Alper Genc

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Switch FET body current management devices and methods
- Patent number 12,176,888
- Issue date Dec 24, 2024
- pSemi Corporation
- Alper Genc
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gate resistive ladder bypass for RF FET switch stack
- Patent number 12,119,814
- Issue date Oct 15, 2024
- pSemi Corporation
- Ravindranath D. Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 12,074,217
- Issue date Aug 27, 2024
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inductive drain and/or body ladders in RF switch stacks
- Patent number 11,923,838
- Issue date Mar 5, 2024
- pSemi Corporation
- Alper Genc
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Switch FET body current management devices and methods
- Patent number 11,671,090
- Issue date Jun 6, 2023
- pSemi Corporation
- Alper Genc
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gate resistive ladder bypass for RF FET switch stack
- Patent number 11,632,107
- Issue date Apr 18, 2023
- pSemi Corporation
- Ravindranath D. Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices to generate gate induced drain leakage current...
- Patent number 11,463,087
- Issue date Oct 4, 2022
- pSemi Corporation
- Alper Genc
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gate resistor bypass for RF FET switch stack
- Patent number 11,405,035
- Issue date Aug 2, 2022
- pSemi Corporation
- Alper Genc
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 11,011,633
- Issue date May 18, 2021
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 10,797,172
- Issue date Oct 6, 2020
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 10,790,390
- Issue date Sep 29, 2020
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 10,629,733
- Issue date Apr 21, 2020
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 10,074,746
- Issue date Sep 11, 2018
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 9,786,781
- Issue date Oct 10, 2017
- Peregrine Semiconductor Corporation
- Christopher N. Brindle
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 9,653,601
- Issue date May 16, 2017
- Peregrine Semiconductor Corporation
- Christopher N. Brindle
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Reduced generation of second harmonics of FETs
- Patent number 9,461,037
- Issue date Oct 4, 2016
- Peregrine Semiconductor Corporation
- Alper Genc
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 9,087,899
- Issue date Jul 21, 2015
- Peregrine Semiconductor Corporation
- Christopher N. Brindle
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method and apparatus for use in improving linearity of MOSFETs usin...
- Patent number 8,742,502
- Issue date Jun 3, 2014
- Peregrine Semiconductor Corporation
- Christopher N. Brindle
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
GATE RESISTIVE LADDER BYPASS FOR RF FET SWITCH STACK
- Publication number 20240429918
- Publication date Dec 26, 2024
- pSemi Corporation
- Ravindranath D. SHRIVASTAVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...
- Publication number 20240421227
- Publication date Dec 19, 2024
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE RESISTOR BYPASS FOR RF FET SWITCH STACK
- Publication number 20240146301
- Publication date May 2, 2024
- pSemi Corporation
- Alper GENC
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
INDUCTIVE DRAIN AND/OR BODY LADDERS IN RF SWITCH STACKS
- Publication number 20230412171
- Publication date Dec 21, 2023
- pSemi Corporation
- Alper GENC
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SWITCH FET BODY CURRENT MANAGEMENT DEVICES AND METHODS
- Publication number 20230318596
- Publication date Oct 5, 2023
- pSemi Corporation
- Alper GENC
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
GATE RESISTIVE LADDER BYPASS FOR RF FET SWITCH STACK
- Publication number 20230283277
- Publication date Sep 7, 2023
- Ravindranath D. SHRIVASTAVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE RESISTIVE LADDER BYPASS FOR RF FET SWITCH STACK
- Publication number 20230107974
- Publication date Apr 6, 2023
- pSemi Corporation
- Ravindranath D. SHRIVASTAVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND DEVICES TO GENERATE GATE INDUCED DRAIN LEAKAGE CURRENT...
- Publication number 20220038099
- Publication date Feb 3, 2022
- pSemi Corporation
- Alper GENC
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SWITCH FET BODY CURRENT MANAGEMENT DEVICES AND METHODS
- Publication number 20220038092
- Publication date Feb 3, 2022
- pSemi Corporation
- Alper GENC
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SWITCH FET BODY CURRENT MANAGEMENT DEVICES AND METHODS
- Publication number 20220038097
- Publication date Feb 3, 2022
- pSemi Corporation
- Alper GENC
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...
- Publication number 20210320206
- Publication date Oct 14, 2021
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...
- Publication number 20200321467
- Publication date Oct 8, 2020
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus for use in Improving Linearity of MOSFETs usin...
- Publication number 20190237579
- Publication date Aug 1, 2019
- pSemi Corporation
- Christopher N. Brindle
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method and Apparatus for use in Improving Linearity of MOSFETs usin...
- Publication number 20190088781
- Publication date Mar 21, 2019
- pSemi Corporation
- Christopher N. Brindle
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method and Apparatus for use in Improving Linearity of MOSFETs usin...
- Publication number 20180061985
- Publication date Mar 1, 2018
- PEREGRINE SEMICONDUCTOR CORPORATION
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus for Use in Improving Linearity of MOSFETs Usin...
- Publication number 20170162692
- Publication date Jun 8, 2017
- PEREGRINE SEMICONDUCTOR CORPORATION
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus for use in Improving Linearity of MOSFETs Usin...
- Publication number 20160064561
- Publication date Mar 3, 2016
- PEREGRINE SEMICONDUCTOR CORPORATION
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Generation of Second Harmonics of FETs
- Publication number 20150222260
- Publication date Aug 6, 2015
- PEREGRINE SEMICONDUCTOR CORPORATION
- Alper Genc
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method and Apparatus for use in Improving Linearity of MOSFETs usin...
- Publication number 20140312422
- Publication date Oct 23, 2014
- PEREGRINE SEMICONDUCTOR CORPORATION
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus for use in Improving Linearity of MOSFETS usin...
- Publication number 20120267719
- Publication date Oct 25, 2012
- Christopher N. Brindle
- H03 - BASIC ELECTRONIC CIRCUITRY

Person

Patents Grantslast 30 patents

Switch FET body current management devices and methods

Gate resistive ladder bypass for RF FET switch stack

Method and apparatus for use in improving linearity of MOSFETs usin...

Inductive drain and/or body ladders in RF switch stacks

Switch FET body current management devices and methods

Gate resistive ladder bypass for RF FET switch stack

Methods and devices to generate gate induced drain leakage current...

Gate resistor bypass for RF FET switch stack

Method and apparatus for use in improving linearity of MOSFETs usin...

Method and apparatus for use in improving linearity of MOSFETs usin...

Method and apparatus for use in improving linearity of MOSFETs usin...

Method and apparatus for use in improving linearity of MOSFETs usin...

Method and apparatus for use in improving linearity of MOSFETs usin...

Method and apparatus for use in improving linearity of MOSFETs usin...

Method and apparatus for use in improving linearity of MOSFETs usin...

Reduced generation of second harmonics of FETs

Method and apparatus for use in improving linearity of MOSFETs usin...

Method and apparatus for use in improving linearity of MOSFETs usin...

Patents Applicationslast 30 patents

GATE RESISTIVE LADDER BYPASS FOR RF FET SWITCH STACK

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...

GATE RESISTOR BYPASS FOR RF FET SWITCH STACK

INDUCTIVE DRAIN AND/OR BODY LADDERS IN RF SWITCH STACKS

SWITCH FET BODY CURRENT MANAGEMENT DEVICES AND METHODS

GATE RESISTIVE LADDER BYPASS FOR RF FET SWITCH STACK

GATE RESISTIVE LADDER BYPASS FOR RF FET SWITCH STACK

METHODS AND DEVICES TO GENERATE GATE INDUCED DRAIN LEAKAGE CURRENT...

SWITCH FET BODY CURRENT MANAGEMENT DEVICES AND METHODS

SWITCH FET BODY CURRENT MANAGEMENT DEVICES AND METHODS

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...

Method and Apparatus for use in Improving Linearity of MOSFETs usin...

Method and Apparatus for use in Improving Linearity of MOSFETs usin...

Method and Apparatus for use in Improving Linearity of MOSFETs usin...

Method and Apparatus for Use in Improving Linearity of MOSFETs Usin...

Method and Apparatus for use in Improving Linearity of MOSFETs Usin...

Reduced Generation of Second Harmonics of FETs

Method and Apparatus for use in Improving Linearity of MOSFETs usin...

Method and Apparatus for use in Improving Linearity of MOSFETS usin...