grouping apparatus 3 of the wafer treating system 1 (see
As shown in
The transfer arm 107, transport arm 117 and intermediate arm 119 correspond to the transport mechanism in this invention.
The above wafer thinning apparatus 7A has a control system constructed as shown in
A control unit 135 performs an overall control of the transfer arm 107, transport arm 117, intermediate arm 119 and treating station 115. The control items include, for example, transfer of cassettes C by the transfer arm 107, movement control of the intermediate arm 119 and transport arm 117, transfer control of wafers W between the intermediate arm 119 and transport arm 117, lift control of the treatment arms 129, 131 and 133, and transfer control of wafers C between the treatment arms 129, 131 and 133 and transport arm 117.
The control unit 135 has a memory 137 connected thereto. The memory 137 stores treatment information including a “target thickness”, “thicknesses” of the wafers W, and an “etching rate” which is a treating rate of the treating solution. The control unit 135 causes the intermediate arm 119 to take the thickest wafer W out of the cassette C, and then transfers the wafer W to the treatment arm 129 through the transport arm 117. The control unit 135 also determines from the treatment information an immersion time for the wafer W held by the treatment arm 129. The next thickest wafer W is transported to the treatment arm 129, and is immersed along with the preceding wafer W in the treating solution stored in the treating tank 123. This treatment is performed for all the wafers W in the cassette C. The treatment arm 129 is raised to withdraw all the wafers W from the treating tank 123 when the wafer W first put to the treatment has reached the target thickness. The wafers W are moved to the rinsing tank 125 and to the drying chamber 127. The control unit 135 determines time intervals for adding the wafers W according to differences in thickness between adjoining wafers W, for example.
According to the foregoing wafer treating system 1A, the thickness measuring unit 9 of the rearranging apparatus 3A measures the thicknesses of a plurality of wafers W, and the storing unit 11 stores the wafers W in order of thickness in a cassette C. After the edge protection jig attaching apparatus 5 attaches an edge protection jig 33 to each wafer W, the control unit 135 of the wafer thinning apparatus 7A operates the transfer arm 107, transport arm 117 and intermediate arm 119 to transport the wafers W from the cassette C on the support table 105 to the treating tank 123, in the order of thickness from thickest to thinnest, to subject each wafer W to the treatment by the treating solution, and to withdraw all the wafers W upon completion of the treatment. The thicknesses of the plurality of wafers W are measured beforehand, and stored in the cassette C in order of thickness. The wafers W are immersed in the treating solution, successively, starting with the thickest wafer W, thereby changing the immersion time for each wafer W. This procedure can absorb the variations in thickness among the plurality of wafers W Therefore, the thinning treatment with the treating solution chemically etching the plurality of wafers W can provide reduced variations in finishing thickness of the plurality of wafers W Subsequently, the edge protection jig attaching and detaching apparatus 5 releases the edge protection jig from each wafer W. It is thus possible to thin only the part within the treatment circle of each wafer W, leaving the predetermined width of the treatment surface intact. The strength of wafers W is maintained after the thinning treatment. As a result, the wafers W can be handled with ease after the thinning treatment.
This invention is not limited to the foregoing embodiments, but may be modified as follows:
(1) In each of Embodiments 1 and 2 described above, the wafer thinning apparatus 7 or 7A includes the rinsing unit 85 or 111 and drying unit 87 or 113 as well. These units may be included in a separate apparatus, and the wafer thinning apparatus 7 or 7A may include only the thinning unit 83 or 109.
(2) Each of Embodiments 1 and 2 treats wafers W with the edge protection jigs 33 attached thereto by suction. These edge protection jigs 33 may be replaced by edge protection jigs having a mechanical lock mechanism.
(3) In each of Embodiments 1 and 2, the edge protection jig attaching and detaching apparatus 5 has been described as an example of apparatus for attaching and releasing the edge protection jigs. Where an extra installation area is available, this apparatus may be provided separately from the treating system.
(4) In each of Embodiments 1 and 2, the thinning treatment is carried out using a solution of caustic potash (KOH). The thinning treatment may be carried out with other treating solutions.
(5) In each of Embodiments 1 and 2, the thickness measuring unit 9 is the optical type. Instead, this unit may be the capacitance type, pneumatic type or laser type, for example.
This invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof and, accordingly, reference should be made to the appended claims, rather than to the foregoing specification, as indicating the scope of the invention.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2006-151490 | May 2006 | JP | national |
