Chip Integration Tech.Co., Ltd.

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Zhubei City, TW

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Patents Grantslast 30 patents

Information Patent Grant
Structure of trench-vertical double diffused MOS transistor and met...
- Patent number 10,529,844
- Issue date Jan 7, 2020
- Chip Integration Tech. Co., Ltd.
- Qinhai Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual trench rectifier and method for forming the same
- Patent number 9,443,846
- Issue date Sep 13, 2016
- Chip Integration Tech. Co., Ltd.
- Qinhai Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a trench MOS rectifier and method of forming the same
- Patent number 9,276,096
- Issue date Mar 1, 2016
- Chip Integration Tech. Co., Ltd.
- Qinhai Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual trench rectifier and method for forming the same
- Patent number 9,117,902
- Issue date Aug 25, 2015
- Chip Integration Tech. Co., Ltd.
- Qinhai Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual trench MOS transistor and method for forming the same
- Patent number 8,907,413
- Issue date Dec 9, 2014
- Chip Integration Tech. Co., Ltd.
- Qinhai Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High switching speed two mask schottky diode with high field breakdown
- Patent number 7,491,633
- Issue date Feb 17, 2009
- Chip Integration Tech. Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide Schottky diode and method of making the same
- Patent number 7,368,371
- Issue date May 6, 2008
- Chip Integration Tech. Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode and method of making the same
- Patent number 7,078,780
- Issue date Jul 18, 2006
- Chip Integration Tech., Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode and method of making the same
- Patent number 7,064,408
- Issue date Jun 20, 2006
- Chip Integration Tech Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High switching speed two mask Schottky diode with high field breakdown
- Patent number 6,998,694
- Issue date Feb 14, 2006
- Chip Integration Tech Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two mask shottky diode with locos structure
- Patent number 6,936,905
- Issue date Aug 30, 2005
- Chip Integration Tech Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with high field breakdown and low reverse leakage cu...
- Patent number 6,825,073
- Issue date Nov 30, 2004
- Chip Integration Tech Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Structure of Trench-Vertical Double Diffused MOS Transistor and Met...
- Publication number 20160329413
- Publication date Nov 10, 2016
- Chip Integration Tech.Co., Ltd.
- QINHAI JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL TRENCH RECTIFIER AND METHOD FOR FORMING THE SAME
- Publication number 20150287720
- Publication date Oct 8, 2015
- Chip Integration Tech.Co., Ltd.
- QINHAI JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Trench Rectifier and Method for Forming the Same
- Publication number 20150035047
- Publication date Feb 5, 2015
- Chip Integration Tech.Co., Ltd.
- QINHAI JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure of a Trench MOS Rectifier and Method of Forming the Same
- Publication number 20140374790
- Publication date Dec 25, 2014
- Chip Integration Tech.Co., Ltd.
- QINHAI JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL TRENCH MOS TRANSISTOR AND METHOD FOR FORMING THE SAME
- Publication number 20140374820
- Publication date Dec 25, 2014
- Chip Integration Tech.Co., Ltd.
- QINHAI JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide Schottky diode and method of making the same
- Publication number 20070293001
- Publication date Dec 20, 2007
- Chip Integration Tech. Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High switching speed two mask schottky diode with high field breakdown
- Publication number 20070290234
- Publication date Dec 20, 2007
- Chip Integration Tech. Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming low forward voltage Shottky barrier diode with LO...
- Publication number 20070293028
- Publication date Dec 20, 2007
- Chip Integration Tech.Co.,Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier diode and method of making the same
- Publication number 20050230744
- Publication date Oct 20, 2005
- Chip Integration Tech. Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier diode and method of making the same
- Publication number 20050127464
- Publication date Jun 16, 2005
- Chip Integration Tech. Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High switching speed two mask schottky diode with high field breakdown
- Publication number 20050029614
- Publication date Feb 10, 2005
- Chip Integration Tech. Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two mask shottky barrier diode with locos structure
- Publication number 20040211974
- Publication date Oct 28, 2004
- Chip Integration Tech. Co., Ltd.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS

Chip Integration Tech.Co., Ltd.

Organization

Patents Grantslast 30 patents

Structure of trench-vertical double diffused MOS transistor and met...

Dual trench rectifier and method for forming the same

Structure of a trench MOS rectifier and method of forming the same

Dual trench rectifier and method for forming the same

Dual trench MOS transistor and method for forming the same

High switching speed two mask schottky diode with high field breakdown

Silicon carbide Schottky diode and method of making the same

Schottky barrier diode and method of making the same

Schottky barrier diode and method of making the same

High switching speed two mask Schottky diode with high field breakdown

Two mask shottky diode with locos structure

Schottky diode with high field breakdown and low reverse leakage cu...

Patents Applicationslast 30 patents

Structure of Trench-Vertical Double Diffused MOS Transistor and Met...

DUAL TRENCH RECTIFIER AND METHOD FOR FORMING THE SAME

Dual Trench Rectifier and Method for Forming the Same

Structure of a Trench MOS Rectifier and Method of Forming the Same

DUAL TRENCH MOS TRANSISTOR AND METHOD FOR FORMING THE SAME

Silicon carbide Schottky diode and method of making the same

High switching speed two mask schottky diode with high field breakdown

Method of forming low forward voltage Shottky barrier diode with LO...

Schottky barrier diode and method of making the same

Schottky barrier diode and method of making the same

High switching speed two mask schottky diode with high field breakdown

Two mask shottky barrier diode with locos structure

Trademarklast 30 trademarks