BESANG INC.

Organization

Beaverton, OR, US

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Patents Grantslast 30 patents

Information Patent Grant
Structures of gate contact formation for vertical transistors
- Patent number 12,218,211
- Issue date Feb 4, 2025
- BESANG, INC.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of gate contact formation for vertical transistors
- Patent number 12,191,363
- Issue date Jan 7, 2025
- BESANG, INC.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for novel three-dimensional nonvolatile memory
- Patent number 12,010,853
- Issue date Jun 11, 2024
- BESANG, INC.
- Sang-Yun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of gate contact formation for vertical transistors
- Patent number 11,978,777
- Issue date May 7, 2024
- BESANG, INC.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for novel three-dimensional nonvolatile memory
- Patent number 11,925,026
- Issue date Mar 5, 2024
- BESANG, INC.
- Sang-Yun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Structures of gate contact formation for vertical transistors
- Patent number 11,769,809
- Issue date Sep 26, 2023
- BESANG, INC.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory with 3D sense amplifier
- Patent number 11,600,309
- Issue date Mar 7, 2023
- BESANG, INC.
- Sang-Yun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Bitline structure for three-dimensional integrated circuit and meth...
- Patent number 11,424,248
- Issue date Aug 23, 2022
- BeSang Inc.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor circuit
- Patent number 8,071,438
- Issue date Dec 6, 2011
- BeSang Inc.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded semiconductor structure and method of making the same
- Patent number 8,058,142
- Issue date Nov 15, 2011
- BeSang Inc.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 8,018,058
- Issue date Sep 13, 2011
- BeSang Inc.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Methods of Gate Contact Formation for Vertical Transistors
- Publication number 20240154013
- Publication date May 9, 2024
- BeSang, Inc.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures of Gate Contact Formation for Vertical Transistors
- Publication number 20240021689
- Publication date Jan 18, 2024
- BeSang, Inc.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures for Three-Dimensional CMOS Integrated Circuit Formation
- Publication number 20230107258
- Publication date Apr 6, 2023
- BeSang, Inc.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Three-Dimensional CMOS Integrated Circuit Formation
- Publication number 20230104818
- Publication date Apr 6, 2023
- BeSang, Inc.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Novel Three-Dimensional Nonvolatile Memory
- Publication number 20220392910
- Publication date Dec 8, 2022
- BeSang, Inc.
- Sang-Yun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Structures for Novel Three-Dimensional Nonvolatile Memory
- Publication number 20220392913
- Publication date Dec 8, 2022
- BeSang, Inc.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D Memory with 3D Sense Amplifier
- Publication number 20220189515
- Publication date Jun 16, 2022
- BeSang, Inc.
- Sang-Yun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Methods of Making Novel Three-Dimensional DRAM
- Publication number 20220139920
- Publication date May 5, 2022
- BeSang, Inc.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures of Gate Contact Formation for Vertical Transistors
- Publication number 20220130973
- Publication date Apr 28, 2022
- BeSang, Inc.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Gate Contact Formation for Vertical Transistors
- Publication number 20220130963
- Publication date Apr 28, 2022
- BeSang, Inc.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20120003815
- Publication date Jan 5, 2012
- BESANG INC.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20120003808
- Publication date Jan 5, 2012
- BESANG INC.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS

Trademarklast 30 trademarks

Information Trademark
85304793 - BESANG
- Serial number 85304793
- Filing date Apr 26, 2011
- BeSang Inc.
- 9 - Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments
Information Trademark
85304838 - BESANG
- Serial number 85304838
- Filing date Apr 26, 2011
- BeSang Inc.
- 42 - Scientific and technological services and research and design relating thereto
Information Trademark
85173823 - TRUE 3D
- Serial number 85173823
- Registration number 4132698
- Filing date Nov 10, 2010
- BeSang Inc.
- 9 - Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments

BESANG INC.

Organization

Patents Grantslast 30 patents

Structures of gate contact formation for vertical transistors

Methods of gate contact formation for vertical transistors

Methods for novel three-dimensional nonvolatile memory

Methods of gate contact formation for vertical transistors

Structures for novel three-dimensional nonvolatile memory

Structures of gate contact formation for vertical transistors

3D memory with 3D sense amplifier

Bitline structure for three-dimensional integrated circuit and meth...

Semiconductor circuit

Bonded semiconductor structure and method of making the same

Semiconductor memory device

Patents Applicationslast 30 patents

Methods of Gate Contact Formation for Vertical Transistors

Structures of Gate Contact Formation for Vertical Transistors

Structures for Three-Dimensional CMOS Integrated Circuit Formation

Methods for Three-Dimensional CMOS Integrated Circuit Formation

Methods for Novel Three-Dimensional Nonvolatile Memory

Structures for Novel Three-Dimensional Nonvolatile Memory

3D Memory with 3D Sense Amplifier

Methods of Making Novel Three-Dimensional DRAM

Structures of Gate Contact Formation for Vertical Transistors

Methods of Gate Contact Formation for Vertical Transistors

SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Trademarklast 30 trademarks

85304793 - BESANG

85304838 - BESANG

85173823 - TRUE 3D