Akihiko Osawa

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Power MOS transistor having trench gate
- Patent number 7,227,223
- Issue date Jun 5, 2007
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having vertical metal insulator semiconductor...
- Patent number 6,995,426
- Issue date Feb 7, 2006
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,740,931
- Issue date May 25, 2004
- Kabushiki Kaisha Toshiba
- Shigeo Kouzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,627,499
- Issue date Sep 30, 2003
- Kabushiki Kaisha Toshiba
- Akihiko Osawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,501,129
- Issue date Dec 31, 2002
- Kabushiki Kaisha Toshiba
- Akihiko Osawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor gate trench with covered open ends
- Patent number 6,239,464
- Issue date May 29, 2001
- Kabushiki Kaisha Toshiba
- Masanobu Tsuchitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device having high breakdown voltage and method of manufactur...
- Patent number 6,084,263
- Issue date Jul 4, 2000
- Kabushiki Kaisha Toshiba
- Masanobu Tsuchitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,060,747
- Issue date May 9, 2000
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same with stab...
- Patent number 6,031,276
- Issue date Feb 29, 2000
- Kabushiki Kaisha Toshiba
- Akihiko Osawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor bonded substrate
- Patent number 6,010,950
- Issue date Jan 4, 2000
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,731,637
- Issue date Mar 24, 1998
- Kabushiki Kaisha Toshiba
- Shizue Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET and process of fabricating the same
- Patent number 5,578,508
- Issue date Nov 26, 1996
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of increasing device breakdown volt...
- Patent number 5,554,872
- Issue date Sep 10, 1996
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device by forming at least...
- Patent number 5,250,446
- Issue date Oct 5, 1993
- Kabushiki Kaisha Toshiba
- Akihiko Osawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with overvoltage protective function
- Patent number 5,243,205
- Issue date Sep 7, 1993
- Kabushiki Kaisha Toshiba
- Mitsuhiko Kitagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of production of vertical MOS transistor
- Patent number 5,242,845
- Issue date Sep 7, 1993
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOS transistor and its production method
- Patent number 5,126,807
- Issue date Jun 30, 1992
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectrically isolated structure for use in soi-type semiconductor...
- Patent number 5,126,817
- Issue date Jun 30, 1992
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making complete dielectric isolation structure in semicon...
- Patent number 5,084,408
- Issue date Jan 28, 1992
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a semiconductive protection layer
- Patent number 5,029,324
- Issue date Jul 2, 1991
- Kabushiki Kaisha Toshiba
- Akihiko Osawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded substrate of semiconductor elements having a high withstand...
- Patent number 4,984,052
- Issue date Jan 8, 1991
- Kabushiki Kaisha Toshiba
- Yutaka Koshino
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR WAFER HOLDER
- Publication number 20170044686
- Publication date Feb 16, 2017
- Kabushiki Kaisha Toshiba
- Shinya Higashi
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR WAFER HOLDER
- Publication number 20140283748
- Publication date Sep 25, 2014
- KABUSHIKI KAISHA TOSHIBA
- Shinya Higashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor device having vertical metal insulator semiconductor...
- Publication number 20060145290
- Publication date Jul 6, 2006
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040016962
- Publication date Jan 29, 2004
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOS transistor having trench gate
- Publication number 20040012051
- Publication date Jan 22, 2004
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040012038
- Publication date Jan 22, 2004
- Shigeo Kouzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having vertical metal insulator semiconductor...
- Publication number 20030122222
- Publication date Jul 3, 2003
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20020130359
- Publication date Sep 19, 2002
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS

Akihiko Osawa

Person

Patents Grantslast 30 patents

Power MOS transistor having trench gate

Semiconductor device having vertical metal insulator semiconductor...

Semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor gate trench with covered open ends

Power device having high breakdown voltage and method of manufactur...

Semiconductor device

Semiconductor device and method of manufacturing the same with stab...

Method of manufacturing semiconductor bonded substrate

Semiconductor device

Vertical power MOSFET and process of fabricating the same

Semiconductor device and method of increasing device breakdown volt...

Method of manufacturing a semiconductor device by forming at least...

Semiconductor device with overvoltage protective function

Method of production of vertical MOS transistor

Vertical MOS transistor and its production method

Dielectrically isolated structure for use in soi-type semiconductor...

Method of making complete dielectric isolation structure in semicon...

Semiconductor device having a semiconductive protection layer

Bonded substrate of semiconductor elements having a high withstand...

Patents Applicationslast 30 patents

SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR WAFER HOLDER

SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR WAFER HOLDER

Semiconductor device having vertical metal insulator semiconductor...

Semiconductor device

Power MOS transistor having trench gate

Semiconductor device

Semiconductor device having vertical metal insulator semiconductor...

Semiconductor device and method of manufacturing the same