Abhishek DUBE

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Graded superlattice structure for gate all around devices
- Patent number 12,363,971
- Issue date Jul 15, 2025
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon-phosphorous materials
- Patent number 12,338,547
- Issue date Jun 24, 2025
- Applied Materials, Inc.
- Errol Antonio C Sanchez
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial deposition chamber
- Patent number 12,324,061
- Issue date Jun 3, 2025
- Applied Materials, Inc.
- Shu-Kwan Lau
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method and apparatus for low temperature selective epitaxy in a dee...
- Patent number 12,297,559
- Issue date May 13, 2025
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective methods for fabricating devices and structures
- Patent number 11,948,796
- Issue date Apr 2, 2024
- Applied Materials, Inc.
- Yi-Chiau Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective low temperature epitaxial deposition process
- Patent number 11,843,033
- Issue date Dec 12, 2023
- Applied Materials, Inc.
- Chen-Ying Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon-phosphorous materials
- Patent number 11,649,560
- Issue date May 16, 2023
- Applied Materials, Inc.
- Errol Antonio C Sanchez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate interface engineering with doped layer
- Patent number 11,456,178
- Issue date Sep 27, 2022
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated CMOS source drain formation with advanced control
- Patent number 11,309,404
- Issue date Apr 19, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap oxidation for FinFET formation
- Patent number 11,271,097
- Issue date Mar 8, 2022
- Applied Materials, Inc.
- Steven C. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device having reduced contact...
- Patent number 11,195,923
- Issue date Dec 7, 2021
- Applied Materials, Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of making a semiconductor device, and...
- Patent number 11,152,479
- Issue date Oct 19, 2021
- Applied Materials, Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for selective epitaxy
- Patent number 10,504,723
- Issue date Dec 10, 2019
- Applied Materials, Inc.
- Xuebin Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective process for source and drain formation
- Patent number 10,276,688
- Issue date Apr 30, 2019
- Applied Materials, Inc.
- Xinyu Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for selective deposition
- Patent number 10,199,215
- Issue date Feb 5, 2019
- Applied Materials, Inc.
- Abhishek Dube
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method to enhance growth rate for selective epitaxial growth
- Patent number 10,128,110
- Issue date Nov 13, 2018
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to grow thin epitaxial films at low temperature
- Patent number 9,929,055
- Issue date Mar 27, 2018
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective process for source and drain formation
- Patent number 9,923,081
- Issue date Mar 20, 2018
- Applied Materials, Inc.
- Xinyu Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to enhance growth rate for selective epitaxial growth
- Patent number 9,881,790
- Issue date Jan 30, 2018
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of modifying epitaxial growth shape on source drain area of...
- Patent number 9,805,942
- Issue date Oct 31, 2017
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for selective deposition
- Patent number 9,768,013
- Issue date Sep 19, 2017
- Applied Materials, Inc.
- Abhishek Dube
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Halogenated dopant precursors for epitaxy
- Patent number 9,704,708
- Issue date Jul 11, 2017
- Applied Materials, Inc.
- Abhishek Dube
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method to grow thin epitaxial films at low temperature
- Patent number 9,530,638
- Issue date Dec 27, 2016
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of modifying epitaxial growth shape on source drain area of...
- Patent number 9,530,661
- Issue date Dec 27, 2016
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for increasing strain in a device
- Patent number 9,059,285
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming CMOS with close proximity stressors
- Patent number 9,041,119
- Issue date May 26, 2015
- International Business Machines Corporation
- Desmond J. Donegan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming silicon-carbon embedded source/drain junctions with high su...
- Patent number 8,927,375
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost flowable dielectric films
- Patent number 8,889,566
- Issue date Nov 18, 2014
- Applied Materials, Inc.
- Amit Chatterjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing strain-inducing materials in CMOS circuits in a...
- Patent number 8,779,525
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth of silicon doped with carbon and phosphorus using...
- Patent number 8,685,845
- Issue date Apr 1, 2014
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTI-FLOW METHODS, AND RELATED APPARATUS, FOR SEMICONDUCTOR MANUFA...
- Publication number 20250149349
- Publication date May 8, 2025
- Applied Materials, Inc.
- Zuoming ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FLOW GAS CIRCUITS, PROCESSING CHAMBERS, AND RELATED APPARATUS...
- Publication number 20250146134
- Publication date May 8, 2025
- Applied Materials, Inc.
- Zuoming ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR ANISOTROPIC FILM GROWTH, AND RELATED DEVICES
- Publication number 20250132154
- Publication date Apr 24, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
CHAMBER KITS, PROCESSING CHAMBERS, AND METHODS FOR GAS ACTIVATION I...
- Publication number 20250118576
- Publication date Apr 10, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF STRAINED Si/SiGe SUPERLATTICE
- Publication number 20250037997
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Ruiying HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-TEMPERATURE SELECTIVE EPITAXY CONTACT APPROACH
- Publication number 20240363354
- Publication date Oct 31, 2024
- Applied Materials, Inc.
- He REN
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCED STRAIN HETEROEPITAXY ASSEMBLY FOR THREE-DIMENSIONAL DEVICE...
- Publication number 20240347602
- Publication date Oct 17, 2024
- Applied Materials, Inc.
- Fredrick FISHBURN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE CO-FLOW EPITAXIAL DEPOSITION PROCESS
- Publication number 20240145240
- Publication date May 2, 2024
- Applied Materials, Inc.
- Chen-Ying WU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER
- Publication number 20240145550
- Publication date May 2, 2024
- Applied Materials, Inc.
- Jason JEWELL
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS OF CORRELATING ZONES OF PROCESSING CHAMBERS, AND RELATED SY...
- Publication number 20240141498
- Publication date May 2, 2024
- Applied Materials, Inc.
- Zuoming ZHU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUBSTRATE MODIFICATION FOR SUPERLATTICE CRITICAL THICKNESS IMPROVEMENT
- Publication number 20240038531
- Publication date Feb 1, 2024
- Applied Materials, Inc.
- Thomas KIRSCHENHEITER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BATCH PROCESSING APPARATUS, SYSTEMS, AND RELATED METHODS AND STRUCT...
- Publication number 20240018688
- Publication date Jan 18, 2024
- Applied Materials, Inc.
- Errol Antonio C. SANCHEZ
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GRADED SUPERLATTICE STRUCTURE FOR GATE ALL AROUND DEVICES
- Publication number 20230420521
- Publication date Dec 28, 2023
- Applied Materials, Inc.
- Yi-Chiau HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICON-PHOSPHOROUS MATERIALS
- Publication number 20230243068
- Publication date Aug 3, 2023
- Applied Materials, Inc.
- Errol Antonio C Sanchez
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR LOW TEMPERATURE SELECTIVE EPITAXY IN A DEE...
- Publication number 20230036426
- Publication date Feb 2, 2023
- Applied Materials, Inc.
- Abhishek DUBE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
AXISYMMETRIC HEATING ASSEMBLY LAYOUT WITH DOUBLE ENDED LAMP
- Publication number 20220397706
- Publication date Dec 15, 2022
- Applied Materials, Inc.
- Shu-Kwan LAU
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
ANISOTROPIC EPITAXIAL GROWTH
- Publication number 20220319844
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Chia Cheng CHIN
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL DEPOSITION CHAMBER
- Publication number 20220322492
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Shu-Kwan LAU
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
SELECTIVE METHODS FOR FABRICATING DEVICES AND STRUCTURES
- Publication number 20220310390
- Publication date Sep 29, 2022
- Yi-Chiau HUANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELECTIVE LOW TEMPERATURE EPITAXIAL DEPOSITION PROCESS
- Publication number 20220238650
- Publication date Jul 28, 2022
- Applied Materials, Inc.
- Chen-Ying WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated CMOS Source Drain Formation With Advanced Control
- Publication number 20220199804
- Publication date Jun 23, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...
- Publication number 20220093749
- Publication date Mar 24, 2022
- Applied Materials, Inc.
- Gaurav THAREJA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE INTERFACE ENGINEERING WITH DOPED LAYER
- Publication number 20210398814
- Publication date Dec 23, 2021
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP OXIDATION FOR FINFET FORMATION
- Publication number 20210134986
- Publication date May 6, 2021
- Applied Materials, Inc.
- Steven C. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICON-PHOSPHOROUS MATERIALS
- Publication number 20200399784
- Publication date Dec 24, 2020
- Applied Materials, Inc.
- Errol Antonio C Sanchez
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MAKING A SEMICONDUCTOR DEVICE, AND...
- Publication number 20200258997
- Publication date Aug 13, 2020
- Applied Materials, Inc.
- Gaurav THAREJA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...
- Publication number 20200203490
- Publication date Jun 25, 2020
- Applied Materials, Inc.
- Gaurav THAREJA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR SILICON-GERMANIUM PRE-CLEAN
- Publication number 20200144397
- Publication date May 7, 2020
- Applied Materials, Inc.
- Abhishek DUBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods Of Forming Silicon-Containing Layers
- Publication number 20200075332
- Publication date Mar 5, 2020
- Applied Materials, Inc.
- Johanes F. Swenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated CMOS Source Drain Formation With Advanced Control
- Publication number 20200013878
- Publication date Jan 9, 2020
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS

Abhishek DUBE

Person

Patents Grantslast 30 patents

Graded superlattice structure for gate all around devices

Method for forming silicon-phosphorous materials

Epitaxial deposition chamber

Method and apparatus for low temperature selective epitaxy in a dee...

Selective methods for fabricating devices and structures

Selective low temperature epitaxial deposition process

Method for forming silicon-phosphorous materials

Gate interface engineering with doped layer

Integrated CMOS source drain formation with advanced control

Cap oxidation for FinFET formation

Method of fabricating a semiconductor device having reduced contact...

Semiconductor device, method of making a semiconductor device, and...

Method and apparatus for selective epitaxy

Selective process for source and drain formation

Apparatus and method for selective deposition

Method to enhance growth rate for selective epitaxial growth

Method to grow thin epitaxial films at low temperature

Selective process for source and drain formation

Method to enhance growth rate for selective epitaxial growth

Method of modifying epitaxial growth shape on source drain area of...

Apparatus and method for selective deposition

Halogenated dopant precursors for epitaxy

Method to grow thin epitaxial films at low temperature

Method of modifying epitaxial growth shape on source drain area of...

Structure and method for increasing strain in a device

Forming CMOS with close proximity stressors

Forming silicon-carbon embedded source/drain junctions with high su...

Low cost flowable dielectric films

Method for growing strain-inducing materials in CMOS circuits in a...

Epitaxial growth of silicon doped with carbon and phosphorus using...

Patents Applicationslast 30 patents

MULTI-FLOW METHODS, AND RELATED APPARATUS, FOR SEMICONDUCTOR MANUFA...

MULTI-FLOW GAS CIRCUITS, PROCESSING CHAMBERS, AND RELATED APPARATUS...

METHODS AND APPARATUS FOR ANISOTROPIC FILM GROWTH, AND RELATED DEVICES

CHAMBER KITS, PROCESSING CHAMBERS, AND METHODS FOR GAS ACTIVATION I...

EPITAXIAL GROWTH OF STRAINED Si/SiGe SUPERLATTICE

LOW-TEMPERATURE SELECTIVE EPITAXY CONTACT APPROACH

REDUCED STRAIN HETEROEPITAXY ASSEMBLY FOR THREE-DIMENSIONAL DEVICE...

LOW TEMPERATURE CO-FLOW EPITAXIAL DEPOSITION PROCESS

CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER

METHODS OF CORRELATING ZONES OF PROCESSING CHAMBERS, AND RELATED SY...

SUBSTRATE MODIFICATION FOR SUPERLATTICE CRITICAL THICKNESS IMPROVEMENT

BATCH PROCESSING APPARATUS, SYSTEMS, AND RELATED METHODS AND STRUCT...

GRADED SUPERLATTICE STRUCTURE FOR GATE ALL AROUND DEVICES

METHOD FOR FORMING SILICON-PHOSPHOROUS MATERIALS

METHOD AND APPARATUS FOR LOW TEMPERATURE SELECTIVE EPITAXY IN A DEE...

AXISYMMETRIC HEATING ASSEMBLY LAYOUT WITH DOUBLE ENDED LAMP

ANISOTROPIC EPITAXIAL GROWTH

EPITAXIAL DEPOSITION CHAMBER

SELECTIVE METHODS FOR FABRICATING DEVICES AND STRUCTURES

SELECTIVE LOW TEMPERATURE EPITAXIAL DEPOSITION PROCESS

Integrated CMOS Source Drain Formation With Advanced Control

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...

GATE INTERFACE ENGINEERING WITH DOPED LAYER

CAP OXIDATION FOR FINFET FORMATION

METHOD FOR FORMING SILICON-PHOSPHOROUS MATERIALS

SEMICONDUCTOR DEVICE, METHOD OF MAKING A SEMICONDUCTOR DEVICE, AND...

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...

METHODS AND APPARATUS FOR SILICON-GERMANIUM PRE-CLEAN

Methods Of Forming Silicon-Containing Layers

Integrated CMOS Source Drain Formation With Advanced Control