Claims
- 1. A method of forming a piezoelectric layer with improved texture, comprising the steps of:
- depositing seed material on a substrate at a first deposition rate to form a seed layer; and
- depositing piezoelectric material on the seed layer at a second deposition rate to form a bulk piezoelectric layer, said piezoelectric material is comprised of aluminum nitride or zinc oxide.
- 2. The method of claim 1, wherein the steps of depositing seed material and depositing piezoelectric material each comprise the step of depositing using a technique selected from the group consisting of a sputter deposition technique, a chemical vapor deposition technique, and a plasma enhanced chemical vapor deposition technique.
- 3. The method of claim 1, wherein the seed material comprises a piezoelectric material.
- 4. The method of claim 1, wherein the seed material comprises a metal or metallic compound.
- 5. The method of claim 1, wherein the step of depositing seed material comprises the step of depositing at a temperature in the range of 25-300.degree. C.
- 6. The method of claim 1, whereinthe step of depositing piezoelectric material comprises the step of depositing at a temperature in the range of 25-300.degree. C.
- 7. The method of claim 1, wherein the first deposition rate is a rate in the range of 10.0-150 nanometers per hour.
- 8. The method of claim 1, wherein the second deposition rate is a rate in the range of 500-5000 nanometers per hour.
- 9. The method of claim 1, further comprising the step of depositing a layer of insulating material on the substrate prior to the step of depositing seed material.
- 10. The method of claim 1, further comprising the step of depositing a layer of conducting material on the substrate prior to the step of depositing seed material.
- 11. A method of forming a piezoelectric layer with improved texture, comprising the steps of:
- depositing seed material on a substrate at a deposition rate in the range of 10.0-150 nanometers per hour to form a seed layer; and
- depositing a piezoelectric material on the seed layer at a deposition rate in the range of 500-5000 nanometers per hour to form a bulk piezoelectric layer, said piezoelectric material is comprised of aluminum nitride or zinc oxide.
- 12. The method of claim 11, wherein the steps of depositing seed material and depositing a piezoelectric material each comprise the step of depositing using a technique selected from the group comprising a sputter deposition technique, a conventional chemical vapor deposition technique, and a plasma enhanced ultra high vacuum chemical vapor deposition technique.
- 13. The method of claim 11, wherein the seed material comprises a piezoelectric material.
- 14. The method of claim 11, wherein the seed material comprises a metal or metallic compound.
- 15. The method of claim 11, wherein the step of depositing seed material comprises the step of depositing at a temperature in the range of 25-300.degree. C.
- 16. The method of claim 11, wherein the step of depositing piezoelectric material comprises the step of depositing at a temperature in the range of 25-300.degree. C.
- 17. A method of forming a piezoelectric layer with improved texture, comprising the steps of:
- depositing an insulating material, a conducting material, or a combination thereof, on a substrate to form at least one intermediate layer;
- depositing seed material on the intermediate layer at a low deposition rate to form a seed layer; and
- depositing piezoelectric material on the seed layer at a high deposition rate to form a bulk piezoelectric layer, said piezoelectric material is comprised of aluminium nitride or zinc oxide.
- 18. The method of claim 17, wherein the first deposition rate comprises a rate in the range of 10.0-150 nanometers per hour.
- 19. The method of claim 17, wherein the second deposition rate comprises a rate in the range of 500-5000 nanometers per hour.
Parent Case Info
This application claims priority under 35 USC .sctn. 119(e)(1) of provisional application Ser. No. 60/028,989, filed Oct. 23, 1996.
US Referenced Citations (8)
Non-Patent Literature Citations (1)
Entry |
Buchanon, Relva C., "Ceramic Materials for Electronics"; Marcel Dekker, Inc, New York, 1986, p. 141. |