Number | Date | Country | Kind |
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3-181411 | Jul 1991 | JPX |
Number | Name | Date | Kind |
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4569855 | Matsuda et al. | Feb 1986 |
Entry |
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Extended Abstracts (The 38th Spring Meeting, 1991); The Japan Society of Applied Physics and Related Societies 29p-V-13; R. Ishihara et al. "Low Temperature CVD of SiN using new source gas (Hydrogen Azide)" (date unknown). |
Journal of Crystal Growth 107 (1991) 376-380; K. L. Ho et al., "MOVPE of AlN and GaN by using novel precursors". |