Alexander Lidow

Person

Santa Monica, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit with multiple gallium nitride transistor sets
- Patent number 11,050,339
- Issue date Jun 29, 2021
- Efficient Power Conversion Corporation
- David C. Reusch
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor devices with back surface isolation
- Patent number 10,600,674
- Issue date Mar 24, 2020
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gallium nitride based DC-DC converter
- Patent number 10,601,300
- Issue date Mar 24, 2020
- Efficient Power Conversion Corporation
- David C. Reusch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN transistors with polysilicon layers used for creating additiona...
- Patent number 10,312,260
- Issue date Jun 4, 2019
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate with self-aligned ledge for enhancement mode GaN transistors
- Patent number 10,312,335
- Issue date Jun 4, 2019
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with back surface isolation
- Patent number 10,312,131
- Issue date Jun 4, 2019
- Efficient Power Converson Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN transistors with polysilicon layers used for creating additiona...
- Patent number 9,837,438
- Issue date Dec 5, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate with self-aligned ledged for enhancement mode GaN transistors
- Patent number 9,748,347
- Issue date Aug 29, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with matching threshold voltages and method for...
- Patent number 9,583,480
- Issue date Feb 28, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN device with reduced output capacitance and process for making same
- Patent number 9,331,191
- Issue date May 3, 2016
- Efficient Power Conversion Corporation
- Stephen L. Colino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN transistors with polysilicon layers for creating additional com...
- Patent number 9,214,461
- Issue date Dec 15, 2015
- Efficient Power Coversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with matching threshold voltages and method for...
- Patent number 9,214,399
- Issue date Dec 15, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate self-aligned isolation in gallium nitride devic...
- Patent number 9,214,528
- Issue date Dec 15, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure in gallium nitride devices and integrated circuits
- Patent number 9,171,911
- Issue date Oct 27, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode gallium nitride transistor with improved gate char...
- Patent number 8,969,918
- Issue date Mar 3, 2015
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode GaN HEMT device
- Patent number 8,890,168
- Issue date Nov 18, 2014
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implanted and self aligned gate structure for GaN transistors
- Patent number 8,853,749
- Issue date Oct 7, 2014
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode GaN HEMT device with gate spacer and method for fa...
- Patent number 8,823,012
- Issue date Sep 2, 2014
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bumped, self-isolated GaN transistor chip with electrically isolate...
- Patent number 8,785,974
- Issue date Jul 22, 2014
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back diffusion suppression structures
- Patent number 8,436,398
- Issue date May 7, 2013
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode GaN HEMT device and method for fabricating the same
- Patent number 8,404,508
- Issue date Mar 26, 2013
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid semiconductor device having a GaN transistor and a silicon M...
- Patent number 8,368,120
- Issue date Feb 5, 2013
- International Rectifier Corporation
- Alexander Lidow
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Compensated gate MISFET and method for fabricating the same
- Patent number 8,350,294
- Issue date Jan 8, 2013
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid semiconductor device
- Patent number 8,017,978
- Issue date Sep 13, 2011
- International Rectifier Corporation
- Alexander Lidow
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Ultra thin FET
- Patent number 7,955,969
- Issue date Jun 7, 2011
- International Rectifier Corporation
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power MOSFET with low on-resistance and high breakdown voltage
- Patent number 5,742,087
- Issue date Apr 21, 1998
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power MOSFET with low on-resistance and high breakdown voltage
- Patent number 5,598,018
- Issue date Jan 28, 1997
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power MOSFET with low on-resistance and high breakdown voltage
- Patent number 5,338,961
- Issue date Aug 16, 1994
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power MOSFET with low on-resistance and high breakdown voltage
- Patent number 5,191,396
- Issue date Mar 2, 1993
- International Rectifier Corp.
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plural polygon source pattern for mosfet
- Patent number 5,130,767
- Issue date Jul 14, 1992
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER
- Publication number 20240413205
- Publication date Dec 12, 2024
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DEVICE WITH HOLE ELIMINATION CENTERS
- Publication number 20240274681
- Publication date Aug 15, 2024
- Efficient Power Conversion Corporation
- Robert Strittmatter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DEVICE WITH UNIFORM ELECTRIC FIELD
- Publication number 20240234521
- Publication date Jul 11, 2024
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH MULTIPLE GALLIUM NITRIDE TRANSISTOR SETS
- Publication number 20200195122
- Publication date Jun 18, 2020
- Efficient Power Conversion Corporation
- David C. Reusch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
- Publication number 20190252238
- Publication date Aug 15, 2019
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED GALLIUM NITRIDE BASED DC-DC CONVERTER
- Publication number 20180337588
- Publication date Nov 22, 2018
- Efficient Power Conversion Corporation
- David C. Reusch
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
GaN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...
- Publication number 20170330898
- Publication date Nov 16, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE WITH SELF-ALIGNED LEDGE FOR ENHANCEMENT MODE GaN TRANSISTORS
- Publication number 20170317179
- Publication date Nov 2, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
- Publication number 20170162429
- Publication date Jun 8, 2017
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE WITH SELF-ALIGNED LEDGED FOR ENHANCEMENT MODE GaN TRANSISTORS
- Publication number 20170047414
- Publication date Feb 16, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...
- Publication number 20160111416
- Publication date Apr 21, 2016
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...
- Publication number 20160086980
- Publication date Mar 24, 2016
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE WITH SELF-ALIGNED LEDGED FOR ENHANCEMENT MODE GaN TRANSISTORS
- Publication number 20160035847
- Publication date Feb 4, 2016
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...
- Publication number 20150034962
- Publication date Feb 5, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COM...
- Publication number 20150028384
- Publication date Jan 29, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
- Publication number 20150008442
- Publication date Jan 8, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVIC...
- Publication number 20150011057
- Publication date Jan 8, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE GaN HEMT DEVICE
- Publication number 20130234153
- Publication date Sep 12, 2013
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
- Publication number 20120193688
- Publication date Aug 2, 2012
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FA...
- Publication number 20120175631
- Publication date Jul 12, 2012
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
- Publication number 20120153300
- Publication date Jun 21, 2012
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid Semiconductor Device Having a GaN Transistor and a Silicon M...
- Publication number 20120043553
- Publication date Feb 23, 2012
- International Rectifier Corporation
- Alexander Lidow
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
VIA STRUCTURE OF A SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING...
- Publication number 20110248283
- Publication date Oct 13, 2011
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR WITH IMPROVED GATE CHAR...
- Publication number 20100258842
- Publication date Oct 14, 2010
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUMPED, SELF-ISOLATED GaN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATE...
- Publication number 20100258844
- Publication date Oct 14, 2010
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK DIFFUSION SUPPRESSION STRUCTURES
- Publication number 20100258841
- Publication date Oct 14, 2010
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
- Publication number 20100258848
- Publication date Oct 14, 2010
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE GaN HEMT DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20100258843
- Publication date Oct 14, 2010
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid semiconductor device
- Publication number 20070210333
- Publication date Sep 13, 2007
- International Rectifier Corp.
- Alexander Lidow
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
ULTRA THIN FET
- Publication number 20070082480
- Publication date Apr 12, 2007
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS

Alexander Lidow

Person

Patents Grantslast 30 patents

Integrated circuit with multiple gallium nitride transistor sets

Semiconductor devices with back surface isolation

Integrated gallium nitride based DC-DC converter

GaN transistors with polysilicon layers used for creating additiona...

Gate with self-aligned ledge for enhancement mode GaN transistors

Semiconductor devices with back surface isolation

GaN transistors with polysilicon layers used for creating additiona...

Gate with self-aligned ledged for enhancement mode GaN transistors

Integrated circuit with matching threshold voltages and method for...

GaN device with reduced output capacitance and process for making same

GaN transistors with polysilicon layers for creating additional com...

Integrated circuit with matching threshold voltages and method for...

Method to fabricate self-aligned isolation in gallium nitride devic...

Isolation structure in gallium nitride devices and integrated circuits

Enhancement mode gallium nitride transistor with improved gate char...

Enhancement mode GaN HEMT device

Ion implanted and self aligned gate structure for GaN transistors

Enhancement mode GaN HEMT device with gate spacer and method for fa...

Bumped, self-isolated GaN transistor chip with electrically isolate...

Back diffusion suppression structures

Enhancement mode GaN HEMT device and method for fabricating the same

Hybrid semiconductor device having a GaN transistor and a silicon M...

Compensated gate MISFET and method for fabricating the same

Hybrid semiconductor device

Ultra thin FET

High power MOSFET with low on-resistance and high breakdown voltage

High power MOSFET with low on-resistance and high breakdown voltage

High power MOSFET with low on-resistance and high breakdown voltage

High power MOSFET with low on-resistance and high breakdown voltage

Plural polygon source pattern for mosfet

Patents Applicationslast 30 patents

GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER

GaN DEVICE WITH HOLE ELIMINATION CENTERS

GaN DEVICE WITH UNIFORM ELECTRIC FIELD

INTEGRATED CIRCUIT WITH MULTIPLE GALLIUM NITRIDE TRANSISTOR SETS

SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION

INTEGRATED GALLIUM NITRIDE BASED DC-DC CONVERTER

GaN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...

GATE WITH SELF-ALIGNED LEDGE FOR ENHANCEMENT MODE GaN TRANSISTORS

SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION

GATE WITH SELF-ALIGNED LEDGED FOR ENHANCEMENT MODE GaN TRANSISTORS

INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...

GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...

GATE WITH SELF-ALIGNED LEDGED FOR ENHANCEMENT MODE GaN TRANSISTORS

INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...

GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COM...

ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS

METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVIC...

ENHANCEMENT MODE GaN HEMT DEVICE

ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS

ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FA...

SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION

Hybrid Semiconductor Device Having a GaN Transistor and a Silicon M...

VIA STRUCTURE OF A SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING...

ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR WITH IMPROVED GATE CHAR...

BUMPED, SELF-ISOLATED GaN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATE...

BACK DIFFUSION SUPPRESSION STRUCTURES

COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME

ENHANCEMENT MODE GaN HEMT DEVICE AND METHOD FOR FABRICATING THE SAME

Hybrid semiconductor device

ULTRA THIN FET