Andrew J. Purdes

Person

Garland, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming lateral resonant tunneling devices
- Patent number 6,139,483
- Issue date Oct 31, 2000
- Texas Instruments Incorporated
- Alan C. Seabaugh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Forming a piezoelectric layer with improved texture
- Patent number 5,952,059
- Issue date Sep 14, 1999
- Texas Instruments Incorporated
- Edward A. Beam
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming a piezoelectric layer with improved texture
- Patent number 5,935,641
- Issue date Aug 10, 1999
- Texas Instruments Incorporated
- Edward A. Beam
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth method by repeatedly measuring flux in MBE chamber
- Patent number 5,556,462
- Issue date Sep 17, 1996
- Texas Instruments Incorporated
- Francis G. Celii
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of semiconductor layer growth by MBE
- Patent number 5,399,521
- Issue date Mar 21, 1995
- Texas Instruments Incorporated
- Francis G. Celii
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for depositing a thin film
- Patent number 5,175,019
- Issue date Dec 29, 1992
- Texas Instruments Incorporated
- Andrew J. Purdes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Stress free chip mount and method of manufacture
- Patent number 5,170,329
- Issue date Dec 8, 1992
- Texas Instruments Incorporated
- Andrew J. Purdes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond growth method
- Patent number 5,114,696
- Issue date May 19, 1992
- Texas Instruments Incorporated
- Andrew J. Purdes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming patterned diamond thin films
- Patent number 5,082,522
- Issue date Jan 21, 1992
- Texas Instruments Incorporated
- Andrew J. Purdes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diamond growth method
- Patent number 5,006,203
- Issue date Apr 9, 1991
- Texas Instruments Incorporated
- Andrew J. Purdes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Chemical beam epitaxy system
- Patent number 4,878,989
- Issue date Nov 7, 1989
- Texas Instruments Incorporated
- Andrew J. Purdes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heteroepitaxial growth using tensioning layer on rear su...
- Patent number 4,830,984
- Issue date May 16, 1989
- Texas Instruments Incorporated
- Andrew J. Purdes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical beam epitaxy system
- Patent number 4,699,085
- Issue date Oct 13, 1987
- Texas Instruments Incorporated
- Andrew J. Purdes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Planarized dielectric deposited using plasma enhanced chemical vapo...
- Patent number 4,681,653
- Issue date Jul 21, 1987
- Texas Instruments Incorporated
- Andrew J. Purdes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma etch chemistry for anisotropic etching of silicon
- Patent number 4,521,275
- Issue date Jun 4, 1985
- Texas Instruments Incorporated
- Andrew J. Purdes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor with reduced chamber wall deposition
- Patent number 4,513,021
- Issue date Apr 23, 1985
- Texas Instruments Incorporated
- Andrew J. Purdes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor sidewall shield
- Patent number 4,512,283
- Issue date Apr 23, 1985
- Texas Instruments Incorporated
- Thomas D. Bonifield
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma etch chemistry for anisotropic etching of silicon
- Patent number 4,450,042
- Issue date May 22, 1984
- Texas Instruments Incorporated
- Andrew J. Purdes
- H01 - BASIC ELECTRIC ELEMENTS

Andrew J. Purdes

Person

Patents Grantslast 30 patents

Method of forming lateral resonant tunneling devices

Forming a piezoelectric layer with improved texture

Method of forming a piezoelectric layer with improved texture

Growth method by repeatedly measuring flux in MBE chamber

Method of semiconductor layer growth by MBE

Method for depositing a thin film

Stress free chip mount and method of manufacture

Diamond growth method

Method for forming patterned diamond thin films

Diamond growth method

Chemical beam epitaxy system

Method for heteroepitaxial growth using tensioning layer on rear su...

Chemical beam epitaxy system

Planarized dielectric deposited using plasma enhanced chemical vapo...

Plasma etch chemistry for anisotropic etching of silicon

Plasma reactor with reduced chamber wall deposition

Plasma reactor sidewall shield

Plasma etch chemistry for anisotropic etching of silicon