Claims
- 1. A method of molecular beam epitaxy layer growth, comprising the steps of:
- directing a first beam of first growth species at a wafer in a growth chamber;
- repeatedly measuring first flux of reflection of said first beam from said wafer to obtain first flux measurement signals;
- directing a second beam of second growth species at said wafer in said growth chamber;
- repeatedly measuring second flux of reflection of said second beam from said wafer to obtain second flux measurement signals;
- integrating said first flux measurement signals and said second flux measurement signals over time; and
- controlling the growth of said first growth species and said second growth species based on said integration of said first flux measurement signals and said second flux measurement signals.
- 2. The method of claim 1, wherein:
- (a) said measuring the flux is by a mass spectrometer.
- 3. The method of claim 1, wherein:
- (a) said wafer has a nonplanar surface.
- 4. A method of molecular beam epitaxy layer growth, comprising the steps of:
- directing a first beam of first growth species at a wafer in a growth chamber;
- repeatedly measuring the flux of the reflection of said first beam from said wafer to obtain first flux measurements;
- integrating the first flux measurements over time; and
- directing a second beam of second growth species at said wafer in said growth wafer repeatedly measuring the flux of the reflection of said first beam from said wafer to obtain second flux measurements;
- integrating the second flux measurements over time;
- controlling the growth of first growth species and said second growth species based on said integrated first and second flux measurements.
- 5. The method of claim 1, wherein:
- integrating the second flux measurements over time.
- 6. The method of claim 4, wherein:
- (a) said wafer has a nonplanar surface.
Parent Case Info
This is a continuation of application Ser. No. 08/133,699, filed Oct. 8, 1993 now U.S. Pat. No. 5,399,521.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5092320 |
Aspenes et al. |
Feb 1992 |
|
5179399 |
Brennau et al. |
Dec 1992 |
|
Non-Patent Literature Citations (1)
Entry |
Brennan et al. "Application of Refection Mass Spectrometry to MBE growth of InAlAs and InGaAs" Jr. Vac. Sci. & Tech. B 7 &(2), Mar./Apr. 1987, pp. 277-82. |
Continuations (1)
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Number |
Date |
Country |
Parent |
133699 |
Oct 1993 |
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