Zn ion implanting method of nitride semiconductor

Abstract

A method of implanting a zinc (Zn)-ion into a nitride-based semiconductor substrate, the method includes: providing a homogeneous substrate on which a gallium nitride layer is grown; placing the homogeneous substrate in a crucible in which gallium nitride powders are coated; placing the crucible into a furnace; and performing a heat treatment process, so that a Zn-ion implantation is performed under an ammoniacal atmosphere in the furnace. The method of implanting a Zn-ion into a nitride-based semiconductor substrate, which can minimize a decomposition of a gallium nitride layer during a heat treatment process at a high temperature, easily produce a p-type, and reduce contact resistance between a semiconductor and a metal electrode, is provided.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and/or other aspects and advantages of the present invention will become apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings of which:

FIG. 1 is a configuration diagram illustrating a method of implanting a zinc (Zn)-ion into a nitride-based semiconductor substrate according to an exemplary embodiment of the present invention;

FIG. 2 is a flowchart illustrating a method of implanting a Zn-ion into a nitride-based semiconductor substrate according to an exemplary embodiment of the present invention; and

FIG. 3 is a graph illustrating substrate weight decrease depending upon a heat treatment temperature and an atmosphere condition according to an exemplary embodiment of the present invention.

Claims

1. A method of implanting a zinc (Zn)-ion into a nitride-based semiconductor substrate, the method comprising: providing a homogeneous substrate on which a gallium nitride layer is grown;placing the homogeneous substrate in a crucible in which gallium nitride powders are coated;placing the crucible into a furnace; andperforming a heat treatment process, so that a Zn-ion implantation is performed under an ammoniacal atmosphere in the furnace.

2. The method of claim 1, wherein the gallium nitride powders generate a gallium nitride atmosphere within the crucible during the heat treatment process, and minimize a decomposition of the gallium nitride layer on the homogeneous substrate.

3. The method of claim 1, wherein a heat treatment temperature in the furnace is in the range of 1000° C. to 1300° C.

4. The method of claim 1, wherein a heat treatment temperature in the furnace is higher than 1300° C.

5. The method of claim 1, wherein the nitride-based semiconductor substrate is produced by mixing either one element or two elements selected from the group consisting of bivalent elements such as magnesium (Mg), nickel (Ni), beryllium (Be), cadmium (Cd), and the like, with Zn, so as to produce a p-type layer.