Andrew Metz

Person

Watervliet, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Contact openings in semiconductor devices
- Patent number 12,191,202
- Issue date Jan 7, 2025
- Tokyo Electron Limited
- Blaze Messer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming self-aligned contacts using spin-on silicon car...
- Patent number 12,080,599
- Issue date Sep 3, 2024
- Tokyo Electron Limited
- Junling Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technologies for high aspect ratio carbon etching with inserted cha...
- Patent number 12,040,176
- Issue date Jul 16, 2024
- Tokyo Electron Limited
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming contact holes with controlled local critical dimension unif...
- Patent number 11,978,631
- Issue date May 7, 2024
- Tokyo Electron Limited
- Junling Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cyclic plasma processing
- Patent number 11,961,735
- Issue date Apr 16, 2024
- Tokyo Electron Limited
- Yun Han
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Non-atomic layer deposition (ALD) method of forming sidewall passiv...
- Patent number 11,651,967
- Issue date May 16, 2023
- Tokyo Electron Limited
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cyclic plasma etching of carbon-containing materials
- Patent number 11,538,692
- Issue date Dec 27, 2022
- Tokyo Electron Limited
- Yunho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized etch stop layer
- Patent number 11,532,517
- Issue date Dec 20, 2022
- Tokyo Electron Limited
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods to control critical dimension (CD) shrink ratio...
- Patent number 11,495,436
- Issue date Nov 8, 2022
- Tokyo Electron Limited
- Junling Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming self-aligned contacts using spin-on silicon car...
- Patent number 11,482,454
- Issue date Oct 25, 2022
- Tokyo Electron Limited
- Junling Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for etching silicon cyanide (SiCN) with multi-c...
- Patent number 11,227,774
- Issue date Jan 18, 2022
- Tokyo Electron Limited
- Shihsheng Chang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Non-atomic layer deposition (ALD) method of forming sidewall passiv...
- Patent number 11,195,723
- Issue date Dec 7, 2021
- Tokyo Electron Limited
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing methods for mandrel pull from spacers for multi-color...
- Patent number 11,127,594
- Issue date Sep 21, 2021
- Tokyo Electron Limited
- Xinghua Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio via etch using atomic layer deposition protection...
- Patent number 11,121,027
- Issue date Sep 14, 2021
- Tokyo Electron Limited
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal hard mask layers for processing of microelectronic workpieces
- Patent number 10,950,444
- Issue date Mar 16, 2021
- Tokyo Electron Limited
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method utilizing using post etch pattern encapsulation
- Patent number 10,950,460
- Issue date Mar 16, 2021
- Tokyo Electron Limited
- Angelique Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of anisotropically etching adjacent lines with multi-color s...
- Patent number 10,937,659
- Issue date Mar 2, 2021
- Tokyo Electron Limited
- Shihsheng Chang
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method for reducing reactive ion etch lag in low K dielectric etching
- Patent number 10,854,453
- Issue date Dec 1, 2020
- Tokyo Electron Limited
- Angelique D. Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of quasi atomic layer etching
- Patent number 10,438,797
- Issue date Oct 8, 2019
- Tokyo Electron Limited
- Hongyun Cottle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning a substrate using a layer with multiple mater...
- Patent number 10,332,744
- Issue date Jun 25, 2019
- Tokyo Electron Limited
- Anton J. deVilliers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench and hole patterning with EUV resists using dual frequency ca...
- Patent number 9,818,610
- Issue date Nov 14, 2017
- Tokyo Electron Limited
- Hiroie Matsumoto
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Trench and hole patterning with EUV resists using dual frequency ca...
- Patent number 9,607,834
- Issue date Mar 28, 2017
- Tokyo Electron Limited
- Hiroie Matsumoto
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Self-aligned patterning using directed self-assembly of block copol...
- Patent number 9,396,958
- Issue date Jul 19, 2016
- Tokyo Electron Limited
- Andrew W. Metz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing oxide etch selectivity
- Patent number 9,368,368
- Issue date Jun 14, 2016
- Tokyo Electron Limited
- Andrew Metz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self-aligned contacts using a replacement metal g...
- Patent number 9,257,529
- Issue date Feb 9, 2016
- Tokyo Electron Limited
- Andrew Metz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry metal etching method
- Patent number 8,808,562
- Issue date Aug 19, 2014
- Tokyo Electron Limited
- Yusuke Ohsawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etch process for silicon nitride
- Patent number 8,501,630
- Issue date Aug 6, 2013
- Tokyo Electron Limited
- Andrew W. Metz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for high aspect ratio patterning in a spin-on layer
- Patent number 8,382,997
- Issue date Feb 26, 2013
- Tokyo Electron Limited
- Andrew W. Metz
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
Apparatus and Methods for Plasma Processing
- Publication number 20240331979
- Publication date Oct 3, 2024
- TOKYO ELECTRON LIMITED
- Sergey Voronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU FOCUS RING COATING
- Publication number 20240249921
- Publication date Jul 25, 2024
- TOKYO ELECTRON LIMITED
- Minjoon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Etching with Metal Sputtering
- Publication number 20240249927
- Publication date Jul 25, 2024
- TOKYO ELECTRON LIMITED
- Minjoon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Aspect Ratio Contact (HARC) Etch
- Publication number 20240096640
- Publication date Mar 21, 2024
- TOKYO ELECTRON LIMITED
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING TOOLS AND SYSTEMS
- Publication number 20230395385
- Publication date Dec 7, 2023
- TOKYO ELECTRON LIMITED
- Minjoon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Variable Hardness Amorphous Carbon Mask
- Publication number 20230343592
- Publication date Oct 26, 2023
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Improving Etch Rate And Critical Dimension Uniformity Wh...
- Publication number 20230343598
- Publication date Oct 26, 2023
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR HIGH ASPECT RATIO CARBON ETCHING WITH INSERTED CHA...
- Publication number 20230326737
- Publication date Oct 12, 2023
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCH PROCESS FOR FABRICATING HIGH ASPECT RATIO (HAR) FEATURES
- Publication number 20230094212
- Publication date Mar 30, 2023
- TOKYO ELECTRON LIMITED
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Self-Aligned Contacts Using Spin-on Silicon Car...
- Publication number 20230044047
- Publication date Feb 9, 2023
- TOKYO ELECTRON LIMITED
- Junling Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CYCLIC PLASMA PROCESSING
- Publication number 20220392765
- Publication date Dec 8, 2022
- TOKYO ELECTRON LIMITED
- Yun Han
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SACRIFICIAL CAPPING LAYER FOR CONTACT ETCH
- Publication number 20220384199
- Publication date Dec 1, 2022
- TOKYO ELECTRON LIMITED
- Yun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cyclic Plasma Etching Of Carbon-Containing Materials
- Publication number 20220375759
- Publication date Nov 24, 2022
- TOKYO ELECTRON LIMITED
- Yunho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A FINFET STRUCTURE
- Publication number 20220344162
- Publication date Oct 27, 2022
- TOKYO ELECTRON LIMITED
- Yun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL CAPPING LAYER FOR GATE PROTECTION
- Publication number 20220344169
- Publication date Oct 27, 2022
- TOKYO ELECTRON LIMITED
- Yun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Self-Aligned Contacts Using Spin-on Silicon Car...
- Publication number 20220262679
- Publication date Aug 18, 2022
- TOKYO ELECTRON LIMITED
- Junling Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Etch Stop Layer with Improved Etch Stop Capability
- Publication number 20220246747
- Publication date Aug 4, 2022
- TOKYO ELECTRON LIMITED
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recessed Contact Structures and Methods
- Publication number 20220231138
- Publication date Jul 21, 2022
- TOKYO ELECTRON LIMITED
- Andrew Metz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL AMORPHOUS CARBON LAYER ETCH WITH SIDE-WALL PASSIVATION
- Publication number 20220199410
- Publication date Jun 23, 2022
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Atomic Layer Deposition (ALD) Method of Forming Sidewall Passiv...
- Publication number 20220189781
- Publication date Jun 16, 2022
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CONTACT HOLES WITH CONTROLLED LOCAL CRITICAL DIMENSION UNIF...
- Publication number 20220181152
- Publication date Jun 9, 2022
- TOKYO ELECTRON LIMITED
- Junling Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SEMICONDUCTOR DEVICE USING A PROTECTIVE LAYER
- Publication number 20210391181
- Publication date Dec 16, 2021
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Openings in Semiconductor Devices
- Publication number 20210358807
- Publication date Nov 18, 2021
- TOKYO ELECTRON LIMITED
- Blaze Messer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Systems and Methods to Control Critical Dimension (CD) Shrink Ratio...
- Publication number 20210343502
- Publication date Nov 4, 2021
- TOKYO ELECTRON LIMITED
- Junling Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED ETCH STOP LAYER
- Publication number 20210242089
- Publication date Aug 5, 2021
- TOKYO ELECTRON LIMITED
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEMS FOR ETCHING SILICON CYANIDE (SICN) WITH MULTI-C...
- Publication number 20210172062
- Publication date Jun 10, 2021
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF ANISOTROPICALLY ETCHING ADJACENT LINES WITH MULTI-COLOR S...
- Publication number 20200328086
- Publication date Oct 15, 2020
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Utilizing Using Post Etch Pattern Encapsulation
- Publication number 20200051832
- Publication date Feb 13, 2020
- TOKYO ELECTRON LIMITED
- Angelique Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL HARD MASK LAYERS FOR PROCESSING OF MICROELECTRONIC WORKPIECES
- Publication number 20190237331
- Publication date Aug 1, 2019
- TOKYO ELECTRON LIMITED
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHODS FOR MANDREL PULL FROM SPACERS FOR MULTI-COLOR...
- Publication number 20190189444
- Publication date Jun 20, 2019
- TOKYO ELECTRON LIMITED
- Xinghua Sun
- H01 - BASIC ELECTRIC ELEMENTS

Andrew Metz

Person

Patents Grantslast 30 patents

Contact openings in semiconductor devices

Methods for forming self-aligned contacts using spin-on silicon car...

Technologies for high aspect ratio carbon etching with inserted cha...

Forming contact holes with controlled local critical dimension unif...

Cyclic plasma processing

Non-atomic layer deposition (ALD) method of forming sidewall passiv...

Cyclic plasma etching of carbon-containing materials

Localized etch stop layer

Systems and methods to control critical dimension (CD) shrink ratio...

Methods for forming self-aligned contacts using spin-on silicon car...

Methods and systems for etching silicon cyanide (SiCN) with multi-c...

Non-atomic layer deposition (ALD) method of forming sidewall passiv...

Manufacturing methods for mandrel pull from spacers for multi-color...

High aspect ratio via etch using atomic layer deposition protection...

Metal hard mask layers for processing of microelectronic workpieces

Method utilizing using post etch pattern encapsulation

Method of anisotropically etching adjacent lines with multi-color s...

Method for reducing reactive ion etch lag in low K dielectric etching

Method of quasi atomic layer etching

Method for patterning a substrate using a layer with multiple mater...

Trench and hole patterning with EUV resists using dual frequency ca...

Trench and hole patterning with EUV resists using dual frequency ca...

Self-aligned patterning using directed self-assembly of block copol...

Method for increasing oxide etch selectivity

Method of forming self-aligned contacts using a replacement metal g...

Dry metal etching method

Selective etch process for silicon nitride

Method for high aspect ratio patterning in a spin-on layer

Patents Applicationslast 30 patents

Apparatus and Methods for Plasma Processing

IN-SITU FOCUS RING COATING

Plasma Etching with Metal Sputtering

High Aspect Ratio Contact (HARC) Etch

PLASMA ETCHING TOOLS AND SYSTEMS

Variable Hardness Amorphous Carbon Mask

Method For Improving Etch Rate And Critical Dimension Uniformity Wh...

TECHNOLOGIES FOR HIGH ASPECT RATIO CARBON ETCHING WITH INSERTED CHA...

PLASMA ETCH PROCESS FOR FABRICATING HIGH ASPECT RATIO (HAR) FEATURES

Methods for Forming Self-Aligned Contacts Using Spin-on Silicon Car...

CYCLIC PLASMA PROCESSING

SACRIFICIAL CAPPING LAYER FOR CONTACT ETCH

Cyclic Plasma Etching Of Carbon-Containing Materials

METHOD OF FORMING A FINFET STRUCTURE

SACRIFICIAL CAPPING LAYER FOR GATE PROTECTION

Methods for Forming Self-Aligned Contacts Using Spin-on Silicon Car...

Contact Etch Stop Layer with Improved Etch Stop Capability

Recessed Contact Structures and Methods

CONFORMAL AMORPHOUS CARBON LAYER ETCH WITH SIDE-WALL PASSIVATION

Non-Atomic Layer Deposition (ALD) Method of Forming Sidewall Passiv...

FORMING CONTACT HOLES WITH CONTROLLED LOCAL CRITICAL DIMENSION UNIF...

FORMING A SEMICONDUCTOR DEVICE USING A PROTECTIVE LAYER

Contact Openings in Semiconductor Devices

Systems and Methods to Control Critical Dimension (CD) Shrink Ratio...

LOCALIZED ETCH STOP LAYER

METHODS AND SYSTEMS FOR ETCHING SILICON CYANIDE (SICN) WITH MULTI-C...

METHOD OF ANISOTROPICALLY ETCHING ADJACENT LINES WITH MULTI-COLOR S...

Method Utilizing Using Post Etch Pattern Encapsulation

METAL HARD MASK LAYERS FOR PROCESSING OF MICROELECTRONIC WORKPIECES

MANUFACTURING METHODS FOR MANDREL PULL FROM SPACERS FOR MULTI-COLOR...