EPOWERSOFT, INC.

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San Jose, CA, US

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Patents Grantslast 30 patents

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND SYSTEM FOR JUNCTION TERMINATION IN GAN MATERIALS USING C...
- Publication number 20130161633
- Publication date Jun 27, 2013
- EPOWERSOFT, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FABRICATING EDGE TERMINATION STRUCTURES IN GA...
- Publication number 20130161634
- Publication date Jun 27, 2013
- EPOWERSOFT, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FLOATING GUARD RINGS USING SELECTIVE REGROWTH
- Publication number 20130164893
- Publication date Jun 27, 2013
- EPOWERSOFT, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION
- Publication number 20130161780
- Publication date Jun 27, 2013
- EPOWERSOFT, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GAN SELF-ALIGNED VERTICAL MESFET
- Publication number 20130161635
- Publication date Jun 27, 2013
- EPOWERSOFT, INC.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GAN VERTICAL JFET WITH SELF-ALIGNED SOURCE...
- Publication number 20130161705
- Publication date Jun 27, 2013
- EPOWERSOFT, INC.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES
- Publication number 20130153917
- Publication date Jun 20, 2013
- EPOWERSOFT, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical GaN-Based Metal Insulator Semiconductor FET
- Publication number 20130146885
- Publication date Jun 13, 2013
- EPOWERSOFT, INC.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical GaN JFET with Gate Source Electrodes on Regrown Gate
- Publication number 20130146886
- Publication date Jun 13, 2013
- EPOWERSOFT, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU SIN GROWTH TO ENABLE SCHOTTKY CONTACT FOR GAN DEVICES
- Publication number 20130143392
- Publication date Jun 6, 2013
- EPOWERSOFT, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASE...
- Publication number 20130137225
- Publication date May 30, 2013
- EPOWERSOFT, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
- Publication number 20130127006
- Publication date May 23, 2013
- EPOWERSOFT, INC.
- Madhan Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALUMINUM GALLIUM NITRIDE ETCH STOP LAYER FOR GALLIUM NITRIDE BASES...
- Publication number 20130126884
- Publication date May 23, 2013
- EPOWERSOFT, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER
- Publication number 20130126886
- Publication date May 23, 2013
- EPOWERSOFT, INC.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FABRICATING FLOATING GUARD RINGS IN GAN MATER...
- Publication number 20130126885
- Publication date May 23, 2013
- EPOWERSOFT, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge Termination by Ion Implantation in GaN
- Publication number 20130126888
- Publication date May 23, 2013
- ePowersoft, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE
- Publication number 20130112985
- Publication date May 9, 2013
- EPOWERSOFT, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED HEMT AND SCHOTTKY DIODE
- Publication number 20130087803
- Publication date Apr 11, 2013
- EPOWERSOFT, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20130087879
- Publication date Apr 11, 2013
- EPOWERSOFT, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FLOATING GUARD RINGS IN GAN MATERIALS
- Publication number 20130087835
- Publication date Apr 11, 2013
- EPOWERSOFT, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GAN MERGED P-I-N SCHOTTKY (MPS) DIODE
- Publication number 20130087878
- Publication date Apr 11, 2013
- EPOWERSOFT, INC.
- Andrew P. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE...
- Publication number 20130075748
- Publication date Mar 28, 2013
- EPOWERSOFT, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...
- Publication number 20130056743
- Publication date Mar 7, 2013
- EPOWERSOFT, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL
- Publication number 20130032812
- Publication date Feb 7, 2013
- EPOWERSOFT, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...
- Publication number 20130032814
- Publication date Feb 7, 2013
- EPOWERSOFT, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
- Publication number 20130032813
- Publication date Feb 7, 2013
- EPOWERSOFT, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN GATE
- Publication number 20130032811
- Publication date Feb 7, 2013
- EPOWERSOFT, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical Isolation Of High Defect Density Regions In A Semiconduc...
- Publication number 20130015552
- Publication date Jan 17, 2013
- EPOWERSOFT, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Lift-Off and Wafer Reuse
- Publication number 20120309172
- Publication date Dec 6, 2012
- EPOWERSOFT, INC.
- Linda T. Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled Doping in III-V Materials
- Publication number 20120248577
- Publication date Oct 4, 2012
- EPOWERSOFT INC.
- Linda T. Romano
- H01 - BASIC ELECTRIC ELEMENTS

EPOWERSOFT, INC.

Organization

Patents Grantslast 30 patents

Patents Applicationslast 30 patents

METHOD AND SYSTEM FOR JUNCTION TERMINATION IN GAN MATERIALS USING C...

METHOD AND SYSTEM FOR FABRICATING EDGE TERMINATION STRUCTURES IN GA...

FABRICATION OF FLOATING GUARD RINGS USING SELECTIVE REGROWTH

METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION

METHOD AND SYSTEM FOR A GAN SELF-ALIGNED VERTICAL MESFET

METHOD AND SYSTEM FOR A GAN VERTICAL JFET WITH SELF-ALIGNED SOURCE...

INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES

Vertical GaN-Based Metal Insulator Semiconductor FET

Vertical GaN JFET with Gate Source Electrodes on Regrown Gate

IN-SITU SIN GROWTH TO ENABLE SCHOTTKY CONTACT FOR GAN DEVICES

METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASE...

GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE

ALUMINUM GALLIUM NITRIDE ETCH STOP LAYER FOR GALLIUM NITRIDE BASES...

GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER

METHOD AND SYSTEM FOR FABRICATING FLOATING GUARD RINGS IN GAN MATER...

Edge Termination by Ion Implantation in GaN

MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE

MONOLITHICALLY INTEGRATED HEMT AND SCHOTTKY DIODE

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD AND SYSTEM FOR FLOATING GUARD RINGS IN GAN MATERIALS

METHOD OF FABRICATING A GAN MERGED P-I-N SCHOTTKY (MPS) DIODE

METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE...

METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...

METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL

METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...

METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES

METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN GATE

Electrical Isolation Of High Defect Density Regions In A Semiconduc...

Epitaxial Lift-Off and Wafer Reuse

Controlled Doping in III-V Materials

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