Anant K. Agarwal

Person

Chapel Hill, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Power module for supporting high current densities
- Patent number 11,024,731
- Issue date Jun 1, 2021
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seminconductor device with spreading layer
- Patent number 10,950,719
- Issue date Mar 16, 2021
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power transistor device
- Patent number RE48380
- Issue date Jan 5, 2021
- Cree, Inc.
- Vipindas Pala
Information Patent Grant
Monolithically integrated vertical power transistor and bypass diode
- Patent number 10,868,169
- Issue date Dec 15, 2020
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with buried well protection regions
- Patent number 10,784,338
- Issue date Sep 22, 2020
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a carbon vacancy reduction material to increase average carri...
- Patent number 10,541,306
- Issue date Jan 21, 2020
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a carbon vacancy reduction material to increase average carri...
- Patent number 10,403,722
- Issue date Sep 3, 2019
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power module having a switch module for supporting high current den...
- Patent number 10,153,364
- Issue date Dec 11, 2018
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with buried well protection regions
- Patent number 10,134,834
- Issue date Nov 20, 2018
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming SiC MOSFETs with high channel mobility by treating the oxid...
- Patent number 9,984,894
- Issue date May 29, 2018
- Cree, Inc.
- Sarit Dhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode
- Patent number 9,865,750
- Issue date Jan 9, 2018
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor structure for reduced current crowding
- Patent number 9,755,018
- Issue date Sep 5, 2017
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power transistor device
- Patent number 9,741,842
- Issue date Aug 22, 2017
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power module for supporting high current densities
- Patent number 9,673,283
- Issue date Jun 6, 2017
- Cree, Inc.
- Jason Patrick Henning
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Double guard ring edge termination for silicon carbide devices
- Patent number 9,640,609
- Issue date May 2, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with improved avalanche capability
- Patent number 9,601,605
- Issue date Mar 21, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced gate dielectric for a field effect device with a trenched...
- Patent number 9,570,570
- Issue date Feb 14, 2017
- Cree, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with buried well protection regions
- Patent number 9,570,585
- Issue date Feb 14, 2017
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused junction termination structures for silicon carbide devices
- Patent number 9,570,560
- Issue date Feb 14, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power insulated gate bipolar transistors
- Patent number 9,548,374
- Issue date Jan 17, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination structures for silicon carbide devices
- Patent number 9,515,135
- Issue date Dec 6, 2016
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-gain wide bandgap darlington transistors and related methods o...
- Patent number 9,478,537
- Issue date Oct 25, 2016
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high performance channel
- Patent number 9,478,616
- Issue date Oct 25, 2016
- Cree, Inc.
- Sarit Dhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination technique for high voltage power devices having a...
- Patent number 9,425,265
- Issue date Aug 23, 2016
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet chemistry processes for fabricating a semiconductor device with...
- Patent number 9,396,946
- Issue date Jul 19, 2016
- Cree, Inc.
- Sarit Dhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with high blocking voltage terminated by a negative bevel
- Patent number 9,349,797
- Issue date May 24, 2016
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of processing semiconductor wafers having silicon carbide p...
- Patent number 9,349,596
- Issue date May 24, 2016
- Cree, Inc.
- Anant Agarwal
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
SiC devices with high blocking voltage terminated by a negative bevel
- Patent number 9,337,268
- Issue date May 10, 2016
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power transistor device
- Patent number 9,331,197
- Issue date May 3, 2016
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with semiconductor interconnection layers and semicondu...
- Patent number 9,312,343
- Issue date Apr 12, 2016
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER MODULE FOR SUPPORTING HIGH CURRENT DENSITIES
- Publication number 20190067468
- Publication date Feb 28, 2019
- Cree, Inc.
- Jason Patrick Henning
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICES WITH BURIED WELL PROTECTION REGIONS
- Publication number 20190067414
- Publication date Feb 28, 2019
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MODULE FOR SUPPORTING HIGH CURRENT DENSITIES
- Publication number 20170263713
- Publication date Sep 14, 2017
- Cree, Inc.
- Jason Patrick Henning
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Field Effect Transistor Devices with Buried Well Protection Regions
- Publication number 20170092715
- Publication date Mar 30, 2017
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER TRANSISTOR DEVICE
- Publication number 20160211360
- Publication date Jul 21, 2016
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Buried Well Protection Regions
- Publication number 20160005837
- Publication date Jan 7, 2016
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE
- Publication number 20150333191
- Publication date Nov 19, 2015
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Power Insulated Gate Bipolar Transistors
- Publication number 20150287805
- Publication date Oct 8, 2015
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SU...
- Publication number 20150111347
- Publication date Apr 23, 2015
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES IN SIC USING VIAS THROUGH N-TYPE SUBSTRATE FO...
- Publication number 20150102361
- Publication date Apr 16, 2015
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT DEVICE WITH ENHANCED GATE DIELECTRIC STRUCTURE
- Publication number 20150097226
- Publication date Apr 9, 2015
- Cree, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED VERTICAL POWER TRANSISTOR AND BYPASS DIODE
- Publication number 20150084062
- Publication date Mar 26, 2015
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED VERTICAL POWER TRANSISTOR AND BYPASS DIODE
- Publication number 20150084125
- Publication date Mar 26, 2015
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION TECHNIQUE FOR HIGH VOLTAGE POWER DEVICES
- Publication number 20150048489
- Publication date Feb 19, 2015
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER TRANSISTOR DEVICE
- Publication number 20150041886
- Publication date Feb 12, 2015
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED GATE DIELECTRIC FOR A FIELD EFFECT DEVICE WITH A TRENCHED...
- Publication number 20150021623
- Publication date Jan 22, 2015
- Cree, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Junction Termination Extension Edge Terminations...
- Publication number 20150021742
- Publication date Jan 22, 2015
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Buried Well Protection Regions
- Publication number 20140264564
- Publication date Sep 18, 2014
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Buried Well Regions and Epitax...
- Publication number 20140264579
- Publication date Sep 18, 2014
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Protective Regions
- Publication number 20140264563
- Publication date Sep 18, 2014
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Regrown P-Layers
- Publication number 20140264562
- Publication date Sep 18, 2014
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE
- Publication number 20140145213
- Publication date May 29, 2014
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffused Junction Termination Structures for Silicon Carbide Devices
- Publication number 20140097450
- Publication date Apr 10, 2014
- The University of South Carolina
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING A CARBON VACANCY REDUCTION MATERIAL TO INCREASE AVERAGE CARRI...
- Publication number 20140070230
- Publication date Mar 13, 2014
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH IMPROVED AVALANCHE CAPABILITY
- Publication number 20130264581
- Publication date Oct 10, 2013
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CURRENT DENSITY POWER MODULE
- Publication number 20130207123
- Publication date Aug 15, 2013
- Cree, Inc.
- Jason Patrick Henning
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR STRUCTURE FOR REDUCED CURRENT CROWDING
- Publication number 20130146894
- Publication date Jun 13, 2013
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION STRUCTURE EMPLOYING RECESSES FOR EDGE TERMINATION...
- Publication number 20130062619
- Publication date Mar 14, 2013
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE EMPLOYING RECESSES FOR ELEMENTS OF JUNCTION BARRIER...
- Publication number 20130062620
- Publication date Mar 14, 2013
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE
- Publication number 20130062723
- Publication date Mar 14, 2013
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS

Anant K. Agarwal

Person

Patents Grantslast 30 patents

Power module for supporting high current densities

Seminconductor device with spreading layer

Vertical power transistor device

Monolithically integrated vertical power transistor and bypass diode

Field effect transistor devices with buried well protection regions

Using a carbon vacancy reduction material to increase average carri...

Using a carbon vacancy reduction material to increase average carri...

Power module having a switch module for supporting high current den...

Field effect transistor devices with buried well protection regions

Forming SiC MOSFETs with high channel mobility by treating the oxid...

Schottky diode

Bipolar junction transistor structure for reduced current crowding

Vertical power transistor device

Power module for supporting high current densities

Double guard ring edge termination for silicon carbide devices

Bipolar junction transistor with improved avalanche capability

Enhanced gate dielectric for a field effect device with a trenched...

Field effect transistor devices with buried well protection regions

Diffused junction termination structures for silicon carbide devices

High power insulated gate bipolar transistors

Edge termination structures for silicon carbide devices

High-gain wide bandgap darlington transistors and related methods o...

Semiconductor device having high performance channel

Edge termination technique for high voltage power devices having a...

Wet chemistry processes for fabricating a semiconductor device with...

SiC devices with high blocking voltage terminated by a negative bevel

Methods of processing semiconductor wafers having silicon carbide p...

SiC devices with high blocking voltage terminated by a negative bevel

Vertical power transistor device

Transistors with semiconductor interconnection layers and semicondu...

Patents Applicationslast 30 patents

POWER MODULE FOR SUPPORTING HIGH CURRENT DENSITIES

FIELD EFFECT TRANSISTOR DEVICES WITH BURIED WELL PROTECTION REGIONS

POWER MODULE FOR SUPPORTING HIGH CURRENT DENSITIES

Field Effect Transistor Devices with Buried Well Protection Regions

VERTICAL POWER TRANSISTOR DEVICE

Field Effect Transistor Devices with Buried Well Protection Regions

SCHOTTKY DIODE

High Power Insulated Gate Bipolar Transistors

ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SU...

SEMICONDUCTOR DEVICES IN SIC USING VIAS THROUGH N-TYPE SUBSTRATE FO...

FIELD EFFECT DEVICE WITH ENHANCED GATE DIELECTRIC STRUCTURE

MONOLITHICALLY INTEGRATED VERTICAL POWER TRANSISTOR AND BYPASS DIODE

MONOLITHICALLY INTEGRATED VERTICAL POWER TRANSISTOR AND BYPASS DIODE

EDGE TERMINATION TECHNIQUE FOR HIGH VOLTAGE POWER DEVICES

VERTICAL POWER TRANSISTOR DEVICE

ENHANCED GATE DIELECTRIC FOR A FIELD EFFECT DEVICE WITH A TRENCHED...

Methods of Forming Junction Termination Extension Edge Terminations...

Field Effect Transistor Devices with Buried Well Protection Regions

Field Effect Transistor Devices with Buried Well Regions and Epitax...

Field Effect Transistor Devices with Protective Regions

Field Effect Transistor Devices with Regrown P-Layers

SCHOTTKY DIODE

Diffused Junction Termination Structures for Silicon Carbide Devices

USING A CARBON VACANCY REDUCTION MATERIAL TO INCREASE AVERAGE CARRI...

BIPOLAR JUNCTION TRANSISTOR WITH IMPROVED AVALANCHE CAPABILITY

HIGH CURRENT DENSITY POWER MODULE

BIPOLAR JUNCTION TRANSISTOR STRUCTURE FOR REDUCED CURRENT CROWDING

EDGE TERMINATION STRUCTURE EMPLOYING RECESSES FOR EDGE TERMINATION...

SCHOTTKY DIODE EMPLOYING RECESSES FOR ELEMENTS OF JUNCTION BARRIER...

SCHOTTKY DIODE