Anthony Gene Domenicucci

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a device using low temperature anneal process...
- Patent number 8,490,029
- Issue date Jul 16, 2013
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing dislocation formation in semiconductor devices through tar...
- Patent number 8,343,825
- Issue date Jan 1, 2013
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a device using low temperature anneal process...
- Patent number 8,236,709
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed low-defect SGOI for strained SI CMOS applications
- Patent number 8,227,792
- Issue date Jul 24, 2012
- International Business Machines Corporation
- Paul D. Agnello
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of silicide formation by adding graded amount of impurity du...
- Patent number 8,021,982
- Issue date Sep 20, 2011
- International Business Machines Corporation
- Oh-Jung Kwon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Structure and method to form a thermally stable silicide in narrow...
- Patent number 8,021,971
- Issue date Sep 20, 2011
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing stacking faults through annealing
- Patent number 7,956,417
- Issue date Jun 7, 2011
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable precision resistor and method of programming the same
- Patent number 7,881,093
- Issue date Feb 1, 2011
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoder for a stationary switch machine
- Patent number 7,820,501
- Issue date Oct 26, 2010
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect reduction by oxidation of silicon
- Patent number 7,816,664
- Issue date Oct 19, 2010
- International Business Machines Corporation
- Stephen W. Bedell
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
High performance strained silicon FinFETs device and method for for...
- Patent number 7,705,345
- Issue date Apr 27, 2010
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-quality SGOI by annealing near the alloy melting point
- Patent number 7,679,141
- Issue date Mar 16, 2010
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor heterostructure including a substantially relaxed, lo...
- Patent number 7,507,988
- Issue date Mar 24, 2009
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-quality SGOI by oxidation near the alloy melting temperature
- Patent number 7,473,587
- Issue date Jan 6, 2009
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin, high quality strained silicon-on-insulator formed by el...
- Patent number 7,442,993
- Issue date Oct 28, 2008
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed, low-defect SGOI for strained Si CMOS applications
- Patent number 7,358,166
- Issue date Apr 15, 2008
- International Business Machines Corporation
- Paul D. Agnello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-quality SGOI by annealing near the alloy melting point
- Patent number 7,348,253
- Issue date Mar 25, 2008
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transmission electron microscopy sample preparation method for elec...
- Patent number 7,214,935
- Issue date May 8, 2007
- International Business Machines Corporation
- Thomas A. Bauer
- G01 - MEASURING TESTING
Information Patent Grant
Method for enhanced uni-directional diffusion of metal and subseque...
- Patent number 7,208,414
- Issue date Apr 24, 2007
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect reduction by oxidation of silicon
- Patent number 7,169,226
- Issue date Jan 30, 2007
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for improving spatial resolution of electron holo...
- Patent number 7,102,145
- Issue date Sep 5, 2006
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-quality SGOI by oxidation near the alloy melting temperature
- Patent number 7,049,660
- Issue date May 23, 2006
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron holography method
- Patent number 7,015,469
- Issue date Mar 21, 2006
- Jeol USA, Inc.
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin, high quality strained silicon-on-insulator formed by el...
- Patent number 6,991,998
- Issue date Jan 31, 2006
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed, low-defect SGOI for strained Si CMOS applications
- Patent number 6,946,373
- Issue date Sep 20, 2005
- International Business Machines Corporation
- Paul D. Agnello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron microscope magnification standard providing precise calibr...
- Patent number 6,875,982
- Issue date Apr 5, 2005
- International Business Machines Corporation
- Stephen W. Bedell
- G01 - MEASURING TESTING
Information Patent Grant
Surface roughness improvement of SIMOX substrates by controlling or...
- Patent number 6,531,411
- Issue date Mar 11, 2003
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing a contact barrier
- Patent number 6,509,265
- Issue date Jan 21, 2003
- International Business Machines Corporation
- Patrick W. DeHaven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling internal thermal oxidation and eliminating deep divots...
- Patent number 6,495,429
- Issue date Dec 17, 2002
- International Business Machines Corporation
- Michael E. Adamcek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improved fabrication of salicide structures
- Patent number 6,475,893
- Issue date Nov 5, 2002
- International Business Machines Corporation
- Kenneth J. Giewont
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REDUCING DISLOCATION FORMATION IN SEMICONDUCTOR DEVICES THROUGH TAR...
- Publication number 20120184075
- Publication date Jul 19, 2012
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A DEVICE USING LOW TEMPERATURE ANNEAL PROCESS...
- Publication number 20120180010
- Publication date Jul 12, 2012
- International Business Machines Corporation
- Anthony G. DOMENICUCCI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFICATION OF NITRIDE TOP LAYER
- Publication number 20120027956
- Publication date Feb 2, 2012
- International Business Machines Corporation
- Daewon Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
STRUCTURE AND METHOD TO FORM A THERMALLY STABLE SILICIDE IN NARROW...
- Publication number 20110101472
- Publication date May 5, 2011
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SILICIDE FORMATION BY ADDING GRADED AMOUNT OF IMPURITY DU...
- Publication number 20110070732
- Publication date Mar 24, 2011
- International Business Machines Corporation
- Oh-Jung Kwon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of Fabricating a Device Using Low Temperature Anneal Process...
- Publication number 20110027956
- Publication date Feb 3, 2011
- International Business Machines Corporation
- Anthony G. DOMENICUCCI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING
- Publication number 20100283089
- Publication date Nov 11, 2010
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE PRECISION RESISTOR AND METHOD OF PROGRAMMING THE SAME
- Publication number 20100025819
- Publication date Feb 4, 2010
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT REDUCTION BY OXIDATION OF SILICON
- Publication number 20080246019
- Publication date Oct 9, 2008
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELAXED LOW-DEFECT SGOI FOR STRAINED Si CMOS APPLICATIONS
- Publication number 20080135875
- Publication date Jun 12, 2008
- International Business Machines Corporation
- Paul D. Agnello
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH-QUALITY SGOI BY ANNEALING NEAR THE ALLOY MELTING POINT
- Publication number 20080116483
- Publication date May 22, 2008
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING
- Publication number 20080087961
- Publication date Apr 17, 2008
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ENHANCED UNI-DIRECTIONAL DIFFUSION OF METAL AND SUBSEQUE...
- Publication number 20070128867
- Publication date Jun 7, 2007
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT REDUCTION BY OXIDATION OF SILICON
- Publication number 20070105350
- Publication date May 10, 2007
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and method for improving spatial resolution of electron holo...
- Publication number 20060097167
- Publication date May 11, 2006
- International Business Machines Corporation
- Anthony G. Domenicucci
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Ultra-thin, high quality strained silicon-on-insulator formed by el...
- Publication number 20060081837
- Publication date Apr 20, 2006
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSMISSION ELECTRON MICROSCOPY SAMPLE PREPARATION METHOD FOR ELEC...
- Publication number 20060065830
- Publication date Mar 30, 2006
- International Business Machines Corporation
- Thomas A. Bauer
- G01 - MEASURING TESTING
Information Patent Application
STRUCTURE AND METHOD FOR ENHANCED UNI-DIRECTIONAL DIFFUSION OF COBA...
- Publication number 20060057844
- Publication date Mar 16, 2006
- International Business Machines Corporation
- Anthony G. Domenicucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Relaxed, low-defect SGOI for strained Si CMOS applications
- Publication number 20060030133
- Publication date Feb 9, 2006
- International Business Machines Corporation
- Paul D. Agnello
- C30 - CRYSTAL GROWTH
Information Patent Application
ULTRA-THIN, HIGH QUALITY STRAINED SILICON-ON-INSULATOR FORMED BY EL...
- Publication number 20060001089
- Publication date Jan 5, 2006
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-quality SGOI by oxidation near the alloy melting temperature
- Publication number 20050208780
- Publication date Sep 22, 2005
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance strained silicon FinFETs device and method for for...
- Publication number 20050145941
- Publication date Jul 7, 2005
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AN ELECTRON MICROSCOPE MAGNIFICATION STANDARD PROVIDING PRECISE CAL...
- Publication number 20050045819
- Publication date Mar 3, 2005
- International Business Machines Corporation
- Stephen W. Bedell
- G01 - MEASURING TESTING
Information Patent Application
Defect reduction by oxidation of silicon
- Publication number 20050003229
- Publication date Jan 6, 2005
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-quality SGOI by annealing near the alloy melting point
- Publication number 20040259334
- Publication date Dec 23, 2004
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-quality SGOI by oxidation near the alloy melting temperature
- Publication number 20040238885
- Publication date Dec 2, 2004
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electron holography method
- Publication number 20040195506
- Publication date Oct 7, 2004
- IBM Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Relaxed, low-defect SGOI for strained Si CMOS applications
- Publication number 20040094763
- Publication date May 20, 2004
- International Business Machines Corporation
- Paul D. Agnello
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating different gate oxide thickness within the sa...
- Publication number 20030094660
- Publication date May 22, 2003
- Scott W. Crowder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing a flat interface for a metal-silicon contact b...
- Publication number 20020180046
- Publication date Dec 5, 2002
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS

Anthony Gene Domenicucci

Person

Patents Grantslast 30 patents

Method of fabricating a device using low temperature anneal process...

Reducing dislocation formation in semiconductor devices through tar...

Method of fabricating a device using low temperature anneal process...

Relaxed low-defect SGOI for strained SI CMOS applications

Method of silicide formation by adding graded amount of impurity du...

Structure and method to form a thermally stable silicide in narrow...

Method of reducing stacking faults through annealing

Programmable precision resistor and method of programming the same

Decoder for a stationary switch machine

Defect reduction by oxidation of silicon

High performance strained silicon FinFETs device and method for for...

High-quality SGOI by annealing near the alloy melting point

Semiconductor heterostructure including a substantially relaxed, lo...

High-quality SGOI by oxidation near the alloy melting temperature

Ultra-thin, high quality strained silicon-on-insulator formed by el...

Relaxed, low-defect SGOI for strained Si CMOS applications

High-quality SGOI by annealing near the alloy melting point

Transmission electron microscopy sample preparation method for elec...

Method for enhanced uni-directional diffusion of metal and subseque...

Defect reduction by oxidation of silicon

System and method for improving spatial resolution of electron holo...

High-quality SGOI by oxidation near the alloy melting temperature

Electron holography method

Ultra-thin, high quality strained silicon-on-insulator formed by el...

Relaxed, low-defect SGOI for strained Si CMOS applications

Electron microscope magnification standard providing precise calibr...

Surface roughness improvement of SIMOX substrates by controlling or...

Process for manufacturing a contact barrier

Controlling internal thermal oxidation and eliminating deep divots...

Method for improved fabrication of salicide structures

Patents Applicationslast 30 patents

REDUCING DISLOCATION FORMATION IN SEMICONDUCTOR DEVICES THROUGH TAR...

METHOD OF FABRICATING A DEVICE USING LOW TEMPERATURE ANNEAL PROCESS...

MODIFICATION OF NITRIDE TOP LAYER

STRUCTURE AND METHOD TO FORM A THERMALLY STABLE SILICIDE IN NARROW...

METHOD OF SILICIDE FORMATION BY ADDING GRADED AMOUNT OF IMPURITY DU...

Method of Fabricating a Device Using Low Temperature Anneal Process...

METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING

PROGRAMMABLE PRECISION RESISTOR AND METHOD OF PROGRAMMING THE SAME

DEFECT REDUCTION BY OXIDATION OF SILICON

RELAXED LOW-DEFECT SGOI FOR STRAINED Si CMOS APPLICATIONS

HIGH-QUALITY SGOI BY ANNEALING NEAR THE ALLOY MELTING POINT

METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING

METHOD FOR ENHANCED UNI-DIRECTIONAL DIFFUSION OF METAL AND SUBSEQUE...

DEFECT REDUCTION BY OXIDATION OF SILICON

System and method for improving spatial resolution of electron holo...

Ultra-thin, high quality strained silicon-on-insulator formed by el...

TRANSMISSION ELECTRON MICROSCOPY SAMPLE PREPARATION METHOD FOR ELEC...

STRUCTURE AND METHOD FOR ENHANCED UNI-DIRECTIONAL DIFFUSION OF COBA...

Relaxed, low-defect SGOI for strained Si CMOS applications

ULTRA-THIN, HIGH QUALITY STRAINED SILICON-ON-INSULATOR FORMED BY EL...

High-quality SGOI by oxidation near the alloy melting temperature

High performance strained silicon FinFETs device and method for for...

AN ELECTRON MICROSCOPE MAGNIFICATION STANDARD PROVIDING PRECISE CAL...

Defect reduction by oxidation of silicon

High-quality SGOI by annealing near the alloy melting point

High-quality SGOI by oxidation near the alloy melting temperature

Electron holography method

Relaxed, low-defect SGOI for strained Si CMOS applications

Method for fabricating different gate oxide thickness within the sa...

Method for producing a flat interface for a metal-silicon contact b...