Anthony I-Chih Chou

Person

Beacon, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Heat pipe for vertically stacked field effect transistors
- Patent number 12,040,250
- Issue date Jul 16, 2024
- International Business Machines Corporation
- Terence Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated logic, electrostatic discharge, and well contact devi...
- Patent number 11,894,361
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 11,101,357
- Issue date Aug 24, 2021
- Tessera, Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 10,734,492
- Issue date Aug 4, 2020
- Tessera, Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with integrated passive structures
- Patent number 10,580,686
- Issue date Mar 3, 2020
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 10,381,452
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 10,374,048
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 10,367,072
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making FinFET device comprising a piezoelectric liner fo...
- Patent number 10,256,152
- Issue date Apr 9, 2019
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with integrated passive structures
- Patent number 10,242,906
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric semiconductor device and method of forming same
- Patent number 10,049,942
- Issue date Aug 14, 2018
- GLOBALFOUNDRIES Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with integrated passive structures
- Patent number 10,032,862
- Issue date Jul 24, 2018
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip resistors with a tunable temperature coefficient of resistance
- Patent number 10,014,364
- Issue date Jul 3, 2018
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction butting structure using nonuniform trench shape
- Patent number 9,923,082
- Issue date Mar 20, 2018
- Global Foundries Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,922,831
- Issue date Mar 20, 2018
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,859,122
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent number 9,837,319
- Issue date Dec 5, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with integrated passive structures
- Patent number 9,768,195
- Issue date Sep 19, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent number 9,768,071
- Issue date Sep 19, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,721,843
- Issue date Aug 1, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and control systems of resistance adjustment of resistors
- Patent number 9,703,301
- Issue date Jul 11, 2017
- International Business Machines Corporation
- Anthony I. Chou
- G05 - CONTROLLING REGULATING
Information Patent Grant
Semiconductor structure with integrated passive structures
- Patent number 9,698,159
- Issue date Jul 4, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,685,379
- Issue date Jun 20, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with integrated passive structures
- Patent number 9,659,961
- Issue date May 23, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction butting structure using nonuniform trench shape
- Patent number 9,627,480
- Issue date Apr 18, 2017
- GLOBALFOUNDRIES Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type metal-semiconductor resistors and fabrication methods thereof
- Patent number 9,595,518
- Issue date Mar 14, 2017
- GLOBALFOUNDRIES Inc.
- Anthony I-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent number 9,577,061
- Issue date Feb 21, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent number 9,570,354
- Issue date Feb 14, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,559,010
- Issue date Jan 31, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,543,213
- Issue date Jan 10, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED FET VERTICAL DIODE
- Publication number 20240379658
- Publication date Nov 14, 2024
- International Business Machines Corporation
- Terence Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DEVICES CONTAINING AT LEAST ONE LATERAL DIODE
- Publication number 20240379657
- Publication date Nov 14, 2024
- International Business Machines Corporation
- Terence Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE USING BACKSIDE POWER DISTRIBUTION NETWORK
- Publication number 20240363617
- Publication date Oct 31, 2024
- International Business Machines Corporation
- Terence Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEE...
- Publication number 20240290860
- Publication date Aug 29, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH...
- Publication number 20240105769
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of Nanosheets with Bottom Dielectric Isolation and Idea...
- Publication number 20240072041
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF GATE-ALL-AROUND NANOSHEET LOGIC DEVICE AND PRECIS...
- Publication number 20240006467
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT PIPE FOR VERTICALLY STACKED FIELD EFFECT TRANSISTORS
- Publication number 20230411241
- Publication date Dec 21, 2023
- INTERNATIONAL BUSINESS MACHINES CORPORATION
- Terence Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF FORMING CONTACTS AND GATES FOR STAGGERED FET
- Publication number 20230411386
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR A LOGIC DEVICE AND ANOTHER DEVICE
- Publication number 20230378258
- Publication date Nov 23, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD-EFFECT TRANSISTORS HAVING LATCH CROSS-COUPLING CONNEC...
- Publication number 20230335585
- Publication date Oct 19, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVI...
- Publication number 20230178539
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20200365702
- Publication date Nov 19, 2020
- Tessera, Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
- Publication number 20200027779
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICK GATE OXIDE FET INTEGRATED WITH FDSOI WITHOUT ADDITIONAL THICK...
- Publication number 20190386130
- Publication date Dec 19, 2019
- International Business Machines Corporation
- Anthony I-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20190296120
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
- Publication number 20190181037
- Publication date Jun 13, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE COMPRISING A PIEZOELECTRIC LINER FOR GENERATING A SUR...
- Publication number 20190027601
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES INC.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
- Publication number 20180277424
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20180076039
- Publication date Mar 15, 2018
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20180061645
- Publication date Mar 1, 2018
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20180061646
- Publication date Mar 1, 2018
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
- Publication number 20170338145
- Publication date Nov 23, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
- Publication number 20170236898
- Publication date Aug 17, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND CONTROL SYSTEMS OF RESISTANCE ADJUSTMENT OF RESISTORS
- Publication number 20170199532
- Publication date Jul 13, 2017
- International Business Machines Corporation
- Anthony I. Chou
- G01 - MEASURING TESTING
Information Patent Application
JUNCTION BUTTING STRUCTURE USING NONUNIFORM TRENCH SHAPE
- Publication number 20170179257
- Publication date Jun 22, 2017
- GLOBALFOUNDRIES Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20170178913
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICK GATE OXIDE FET INTEGRATED WITH FDSOI WITHOUT ADDITIONAL THICK...
- Publication number 20170170265
- Publication date Jun 15, 2017
- International Business Machines Corporation
- Anthony I-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20170125542
- Publication date May 4, 2017
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20170076991
- Publication date Mar 16, 2017
- GLOBALFOUNDRIES INC.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS

Anthony I-Chih Chou

Person

Patents Grantslast 30 patents

Heat pipe for vertically stacked field effect transistors

Co-integrated logic, electrostatic discharge, and well contact devi...

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Semiconductor structure with integrated passive structures

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Methods of making FinFET device comprising a piezoelectric liner fo...

Semiconductor structure with integrated passive structures

Asymmetric semiconductor device and method of forming same

Semiconductor structure with integrated passive structures

On-chip resistors with a tunable temperature coefficient of resistance

Junction butting structure using nonuniform trench shape

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-K dielectric for reducing gate induced drain leakage

Semiconductor structure with integrated passive structures

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Methods and control systems of resistance adjustment of resistors

Semiconductor structure with integrated passive structures

Asymmetric high-k dielectric for reducing gate induced drain leakage

Semiconductor structure with integrated passive structures

Junction butting structure using nonuniform trench shape

Fin-type metal-semiconductor resistors and fabrication methods thereof

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Patents Applicationslast 30 patents

STACKED FET VERTICAL DIODE

STACKED DEVICES CONTAINING AT LEAST ONE LATERAL DIODE

ELECTROSTATIC DISCHARGE USING BACKSIDE POWER DISTRIBUTION NETWORK

SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEE...

STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH...

Integration of Nanosheets with Bottom Dielectric Isolation and Idea...

CO-INTEGRATION OF GATE-ALL-AROUND NANOSHEET LOGIC DEVICE AND PRECIS...

HEAT PIPE FOR VERTICALLY STACKED FIELD EFFECT TRANSISTORS

METHOD AND STRUCTURE OF FORMING CONTACTS AND GATES FOR STAGGERED FET

METHOD AND STRUCTURE FOR A LOGIC DEVICE AND ANOTHER DEVICE

STACKED FIELD-EFFECT TRANSISTORS HAVING LATCH CROSS-COUPLING CONNEC...

CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVI...

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

THICK GATE OXIDE FET INTEGRATED WITH FDSOI WITHOUT ADDITIONAL THICK...

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

FINFET DEVICE COMPRISING A PIEZOELECTRIC LINER FOR GENERATING A SUR...

SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

METHODS AND CONTROL SYSTEMS OF RESISTANCE ADJUSTMENT OF RESISTORS

JUNCTION BUTTING STRUCTURE USING NONUNIFORM TRENCH SHAPE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

THICK GATE OXIDE FET INTEGRATED WITH FDSOI WITHOUT ADDITIONAL THICK...

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME