Andrew Ott

Person

Grayslake, IL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor having an etch stop layer including a metal compound tha...
- Patent number 8,399,317
- Issue date Mar 19, 2013
- Intel Corporation
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having an etch stop layer including a metal compound tha...
- Patent number 8,120,114
- Issue date Feb 21, 2012
- Intel Corporation
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of a dielectric on a self-assembled monolayer-...
- Patent number 7,790,631
- Issue date Sep 7, 2010
- Intel Corporation
- Ajay K. Sharma
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
Method of making semiconductor device using a novel interconnect cl...
- Patent number 7,214,594
- Issue date May 8, 2007
- Intel Corporation
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated low-k hard mask
- Patent number 7,199,473
- Issue date Apr 3, 2007
- Intel Corporation
- Sean W. King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a dielectric layer using porogens
- Patent number 7,169,715
- Issue date Jan 30, 2007
- Intel Corporation
- Andrew W. Ott
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Structure in a microelectronic device including a bi-layer for a di...
- Patent number 7,164,206
- Issue date Jan 16, 2007
- Intel Corporation
- Grant Kloster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a dielectric layer using a hydrocarbon-containing precursor
- Patent number 7,138,158
- Issue date Nov 21, 2006
- Intel Corporation
- Robert P. Meagley
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Enhancement of an interconnect
- Patent number 7,135,775
- Issue date Nov 14, 2006
- Intel Corporation
- Stephen T. Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-damascene interconnects without an etch stop layer by alternat...
- Patent number 6,992,391
- Issue date Jan 31, 2006
- Intel Corporation
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated low-k hard mask
- Patent number 6,974,772
- Issue date Dec 13, 2005
- Intel Corporation
- Sean W. King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adhesion between dielectric materials
- Patent number 6,713,873
- Issue date Mar 30, 2004
- Intel Corporation
- Jennifer O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating a processing chamber having multiple stations
- Patent number 6,645,877
- Issue date Nov 11, 2003
- Intel Corporation
- Andrew Ott
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Enhancement of an interconnect
- Patent number 6,518,184
- Issue date Feb 11, 2003
- Intel Corporation
- Stephen T. Chambers
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR HAVING AN ETCH STOP LAYER INCLUDING A METAL COMPOUND THA...
- Publication number 20120034773
- Publication date Feb 9, 2012
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having an etch stop layer including a metal compound tha...
- Publication number 20080157365
- Publication date Jul 3, 2008
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective deposition of a dielectric on a self-assembled monolayer-...
- Publication number 20080116481
- Publication date May 22, 2008
- Ajay K. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a dielectric layer using a hydrocarbon-containing precursor
- Publication number 20070032675
- Publication date Feb 8, 2007
- Robert P. Meagley
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED LOW-K HARD MASK
- Publication number 20060038296
- Publication date Feb 23, 2006
- Sean W. King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-damascene interconnects without an etch stop layer by alternat...
- Publication number 20050208753
- Publication date Sep 22, 2005
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adhesion between carbon doped oxide and etch stop layers
- Publication number 20050087517
- Publication date Apr 28, 2005
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a dielectric layer using porogens
- Publication number 20040185679
- Publication date Sep 23, 2004
- Andrew W. Ott
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Forming a dielectric layer using a hydrocarbon-containing precursor
- Publication number 20040170760
- Publication date Sep 2, 2004
- Robert P. Meagley
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of making semiconductor devices using carbon nitride, a low-...
- Publication number 20040119163
- Publication date Jun 24, 2004
- Lawrence Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adhesion between dielectric materials
- Publication number 20040101667
- Publication date May 27, 2004
- Jennifer O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making semiconductor device using a novel interconnect cl...
- Publication number 20030186535
- Publication date Oct 2, 2003
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a semiconductor device using a damascene interconn...
- Publication number 20030173651
- Publication date Sep 18, 2003
- Lawrence D. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of operating a processing chamber having multiple stations
- Publication number 20030143823
- Publication date Jul 31, 2003
- Andrew Ott
- C30 - CRYSTAL GROWTH
Information Patent Application
Enhancement of an interconnect
- Publication number 20030137050
- Publication date Jul 24, 2003
- Stephen T. Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-damascene interconnects without an etch stop layer by alternat...
- Publication number 20030064580
- Publication date Apr 3, 2003
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure in a microelectronic device including a bi-layer for a di...
- Publication number 20020140103
- Publication date Oct 3, 2002
- Grant Kloster
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistor having an etch stop layer including a metal compound tha...

Transistor having an etch stop layer including a metal compound tha...

Selective deposition of a dielectric on a self-assembled monolayer-...

Method of making semiconductor device using a novel interconnect cl...

Integrated low-k hard mask

Forming a dielectric layer using porogens

Structure in a microelectronic device including a bi-layer for a di...

Forming a dielectric layer using a hydrocarbon-containing precursor

Enhancement of an interconnect

Dual-damascene interconnects without an etch stop layer by alternat...

Integrated low-k hard mask

Adhesion between dielectric materials

Method of operating a processing chamber having multiple stations

Enhancement of an interconnect

Patents Applicationslast 30 patents

TRANSISTOR HAVING AN ETCH STOP LAYER INCLUDING A METAL COMPOUND THA...

Transistor having an etch stop layer including a metal compound tha...

Selective deposition of a dielectric on a self-assembled monolayer-...

Forming a dielectric layer using a hydrocarbon-containing precursor

INTEGRATED LOW-K HARD MASK

Dual-damascene interconnects without an etch stop layer by alternat...

Adhesion between carbon doped oxide and etch stop layers

Forming a dielectric layer using porogens

Forming a dielectric layer using a hydrocarbon-containing precursor

Method of making semiconductor devices using carbon nitride, a low-...

Adhesion between dielectric materials

Method of making semiconductor device using a novel interconnect cl...

Method of making a semiconductor device using a damascene interconn...

Method of operating a processing chamber having multiple stations

Enhancement of an interconnect

Dual-damascene interconnects without an etch stop layer by alternat...

Structure in a microelectronic device including a bi-layer for a di...