Alexei Sadovnikov

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Laterally diffused metal-oxide semiconductor (LDMOS) transistor wit...
- Patent number 12,243,939
- Issue date Mar 4, 2025
- Texas Instruments Incorporated
- Gang Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
False collectors and guard rings for semiconductor devices
- Patent number 12,218,190
- Issue date Feb 4, 2025
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor doped region with biased isolated members
- Patent number 12,211,807
- Issue date Jan 28, 2025
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost, high performance analog metal oxide semiconductor transistor
- Patent number 12,136,625
- Issue date Nov 5, 2024
- Texas Instruments Incorporated
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistor having thick gate oxide and STI and method of fabri...
- Patent number 12,113,128
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
False collectors and guard rings for semiconductor devices
- Patent number 12,015,054
- Issue date Jun 18, 2024
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon, nitrogen and/or fluorine co-implants for low resistance tra...
- Patent number 12,015,057
- Issue date Jun 18, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical deep trench and deep trench island based deep n-type well...
- Patent number 11,869,986
- Issue date Jan 9, 2024
- Texas Instruments Incorporated
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor doped region with biased isolated members
- Patent number 11,830,830
- Issue date Nov 28, 2023
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having an emitter region with a silicide spaced apart fr...
- Patent number 11,791,405
- Issue date Oct 17, 2023
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with constricted collector region havin...
- Patent number 11,588,019
- Issue date Feb 21, 2023
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor with folded channel and folded drift region
- Patent number 11,527,617
- Issue date Dec 13, 2022
- Texas Instruments Incorporated
- Sheldon Douglas Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with biased structure between base and...
- Patent number 11,469,315
- Issue date Oct 11, 2022
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with constricted collector region havin...
- Patent number 11,217,665
- Issue date Jan 4, 2022
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with deep trench isolation and trench capacitor
- Patent number 11,195,958
- Issue date Dec 7, 2021
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extended transistor
- Patent number 11,152,505
- Issue date Oct 19, 2021
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating transistors with implanting dopants at first and second...
- Patent number 11,094,806
- Issue date Aug 17, 2021
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with high-k drain STI dielectric
- Patent number 11,081,558
- Issue date Aug 3, 2021
- Texas Instruments Incorporated
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistor having thick gate oxide and STI and method of fabri...
- Patent number 11,049,967
- Issue date Jun 29, 2021
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with resurf region biasing under buried insulato...
- Patent number 11,024,649
- Issue date Jun 1, 2021
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor with folded channel and folded drift region
- Patent number 10,978,559
- Issue date Apr 13, 2021
- Texas Instruments Incorporated
- Sheldon Douglas Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sinker to buried layer connection region for narrow deep trenches
- Patent number 10,886,160
- Issue date Jan 5, 2021
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with deep trench isolation and trench capacitor
- Patent number 10,811,543
- Issue date Oct 20, 2020
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with resurf region biasing under buried insulato...
- Patent number 10,636,815
- Issue date Apr 28, 2020
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with high-k drain STI dielectric
- Patent number 10,593,773
- Issue date Mar 17, 2020
- Texas Instruments Incorporated
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual deep trenches for high voltage isolation
- Patent number 10,580,775
- Issue date Mar 3, 2020
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated JFET structure with implanted backgate
- Patent number 10,522,663
- Issue date Dec 31, 2019
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with resurf region biasing under buried insulato...
- Patent number 10,504,921
- Issue date Dec 10, 2019
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating the high voltage complementary BJT with lateral...
- Patent number 10,269,895
- Issue date Apr 23, 2019
- Texas Instruments Incorporated
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving lateral BJT characteristics in BCD technology
- Patent number 10,224,402
- Issue date Mar 5, 2019
- Texas Instruments Incorporated
- Natalia Lavrovskaya
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH LATERALLY DIFFUSED METAL OXIDE SEMIC...
- Publication number 20250113591
- Publication date Apr 3, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A HIGH K FIELD RELIEF DIELECTRIC STRUCTURE
- Publication number 20250040179
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR
- Publication number 20250031445
- Publication date Jan 23, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES
- Publication number 20240290831
- Publication date Aug 29, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Alexei SADOVNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON, NITROGEN AND/OR FLUORINE CO-IMPLANTS FOR LOW RESISTANCE TRA...
- Publication number 20240290844
- Publication date Aug 29, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BREAKDOWN DIODES AND METHODS OF MAKING THE SAME
- Publication number 20240222527
- Publication date Jul 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS
- Publication number 20240178318
- Publication date May 30, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Martin B. Mollat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MERGED TRENCHES SURROUNDED BY WIDER TRENCH FOR ISOLATING SEMICONDUC...
- Publication number 20240145293
- Publication date May 2, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Hao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DEEP TRENCH AND DEEP TRENCH ISLAND BASED DEEP N-TYPE WELL...
- Publication number 20240088305
- Publication date Mar 14, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DOPED REGION WITH BIASED ISOLATED MEMBERS
- Publication number 20240047387
- Publication date Feb 8, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIE SIZE REDUCTION AND DEEP TRENCH DENSITY INCREASE USING DEEP TREN...
- Publication number 20240038579
- Publication date Feb 1, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Asad Haider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCOS OR SIBLK TO PROTECT DEEP TRENCH POLYSILICON IN DEEP TRENCH AF...
- Publication number 20240038580
- Publication date Feb 1, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Hao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORRUGATED METAL OXIDE SEMICONDUCTOR TRANSISTOR
- Publication number 20230411452
- Publication date Dec 21, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sheldon Douglas Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND...
- Publication number 20230411501
- Publication date Dec 21, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE EPITAXY TO CREATE A DOUBLE-DIFFUSED CHANNEL OVER PLANAR O...
- Publication number 20230387260
- Publication date Nov 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sheldon Douglas Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR WITH DEEP WELL IMPLANT THROUGH GATE STRUCTURE
- Publication number 20230343828
- Publication date Oct 26, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES
- Publication number 20230317774
- Publication date Oct 5, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Alexei SADOVNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES
- Publication number 20230317775
- Publication date Oct 5, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Alexei SADOVNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUGGED LDMOS WITH FIELD PLATE
- Publication number 20230317846
- Publication date Oct 5, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Clint Alan Naquin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFUSED METAL-OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR WITH...
- Publication number 20230136827
- Publication date May 4, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Gang Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR
- Publication number 20230134131
- Publication date May 4, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DEEP TRENCH AND DEEP TRENCH ISLAND BASED DEEP N-TYPE WELL...
- Publication number 20230066563
- Publication date Mar 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DOPED REGION WITH BIASED ISOLATED MEMBERS
- Publication number 20220367388
- Publication date Nov 17, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON, NITROGEN AND/OR FLUORINE CO-IMPLANTS FOR LOW RESISTANCE TRA...
- Publication number 20220208973
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH CONSTRICTED COLLECTOR REGION HAVIN...
- Publication number 20220093737
- Publication date Mar 24, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BCD IC WITH GATE ETCH AND SELF-ALIGNED IMPLANT INTEGRATION
- Publication number 20220068649
- Publication date Mar 3, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS Transistor with Folded Channel and Folded Drift Region
- Publication number 20220037468
- Publication date Feb 3, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Sheldon Douglas Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND...
- Publication number 20210343860
- Publication date Nov 4, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS TRANSISTOR HAVING THICK GATE OXIDE AND STI AND METHOD OF FABRI...
- Publication number 20210280714
- Publication date Sep 9, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH CONSTRICTED COLLECTOR REGION HAVIN...
- Publication number 20210242308
- Publication date Aug 5, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS

Alexei Sadovnikov

Person

Patents Grantslast 30 patents

Laterally diffused metal-oxide semiconductor (LDMOS) transistor wit...

False collectors and guard rings for semiconductor devices

Semiconductor doped region with biased isolated members

Low cost, high performance analog metal oxide semiconductor transistor

DMOS transistor having thick gate oxide and STI and method of fabri...

False collectors and guard rings for semiconductor devices

Carbon, nitrogen and/or fluorine co-implants for low resistance tra...

Vertical deep trench and deep trench island based deep n-type well...

Semiconductor doped region with biased isolated members

Transistor having an emitter region with a silicide spaced apart fr...

Bipolar junction transistor with constricted collector region havin...

MOS transistor with folded channel and folded drift region

Bipolar junction transistor with biased structure between base and...

Bipolar junction transistor with constricted collector region havin...

Semiconductor device with deep trench isolation and trench capacitor

Drain extended transistor

Fabricating transistors with implanting dopants at first and second...

LDMOS with high-k drain STI dielectric

DMOS transistor having thick gate oxide and STI and method of fabri...

Integrated circuit with resurf region biasing under buried insulato...

MOS transistor with folded channel and folded drift region

Sinker to buried layer connection region for narrow deep trenches

Semiconductor device with deep trench isolation and trench capacitor

Integrated circuit with resurf region biasing under buried insulato...

LDMOS with high-k drain STI dielectric

Dual deep trenches for high voltage isolation

Integrated JFET structure with implanted backgate

Integrated circuit with resurf region biasing under buried insulato...

Method for creating the high voltage complementary BJT with lateral...

Method of improving lateral BJT characteristics in BCD technology

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT DEVICE WITH LATERALLY DIFFUSED METAL OXIDE SEMIC...

SEMICONDUCTOR DEVICE WITH A HIGH K FIELD RELIEF DIELECTRIC STRUCTURE

LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR

FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES

CARBON, NITROGEN AND/OR FLUORINE CO-IMPLANTS FOR LOW RESISTANCE TRA...

BREAKDOWN DIODES AND METHODS OF MAKING THE SAME

LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS

MERGED TRENCHES SURROUNDED BY WIDER TRENCH FOR ISOLATING SEMICONDUC...

VERTICAL DEEP TRENCH AND DEEP TRENCH ISLAND BASED DEEP N-TYPE WELL...

SEMICONDUCTOR DOPED REGION WITH BIASED ISOLATED MEMBERS

DIE SIZE REDUCTION AND DEEP TRENCH DENSITY INCREASE USING DEEP TREN...

LOCOS OR SIBLK TO PROTECT DEEP TRENCH POLYSILICON IN DEEP TRENCH AF...

CORRUGATED METAL OXIDE SEMICONDUCTOR TRANSISTOR

FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND...

SELECTIVE EPITAXY TO CREATE A DOUBLE-DIFFUSED CHANNEL OVER PLANAR O...

LDMOS TRANSISTOR WITH DEEP WELL IMPLANT THROUGH GATE STRUCTURE

FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES

FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES

RUGGED LDMOS WITH FIELD PLATE

LATERALLY DIFUSED METAL-OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR WITH...

LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR

VERTICAL DEEP TRENCH AND DEEP TRENCH ISLAND BASED DEEP N-TYPE WELL...

SEMICONDUCTOR DOPED REGION WITH BIASED ISOLATED MEMBERS

CARBON, NITROGEN AND/OR FLUORINE CO-IMPLANTS FOR LOW RESISTANCE TRA...

BIPOLAR JUNCTION TRANSISTOR WITH CONSTRICTED COLLECTOR REGION HAVIN...

BCD IC WITH GATE ETCH AND SELF-ALIGNED IMPLANT INTEGRATION

MOS Transistor with Folded Channel and Folded Drift Region

FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND...

DMOS TRANSISTOR HAVING THICK GATE OXIDE AND STI AND METHOD OF FABRI...

BIPOLAR JUNCTION TRANSISTOR WITH CONSTRICTED COLLECTOR REGION HAVIN...