Ako Hatano

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number RE38805
- Issue date Oct 4, 2005
- Kabushiki Kaisha Toshiba
- Yasuo Ohba
- 257 - Active solid-state devices
Information Patent Grant
Semiconductor light-emitting diode having a p-type semiconductor la...
- Patent number 5,998,810
- Issue date Dec 7, 1999
- Kabushiki Kaisha Toshiba
- Ako Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 5,929,466
- Issue date Jul 27, 1999
- Kabushiki Kaisha Toshiba
- Yasuo Ohba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including quaternary buffer layer with pinholes
- Patent number 5,909,040
- Issue date Jun 1, 1999
- Kabushiki Kaisha Toshiba
- Yasuo Ohba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 5,740,192
- Issue date Apr 14, 1998
- Kabushiki Kaisha Toshiba
- Ako Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor heterojunction device with ALN buffer layer of 3nm-10...
- Patent number 5,656,832
- Issue date Aug 12, 1997
- Kabushiki Kaisha Toshiba
- Yasuo Ohba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser and method for manufacturing the same
- Patent number 5,617,438
- Issue date Apr 1, 1997
- Kabushiki Kaisha Toshiba
- Ako Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semicondutor light-emitting device
- Patent number 5,432,808
- Issue date Jul 11, 1995
- Kabushiki Kaisha Toshiba
- Ako Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device with InGaAlp
- Patent number 5,317,167
- Issue date May 31, 1994
- Kabushiki Kaisha Toshiba
- Toshihide Izumiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase growth method of forming film in process of manufacturi...
- Patent number 5,273,933
- Issue date Dec 28, 1993
- Kabushiki Kaisha Toshiba
- Ako Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device with InGaAlP
- Patent number 5,235,194
- Issue date Aug 10, 1993
- Kabushiki Kaisha Toshiba
- Toshihide Izumiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method of fabricating the same
- Patent number 5,103,271
- Issue date Apr 7, 1992
- Kabushiki Kaisha Toshiba
- Toshihide Izumiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing III-IV group compound semiconductor device
- Patent number 5,079,184
- Issue date Jan 7, 1992
- Kabushiki Kaisha Toshiba
- Ako Hatano
- B82 - NANO-TECHNOLOGY
Information Patent Grant
AlGaN compound semiconductor material
- Patent number 5,076,860
- Issue date Dec 31, 1991
- Kabushiki Kaisha Toshiba
- Yasuo Ohba
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser using five-element compound semiconductor
- Patent number 5,042,043
- Issue date Aug 20, 1991
- Kabushiki Kaisha Toshiba
- Ako Hatano
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light-emitting diode and method of manufacturing the...
- Patent number 5,005,057
- Issue date Apr 2, 1991
- Kabushiki Kaisha Toshiba
- Toshihide Izumiya
- B82 - NANO-TECHNOLOGY

Person

Patents Grantslast 30 patents

Semiconductor device and method of fabricating the same

Semiconductor light-emitting diode having a p-type semiconductor la...

Semiconductor device and method of fabricating the same

Semiconductor device including quaternary buffer layer with pinholes

Semiconductor laser

Semiconductor heterojunction device with ALN buffer layer of 3nm-10...

Semiconductor laser and method for manufacturing the same

Compound semicondutor light-emitting device

Semiconductor light-emitting device with InGaAlp

Vapor phase growth method of forming film in process of manufacturi...

Semiconductor light-emitting device with InGaAlP

Semiconductor light emitting device and method of fabricating the same

Method of manufacturing III-IV group compound semiconductor device

AlGaN compound semiconductor material

Semiconductor laser using five-element compound semiconductor

Semiconductor light-emitting diode and method of manufacturing the...