YIELD MICROELECTRONICS CORP.

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HSIN-CHU COUNTY, TW

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Patents Grantslast 30 patents

Information Patent Grant
Small-area side-capacitor read-only memory device, memory array and...
- Patent number 11,742,039
- Issue date Aug 29, 2023
- Yield Microelectronics Corp.
- Yu Ting Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Low-cost and low-voltage anti-fuse array
- Patent number 11,502,090
- Issue date Nov 15, 2022
- Yield Microelectronics Corp.
- Wen-Chien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Small-area and low-voltage anti-fuse element and array
- Patent number 11,424,252
- Issue date Aug 23, 2022
- Yield Microelectronics Corp.
- Wen-Chien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-voltage anti-fuse element
- Patent number 11,380,694
- Issue date Jul 5, 2022
- Yield Microelectronics Corp.
- Cheng-Ying Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Operating method of an electrically erasable programmable read only...
- Patent number 11,004,857
- Issue date May 11, 2021
- Yield Microelectronics Corp.
- Cheng-Ying Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Operating method of a low current electrically erasable programmabl...
- Patent number 10,854,297
- Issue date Dec 1, 2020
- Yield Microelectronics Corp.
- Cheng-Ying Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fast erasing low-current EEPROM array
- Patent number 10,685,716
- Issue date Jun 16, 2020
- Yield Microelectronics Corp.
- Hsin-Chang Lin
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for operating low-current EEPROM array
- Patent number 10,643,708
- Issue date May 5, 2020
- Yield Microelectronics Corp.
- Hsin-Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Low voltage difference operated EEPROM and operating method thereof
- Patent number 10,242,741
- Issue date Mar 26, 2019
- Yield Microelectronics Corp.
- Hsin-Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Erasing method of single-gate non-volatile memory
- Patent number 10,141,057
- Issue date Nov 27, 2018
- Yield Microelectronics Corp.
- Hsin-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage difference operated EEPROM and operating method thereof
- Patent number 9,601,202
- Issue date Mar 21, 2017
- Yield Microelectronics Corp.
- Hsin-Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for operating small-area EEPROM array
- Patent number 9,318,208
- Issue date Apr 19, 2016
- Yield Microelectronics Corp.
- Hsin-Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with a single gate-source common terminal and o...
- Patent number 9,281,312
- Issue date Mar 8, 2016
- Yield Microelectronics Corp.
- Hsin-Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for operating low-cost EEPROM array
- Patent number 9,240,242
- Issue date Jan 19, 2016
- Yield Microelectronics Corp.
- Hsin-Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Low-voltage EEPROM array
- Patent number 8,305,808
- Issue date Nov 6, 2012
- Yield Microelectronics Corp.
- Hsin Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Area saving electrically-erasable-programmable read-only memory (EE...
- Patent number 8,300,461
- Issue date Oct 30, 2012
- Yield Microelectronics Corp.
- Hsin Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Cost saving electrically-erasable-programmable read-only memory (EE...
- Patent number 8,300,469
- Issue date Oct 30, 2012
- Yield Microelectronics Corp.
- Hsin Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory low voltage and high speed erasure method
- Patent number 8,218,369
- Issue date Jul 10, 2012
- Yield Microelectronics Corp.
- Hsin Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge pump device and operating method thereof
- Patent number 7,508,253
- Issue date Mar 24, 2009
- Yield Microelectronics Corp.
- Cheng Ying Wu
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Single-gate non-volatile memory and operation method thereof
- Patent number 7,423,903
- Issue date Sep 9, 2008
- Yield Microelectronics Corp.
- Hsin-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile flash memory and method of operating the same
- Patent number 7,099,192
- Issue date Aug 29, 2006
- Yield Microelectronics Corp.
- Lee Zhung Wang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SMALL-AREA COMMON-VOLTAGE MULTI-WRITE NON-VOLATILE MEMORY ARRAY
- Publication number 20250017005
- Publication date Jan 9, 2025
- YIELD MICROELECTRONICS CORP.
- YU-TING HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
SMALL-AREA COMMON-VOLTAGE ANTI-FUSE ARRAY
- Publication number 20250014660
- Publication date Jan 9, 2025
- YIELD MICROELECTRONICS CORP.
- YU-TING HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
SMALL-AREA HIGH-EFFICIENCY READ-ONLY MEMORY (ROM) ARRAY AND METHOD...
- Publication number 20240260260
- Publication date Aug 1, 2024
- YIELD MICROELECTRONICS CORP.
- YU TING HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
SMALL-AREA SIDE-CAPACITOR READ-ONLY MEMORY DEVICE, MEMORY ARRAY AND...
- Publication number 20230230646
- Publication date Jul 20, 2023
- YIELD MICROELECTRONICS CORP.
- YU TING HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH WRITING RATE ANTIFUSE ARRAY
- Publication number 20230113604
- Publication date Apr 13, 2023
- YIELD MICROELECTRONICS CORP.
- YU TING HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-COST AND LOW-VOLTAGE ANTI-FUSE ARRAY
- Publication number 20220181337
- Publication date Jun 9, 2022
- YIELD MICROELECTRONICS CORP.
- WEN-CHIEN HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMALL-AREA AND LOW-VOLTAGE ANTI-FUSE ELEMENT AND ARRAY
- Publication number 20220102367
- Publication date Mar 31, 2022
- YIELD MICROELECTRONICS CORP.
- WEN-CHIEN HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-VOLTAGE ANTI-FUSE ELEMENT
- Publication number 20210242223
- Publication date Aug 5, 2021
- YIELD MICROELECTRONICS CORP.
- CHENG-YING WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPERATING METHOD OF AN ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY...
- Publication number 20210167074
- Publication date Jun 3, 2021
- YIELD MICROELECTRONICS CORP.
- CHENG-YING WU
- G11 - INFORMATION STORAGE
Information Patent Application
SINGLE-GATE MULTIPLE-TIME PROGRAMMING NON-VOLATILE MEMORY ARRAY AND...
- Publication number 20210104279
- Publication date Apr 8, 2021
- YIELD MICROELECTRONICS CORP.
- CHENG-YING WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-GATE MULTIPLE-TIME PROGRAMMING NON-VOLATILE MEMORY AND OPERA...
- Publication number 20200350328
- Publication date Nov 5, 2020
- YIELD MICROELECTRONICS CORP.
- HSIN-CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FAST ERASING AN EEPROM WITH LOW-VOLTAGES, WHERE IONS ARE...
- Publication number 20200327944
- Publication date Oct 15, 2020
- YIELD MICROELECTRONICS CORP.
- HSIN-CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR OPERATING LOW-CURRENT EEPROM ARRAY
- Publication number 20200118631
- Publication date Apr 16, 2020
- YIELD MICROELECTRONICS CORP.
- HSIN-CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF
- Publication number 20190088330
- Publication date Mar 21, 2019
- YIELD MICROELECTRONICS CORP.
- HSIN-CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF
- Publication number 20160379712
- Publication date Dec 29, 2016
- YIELD MICROELECTRONICS CORP.
- HSIN-CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF
- Publication number 20160329104
- Publication date Nov 10, 2016
- YIELD MICROELECTRONICS CORP.
- HSIN-CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH A SINGLE GATE-SOURCE COMMON TERMINAL AND O...
- Publication number 20160013194
- Publication date Jan 14, 2016
- YIELD MICROELECTRONICS CORP.
- HSIN-CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
NON-SELF-ALIGNED NON-VOLATILE MEMORY STRUCTURE
- Publication number 20130334586
- Publication date Dec 19, 2013
- YIELD MICROELECTRONICS CORP.
- HSIN CHANG LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SELF ALIGNED NON-VOLATILE MEMORY STRUCTURE
- Publication number 20130181276
- Publication date Jul 18, 2013
- YIELD MICROELECTRONICS CORP.
- HSIN CHANG LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AREA SAVING ELECTRICALLY-ERASABLE-PROGRAMMABLE READ-ONLY MEMORY (EE...
- Publication number 20120051147
- Publication date Mar 1, 2012
- YIELD MICROELECTRONICS CORP.
- HSIN CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
COST SAVING ELECTRICALLY-ERASABLE-PROGRAMMABLE READ-ONLY MEMORY (EE...
- Publication number 20120039129
- Publication date Feb 16, 2012
- YIELD MICROELECTRONICS CORP.
- HSIN CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
LOW-VOLTAGE EEPROM ARRAY
- Publication number 20120039131
- Publication date Feb 16, 2012
- YIELD MICROELECTRONICS CORP.
- HSIN-CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR INTEGRATING DRAM AND NVM
- Publication number 20120040504
- Publication date Feb 16, 2012
- YIELD MICROELECTRONICS CORP.
- HSIN CHANG LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REFERENCE CURRENT GENERATOR USED FOR PROGRAMMING AND ERASING OF NON...
- Publication number 20110286281
- Publication date Nov 24, 2011
- YIELD MICROELECTRONICS CORP.
- HSIN CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY LOW VOLTAGE AND HIGH SPEED ERASURE METHOD
- Publication number 20110182124
- Publication date Jul 28, 2011
- YIELD MICROELECTRONICS CORP.
- HSIN CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
High-speed low-voltage programming and self-convergent high-speed l...
- Publication number 20070158733
- Publication date Jul 12, 2007
- Yield Microelectronics Corp.
- Daniel Huang
- G11 - INFORMATION STORAGE

YIELD MICROELECTRONICS CORP.

Organization

Patents Grantslast 30 patents

Small-area side-capacitor read-only memory device, memory array and...

Low-cost and low-voltage anti-fuse array

Small-area and low-voltage anti-fuse element and array

Low-voltage anti-fuse element

Operating method of an electrically erasable programmable read only...

Operating method of a low current electrically erasable programmabl...

Method of fast erasing low-current EEPROM array

Method for operating low-current EEPROM array

Low voltage difference operated EEPROM and operating method thereof

Erasing method of single-gate non-volatile memory

Low voltage difference operated EEPROM and operating method thereof

Method for operating small-area EEPROM array

Non-volatile memory with a single gate-source common terminal and o...

Method for operating low-cost EEPROM array

Low-voltage EEPROM array

Area saving electrically-erasable-programmable read-only memory (EE...

Cost saving electrically-erasable-programmable read-only memory (EE...

Non-volatile memory low voltage and high speed erasure method

Charge pump device and operating method thereof

Single-gate non-volatile memory and operation method thereof

Nonvolatile flash memory and method of operating the same

Patents Applicationslast 30 patents

SMALL-AREA COMMON-VOLTAGE MULTI-WRITE NON-VOLATILE MEMORY ARRAY

SMALL-AREA COMMON-VOLTAGE ANTI-FUSE ARRAY

SMALL-AREA HIGH-EFFICIENCY READ-ONLY MEMORY (ROM) ARRAY AND METHOD...

SMALL-AREA SIDE-CAPACITOR READ-ONLY MEMORY DEVICE, MEMORY ARRAY AND...

HIGH WRITING RATE ANTIFUSE ARRAY

LOW-COST AND LOW-VOLTAGE ANTI-FUSE ARRAY

SMALL-AREA AND LOW-VOLTAGE ANTI-FUSE ELEMENT AND ARRAY

LOW-VOLTAGE ANTI-FUSE ELEMENT

OPERATING METHOD OF AN ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY...

SINGLE-GATE MULTIPLE-TIME PROGRAMMING NON-VOLATILE MEMORY ARRAY AND...

SINGLE-GATE MULTIPLE-TIME PROGRAMMING NON-VOLATILE MEMORY AND OPERA...

METHOD OF FAST ERASING AN EEPROM WITH LOW-VOLTAGES, WHERE IONS ARE...

METHOD FOR OPERATING LOW-CURRENT EEPROM ARRAY

LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF

LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF

LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF

NON-VOLATILE MEMORY WITH A SINGLE GATE-SOURCE COMMON TERMINAL AND O...

NON-SELF-ALIGNED NON-VOLATILE MEMORY STRUCTURE

NON-SELF ALIGNED NON-VOLATILE MEMORY STRUCTURE

AREA SAVING ELECTRICALLY-ERASABLE-PROGRAMMABLE READ-ONLY MEMORY (EE...

COST SAVING ELECTRICALLY-ERASABLE-PROGRAMMABLE READ-ONLY MEMORY (EE...

LOW-VOLTAGE EEPROM ARRAY

METHOD FOR INTEGRATING DRAM AND NVM

REFERENCE CURRENT GENERATOR USED FOR PROGRAMMING AND ERASING OF NON...

NON-VOLATILE MEMORY LOW VOLTAGE AND HIGH SPEED ERASURE METHOD

High-speed low-voltage programming and self-convergent high-speed l...

Trademarklast 30 trademarks