Andreas Hilliger

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned V0-contact for cell size reduction
- Patent number 7,378,700
- Issue date May 27, 2008
- Infineon Technologies AG
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a contact in a device, and the device including the co...
- Patent number 7,101,785
- Issue date Sep 5, 2006
- Infineon Technologies AG
- Andreas Hilliger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for inhibiting hydrogen damage in ferroelectric capacitor de...
- Patent number 7,071,506
- Issue date Jul 4, 2006
- Infineon Technologies AG
- Bum-Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned V0-contact for cell size reduction
- Patent number 7,061,035
- Issue date Jun 13, 2006
- Infineon Technologies AG
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall structure and method of fabrication for reducing oxygen di...
- Patent number 7,042,705
- Issue date May 9, 2006
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier stack with improved barrier properties
- Patent number 7,009,230
- Issue date Mar 7, 2006
- Infineon Technologies Aktiengesellschaft
- Bum Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor devices and FeRAM devices
- Patent number 7,002,196
- Issue date Feb 21, 2006
- Infineon Technologies AG
- Andreas Hilliger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Side-wall barrier structure and method of fabrication
- Patent number 6,946,735
- Issue date Sep 20, 2005
- Infineon AG
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory integrated circuit with improved reliability
- Patent number 6,858,442
- Issue date Feb 22, 2005
- Infineon Technologies Aktiengesellschaft
- Andreas Hilliger
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having ferroelectric film and manufacturing me...
- Patent number 6,855,565
- Issue date Feb 15, 2005
- Kabushiki Kaisha Toshiba
- Hiroyuki Kanaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer barrier allowing recovery anneal for ferroelectric capa...
- Patent number 6,839,220
- Issue date Jan 4, 2005
- Infineon Technologies AG
- Andreas Hilliger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing stress in integrated circuits
- Patent number 6,815,234
- Issue date Nov 9, 2004
- Infineon Technologies Aktiengesellschaft
- Uwe Wellhausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory architecture with series grouped by cells
- Patent number 6,800,890
- Issue date Oct 5, 2004
- Infineon Technologies Aktiengesellschaft
- Joerg Wohlfahrt
- G11 - INFORMATION STORAGE
Information Patent Grant
Barrier stack with improved barrier properties
- Patent number 6,787,831
- Issue date Sep 7, 2004
- Infineon Technologies Aktiengesellschaft
- Bum Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory architecture with memory cell groups
- Patent number 6,724,026
- Issue date Apr 20, 2004
- Infineon Technologies Aktiengesellschaft
- Michael Jacob
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having ferroelectric film and manufacturing me...
- Patent number 6,677,630
- Issue date Jan 13, 2004
- Kabushiki Kaisha Toshiba
- HIroyuki Kanaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with improved reliability
- Patent number 6,621,683
- Issue date Sep 16, 2003
- Infineon Technologies Aktiengesellschaft
- Bum-ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor over plug structure
- Patent number 6,614,642
- Issue date Sep 2, 2003
- Infineon Technologies Aktiengesellschaft
- Bum-ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact for memory cells
- Patent number 6,611,449
- Issue date Aug 26, 2003
- Infineon Technologies Aktiengesellschaft
- Andreas Hilliger
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Self-aligned V0-contact for cell size reduction
- Publication number 20060151819
- Publication date Jul 13, 2006
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device and method for forming ferroelectric capacitor devices and F...
- Publication number 20050106759
- Publication date May 19, 2005
- Andreas Hilliger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned Vo-contact for cell size reduction
- Publication number 20050082583
- Publication date Apr 21, 2005
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device and method for inhibiting hydrogen damage in ferroelectric c...
- Publication number 20050051819
- Publication date Mar 10, 2005
- Bum-Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of a contact in a device, and the device including the co...
- Publication number 20050020054
- Publication date Jan 27, 2005
- Andreas Hilliger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER BARRIER ALLOWING RECOVERY ANNEAL FOR FERROELECTRIC CAPA...
- Publication number 20050013091
- Publication date Jan 20, 2005
- Andreas Hilliger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARCHITECTURE WITH SERIES GROUPED BY CELLS
- Publication number 20040232457
- Publication date Nov 25, 2004
- Joerg Wohlfahrt
- G11 - INFORMATION STORAGE
Information Patent Application
Process for fabrication of ferroelectric devices with reduced hydro...
- Publication number 20040206993
- Publication date Oct 21, 2004
- Infineon Technologies AG
- Karl Hornik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Suppression of electrode re-crystallisation in a ferrocapacitor
- Publication number 20040201049
- Publication date Oct 14, 2004
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier Stack with Improved Barrier Properties
- Publication number 20040178431
- Publication date Sep 16, 2004
- Bum Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming electrical connections within ferroelectric devices
- Publication number 20040163233
- Publication date Aug 26, 2004
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY INTEGRATED CIRCUIT WITH IMPROVED RELIABILITY
- Publication number 20040166629
- Publication date Aug 26, 2004
- Andreas Hilliger
- G11 - INFORMATION STORAGE
Information Patent Application
Sidewall structure and method of fabrication for reducing oxygen di...
- Publication number 20040149477
- Publication date Aug 5, 2004
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING STRESS IN INTEGRATED CIRCUITS
- Publication number 20040124452
- Publication date Jul 1, 2004
- Uwe Wellhausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Side-wall barrier structure and method of fabrication
- Publication number 20040104471
- Publication date Jun 3, 2004
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having ferroelectric film and manufacturing me...
- Publication number 20040099894
- Publication date May 27, 2004
- Hiroyuki Kanaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARCHITECTURE WITH MEMORY CELL GROUPS
- Publication number 20040056286
- Publication date Mar 25, 2004
- Michael Jacob
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FERROELECTRIC FILM AND MANUFACTURING ME...
- Publication number 20030234411
- Publication date Dec 25, 2003
- Hiroyuki Kanaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact formation
- Publication number 20030224536
- Publication date Dec 4, 2003
- Andreas Hilliger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier stack with improved barrier properties
- Publication number 20030132469
- Publication date Jul 17, 2003
- Bum Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS

Andreas Hilliger

Person

Patents Grantslast 30 patents

Self-aligned V0-contact for cell size reduction

Formation of a contact in a device, and the device including the co...

Device for inhibiting hydrogen damage in ferroelectric capacitor de...

Self-aligned V0-contact for cell size reduction

Sidewall structure and method of fabrication for reducing oxygen di...

Barrier stack with improved barrier properties

Ferroelectric capacitor devices and FeRAM devices

Side-wall barrier structure and method of fabrication

Ferroelectric memory integrated circuit with improved reliability

Semiconductor device having ferroelectric film and manufacturing me...

Multi-layer barrier allowing recovery anneal for ferroelectric capa...

Reducing stress in integrated circuits

Memory architecture with series grouped by cells

Barrier stack with improved barrier properties

Memory architecture with memory cell groups

Semiconductor device having ferroelectric film and manufacturing me...

Memory cells with improved reliability

Capacitor over plug structure

Contact for memory cells

Patents Applicationslast 30 patents

Self-aligned V0-contact for cell size reduction

Device and method for forming ferroelectric capacitor devices and F...

Self-aligned Vo-contact for cell size reduction

Device and method for inhibiting hydrogen damage in ferroelectric c...

Formation of a contact in a device, and the device including the co...

MULTI-LAYER BARRIER ALLOWING RECOVERY ANNEAL FOR FERROELECTRIC CAPA...

MEMORY ARCHITECTURE WITH SERIES GROUPED BY CELLS

Process for fabrication of ferroelectric devices with reduced hydro...

Suppression of electrode re-crystallisation in a ferrocapacitor

Barrier Stack with Improved Barrier Properties

Methods of forming electrical connections within ferroelectric devices

FERROELECTRIC MEMORY INTEGRATED CIRCUIT WITH IMPROVED RELIABILITY

Sidewall structure and method of fabrication for reducing oxygen di...

REDUCING STRESS IN INTEGRATED CIRCUITS

Side-wall barrier structure and method of fabrication

Semiconductor device having ferroelectric film and manufacturing me...

MEMORY ARCHITECTURE WITH MEMORY CELL GROUPS

SEMICONDUCTOR DEVICE HAVING FERROELECTRIC FILM AND MANUFACTURING ME...

Contact formation

Barrier stack with improved barrier properties