Workpiece processor having processing chamber with improved processing fluid flow

Information

  • Patent Grant
  • 7267749
  • Patent Number
    7,267,749
  • Date Filed
    Wednesday, March 26, 2003
    21 years ago
  • Date Issued
    Tuesday, September 11, 2007
    17 years ago
Abstract
A processing container (610) for providing a flow of a processing fluid during immersion processing of at least one surface of a microelectronic workpiece is set forth. The processing container comprises a principal fluid flow chamber (505) providing a flow of processing fluid to at least one surface of the workpiece and a plurality of nozzles (535) disposed to provide a flow of processing fluid to the principal fluid flow chamber. The plurality of nozzles are arranged and directed to provide vertical and radial fluid flow components that combine to generate a substantially uniform normal flow component radially across the surface of the workpiece. An exemplary apparatus using such a processing container is also set forth that is particularly adapted to carry out an electroplating process. In accordance with a further aspect of the present disclosure, an improved fluid removal path (640) is provided for removing fluid from a principal fluid flow chamber during immersion processing of a microelectronic workpiece.
Description
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

Not Applicable


BACKGROUND OF THE INVENTION

The fabrication of microelectronic components from a microelectronic workpiece, such as a semiconductor wafer substrate, polymer substrate, etc., involves a substantial number of processes. For purposes of the present application, a microelectronic workpiece is defined to include a workpiece formed from a substrate upon which microelectronic circuits or components, data storage elements or layers, and/or micro-mechanical elements are formed.


There are a number of different processing operations performed on the workpiece to fabricate the microelectronic component(s). Such operations include, for example, material deposition, patterning, doping, chemical mechanical polishing, electropolishing, and heat treatment. Material deposition processing involves depositing thin layers of material to the surface of the workpiece. Patterning provides removal of selected portions of these added layers. Doping of the microelectronic workpiece is the process of adding impurities known as “dopants” to the selected portions of the microelectronic workpiece to alter the electrical characteristics of the substrate material. Heat treatment of the microelectronic workpiece involves heating and/or cooling the microelectronic workpiece to achieve specific process results. Chemical mechanical polishing involves the removal of material through a combined chemical/mechanical process while electropolishing involves the removal of material from a workpiece surface using electrochemical reactions.


Numerous processing devices, known as processing “tools”, have been developed to implement the foregoing processing operations. These tools take on different configurations depending on the type of workpiece used in the fabrication process and the process or processes executed by the tool. One tool configuration, known as the Equinox(R) wet processing tool and available from Semitool, Inc., of Kalispell, Mont., includes one or more workpiece processing stations that utilize a workpiece holder and a process bowl or container for implementing wet processing operations. Such wet processing operations include electroplating, etching, cleaning, electroless deposition, electropolishing, etc.


In accordance with one configuration of the foregoing Equinox(R) tool, the workpiece holder and the processing container are disposed proximate one another and function to bring the microelectronic workpiece held by the workpiece holder into contact with a processing fluid disposed in the processing container thereby forming a processing chamber. Restricting the processing fluid to the appropriate portions of the workpiece, however, is often problematic. Additionally, ensuring proper mass transfer conditions between the processing fluid and the surface of the workpiece can be difficult. Absent such mass transfer control, the processing of the workpiece surface can often be non-uniform.


Conventional workpiece processors have utilized various techniques to bring the processing fluid into contact with the surface of the workpiece in a controlled manner. For example, the processing fluid may be brought into contact with the surface of the workpiece using a controlled spray. In other types of processes, such as in partial or full immersion processing, the processing fluid resides in a bath and at least one surface of the workpiece is brought into contact with or below the surface of the processing fluid. Electroplating, electroless plating, etching, cleaning, anodization, etc. are examples of such partial or full immersion processing.


Existing processing containers often provide a continuous flow of processing solution to the processing chamber through one or more inlets disposed at the bottom portion of the chamber. Even distribution of the processing solution over the workpiece surface to control the thickness and uniformity of the diffusion layer conditions is facilitated, for example, by a diffuser or the like that is disposed between the one or more inlets and the workpiece surface. A general illustration of such a system is shown in FIG. 1A. The diffuser 1 includes a plurality of apertures 2 that are provided to disburse the stream of fluid provided from the processing fluid inlet 3 as evenly as possible across the surface of the workpiece 4.


Although substantial improvements in diffusion layer control result from the use of a diffuser, such control is limited. With reference to FIG. 1A, localized areas 5 of increased flow velocity normal to the surface of the microelectronic workpiece are often still present notwithstanding the diffuser 1. These localized areas generally correspond to the apertures 2 of the diffuser 1. This effect is increased as the diffuser 1 is placed closer to the microelectronic workpiece 4 since the distance over which the fluid is allowed to disburse as it travels from the diffuser to the workpiece is decreased. This reduced diffusion length results in a more concentrated stream of processing fluid at the localized areas 5.


The present inventors have found that these localized areas of increased flow velocity at the surface of the workpiece affect the diffusion layer conditions and can result in non-uniform processing of the surface of the workpiece. The diffusion layer tends to be thinner at the localized areas 5 when compared to other areas of the workpiece surface. The surface reactions occur at a higher rate in the localized areas in which the diffusion layer thickness is reduced thereby resulting in radially, non-uniform processing of the workpiece. Diffuser hole pattern configurations also affect the distribution of the electric field in electrochemical processes, such as electroplating, which can similarly result in non-uniform processing of the workpiece surface (e.g., non-uniform deposition of the electroplated material).


Another problem often encountered in immersion processing of the workpiece is disruption of the diffusion layer due to the entrapment of bubbles at the surface of the workpiece. Bubbles can be created in the plumbing and pumping system of the processing equipment and enter the processing chamber where they migrate to sites on the surface of the workpiece under process. Processing is inhibited at those sites due, for example, to the disruption of the diffusion layer.


As microelectronic circuit and device manufacturers decrease the size of the components and circuits that they manufacture, the need for tighter control over the diffusion layer conditions between the processing solution and the workpiece surface becomes more critical. To this end, the present inventors have developed an improved processing chamber that addresses the diffusion layer non-uniformities and disturbances that exist in the workpiece processing tools currently employed in the microelectronic fabrication industry. Although the improved processing chamber set forth below is discussed in connection with a specific embodiment that is adapted for electroplating, it will be recognized that the improved chamber may be used in any workpiece processing tool in which process uniformity across the surface of a workpiece is desired.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1A is schematic block diagram of an immersion processing reactor assembly that incorporates a diffuser to distribute a flow of processing fluid across a surface of a workpiece.



FIG. 1B is a cross-sectional view of one embodiment of a reactor assembly that may incorporate the present invention.



FIG. 2 is a schematic diagram of one embodiment of a reactor chamber that may be used in the reactor assembly of FIG. 1B and includes an illustration of the velocity flow profiles associated with the flow of processing fluid through the reactor chamber.



FIGS. 3A-5 illustrate a specific construction of a complete processing chamber assembly that has been specifically adapted for electrochemical processing of a semiconductor wafer and that has been implemented to achieve the velocity flow profiles set forth in FIG. 2.



FIGS. 6 and 7 illustrate two embodiments of processing tools that may incorporate one or more processing stations constructed in accordance with the teachings of the present invention.





SUMMARY OF THE INVENTION

A processing container for providing a flow of a processing fluid during immersion processing of at least one surface of a microelectronic workpiece is set forth. The processing container comprises a principal fluid flow chamber providing a flow of processing fluid to at least one surface of the workpiece and a plurality of nozzles disposed to provide a flow of processing fluid to the principal fluid flow chamber. The plurality of nozzles are arranged and directed to provide vertical and radial fluid flow components that combine to generate a substantially uniform normal flow component radially across the surface of the workpiece. An exemplary apparatus using such a processing container is also set forth that is particularly adapted to carry out an electrochemical process, such as an electroplating process.


In accordance with a still further aspect of the present disclosure, a reactor for immersion processing of a microelectronic workpiece is set forth that includes a processing container having a processing fluid inlet through which a processing fluid flows into the processing container. The processing container also has an upper rim forming a weir over which processing fluid flows to exit from processing container. At least one helical flow chamber is disposed exterior to the processing container to receive processing fluid exiting from the processing container over the weir. Such a configuration assists in removing spent processing fluid from the site of the reactor while concurrently reducing turbulence during the removal process that might otherwise entrain air in the fluid stream or otherwise generate an unwanted degree of contact between the air and the processing fluid.


DETAILED DESCRIPTION OF THE INVENTIONS

Basic Reactor Components


With reference to FIG. 1B, there is shown a reactor assembly 20 for immersion-processing a microelectronic workpiece 25, such as a semiconductor wafer. Generally stated, the reactor assembly 20 is comprised of a reactor head 30 and a corresponding processing base, shown generally at 37 and described in substantial detail below, in which the processing fluid is disposed. The reactor assembly of the specifically illustrated embodiment is particularly adapted for effecting electrochemical processing of semiconductor wafers or like workpieces. It will be recognized, however, that the general reactor configuration of FIG. 1B is suitable for other workpiece types and processes as well.


The reactor head 30 of the reactor assembly 20 may be comprised of a stationary assembly 70 and a rotor assembly 75. Rotor assembly 75 is configured to receive and carry an associated microelectronic workpiece 25, position the workpiece in a process-side down orientation within a processing container in processing base 37, and to rotate or spin the workpiece. Because the specific embodiment illustrated here is adapted for electroplating, the rotor assembly 75 also includes a cathode contact assembly 85 that provides electroplating power to the surface of the microelectronic workpiece. It will be recognized, however, that backside contact and/or support of the workpiece on the reactor head 30 may be implemented in lieu of front side contact/support illustrated here.


The reactor head 30 is typically mounted on a lift/rotate apparatus which is configured to rotate the reactor head 30 from an upwardly-facing disposition in which it receives the microelectronic workpiece to be plated, to a downwardly facing disposition in which the surface of the microelectronic workpiece to be plated is positioned so that it may be brought into contact with the processing fluid that is held within a processing container of the processing base 37. A robotic arm, which preferably includes an end effector, is typically employed for placing the microelectronic workpiece 25 in position on the rotor assembly 75, and for removing the plated microelectronic workpiece from within the rotor assembly. During loading of the microelectronic workpiece, assembly 85 may be operated between an open state that allows the microelectronic workpiece to be placed on the rotor assembly 75, and a closed state that secures the microelectronic workpiece to the rotor assembly for subsequent processing. In the context of an electroplating reactor, such operation also brings the electrically conductive components of the contact assembly 85 into electrical engagement with the surface of the microelectronic workpiece that is to be plated.


It will be recognized that other reactor assembly configurations may be used with the inventive aspects of the disclosed reactor chamber, the foregoing being merely illustrative.


Processing Container



FIG. 2 illustrates the basic construction of processing base 37 and the corresponding flow velocity contour pattern resulting from the processing container construction. As illustrated, the processing base 37 generally comprises a main fluid flow chamber 505, an antechamber 510, a fluid inlet 515, a plenum 520, a flow diffuser 525 separating the plenum 520 from the antechamber 510, and a nozzle/slot assembly 530 separating the plenum 520 from the main fluid flow chamber 505. These components cooperate to provide a flow (here, of the electroplating solution) at the microelectronic workpiece 25 with a substantially radially independent normal component. In the illustrated embodiment, the impinging flow is centered about central axis 537 and possesses a nearly uniform component normal to the surface of the microelectronic workpiece 25. This results in a substantially uniform mass flux to the microelectronic workpiece surface that, in turn, enables substantially uniform processing thereof.


Processing fluid is provided through fluid inlet 515 disposed at the bottom of the container 35. The fluid from the fluid inlet 515 is directed therefrom at a relatively high velocity through antechamber 510. In the illustrated embodiment, antechamber 510 includes an acceleration channel 540 through which the processing fluid flows radially from the fluid inlet 515 toward fluid flow region 545 of antechamber 510. Fluid flow region 545 has a generally inverted U-shaped cross-section that is substantially wider at its outlet region proximate flow diffuser 525 than at its inlet region proximate acceleration channel 540. This variation in the cross-section assists in removing any gas bubbles from the processing fluid before the processing fluid is allowed to enter the main fluid flow chamber 505. Gas bubbles that would otherwise enter the main fluid flow chamber 505 are allowed to exit the processing base 37 through a gas outlet (not illustrated in FIG. 2, but illustrated in the embodiment shown in FIGS. 3-5) disposed at an upper portion of the antechamber 510.


Processing fluid within antechamber 510 is ultimately supplied to main fluid flow chamber 505. To this end, the processing fluid is first directed to flow from a relatively high-pressure region 550 of the antechamber 510 to the comparatively lower-pressure plenum 520 through flow diffuser 525. Nozzle assembly 530 includes a plurality of nozzles or slots 535 that are disposed at a slight angle with respect to horizontal. Processing fluid exits plenum 520 through nozzles 535 with fluid velocity components in the vertical and radial directions.


Main fluid flow chamber 505 is defined at its upper region by a contoured sidewall 560 and a slanted sidewall 565. The contoured sidewall 560 assists in preventing fluid flow separation as the processing fluid exits nozzles 535 (particularly the uppermost nozzle(s)) and turns upward toward the surface of microelectronic workpiece 25. Beyond breakpoint 570, fluid flow separation will not substantially affect the uniformity of the normal flow. As such, slanted sidewall 565 can generally have any shape, including a continuation of the shape of contoured sidewall 560. In the specific embodiment disclosed here, sidewall 565 is slanted and, in those applications involving electrochemical processing is used to support one or more anodes/electrical conductors.


Processing fluid exits from main fluid flow chamber 505 through a generally annular outlet 572. Fluid exiting annular outlet 572 may be provided to a further exterior chamber for disposal or may be replenished for re-circulation through the processing fluid supply system.


In those instances in which the processing base 37 forms part of an electroplating reactor, the processing base 37 is provided with one or more anodes. In the illustrated embodiment, a central anode 580 is disposed in the lower portion of the main fluid flow chamber 505. If the peripheral edges of the surface of the microelectronic workpiece 25 extend radially beyond the extent of contoured sidewall 560, then the peripheral edges are electrically shielded from central anode 580 and reduced plating will take place in those regions. However, if plating is desired in the peripheral regions, one or more further anodes may be employed proximate the peripheral regions. Here, a plurality of annular anodes 585 are disposed in a generally concentric manner on slanted sidewall 565 to provide a flow of electroplating current to the peripheral regions. An alternative embodiment would include a single anode or multiple anodes with no shielding from the contoured walls to the edge of the microelectronic workpiece.


The anodes 580, 585 may be provided with electroplating power in a variety of manners. For example, the same or different levels of electroplating power may be multiplexed to the anodes 580, 585 Alternatively, all of the anodes 580, 585 may be connected to receive the same level of electroplating power from the same power source. Still further, each of the anodes 580, 585 may be connected to receive different levels of electroplating power to compensate for the variations in the resistance of the plated film. An advantage of the close proximity of the anodes 585 to the microelectronic workpiece 25 is that it provides a high degree of control of the radial film growth resulting from each anode.


Gases may undesirably be entrained in the processing fluid as the processing fluid circulates through the processing system. These gases may form bubbles that ultimately find their way to the diffusion layer and thereby impair the uniformity of the processing that takes place at the surface of the workpiece. To reduce this problem, as well as to reduce the likelihood of the entry of bubbles into the main fluid flow chamber 505, processing base 37 includes several unique features. With respect to central anode 580, a Venturi flow path 590 is provided between the underside of central anode 580 and the relatively lower pressure region of acceleration channel 540. In addition to desirably influencing the flow effects along central axis 537, this path results in a Venturi effect that causes the processing fluid proximate the surfaces disposed at the lower portion of the chamber, such as at the surface of central anode 580, to be drawn into acceleration channel 540 and may assist in sweeping gas bubbles away from the surface of the anode. More significantly, this Venturi effect provides a suction flow that affects the uniformity of the impinging flow at the central portion of the surface of the microelectronic workpiece along central axis 537. Similarly, processing fluid sweeps across the surfaces at the upper portion of the chamber, such as the surfaces of anodes 585, in a radial direction toward annular outlet 572 to remove gas bubbles present at such surfaces. Further, the radial components of the fluid flow at the surface of the microelectronic workpiece assists in sweeping gas bubbles therefrom.


There are numerous processing advantages with respect to the illustrated flow through the reactor chamber. As illustrated, the flow through the nozzles/slots 535 is directed away from the microelectronic workpiece surface and, as such, there are no substantial localized normal of flow components of fluid created that disturb the substantial uniformity of the diffusion layer. Although the diffusion layer may not be perfectly uniform, any non-uniformity will be relatively gradual as a result. Further, in those instances in which the microelectronic workpiece is rotated, such remaining non-uniformities in the diffusion layer can often be tolerated while consistently achieving processing goals.


As is also evident from the foregoing reactor design, the flow that is normal to the microelectronic workpiece has a slightly greater magnitude near the center of the microelectronic workpiece. This creates a dome-shaped meniscus whenever the microelectronic workpiece is not present (i.e., before the microelectronic workpiece is lowered into the fluid). The dome-shaped meniscus assists in minimizing bubble entrapment as the microelectronic workpiece is lowered into the processing solution.


The flow at the bottom of the main fluid flow chamber 505 resulting from the Venturi flow path influences the fluid flow at the centerline thereof. The centerline flow velocity is otherwise difficult to implement and control. However, the strength of the Venturi flow provides a non-intrusive design variable that may be used to affect this aspect of the flow.


A still further advantage of the foregoing reactor design is that it assists in preventing bubbles that find their way to the chamber inlet from reaching the microelectronic workpiece. To this end, the flow pattern is such that the solution travels downward just before entering the main chamber. As such, bubbles remain in the antechamber and escape through holes at the top thereof. Further, bubbles are-prevented from entering the main chamber through the Venturi flow path through the use of the shield that covers the Venturi flow path (see description of the embodiment of the reactor illustrated in FIGS. 3-5). Still further, the upward sloping inlet path (see FIG. 5 and appertaining description) to the antechamber prevents bubbles from entering the main chamber through the Venturi flow path.



FIGS. 3-5 illustrate a specific construction of a complete processing chamber assembly 610 that has been specifically adapted for electrochemical processing of a semiconductor microelectronic workpiece. More particularly, the illustrated embodiment is specifically adapted for depositing a uniform layer of material on the surface of the workpiece using electroplating.


As illustrated, the processing base 37 shown in FIG. 1B is comprised of processing chamber assembly 610 along with a corresponding exterior cup 605. Processing chamber assembly 610 is disposed within exterior cup 605 to allow exterior cup 605 to receive spent processing fluid that overflows from the processing chamber assembly 610. A flange 615 extends about the assembly 610 for securement with, for example, the frame of the corresponding tool.


With particular reference to FIGS. 4 and 5, the flange of the exterior cup 605 is formed to engage or otherwise accept rotor assembly 75 of reactor head 30 (shown in FIG. 1B) and allow contact between the microelectronic workpiece 25 and the processing solution, such as electroplating solution, in the main fluid flow chamber 505. The exterior cup 605 also includes a main cylindrical housing 625 into which a drain cup member 627 is disposed. The drain cup member 627 includes an outer surface having channels 629 that, together with the interior wall of main cylindrical housing 625, form one or more helical flow chambers 640 that serve as an outlet for the processing solution. Processing fluid overflowing a weir member 739 at the top of processing cup 35 drains through the helical flow chambers 640 and exits an outlet (not illustrated) where it is either disposed of or replenished and re-circulated. This configuration is particularly suitable for systems that include fluid re-circulation since it assists in reducing the mixing of gases with the processing solution thereby further reducing the likelihood that gas bubbles will interfere with the uniformity of the diffusion layer at the workpiece surface.


In the illustrated embodiment, antechamber 510 is defined by the walls of a plurality of separate components. More particularly, antechamber 510 is defined by the interior walls of drain cup member 627, an anode support member 697, the interior and exterior walls of a mid-chamber member 690, and the exterior walls of flow diffuser 525.



FIGS. 3B and 4 illustrate the manner in which the foregoing components are brought together to form the reactor. To this end, the mid-chamber member 690 is disposed interior of the drain cup member 627 and includes a plurality of leg supports 692 that sit upon a bottom wall thereof. The anode support member 697 includes an outer wall that engages a flange that is disposed about the interior of drain cup member 627. The anode support member 697 also includes a channel 705 that sits upon and engages an upper portion of flow diffuser 525, and a further channel 710 that sits upon and engages an upper rim of nozzle assembly 530. Mid-chamber member 690 also includes a centrally disposed receptacle 715 that is dimensioned to accept the lower portion of nozzle assembly 530. Likewise, an annular channel 725 is disposed radially exterior of the annular receptacle 715 to engage a lower portion of flow diffuser 525.


In the illustrated embodiment, the flow diffuser 525 is formed as a single piece and includes a plurality of vertically oriented slots 670. Similarly, the nozzle assembly 530 is formed as a single piece and includes a plurality of horizontally oriented slots that constitute the nozzles 535.


The anode support member 697 includes a plurality of annular grooves that are dimensioned to accept corresponding annular anode assemblies 785. Each anode assembly 785 includes an anode 585 (preferably formed from platinized titanium or in other inert metal) and a conduit 730 extending from a central portion of the anode 585 through which a metal conductor may be disposed to electrically connect the anode 585 of each assembly 785 to an external source of electrical power. Conduit 730 is shown to extend entirely through the processing chamber assembly 610 and is secured at the bottom thereof by a respective fitting 733. In this manner, anode assemblies 785 effectively urge the anode support member 697 downward to clamp the flow diffuser 525, nozzle assembly 530, mid-chamber member 690, and drain cup member 627 against the bottom portion 737 of the exterior cup 605. This allows for easy assembly and disassembly of the processing chamber 610. However, it will be recognized that other means may be used to secure the chamber elements together as well as to conduct the necessary electrical power to the anodes.


The illustrated embodiment also includes a weir member 739 that detachably snaps or otherwise easily secures to the upper exterior portion of anode support member 697. As shown, weir member 739 includes a rim 742 that forms a weir over which the processing solution flows into the helical flow chamber 640. Weir member 739 also includes a transversely extending flange 744 that extends radially inward and forms an electric field shield over all or portions of one or more of the anodes 585. Since the weir member 739 may be easily removed and replaced, the processing chamber assembly 610 may be readily reconfigured and adapted to provide different electric field shapes. Such differing electrical field shapes are particularly useful in those instances in which the reactor must be configured to process more than one size or shape of a workpiece. Additionally, this allows the reactor to be configured to accommodate workpieces that are of the same size, but have different plating area requirements.


The anode support member 697, with the anodes 585 in place, forms the contoured sidewall 560 and slanted sidewall 565 that is illustrated in FIG. 2. As noted above, the lower region of anode support member 697 is contoured to define the upper interior wall of antechamber 510 and preferably includes one or more gas outlets 665 that are disposed therethrough to allow gas bubbles to exit from the antechamber 510 to the exterior environment.


With particular reference to FIG. 5, fluid inlet 515 is defined by an inlet fluid guide, shown generally at 810, that is secured to mid-chamber member 690 by one or more fasteners 815. Inlet fluid guide 810 includes a plurality of open channels 817 that guide fluid received at fluid inlet 515 to an area beneath mid-chamber member 690. Channels 817 of the illustrated embodiment are defined by upwardly angled walls 819. Processing fluid exiting channels 817 flows therefrom to one or more further channels 821 that are likewise defined by walls that angle upward.


Central anode 580 includes an electrical connection rod 581 that proceeds to the exterior of the processing chamber assembly 610 through central apertures formed in nozzle assembly 530, mid-chamber member 690 and inlet fluid guide 810. The Venturi flow path regions shown at 590 in FIG. 2 are formed in FIG. 5 by vertical channels 823 that proceed through drain cup member 627 and the bottom wall of nozzle member 530. As illustrated, the fluid inlet guide 810 and, specifically, the upwardly angled walls 819 extend radially beyond the shielded vertical channels 823 so that any bubbles entering the inlet proceed through the upward channels 821 rather than through the vertical channels 823.


The foregoing reactor assembly may be readily integrated in a processing tool that is capable of executing a plurality of processes on a workpiece, such as a semiconductor microelectronic workpiece. One such processing tool is the LT-210™ electroplating apparatus available from Semitool, Inc., of Kalispell, Mont. FIGS. 6 and 7 illustrate such integration. The system of FIG. 6 includes a plurality of processing stations 1610. Preferably, these processing stations include one or more rinsing/drying stations and one or more electroplating stations (including one or more electroplating reactors such as the one above), although further immersion-chemical processing stations constructed in accordance with the of the present invention may also be employed. The system also preferably includes a thermal processing station, such as at 1615, that includes at least one thermal reactor that is adapted for rapid thermal processing (RTP).


The workpieces are transferred between the processing stations 1610 and the RTP station 1615 using one or more robotic transfer mechanisms 1620 that are disposed for linear movement along a central track 1625. One or more of the stations 1610 may also incorporate structures that are adapted for executing an in-situ rinse. Preferably, all of the processing stations as well as the robotic transfer mechanisms are disposed in a cabinet that is provided with filtered air at a positive pressure to thereby limit airborne contaminants that may reduce the effectiveness of the microelectronic workpiece processing.



FIG. 7 illustrates a further embodiment of a processing tool in which an RTP station 1635, located in portion 1630, that includes at least one thermal reactor, may be integrated in a tool set. Unlike the embodiment of FIG. 6, in this embodiment, at least one thermal reactor is serviced by a dedicated robotic mechanism 1640. The dedicated robotic mechanism 1640 accepts workpieces that are transferred to it by the robotic transfer mechanisms 1620. Transfer may take place through an intermediate staging door/area 1645. As such, it becomes possible to hygienically separate the RTP portion 1630 of the processing Tool from other portions of the tool. Additionally, using such a construction, the illustrated annealing station may be implemented as a separate module that is attached to upgrade an existing tool set. It will be recognized that other types of processing stations may be located in portion 1630 in addition to or instead of RTP station 1635.


Numerous modifications may be made to the foregoing system without departing from the basic teachings thereof. Although the present invention has been described in substantial detail with reference to one or more specific embodiments, those of skill in the art will recognize that changes may be made thereto without departing from the scope and spirit of the invention as set forth herein.

Claims
  • 1. A reactor for electrochemically processing least one surface of a microelectronic workpiece, the processing container comprising: a reactor head having a workpiece holder configured to hold a microelectronic wafer process-side downward and a plurality of electrical contacts configured to provide electroplating power to the process-side of the microelectronic wafer; anda container having (a) principal fluid flow chamber having a processing zone configured to process a workpiece in a horizontal position,(b) a weir in the fluid flow chamber over which the processing solution can flow, and(c) a plurality of nozzles angularly disposed in one or more sidewalls of the principal fluid flow chamber at a level within the principal fluid flow chamber below the weir.
  • 2. A microelectronic workpiece processing container as claimed in claim 1 wherein the plurality of nozzles are disposed in the one or more sidewalls of the principal fluid flow chamber so as to form a substantially uniform normal flow component radially across the surface of the workpiece in which the substantially uniform normal flow component is slightly greater at a radial central portion thereby forming a meniscus that assists in preventing air entrapment as the workpiece is brought into engagement with the surface of the processing fluid in the processing container.
  • 3. A microelectronic workpiece processing container as claimed in claim 1 and further comprising an antechamber upstream of the plurality of nozzles, the antechamber being dimensioned to assist in the removal of gaseous components entrained in the processing fluid.
  • 4. A microelectronic workpiece processing container as claimed in claim 3 and further comprising a plenum disposed between the antechamber and the plurality of nozzles.
  • 5. A microelectronic workpiece processing container as claimed in claim 4 wherein the antechamber comprises an inlet and an outlet, the inlet having a smaller cross-section compared to the outlet.
  • 6. A microelectronic workpiece processing container as claimed in claim 1 wherein at least some of the plurality of nozzles are generally horizontal slots disposed through the one or more sidewalls of the principal fluid flow chamber.
  • 7. A processing container as claimed in claim 1 wherein the principal fluid flow chamber comprises one or more contoured sidewalls at an upper portion thereof to inhibit fluid flow separation as the processing fluid flows toward an upper portion of the principal fluid flow chamber to contact the surface of the microelectronic workpiece.
  • 8. A processing container as claimed in claim 1 wherein the principal fluid flow chamber is defined at an upper portion thereof by an angled wall.
  • 9. A microelectronic workpiece processing container as claimed in claim 1 wherein the principal fluid flow chamber further comprises a Venturi effect inlet disposed at a lower portion thereof.
  • 10. A microelectronic workpiece processing container as claimed in claim 9 wherein the Venturi effect inlet is configured to provide a Venturi effect that facilitates recirculation of processing fluid flow in a lower portion of the principal fluid flow chamber.
  • 11. A reactor for immersion processing at least one surface of a microelectronic workpiece, the reactor comprising: a reactor head including a workpiece support configured to hold a workpiece at least substantially horizontally in a processing position and a motor connected to the workpiece support, wherein the motor is configured to rotate the workpiece support about a vertically orientated axis;one or more electrical contacts disposed on the workpiece support and positioned thereon to make electrical contact with the microelectronic workpiece;a processing container including a principal fluid flow chamber having a weir over which a processing solution can flow and a plurality of nozzles angularly disposed in a sidewall of the principal fluid flow chamber at a level within the principal fluid flow chamber below the weir; anda plurality of individually operable electrical conductors in the principal fluid flow chamber.
  • 12. A reactor as claimed in claim 11 and further comprising an electrode disposed at a lower portion of the processing container to provide electrical contact between an electrical power supply and the processing fluid.
  • 13. A reactor as claimed in claim 12 wherein the processing container is defined at an upper portion thereof by an angled wall, the processing container further comprising at least one further electrode in fixed positional alignment with the angled wall to provide electrical contact between an electrical power supply and the processing fluid.
  • 14. An apparatus for processing a microelectronic workpiece comprising: a plurality of workpiece processing stations;a microelectronic workpiece robotic transfer;at least one of the plurality of workpiece processing stations including a reactor having a processing container comprisinga principal fluid flow chamber having a processing zone configured to process a workpiece in a horizontal position;a weir in the principal fluid flow chamber over which a processing solution can flow;a plurality of nozzles angularly disposed in one or more sidewalls of the principal fluid flow chamber at a level within the principal fluid flow chamber below the weir; anda plurality of individually operable concentric anodes in the principal fluid flow chamber.
  • 15. An apparatus as claimed in claim 14 wherein the plurality of nozzles are disposed with respect to one another to provide vertical and radial fluid flow components that combine to generate a substantially uniform normal flow component radially across the at least one surface of the workpiece.
  • 16. An apparatus as claimed in claim 14 wherein the plurality of nozzles are arranged so that the substantially uniform normal flow component is slightly greater at a radial central portion as referenced to the workpiece thereby forming a meniscus that assists in preventing air entrapment as the workpiece is brought into engagement with the surface of the processing fluid in the processing container.
  • 17. An apparatus as claimed in claim 16 wherein at least some of the plurality of nozzles are generally horizontal slots in the one or more sidewalls of the principal fluid flow chamber.
  • 18. An apparatus as claimed in claim 14 wherein the processing container further comprises a vented antechamber upstream of the plurality of nozzles.
  • 19. An apparatus as claimed in claim 18 wherein the processing container further comprises a plenum disposed between the vented antechamber and the plurality of nozzles.
  • 20. An apparatus as claimed in claim 18 wherein the vented antechamber comprises an inlet portion and an outlet portion, the inlet portion having a smaller cross-section compared to the outlet portion.
  • 21. An apparatus as claimed in claim 14 wherein the principal fluid flow chamber further comprises a Venturi effect inlet.
  • 22. An apparatus as claimed in claim 21 wherein the Venturi effect inlet generates a Venturi effect that facilitates recirculation of processing fluid flow in a lower portion of the principal fluid flow chamber.
  • 23. A reactor for electrochemically processing at least one surface of a microelectronic workpiece, the processing container comprising: a reactor head having a workpiece holder configured to hold a microelectronic wafer process-side downward and a plurality of electrical contacts configured to provide electroplating power to the process-side of the microelectronic wafer; anda container having: (a) a principal fluid flow chamber having a processing zone configured to process a workpiece in a horizontal position,(b) a weir in the fluid flow chamber over which the processing solution can flow,(c) a plurality of nozzles angularly disposed in one or more sidewalls of the principal fluid flow chamber at a level within the principal fluid flow chamber below the weir, and(d) a plurality of individually operable concentric anodes in the principal fluid flow chamber.
  • 24. A microelectronic workpiece processing container as claimed in claim 23 wherein the plurality of nozzles are disposed in the one or more sidewalls of the principal fluid flow chamber so as to form a substantially uniform normal flow component radially across the surface of the workpiece in which the substantially uniform normal flow component is slightly greater at a radial central portion thereby forming a meniscus that assists in preventing air entrapment as the workpiece is brought into engagement with the surface of the processing fluid in the processing container.
  • 25. A microelectronic workpiece processing container as claimed in claim 23 and further comprising an antechamber upstream of the plurality of nozzles, the antechamber being dimensioned to assist in the removal of gaseous components entrained in the processing fluid.
  • 26. A microelectronic workpiece processing container as claimed in claim 25 and further comprising a plenum disposed between the antechamber and the plurality of nozzles.
  • 27. A microelectronic workpiece processing container as claimed in claim 23 wherein the antechamber comprises an inlet and an outlet, the inlet having a smaller cross-section compared to the outlet.
  • 28. A microelectronic workpiece processing container as claimed in claim 23 wherein at least some of the plurality of nozzles are generally horizontal slots disposed through the one or more sidewalls of the principal fluid flow chamber.
  • 29. A processing container as claimed in claim 23 wherein the principal fluid flow chamber comprises one or more contoured sidewalls at an upper portion thereof to inhibit fluid flow separation as the processing fluid flows toward an upper portion of the principal fluid flow chamber to contact the surface of the microelectronic workpiece.
  • 30. A processing container as claimed in claim 23 wherein the principal fluid flow chamber is defined at an upper portion thereof by an angled wall.
  • 31. A microelectronic workpiece processing container as claimed in claim 23 wherein the principal fluid flow chamber further comprises a Venturi effect inlet disposed at a lower portion thereof.
  • 32. A microelectronic workpiece processing container as claimed in claim 31 wherein the Venturi effect inlet is configured to provide a Venturi effect that facilitates recirculation of processing fluid flow in a lower portion of the principal fluid flow chamber.
CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. application Ser. No. 09/804,696, filed Mar. 12, 2001 now U.S. Pat. No. 6,569,297, which is a continuation of International Application No. PCT/US00/10210, filed Apr. 13, 2000 in the English language and published in the English language as International Publication No. WO00/61837, which in turn claims priority to the following three U.S. Provisional Applications: Ser. No. 60/128,055, entitled “WORKPIECE PROCESSOR HAVING IMPROVED PROCESSING CHAMBER,” filed Apr. 13, 1999; U.S. Ser. No. 60/143,769, entitled “WORKPIECE PROCESSING HAVING IMPROVED PROCESSING CHAMBER,” filed Jul. 12, 1999; U.S. Ser. No. 60/182,160 entitled “WORKPIECE PROCESSOR HAVING IMPROVED PROCESSING CHAMBER,” filed Feb. 14, 2000.

US Referenced Citations (468)
Number Name Date Kind
1526644 Pinney Feb 1925 A
1881713 Laukel Oct 1932 A
2256274 Boedecker et al. Sep 1941 A
3309263 Grobe Mar 1967 A
3616284 Bodmer et al. Oct 1971 A
3664933 Clauss May 1972 A
3706635 Kowalski Dec 1972 A
3706651 Leland Dec 1972 A
3716462 Jensen Feb 1973 A
3727620 Orr Apr 1973 A
3798003 Ensley et al. Mar 1974 A
3798033 Yost, Jr. Mar 1974 A
3878066 Dettke et al. Apr 1975 A
3930963 Polichette et al. Jan 1976 A
3953265 Hood Apr 1976 A
3968885 Hassan et al. Jul 1976 A
4000046 Weaver Dec 1976 A
4022679 Koziol et al. May 1977 A
4030015 Herko et al. Jun 1977 A
4046105 Gomez Sep 1977 A
4072557 Schiel Feb 1978 A
4082638 Jumer Apr 1978 A
4113577 Ross et al. Sep 1978 A
4132567 Blackwood Jan 1979 A
4134802 Herr Jan 1979 A
4137867 Aigo Feb 1979 A
4165252 Gibbs Aug 1979 A
4170959 Aigo Oct 1979 A
4222834 Bacon et al. Sep 1980 A
4238310 Eckler et al. Dec 1980 A
4246088 Murphy et al. Jan 1981 A
4259166 Whitehurst Mar 1981 A
4276855 Seddon Jul 1981 A
4286541 Blackwood Sep 1981 A
4287029 Shimamura Sep 1981 A
4304641 Grandia et al. Dec 1981 A
4323433 Loch Apr 1982 A
4341629 Uhlinger Jul 1982 A
4360410 Fletcher et al. Nov 1982 A
4378283 Seyffert Mar 1983 A
4384930 Eckles May 1983 A
4391694 Runsten Jul 1983 A
4422915 Wielonski et al. Dec 1983 A
4431361 Bayne Feb 1984 A
4437943 Beck et al. Mar 1984 A
4439243 Titus Mar 1984 A
4439244 Allevato Mar 1984 A
4440597 Wells et al. Apr 1984 A
4443117 Muramoto et al. Apr 1984 A
4449885 Hertel et al. May 1984 A
4451197 Lange May 1984 A
4463503 Applegate Aug 1984 A
4466864 Bacon Aug 1984 A
4469566 Wray Sep 1984 A
4475823 Stone Oct 1984 A
4480028 Kato et al. Oct 1984 A
4495153 Midorikawa Jan 1985 A
4495453 Inaba Jan 1985 A
4500394 Rizzo Feb 1985 A
4529480 Trokhan Jul 1985 A
4541895 Albert Sep 1985 A
4544446 Cady Oct 1985 A
4566847 Maeda Jan 1986 A
4576685 Goffredo et al. Mar 1986 A
4576689 Makkaev et al. Mar 1986 A
4585539 Edson Apr 1986 A
4604177 Sivilotti Aug 1986 A
4604178 Fiegener Aug 1986 A
4634503 Nogavich Jan 1987 A
4639028 Olson Jan 1987 A
4648944 George et al. Mar 1987 A
4664133 Silvernail May 1987 A
4670126 Messer et al. Jun 1987 A
4685414 DiRico Aug 1987 A
4687552 Early et al. Aug 1987 A
4693017 Oehler et al. Sep 1987 A
4696729 Santini Sep 1987 A
4715934 Tamminen Dec 1987 A
4732785 Brewer Mar 1988 A
4741624 Barroyer May 1988 A
4750505 Inuta Jun 1988 A
4760671 Ward Aug 1988 A
4761214 Hinman Aug 1988 A
4770590 Hugues et al. Sep 1988 A
4773436 Cantrell et al. Sep 1988 A
4781800 Goldman et al. Nov 1988 A
4790262 Nakayama Dec 1988 A
4800818 Kawaguchi et al. Jan 1989 A
4824538 Hibino et al. Apr 1989 A
4828654 Reed May 1989 A
4838289 Kottman Jun 1989 A
4849054 Klowak Jul 1989 A
4858539 Schumann Aug 1989 A
4864239 Casarcia et al. Sep 1989 A
4868992 Crafts et al. Sep 1989 A
4898647 Luce et al. Feb 1990 A
4902398 Homstad Feb 1990 A
4903717 Sumnitsch Feb 1990 A
4906341 Yamakawa Mar 1990 A
4911818 Kikuchi et al. Mar 1990 A
4913085 Vohringer et al. Apr 1990 A
4924890 Giles et al. May 1990 A
4944650 Matsumoto Jul 1990 A
4949671 Davis et al. Aug 1990 A
4951601 Maydan et al. Aug 1990 A
4959278 Shimauchi et al. Sep 1990 A
4962726 Matsushita et al. Oct 1990 A
4979464 Kunze-Concewitz et al. Dec 1990 A
4982215 Matsuoka Jan 1991 A
4982753 Grebinski Jan 1991 A
4988533 Freeman et al. Jan 1991 A
5000827 Schuster et al. Mar 1991 A
5020200 Mimasaka Jun 1991 A
5024746 Stierman et al. Jun 1991 A
5026239 Chiba Jun 1991 A
5032217 Tanaka Jul 1991 A
5048589 Cook et al. Sep 1991 A
5054988 Shiraiwa Oct 1991 A
5055036 Asano et al. Oct 1991 A
5061144 Akimoto Oct 1991 A
5069548 Boehnlein Dec 1991 A
5078852 Yee Jan 1992 A
5083364 Olbrich et al. Jan 1992 A
5096550 Mayer et al. Mar 1992 A
5110248 Asano et al. May 1992 A
5115430 Hahne et al. May 1992 A
5117769 DeBoer Jun 1992 A
5125784 Asano Jun 1992 A
5128912 Hug et al. Jul 1992 A
5135636 Yee et al. Aug 1992 A
5138973 Davis et al. Aug 1992 A
5146136 Ogura Sep 1992 A
5151168 Gilton et al. Sep 1992 A
5155336 Gronet et al. Oct 1992 A
5156174 Thompson Oct 1992 A
5156730 Bhatt et al. Oct 1992 A
5168886 Thompson et al. Dec 1992 A
5168887 Thompson Dec 1992 A
5169408 Biggerstaff et al. Dec 1992 A
5172803 Lewin Dec 1992 A
5174045 Thompson et al. Dec 1992 A
5178512 Skrobak Jan 1993 A
5178639 Nishi Jan 1993 A
5180273 Salaya et al. Jan 1993 A
5183377 Becker et al. Feb 1993 A
5186594 Toshima et al. Feb 1993 A
5209180 Shoda May 1993 A
5209817 Ahmad et al. May 1993 A
5217586 Datta et al. Jun 1993 A
5222310 Thompson et al. Jun 1993 A
5224503 Thompson Jul 1993 A
5224504 Thompson et al. Jul 1993 A
5227041 Brogden et al. Jul 1993 A
5228232 Miles Jul 1993 A
5228966 Murata Jul 1993 A
5230371 Lee Jul 1993 A
5232511 Bergman Aug 1993 A
5235995 Bergman et al. Aug 1993 A
5238500 Bergman Aug 1993 A
5252137 Tateyama et al. Oct 1993 A
5252807 Chizinsky Oct 1993 A
5256262 Blomsterberg Oct 1993 A
5256274 Poris Oct 1993 A
5271953 Litteral Dec 1993 A
5271972 Kwok et al. Dec 1993 A
5301700 Kamikawa et al. Apr 1994 A
5302464 Nomura et al. Apr 1994 A
5306895 Ushikoshi et al. Apr 1994 A
5314294 Taniguchi May 1994 A
5316642 Young May 1994 A
5326455 Kubo et al. Jul 1994 A
5330604 Allum et al. Jul 1994 A
5332271 Grant et al. Jul 1994 A
5332445 Bergman Jul 1994 A
5340456 Mehler Aug 1994 A
5344491 Katou Sep 1994 A
5348620 Hermans et al. Sep 1994 A
5349978 Sago Sep 1994 A
5361449 Akimoto Nov 1994 A
5363171 Mack Nov 1994 A
5364504 Smurkoski et al. Nov 1994 A
5366785 Sawdai Nov 1994 A
5366786 Connor et al. Nov 1994 A
5368711 Poris Nov 1994 A
5372848 Blackwell et al. Dec 1994 A
5376176 Kuriyama Dec 1994 A
5377708 Bergman Jan 1995 A
5388945 Garric et al. Feb 1995 A
5391285 Lytle et al. Feb 1995 A
5391517 Gelatos et al. Feb 1995 A
5393624 Ushijima Feb 1995 A
5405518 Hsieh et al. Apr 1995 A
5411076 Matsunaga et al. May 1995 A
5421893 Perlov Jun 1995 A
5421987 Tzanavaras et al. Jun 1995 A
5427674 Langenskiold et al. Jun 1995 A
5429686 Chiu et al. Jul 1995 A
5429733 Ishida Jul 1995 A
5431421 Thompson Jul 1995 A
5431803 DiFranco et al. Jul 1995 A
5437777 Kishi Aug 1995 A
5441629 Kosaki Aug 1995 A
5442416 Tateyama et al. Aug 1995 A
5443707 Mori Aug 1995 A
5445484 Kato et al. Aug 1995 A
5447615 Ishida Sep 1995 A
5454405 Hawes Oct 1995 A
5460478 Akimoto et al. Oct 1995 A
5464313 Ohsawa Nov 1995 A
5472502 Batchelder Dec 1995 A
5474807 Koshiishi Dec 1995 A
5489341 Bergman et al. Feb 1996 A
5500081 Bergman Mar 1996 A
5501768 Hermans et al. Mar 1996 A
5508095 Allum et al. Apr 1996 A
5510645 Fitch Apr 1996 A
5512319 Cook et al. Apr 1996 A
5513594 McClanahan May 1996 A
5514258 Brinket et al. May 1996 A
5516412 Andricacos et al. May 1996 A
5522975 Andricacos et al. Jun 1996 A
5527390 Ono et al. Jun 1996 A
5544421 Thompson et al. Aug 1996 A
5549808 Farooq et al. Aug 1996 A
5551986 Jain Sep 1996 A
5567267 Kazama et al. Oct 1996 A
5571325 Ueyama Nov 1996 A
5575611 Thompson et al. Nov 1996 A
5584310 Bergman Dec 1996 A
5584971 Komino Dec 1996 A
5591262 Sago Jan 1997 A
5593545 Rugowski et al. Jan 1997 A
5597460 Reynolds Jan 1997 A
5597836 Hackler et al. Jan 1997 A
5600532 Michiya et al. Feb 1997 A
5609239 Schlecker Mar 1997 A
5616069 Walker Apr 1997 A
5620581 Ang Apr 1997 A
5639206 Oda et al. Jun 1997 A
5639316 Cabral, Jr. et al. Jun 1997 A
5641613 Boff et al. Jun 1997 A
5650082 Anderson Jul 1997 A
5651823 Parodi et al. Jul 1997 A
5651836 Suzuki Jul 1997 A
5658183 Sandhu Aug 1997 A
5658387 Reardon Aug 1997 A
5660472 Peuse et al. Aug 1997 A
5660517 Thompson et al. Aug 1997 A
5662788 Sandhu Sep 1997 A
5664337 Davis et al. Sep 1997 A
5666985 Smith Sep 1997 A
5670034 Lowery Sep 1997 A
5676337 Giras et al. Oct 1997 A
5677118 Spara et al. Oct 1997 A
5677824 Harashima Oct 1997 A
5678116 Sugimoto Oct 1997 A
5678320 Thompson et al. Oct 1997 A
5681392 Swain Oct 1997 A
5683564 Reynolds Nov 1997 A
5684654 Searle et al. Nov 1997 A
5684713 Asada et al. Nov 1997 A
5700127 Harada Dec 1997 A
5700180 Sandhu Dec 1997 A
5711646 Ueda et al. Jan 1998 A
5718763 Tateyama Feb 1998 A
5719495 Moslehi Feb 1998 A
5723028 Poris Mar 1998 A
5731678 Zila et al. Mar 1998 A
5744019 Ang Apr 1998 A
5746565 Tepolt May 1998 A
5747098 Larson May 1998 A
5754842 Minagawa May 1998 A
5755948 Lazaro et al. May 1998 A
5759006 Miyamoto et al. Jun 1998 A
5762708 Motoda Jun 1998 A
5762751 Bleck Jun 1998 A
5765444 Bacchi Jun 1998 A
5765889 Nam et al. Jun 1998 A
5776327 Botts et al. Jul 1998 A
5779796 Tomoeda Jul 1998 A
5785826 Greenspan Jul 1998 A
5788829 Joshi et al. Aug 1998 A
5802856 Schaper et al. Sep 1998 A
5815762 Sakai Sep 1998 A
5829791 Kotsubo et al. Nov 1998 A
5843296 Greenspan Dec 1998 A
5845662 Sumnitsch Dec 1998 A
5860640 Marohl Jan 1999 A
5868866 Maekawa Feb 1999 A
5871626 Crafts et al. Feb 1999 A
5871805 Lemelson Feb 1999 A
5872633 Holzapfel Feb 1999 A
5882433 Ueno Mar 1999 A
5882498 Dubin et al. Mar 1999 A
5885755 Nakagawa Mar 1999 A
5892207 Kawamura et al. Apr 1999 A
5900663 Johnson May 1999 A
5904827 Reynolds May 1999 A
5908543 Matsunami et al. Jun 1999 A
5916366 Ueyama Jun 1999 A
5924058 Waldhauer Jul 1999 A
5925227 Kobayashi et al. Jul 1999 A
5932077 Reynolds Aug 1999 A
5937142 Moslehi et al. Aug 1999 A
5942035 Hasebe Aug 1999 A
5948203 Wang Sep 1999 A
5952050 Doan Sep 1999 A
5957836 Johnson Sep 1999 A
5964643 Birang Oct 1999 A
5980706 Bleck Nov 1999 A
5985126 Bleck Nov 1999 A
5989397 Laube et al. Nov 1999 A
5989406 Beetz, Jr. et al. Nov 1999 A
5997653 Yamasaka Dec 1999 A
5998123 Tanaka et al. Dec 1999 A
5999886 Martin et al. Dec 1999 A
6001235 Arken et al. Dec 1999 A
6004047 Akimoto Dec 1999 A
6004828 Hanson Dec 1999 A
6017437 Ting Jan 2000 A
6017820 Ting et al. Jan 2000 A
6025600 Archie Feb 2000 A
6027631 Broadbent Feb 2000 A
6028986 Song Feb 2000 A
6045618 Raoux Apr 2000 A
6051284 Byrne et al. Apr 2000 A
6053687 Kirkpatrick Apr 2000 A
6063190 Hasebe et al. May 2000 A
6072160 Bahl Jun 2000 A
6072163 Armstrong et al. Jun 2000 A
6074544 Reid et al. Jun 2000 A
6077412 Ting Jun 2000 A
6080288 Schwartz et al. Jun 2000 A
6080291 Woodruff et al. Jun 2000 A
6080691 Lindsay et al. Jun 2000 A
6086680 Foster et al. Jul 2000 A
6090260 Inoue et al. Jul 2000 A
6091498 Hanson Jul 2000 A
6099702 Reid Aug 2000 A
6099712 Ritzdorf Aug 2000 A
6103085 Woo et al. Aug 2000 A
6107192 Subrahmanyan et al. Aug 2000 A
6108937 Raaijmakers Aug 2000 A
6110011 Somekh Aug 2000 A
6110346 Reid et al. Aug 2000 A
6122046 Almogy Sep 2000 A
6130415 Knoot Oct 2000 A
6132289 Labunsky Oct 2000 A
6132587 Jorne et al. Oct 2000 A
6136163 Cheung Oct 2000 A
6139703 Hanson et al. Oct 2000 A
6139708 Nonomura et al. Oct 2000 A
6139712 Patton Oct 2000 A
6140234 Uzoh et al. Oct 2000 A
6143147 Jelinek Nov 2000 A
6143155 Adams Nov 2000 A
6149729 Iwata Nov 2000 A
6151532 Barone et al. Nov 2000 A
6156167 Patton et al. Dec 2000 A
6157106 Tietz et al. Dec 2000 A
6159073 Wiswesser Dec 2000 A
6159354 Contolini et al. Dec 2000 A
6162344 Reid et al. Dec 2000 A
6162488 Gevelber et al. Dec 2000 A
6168693 Uzoh Jan 2001 B1
6168695 Woodruff Jan 2001 B1
6174425 Simpson Jan 2001 B1
6174796 Takagi et al. Jan 2001 B1
6179983 Reid et al. Jan 2001 B1
6184068 Ohtani et al. Feb 2001 B1
6187072 Cheung Feb 2001 B1
6190234 Swedek et al. Feb 2001 B1
6193802 Pang Feb 2001 B1
6193859 Contolini et al. Feb 2001 B1
6194628 Pang Feb 2001 B1
6197181 Chen Mar 2001 B1
6199301 Wallace Mar 2001 B1
6201240 Dotan Mar 2001 B1
6208751 Almogy Mar 2001 B1
6218097 Bell et al. Apr 2001 B1
6221230 Takeuchi Apr 2001 B1
6228232 Woodruff May 2001 B1
6231743 Etherington May 2001 B1
6234738 Kimata May 2001 B1
6238539 Joyce May 2001 B1
6244931 Pinson Jun 2001 B1
6247998 Wiswesser et al. Jun 2001 B1
6251238 Kaufman et al. Jun 2001 B1
6251528 Uzoh et al. Jun 2001 B1
6251692 Hanson Jun 2001 B1
6254742 Hanson et al. Jul 2001 B1
6255222 Xia Jul 2001 B1
6258220 Dordi Jul 2001 B1
6261433 Landau Jul 2001 B1
6264752 Curtis Jul 2001 B1
6268289 Chowdhury Jul 2001 B1
6270619 Suzuki Aug 2001 B1
6270634 Khan Aug 2001 B1
6270647 Graham Aug 2001 B1
6277194 Thilderkvist Aug 2001 B1
6277263 Chen Aug 2001 B1
6278089 Young et al. Aug 2001 B1
6280183 Mayur et al. Aug 2001 B1
6280582 Woodruff et al. Aug 2001 B1
6280583 Woodruff et al. Aug 2001 B1
6290865 Lloyd Sep 2001 B1
6297154 Gross et al. Oct 2001 B1
6303010 Woodruff et al. Oct 2001 B1
6309520 Woodruff et al. Oct 2001 B1
6309524 Woodruff et al. Oct 2001 B1
6309981 Mayer Oct 2001 B1
6309984 Nonaka Oct 2001 B1
6318385 Curtis Nov 2001 B1
6318951 Schmidt Nov 2001 B1
6322112 Duncan Nov 2001 B1
6322677 Woodruff Nov 2001 B1
6333275 Mayer Dec 2001 B1
6342137 Woodruff Jan 2002 B1
6350319 Curtiss Feb 2002 B1
6365729 Tyagi Apr 2002 B1
6391166 Wang May 2002 B1
6399505 Nogami Jun 2002 B2
6402923 Mayer Jun 2002 B1
6409892 Woodruff et al. Jun 2002 B1
6413436 Aegerter Jul 2002 B1
6423642 Peace Jul 2002 B1
6428660 Woodruff et al. Aug 2002 B2
6428662 Woodruff et al. Aug 2002 B1
6444101 Stevens Sep 2002 B1
6471913 Weaver et al. Oct 2002 B1
6481956 Hofmeister Nov 2002 B1
6491806 Dubin Dec 2002 B1
6494221 Sellmer Dec 2002 B1
6497801 Woodruff Dec 2002 B1
6562421 Sudo May 2003 B2
6565729 Chen May 2003 B2
6569297 Wilson et al. May 2003 B2
6599412 Graham Jul 2003 B1
6623609 Harris Sep 2003 B2
6632334 Anderson Oct 2003 B2
6660137 Wilson Dec 2003 B2
6678055 Du-Nour et al. Jan 2004 B2
6699373 Woodruff Mar 2004 B2
6709562 Andricacos Mar 2004 B1
6747754 Iyoki Jun 2004 B1
6755954 Mayer et al. Jun 2004 B2
6773571 Mayer et al. Aug 2004 B1
20010024611 Woodruff Sep 2001 A1
20010032788 Woodruff Oct 2001 A1
20010043856 Woodruff Nov 2001 A1
20020008036 Wang Jan 2002 A1
20020008037 Wilson et al. Jan 2002 A1
20020022363 Ritzdorf et al. Feb 2002 A1
20020032499 Wilson Mar 2002 A1
20020046952 Graham Apr 2002 A1
20020079215 Wilson et al. Jun 2002 A1
20020096508 Weaver et al. Jul 2002 A1
20020125141 Wilson et al. Sep 2002 A1
20020139678 Wilson Oct 2002 A1
20030020928 Ritzdorf Jan 2003 A1
20030038035 Wilson Feb 2003 A1
20030062258 Woodruff Apr 2003 A1
20030066752 Ritzdorf Apr 2003 A1
20030070918 Hanson Apr 2003 A1
20030127337 Hanson Jul 2003 A1
20040031693 Chen Feb 2004 A1
20040055877 Wilson Mar 2004 A1
20040099533 Wilson May 2004 A1
Foreign Referenced Citations (65)
Number Date Country
873651 Jun 1971 CA
3240330 Oct 1982 DE
41 14 427 Nov 1992 DE
195 25 666 Oct 1996 DE
0 140 404 Aug 1984 EP
0047132 Jul 1985 EP
0 677 612 Oct 1985 EP
0 257 670 Mar 1988 EP
0 290 210 Nov 1988 EP
0290210 Nov 1988 EP
0 677 612 Oct 1995 EP
0582019 Oct 1995 EP
0544311 May 1996 EP
0 881 673 May 1998 EP
0 982 771 Aug 1999 EP
1 069 213 Jul 2000 EP
0452939 Nov 2000 EP
2217107 Mar 1989 GB
2 254 288 Mar 1992 GB
2 279 372 Jun 1994 GB
59150094 Aug 1984 JP
1048442 Feb 1989 JP
4144150 May 1992 JP
4311591 Nov 1992 JP
5146984 Jun 1993 JP
5195183 Aug 1993 JP
5211224 Aug 1993 JP
6017291 Jan 1994 JP
6073598 Mar 1994 JP
6224202 Aug 1994 JP
7113159 May 1995 JP
7197299 Aug 1995 JP
10-083960 Mar 1998 JP
11036096 Feb 1999 JP
11080993 Mar 1999 JP
WO-9000476 Jan 1990 WO
WO-9104213 Apr 1991 WO
WO-9506326 Mar 1995 WO
WO-9520064 Jul 1995 WO
WO9916936 Apr 1996 WO
WO-9916936 Apr 1996 WO
WO-9925904 May 1999 WO
WO-9925905 May 1999 WO
WO-9940615 Aug 1999 WO
WO-9941434 Aug 1999 WO
WO-9945745 Sep 1999 WO
WO-0002675 Jan 2000 WO
WO-0002808 Jan 2000 WO
WO-0002808 Jan 2000 WO
WO-0003072 Jan 2000 WO
WO-0202808 Jan 2000 WO
WO 0061498 Apr 2000 WO
WO 0061837 Apr 2000 WO
WO-0032835 Jun 2000 WO
WO-0146910 Jun 2001 WO
WO-0190434 Nov 2001 WO
WO-0191163 Nov 2001 WO
WO-0204886 Jan 2002 WO
WO-0204887 Jan 2002 WO
WO-0217203 Feb 2002 WO
WO-0245476 Jun 2002 WO
WO 0245476 Jun 2002 WO
WO-02097165 Dec 2002 WO
WO-02099165 Dec 2002 WO
WO-03018874 Mar 2003 WO
Related Publications (1)
Number Date Country
20040055877 A1 Mar 2004 US
Provisional Applications (3)
Number Date Country
60182160 Feb 2000 US
60143769 Jul 1999 US
60128055 Apr 1999 US
Continuations (2)
Number Date Country
Parent 09804696 Mar 2001 US
Child 10400186 US
Parent PCT/US00/10210 Apr 2000 US
Child 09804696 US