Zhuzhou CRRC Times Semiconductor Co. Ltd.

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Hunan, CN

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Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240105645
- Publication date Mar 28, 2024
- DYNEX SEMICONDUCTOR LIMITED
- Robin Adam Simpson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240105529
- Publication date Mar 28, 2024
- DYNEX SEMICONDUCTOR LIMITED
- Robin Adam Simpson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE-CONDUCTING IGBT CHIP
- Publication number 20240038878
- Publication date Feb 1, 2024
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Liheng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20230299137
- Publication date Sep 21, 2023
- DYNEX SEMICONDUCTOR LIMITED
- Chunlin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230268240
- Publication date Aug 24, 2023
- DYNEX SEMICONDUCTOR LIMITED
- Robin Adam Simpson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230260962
- Publication date Aug 17, 2023
- DYNEX SEMICONDUCTOR LIMITED
- Robin Adam Simpson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230236072
- Publication date Jul 27, 2023
- DYNEX SEMICONDUCTOR LIMITED
- Yangang Wang
- G01 - MEASURING TESTING
Information Patent Application
CELL STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND POWER SEMICOND...
- Publication number 20230006044
- Publication date Jan 5, 2023
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Yafei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELLULAR STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND SILICON CA...
- Publication number 20220406896
- Publication date Dec 22, 2022
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Xiaoping Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND CELL STRUCTURE THEREOF
- Publication number 20220406929
- Publication date Dec 22, 2022
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Yafei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER DENSITY 3D SEMICONDUCTOR MODULE PACKAGING
- Publication number 20220352137
- Publication date Nov 3, 2022
- Dynex Semiconductor Limited
- Yangang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ASYMMETRIC THICKNESS OXIDE TRENCHES
- Publication number 20220320310
- Publication date Oct 6, 2022
- Dynex Semiconductor Limited
- Luther-King Ekonde NGWENDSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC MOSFET STRUCTURES WITH ASYMMETRIC TRENCH OXIDE
- Publication number 20220320295
- Publication date Oct 6, 2022
- Dynex Semiconductor Limited
- Luther-King Ekonde NGWENDSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONDUCTING IGBT WITH CONTROLLED ANODE INJECTION
- Publication number 20220320323
- Publication date Oct 6, 2022
- Dynex Semiconductor Limited
- Luther-King Ekonde NGWENDSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT WITH A VARIATION OF TRENCH OXIDE THICKNESS REGIONS
- Publication number 20220320322
- Publication date Oct 6, 2022
- Dynex Semiconductor Limited
- Luther-King Ekonde NGWENDSON
- H01 - BASIC ELECTRIC ELEMENTS

Zhuzhou CRRC Times Semiconductor Co. Ltd.

Organization

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

REVERSE-CONDUCTING IGBT CHIP

POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

CELL STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND POWER SEMICOND...

CELLULAR STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND SILICON CA...

SILICON CARBIDE MOSFET DEVICE AND CELL STRUCTURE THEREOF

HIGH POWER DENSITY 3D SEMICONDUCTOR MODULE PACKAGING

METHOD OF FORMING ASYMMETRIC THICKNESS OXIDE TRENCHES

SIC MOSFET STRUCTURES WITH ASYMMETRIC TRENCH OXIDE

REVERSE CONDUCTING IGBT WITH CONTROLLED ANODE INJECTION

IGBT WITH A VARIATION OF TRENCH OXIDE THICKNESS REGIONS