ANTON VADIMOVICH TOKRANOV

Person

Cohoes, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
IC product comprising a single active fin FinFET device and an elec...
- Patent number 11,276,651
- Issue date Mar 15, 2022
- GLOBALFOUNDRIES U.S. INC.
- Anton Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure with single active region having different doping prof...
- Patent number 11,205,648
- Issue date Dec 21, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM bit cells formed with dummy structures
- Patent number 11,037,937
- Issue date Jun 15, 2021
- GLOBALFOUNDRIES U.S. INC.
- Meixiong Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...
- Publication number 20250040237
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vitor A. Vulcano Rossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD...
- Publication number 20240429237
- Publication date Dec 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton TOKRANOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ISOLATION REGION INCLUDING COMBINATION...
- Publication number 20240313113
- Publication date Sep 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS
- Publication number 20240234425
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Tamilmani ETHIRAJAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING FIELD EFFECT TRANSISTOR WITH SCAL...
- Publication number 20240047555
- Publication date Feb 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE HAVING DIFFERENT GATE DIELECTRIC WIDTHS IN DIFFERENT REGI...
- Publication number 20230326924
- Publication date Oct 12, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC PRODUCT COMPRISING A SINGLE ACTIVE FIN FINFET DEVICE AND AN ELEC...
- Publication number 20210358865
- Publication date Nov 18, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Anton Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE WITH SINGLE ACTIVE REGION HAVING DIFFERENT DOPING PROF...
- Publication number 20210351283
- Publication date Nov 11, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM BIT CELLS FORMED WITH DUMMY STRUCTURES
- Publication number 20210151443
- Publication date May 20, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Meixiong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRUCTURES OF FINFET DEVICES
- Publication number 20210091222
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- TAO CHU
- H01 - BASIC ELECTRIC ELEMENTS

ANTON VADIMOVICH TOKRANOV

Person

Patents Grantslast 30 patents

IC product comprising a single active fin FinFET device and an elec...

IC structure with single active region having different doping prof...

SRAM bit cells formed with dummy structures

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT WITH FINFET WITH SHORTER AND NARROWER FIN UNDER...

SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD...

SEMICONDUCTOR STRUCTURE WITH ISOLATION REGION INCLUDING COMBINATION...

DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS

SEMICONDUCTOR STRUCTURE INCLUDING FIELD EFFECT TRANSISTOR WITH SCAL...

STRUCTURE HAVING DIFFERENT GATE DIELECTRIC WIDTHS IN DIFFERENT REGI...

IC PRODUCT COMPRISING A SINGLE ACTIVE FIN FINFET DEVICE AND AN ELEC...

IC STRUCTURE WITH SINGLE ACTIVE REGION HAVING DIFFERENT DOPING PROF...

SRAM BIT CELLS FORMED WITH DUMMY STRUCTURES

FIN STRUCTURES OF FINFET DEVICES